KR20000067881A - 진공 장치용 강체 박막 윈도우 - Google Patents
진공 장치용 강체 박막 윈도우 Download PDFInfo
- Publication number
- KR20000067881A KR20000067881A KR1019997000318A KR19997000318A KR20000067881A KR 20000067881 A KR20000067881 A KR 20000067881A KR 1019997000318 A KR1019997000318 A KR 1019997000318A KR 19997000318 A KR19997000318 A KR 19997000318A KR 20000067881 A KR20000067881 A KR 20000067881A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- window
- etch stop
- wafer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 123
- 239000010703 silicon Substances 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims abstract description 73
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 37
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 37
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 230000001681 protective effect Effects 0.000 claims abstract description 18
- 238000000206 photolithography Methods 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 125
- 238000005530 etching Methods 0.000 claims description 47
- 230000008569 process Effects 0.000 claims description 45
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 40
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 33
- 229910052796 boron Inorganic materials 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 238000009792 diffusion process Methods 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 17
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000011574 phosphorus Substances 0.000 claims description 7
- 150000001247 metal acetylides Chemical class 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- -1 Si 3 N 4 Chemical compound 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 27
- 238000004519 manufacturing process Methods 0.000 abstract description 23
- 239000010409 thin film Substances 0.000 abstract description 8
- 238000010894 electron beam technology Methods 0.000 abstract description 6
- 238000003631 wet chemical etching Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 108
- 239000010410 layer Substances 0.000 description 73
- 229920002120 photoresistant polymer Polymers 0.000 description 57
- 239000000243 solution Substances 0.000 description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000013078 crystal Substances 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 229960002050 hydrofluoric acid Drugs 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 5
- 230000006837 decompression Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 4
- 239000007853 buffer solution Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910008423 Si—B Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000002318 adhesion promoter Substances 0.000 description 2
- 238000000347 anisotropic wet etching Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CUMDVWOXTYANBS-UHFFFAOYSA-I [OH-].[K+].[Si+4].[OH-].[OH-].[OH-].[OH-] Chemical compound [OH-].[K+].[Si+4].[OH-].[OH-].[OH-].[OH-] CUMDVWOXTYANBS-UHFFFAOYSA-I 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 235000015250 liver sausages Nutrition 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 201000010041 presbyopia Diseases 0.000 description 1
- 238000013061 process characterization study Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002352 surface water Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
- B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
- B44C1/22—Removing surface-material, e.g. by engraving, by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J33/00—Discharge tubes with provision for emergence of electrons or ions from the vessel; Lenard tubes
- H01J33/02—Details
- H01J33/04—Windows
Landscapes
- Weting (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/684,166 US6002202A (en) | 1996-07-19 | 1996-07-19 | Rigid thin windows for vacuum applications |
| US8/684,166 | 1996-07-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20000067881A true KR20000067881A (ko) | 2000-11-25 |
Family
ID=24746944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019997000318A Withdrawn KR20000067881A (ko) | 1996-07-19 | 1997-07-18 | 진공 장치용 강체 박막 윈도우 |
Country Status (7)
Families Citing this family (56)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6074960A (en) * | 1997-08-20 | 2000-06-13 | Micron Technology, Inc. | Method and composition for selectively etching against cobalt silicide |
| US6284633B1 (en) * | 1997-11-24 | 2001-09-04 | Motorola Inc. | Method for forming a tensile plasma enhanced nitride capping layer over a gate electrode |
| US6204142B1 (en) | 1998-08-24 | 2001-03-20 | Micron Technology, Inc. | Methods to form electronic devices |
| US6528364B1 (en) * | 1998-08-24 | 2003-03-04 | Micron Technology, Inc. | Methods to form electronic devices and methods to form a material over a semiconductive substrate |
| US6107202A (en) * | 1998-09-14 | 2000-08-22 | Taiwan Semiconductor Manufacturing Company | Passivation photoresist stripping method to eliminate photoresist extrusion after alloy |
| US6345497B1 (en) | 2000-03-02 | 2002-02-12 | The Regents Of The University Of California | NOx reduction by electron beam-produced nitrogen atom injection |
