KR20010024117A - 디자인 룰 체킹 시스템 및 방법 - Google Patents
디자인 룰 체킹 시스템 및 방법 Download PDFInfo
- Publication number
- KR20010024117A KR20010024117A KR1020007002873A KR20007002873A KR20010024117A KR 20010024117 A KR20010024117 A KR 20010024117A KR 1020007002873 A KR1020007002873 A KR 1020007002873A KR 20007002873 A KR20007002873 A KR 20007002873A KR 20010024117 A KR20010024117 A KR 20010024117A
- Authority
- KR
- South Korea
- Prior art keywords
- design
- calibrated
- data
- image
- calibration
- Prior art date
Links
- 238000013461 design Methods 0.000 title claims abstract description 250
- 238000000034 method Methods 0.000 title claims abstract description 116
- 230000008569 process Effects 0.000 claims abstract description 46
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 238000004088 simulation Methods 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 78
- 238000012937 correction Methods 0.000 description 36
- 230000000694 effects Effects 0.000 description 19
- 238000007689 inspection Methods 0.000 description 19
- 238000012795 verification Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 14
- 238000004422 calculation algorithm Methods 0.000 description 13
- 238000000206 photolithography Methods 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 230000006870 function Effects 0.000 description 11
- 241000251131 Sphyrna Species 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 238000011960 computer-aided design Methods 0.000 description 3
- 238000013500 data storage Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- JLQUFIHWVLZVTJ-UHFFFAOYSA-N carbosulfan Chemical compound CCCCN(CCCC)SN(C)C(=O)OC1=CC=CC2=C1OC(C)(C)C2 JLQUFIHWVLZVTJ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000571940 Dracula Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002730 additional effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000013523 data management Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5930697P | 1997-09-17 | 1997-09-17 | |
| US08/931,921 | 1997-09-17 | ||
| US08/931,921 US5858580A (en) | 1997-09-17 | 1997-09-17 | Phase shifting circuit manufacture method and apparatus |
| US6954997P | 1997-12-12 | 1997-12-12 | |
| US60/069,549 | 1997-12-12 | ||
| US09/130,996 | 1998-08-07 | ||
| US60/059,306 | 1998-08-07 | ||
| US09/130,996 US6757645B2 (en) | 1997-09-17 | 1998-08-07 | Visual inspection and verification system |
| US09/153,783 US6470489B1 (en) | 1997-09-17 | 1998-09-16 | Design rule checking system and method |
| US09/153,783 | 1998-09-16 | ||
| US09/154,397 | 1998-09-16 | ||
| US09/154,397 US6453452B1 (en) | 1997-12-12 | 1998-09-16 | Method and apparatus for data hierarchy maintenance in a system for mask description |
| PCT/US1998/019510 WO1999014638A1 (en) | 1997-09-17 | 1998-09-17 | Design rule checking system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010024117A true KR20010024117A (ko) | 2001-03-26 |
Family
ID=27556793
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020007002869A KR20010024113A (ko) | 1997-09-17 | 1998-09-17 | 마스크 묘사 시스템에서 데이터 계층 유지보수를 위한방법 및 장치 |
| KR1020007002873A KR20010024117A (ko) | 1997-09-17 | 1998-09-17 | 디자인 룰 체킹 시스템 및 방법 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020007002869A KR20010024113A (ko) | 1997-09-17 | 1998-09-17 | 마스크 묘사 시스템에서 데이터 계층 유지보수를 위한방법 및 장치 |
Country Status (5)
| Country | Link |
|---|---|
| EP (2) | EP1023641A4 (ja) |
| JP (2) | JP4624550B2 (ja) |
| KR (2) | KR20010024113A (ja) |
| AU (3) | AU9396198A (ja) |
| WO (1) | WO1999014638A1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100494964B1 (ko) * | 2002-01-08 | 2005-06-14 | 미쓰비시덴키 가부시키가이샤 | 반도체 디바이스의 레이아웃 패턴을 시뮬레이션하는리소그래피 프로세스 마진 평가 장치 |
| KR100649969B1 (ko) * | 2000-12-26 | 2006-11-27 | 주식회사 하이닉스반도체 | 마스크 제작방법 |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6453452B1 (en) | 1997-12-12 | 2002-09-17 | Numerical Technologies, Inc. | Method and apparatus for data hierarchy maintenance in a system for mask description |
| US6425113B1 (en) | 2000-06-13 | 2002-07-23 | Leigh C. Anderson | Integrated verification and manufacturability tool |
| US7412676B2 (en) | 2000-06-13 | 2008-08-12 | Nicolas B Cobb | Integrated OPC verification tool |
| EP1330742B1 (en) * | 2000-06-13 | 2015-03-25 | Mentor Graphics Corporation | Integrated verification and manufacturability tool |
| US6978436B2 (en) | 2000-07-05 | 2005-12-20 | Synopsys, Inc. | Design data format and hierarchy management for phase processing |
| US6430737B1 (en) | 2000-07-10 | 2002-08-06 | Mentor Graphics Corp. | Convergence technique for model-based optical and process correction |
| JP2002122977A (ja) * | 2000-10-17 | 2002-04-26 | Sony Corp | フォトマスクの作成法、フォトマスク、並びに露光方法 |
| US6395438B1 (en) | 2001-01-08 | 2002-05-28 | International Business Machines Corporation | Method of etch bias proximity correction |
| US6505327B2 (en) | 2001-04-13 | 2003-01-07 | Numerical Technologies, Inc. | Generating an instance-based representation of a design hierarchy |
| JP3572053B2 (ja) * | 2001-05-31 | 2004-09-29 | 株式会社東芝 | 露光マスクの製造方法、マスク基板情報生成方法、半導体装置の製造方法およびサーバー |
| US6560766B2 (en) | 2001-07-26 | 2003-05-06 | Numerical Technologies, Inc. | Method and apparatus for analyzing a layout using an instance-based representation |
| US6721928B2 (en) | 2001-07-26 | 2004-04-13 | Numerical Technologies, Inc. | Verification utilizing instance-based hierarchy management |
| US6735752B2 (en) | 2001-09-10 | 2004-05-11 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process features created by interactions between cells |
| US6738958B2 (en) | 2001-09-10 | 2004-05-18 | Numerical Technologies, Inc. | Modifying a hierarchical representation of a circuit to process composite gates |
| US6880135B2 (en) | 2001-11-07 | 2005-04-12 | Synopsys, Inc. | Method of incorporating lens aberration information into various process flows |
| US7085698B2 (en) | 2001-12-18 | 2006-08-01 | Synopsys, Inc. | Method for providing flexible and dynamic reporting capability using simulation tools |
| US7159197B2 (en) | 2001-12-31 | 2007-01-02 | Synopsys, Inc. | Shape-based geometry engine to perform smoothing and other layout beautification operations |
| US7293249B2 (en) | 2002-01-31 | 2007-11-06 | Juan Andres Torres Robles | Contrast based resolution enhancement for photolithographic processing |
| US7386433B2 (en) | 2002-03-15 | 2008-06-10 | Synopsys, Inc. | Using a suggested solution to speed up a process for simulating and correcting an integrated circuit layout |
| US6944844B2 (en) | 2002-04-03 | 2005-09-13 | Synopsys, Inc. | System and method to determine impact of line end shortening |
| US6931613B2 (en) | 2002-06-24 | 2005-08-16 | Thomas H. Kauth | Hierarchical feature extraction for electrical interaction calculations |
| US6687895B2 (en) | 2002-07-03 | 2004-02-03 | Numerical Technologies Inc. | Method and apparatus for reducing optical proximity correction output file size |
| US7069534B2 (en) | 2003-12-17 | 2006-06-27 | Sahouria Emile Y | Mask creation with hierarchy management using cover cells |
| US7861207B2 (en) | 2004-02-25 | 2010-12-28 | Mentor Graphics Corporation | Fragmentation point and simulation site adjustment for resolution enhancement techniques |
| US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
| EP1747520B1 (en) * | 2004-05-07 | 2018-10-24 | Mentor Graphics Corporation | Integrated circuit layout design methodology with process variation bands |
| US7240305B2 (en) | 2004-06-02 | 2007-07-03 | Lippincott George P | OPC conflict identification and edge priority system |
| JP4266189B2 (ja) | 2004-07-09 | 2009-05-20 | 株式会社東芝 | 半導体集積回路パターンの検証方法、フォトマスクの作成方法、半導体集積回路装置の製造方法、及び半導体集積回路パターンの検証方法を実現するためのプログラム |
| JP4904034B2 (ja) * | 2004-09-14 | 2012-03-28 | ケーエルエー−テンカー コーポレイション | レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体 |
| US7617473B2 (en) * | 2005-01-21 | 2009-11-10 | International Business Machines Corporation | Differential alternating phase shift mask optimization |