| DE10010583A1 (de) * | 2000-03-03 | 2001-09-06 | Atmel Germany Gmbh | Verfahren zur Strukturierung und Reinigung von silizidierten Siliziumscheiben |
| US6815736B2 (en) | 2001-02-09 | 2004-11-09 | Midwest Research Institute | Isoelectronic co-doping |
| US6896850B2 (en) | 2001-03-26 | 2005-05-24 | Kumetrix, Inc. | Silicon nitride window for microsampling device and method of construction |
| JP4401691B2 (ja) * | 2003-06-13 | 2010-01-20 | 株式会社オクテック | 電子ビーム照射管の電子ビーム透過窓の製造方法 |
| JP2005003564A (ja) * | 2003-06-13 | 2005-01-06 | Ushio Inc | 電子ビーム管および電子ビーム取り出し用窓 |
| US6803570B1 (en) * | 2003-07-11 | 2004-10-12 | Charles E. Bryson, III | Electron transmissive window usable with high pressure electron spectrometry |
| US20050268567A1 (en) * | 2003-07-31 | 2005-12-08 | Mattson Technology, Inc. | Wedge-shaped window for providing a pressure differential |
| US7145988B2 (en) * | 2003-12-03 | 2006-12-05 | General Electric Company | Sealed electron beam source |
| US7030619B2 (en) * | 2004-02-19 | 2006-04-18 | Brooks Automation, Inc. | Ionization gauge |
| US7295015B2 (en) * | 2004-02-19 | 2007-11-13 | Brooks Automation, Inc. | Ionization gauge |
| US20060144778A1 (en) * | 2004-07-29 | 2006-07-06 | Grunthaner Frank J | Low stress, ultra-thin, uniform membrane, methods of fabricating same and incorporation into detection devices |
| DE102004039197B4 (de) | 2004-08-12 | 2010-06-17 | Siltronic Ag | Verfahren zur Herstellung von dotierten Halbleiterscheiben aus Silizium |
| US7197116B2 (en) * | 2004-11-16 | 2007-03-27 | General Electric Company | Wide scanning x-ray source |
| WO2009035727A2 (en) * | 2007-05-18 | 2009-03-19 | State Of Oregon Acting By And Through The State Board Of Higher Educ.On Behalf Of The Univ.Of Oregon | Tem grids for determination of structure-property relationships in nanotechnology |
| US20080280099A1 (en) * | 2005-05-23 | 2008-11-13 | Hutchison James E | Silicon Substrates with Thermal Oxide Windows for Transmission Electron Microscopy |
| US7432177B2 (en) * | 2005-06-15 | 2008-10-07 | Applied Materials, Inc. | Post-ion implant cleaning for silicon on insulator substrate preparation |
| EP1775752A3 (de) * | 2005-10-15 | 2007-06-13 | Burth, Dirk, Dr. | Herstellung eines Elektronenaustrittsfensters mittels eines Ätzprozesses |
| US7737424B2 (en) | 2007-06-01 | 2010-06-15 | Moxtek, Inc. | X-ray window with grid structure |
| US7709820B2 (en) * | 2007-06-01 | 2010-05-04 | Moxtek, Inc. | Radiation window with coated silicon support structure |
| JP5037241B2 (ja) * | 2007-07-04 | 2012-09-26 | スパンション エルエルシー | 半導体装置の製造方法及び半導体装置の製造装置 |
| DE102007031549B4 (de) * | 2007-07-06 | 2021-07-08 | Robert Bosch Gmbh | Vorrichtung aus einkristallinem Silizium und Verfahren zur Herstellung einer Vorrichtung aus einkristallinem Silizium |
| US7768267B2 (en) * | 2007-07-11 | 2010-08-03 | Brooks Automation, Inc. | Ionization gauge with a cold electron source |
| US8498381B2 (en) | 2010-10-07 | 2013-07-30 | Moxtek, Inc. | Polymer layer on X-ray window |
| US9305735B2 (en) | 2007-09-28 | 2016-04-05 | Brigham Young University | Reinforced polymer x-ray window |
| US8736138B2 (en) | 2007-09-28 | 2014-05-27 | Brigham Young University | Carbon nanotube MEMS assembly |
| US8247971B1 (en) | 2009-03-19 | 2012-08-21 | Moxtek, Inc. | Resistively heated small planar filament |
| US7983394B2 (en) | 2009-12-17 | 2011-07-19 | Moxtek, Inc. | Multiple wavelength X-ray source |
| CA2813812C (en) | 2010-03-08 | 2016-08-23 | Alliance For Sustainable Energy, Llc | Boron, bismuth co-doping of gallium arsenide and other compounds for photonic and heterojunction bipolar transistor devices |
| FI20105626A0 (fi) * | 2010-06-03 | 2010-06-03 | Hs Foils Oy | Erittäin ohut berylliumikkuna ja menetelmä sen valmistamiseksi |
| DE102010046100A1 (de) * | 2010-09-21 | 2012-03-22 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Strahlungseintrittsfenster für einen Strahlungsdetektor |
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-
1996
- 1996-07-19 US US08/684,166 patent/US6002202A/en not_active Expired - Fee Related
-
1997
- 1997-07-18 DE DE69711049T patent/DE69711049T2/de not_active Expired - Fee Related
- 1997-07-18 WO PCT/US1997/012507 patent/WO1998003353A1/en not_active Application Discontinuation
- 1997-07-18 KR KR1019997000318A patent/KR20000067881A/ko not_active Withdrawn
- 1997-07-18 EP EP97936094A patent/EP0912351B1/en not_active Expired - Lifetime
- 1997-07-18 JP JP10507084A patent/JP2000517461A/ja active Pending
- 1997-07-18 AU AU38849/97A patent/AU3884997A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| DE69711049D1 (de) | 2002-04-18 |
| AU3884997A (en) | 1998-02-10 |
| EP0912351A1 (en) | 1999-05-06 |
| JP2000517461A (ja) | 2000-12-26 |
| EP0912351B1 (en) | 2002-03-13 |
| US6002202A (en) | 1999-12-14 |
| DE69711049T2 (de) | 2002-10-24 |
| EP0912351A4 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1999-05-06 |
| WO1998003353A1 (en) | 1998-01-29 |
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