| US7506285B2 (en) | 2006-02-17 | 2009-03-17 | Mohamed Al-Imam | Multi-dimensional analysis for predicting RET model accuracy |
| US7739650B2 (en) | 2007-02-09 | 2010-06-15 | Juan Andres Torres Robles | Pre-bias optical proximity correction |
| CN101720474A (zh) | 2007-05-23 | 2010-06-02 | Nxp股份有限公司 | 工艺窗发觉检测以及掩模层处光刻印刷问题的校正 |
| US7805699B2 (en) | 2007-10-11 | 2010-09-28 | Mentor Graphics Corporation | Shape-based photolithographic model calibration |
| JP5100405B2 (ja) * | 2008-01-16 | 2012-12-19 | 株式会社東芝 | データベースの作成方法およびデータベース装置 |
| US7975244B2 (en) | 2008-01-24 | 2011-07-05 | International Business Machines Corporation | Methodology and system for determining numerical errors in pixel-based imaging simulation in designing lithographic masks |
| US10008422B2 (en) * | 2015-08-17 | 2018-06-26 | Qoniac Gmbh | Method for assessing the usability of an exposed and developed semiconductor wafer |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0608657A1 (en) * | 1993-01-29 | 1994-08-03 | International Business Machines Corporation | Apparatus and method for preparing shape data for proximity correction |
| KR0163471B1 (ko) * | 1994-07-05 | 1998-12-15 | 가네꼬 히사시 | 수정된 조명에 이용되는 포토-마스크 제조 방법, 포토-마스크를 이용하는 투영 정렬기 및 포토-마스크로부터 감광층으로 패턴상을 전사하는 방법 |
| JPH08297692A (ja) * | 1994-09-16 | 1996-11-12 | Mitsubishi Electric Corp | 光近接補正装置及び方法並びにパタン形成方法 |
| US5682323A (en) * | 1995-03-06 | 1997-10-28 | Lsi Logic Corporation | System and method for performing optical proximity correction on macrocell libraries |
| JP3409493B2 (ja) * | 1995-03-13 | 2003-05-26 | ソニー株式会社 | マスクパターンの補正方法および補正装置 |
| US5553273A (en) * | 1995-04-17 | 1996-09-03 | International Business Machines Corporation | Vertex minimization in a smart optical proximity correction system |
| JP2917879B2 (ja) * | 1995-10-31 | 1999-07-12 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| US5705301A (en) * | 1996-02-27 | 1998-01-06 | Lsi Logic Corporation | Performing optical proximity correction with the aid of design rule checkers |
| US5801954A (en) * | 1996-04-24 | 1998-09-01 | Micron Technology, Inc. | Process for designing and checking a mask layout |
| US5707765A (en) * | 1996-05-28 | 1998-01-13 | Microunity Systems Engineering, Inc. | Photolithography mask using serifs and method thereof |
| DE19818440C2 (de) * | 1998-04-24 | 2002-10-24 | Pdf Solutions Gmbh | Verfahren zur Erzeugung von Daten für die Herstellung einer durch Entwurfsdaten definierten Struktur |
-
1998
- 1998-09-17 AU AU93961/98A patent/AU9396198A/en not_active Abandoned
- 1998-09-17 WO PCT/US1998/019510 patent/WO1999014638A1/en not_active Application Discontinuation
- 1998-09-17 KR KR1020007002869A patent/KR20010024113A/ko not_active Application Discontinuation
- 1998-09-17 EP EP98951922A patent/EP1023641A4/en not_active Withdrawn
- 1998-09-17 KR KR1020007002873A patent/KR20010024117A/ko not_active Application Discontinuation
- 1998-09-17 JP JP2000512110A patent/JP4624550B2/ja not_active Expired - Lifetime
- 1998-09-17 EP EP98947103A patent/EP1023639A4/en not_active Withdrawn
- 1998-09-17 AU AU93960/98A patent/AU9396098A/en not_active Abandoned
- 1998-09-17 AU AU97751/98A patent/AU9775198A/en not_active Abandoned
- 1998-09-17 JP JP2000512112A patent/JP2003526110A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100649969B1 (ko) * | 2000-12-26 | 2006-11-27 | 주식회사 하이닉스반도체 | 마스크 제작방법 |
| KR100494964B1 (ko) * | 2002-01-08 | 2005-06-14 | 미쓰비시덴키 가부시키가이샤 | 반도체 디바이스의 레이아웃 패턴을 시뮬레이션하는리소그래피 프로세스 마진 평가 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4624550B2 (ja) | 2011-02-02 |
| AU9775198A (en) | 1999-04-05 |
| JP2003523545A (ja) | 2003-08-05 |
| EP1023641A1 (en) | 2000-08-02 |
| EP1023639A1 (en) | 2000-08-02 |
| AU9396198A (en) | 1999-04-05 |
| EP1023639A4 (en) | 2009-04-29 |
| JP2003526110A (ja) | 2003-09-02 |
| KR20010024113A (ko) | 2001-03-26 |
| WO1999014638A1 (en) | 1999-03-25 |
| AU9396098A (en) | 1999-04-05 |
| EP1023641A4 (en) | 2009-04-22 |
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