KR19990067915A - 단파장 이미지화를 위한 중합체 및 포토레지스트 조성물 - Google Patents

단파장 이미지화를 위한 중합체 및 포토레지스트 조성물 Download PDF

Info

Publication number
KR19990067915A
KR19990067915A KR1019990000959A KR19990000959A KR19990067915A KR 19990067915 A KR19990067915 A KR 19990067915A KR 1019990000959 A KR1019990000959 A KR 1019990000959A KR 19990000959 A KR19990000959 A KR 19990000959A KR 19990067915 A KR19990067915 A KR 19990067915A
Authority
KR
South Korea
Prior art keywords
polymer
photoresist
photoresist composition
formula
groups
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019990000959A
Other languages
English (en)
Korean (ko)
Inventor
테일러게리엔
바클레이조지지
스즈만다찰스알
Original Assignee
마티네즈 길러모
쉬플리 캄파니, 엘.엘.씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마티네즈 길러모, 쉬플리 캄파니, 엘.엘.씨. filed Critical 마티네즈 길러모
Publication of KR19990067915A publication Critical patent/KR19990067915A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1019990000959A 1998-01-15 1999-01-15 단파장 이미지화를 위한 중합체 및 포토레지스트 조성물 Ceased KR19990067915A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/007,617 US6165674A (en) 1998-01-15 1998-01-15 Polymers and photoresist compositions for short wavelength imaging
US9/007,617 1998-01-15

Publications (1)

Publication Number Publication Date
KR19990067915A true KR19990067915A (ko) 1999-08-25

Family

ID=21727212

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990000959A Ceased KR19990067915A (ko) 1998-01-15 1999-01-15 단파장 이미지화를 위한 중합체 및 포토레지스트 조성물

Country Status (4)

Country Link
US (1) US6165674A (enExample)
EP (1) EP0930542A1 (enExample)
JP (1) JPH11258809A (enExample)
KR (1) KR19990067915A (enExample)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706826B1 (en) 1998-03-27 2004-03-16 Mitsubishi Rayon Co., Ltd. Copolymer, process for producing the same, and resist composition
KR100574574B1 (ko) * 1998-08-26 2006-04-28 스미또모 가가꾸 가부시키가이샤 화학 증폭형 포지티브 내식막 조성물
KR20000047909A (ko) * 1998-12-10 2000-07-25 마티네즈 길러모 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물
US6692888B1 (en) * 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
US6492086B1 (en) 1999-10-08 2002-12-10 Shipley Company, L.L.C. Phenolic/alicyclic copolymers and photoresists
IL139513A (en) * 1999-11-09 2004-12-15 Jsr Corp N -sulfonylaxamide and radiation-resistant resins that use these compounds
US6777157B1 (en) 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
US6306554B1 (en) 2000-05-09 2001-10-23 Shipley Company, L.L.C. Polymers containing oxygen and sulfur alicyclic units and photoresist compositions comprising same
US7132214B2 (en) * 2000-09-08 2006-11-07 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
US6811961B2 (en) 2001-02-25 2004-11-02 Shipley Company, L.L.C. Photoacid generator systems for short wavelength imaging
US6737215B2 (en) * 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
US6686429B2 (en) 2001-05-11 2004-02-03 Clariant Finance (Bvi) Limited Polymer suitable for photoresist compositions
TWI322334B (en) 2004-07-02 2010-03-21 Rohm & Haas Elect Mat Method for processing a photoresist composition in an immersion photolithography process and system and organic barrier composition used therein
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
EP1691238A3 (en) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
EP1762895B1 (en) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
TWI477909B (zh) * 2006-01-24 2015-03-21 Fujifilm Corp 正型感光性組成物及使用它之圖案形成方法
TWI598223B (zh) 2006-03-10 2017-09-11 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
EP2420892A1 (en) 2006-10-30 2012-02-22 Rohm and Haas Electronic Materials LLC Compositions and processes for immersion lithography
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
US20080248331A1 (en) 2007-04-06 2008-10-09 Rohm And Haas Electronic Materials Llc Coating composition
EP2056162B1 (en) 2007-11-05 2016-05-04 Rohm and Haas Electronic Materials LLC Process for immersion lithography
JP2009199061A (ja) 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
EP2189846B1 (en) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2189847A3 (en) 2008-11-19 2010-07-21 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
EP2784584A1 (en) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Compositions comprising sulfonamide material and processes for photolithography
EP2189845B1 (en) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204694A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
EP2204392A1 (en) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Compositions and processes for photolithography
JP5719514B2 (ja) 2009-02-08 2015-05-20 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
US10180627B2 (en) 2009-06-08 2019-01-15 Rohm And Haas Electronic Materials Llc Processes for photolithography
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
KR101855112B1 (ko) 2009-06-22 2018-05-04 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 광산 발생제 및 이를 포함하는 포토레지스트
CN102225924B (zh) 2009-12-10 2015-04-01 罗门哈斯电子材料有限公司 光酸发生剂和包含该光酸发生剂的光致抗蚀剂
US9671689B2 (en) 2009-12-10 2017-06-06 Rohm And Haas Electronic Materials Llc Cholate photoacid generators and photoresists comprising same
TWI464141B (zh) 2009-12-14 2014-12-11 羅門哈斯電子材料有限公司 磺醯基光酸產生劑及含該光酸產生劑之光阻
EP2348360B1 (en) 2010-01-25 2017-09-27 Rohm and Haas Electronic Materials LLC Photoresist comprising nitrogen-containing compound
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤およびこれを含むフォトレジスト
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 新規のポリマーおよびフォトレジスト組成物
EP2383611A3 (en) 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
EP2472320A2 (en) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Compositions comprising base-reactive component and processes for photolithography
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2472328B1 (en) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
EP2511766B1 (en) 2011-04-14 2013-07-31 Rohm and Haas Electronic Materials LLC Topcoat compositions for photoresist and immersion photolithography process using them
KR101785426B1 (ko) 2015-04-30 2017-10-17 롬엔드하스전자재료코리아유한회사 포토레지스트 조성물 및 방법
US11480878B2 (en) 2016-08-31 2022-10-25 Rohm And Haas Electronic Materials Korea Ltd. Monomers, polymers and photoresist compositions
CN108264605A (zh) 2016-12-30 2018-07-10 罗门哈斯电子材料韩国有限公司 单体、聚合物和光致抗蚀剂组合物
KR102177417B1 (ko) 2017-12-31 2020-11-11 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 방법
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4968581A (en) * 1986-02-24 1990-11-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
US4810613A (en) * 1987-05-22 1989-03-07 Hoechst Celanese Corporation Blocked monomer and polymers therefrom for use as photoresists
DE3721741A1 (de) * 1987-07-01 1989-01-12 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
JPS6449039A (en) * 1987-08-20 1989-02-23 Tosoh Corp Method for forming positive resist pattern
DE3812325A1 (de) * 1988-04-14 1989-10-26 Basf Ag Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien und verfahren zur herstellung von reliefmustern und reliefbildern
DE3817011A1 (de) * 1988-05-19 1989-11-30 Basf Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefmustern
JP3000745B2 (ja) * 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
DE69320241T2 (de) * 1992-05-06 1999-04-29 Kyowa Hakko Kogyo Co., Ltd., Tokio/Tokyo Chemisch amplifizierte Resistzusammensetzung
DE4319178C2 (de) * 1992-06-10 1997-07-17 Fujitsu Ltd Resist-Zusammensetzung enthaltend ein Polymermaterial und einen Säuregenerator
US5587274A (en) * 1992-06-19 1996-12-24 Nippon Paint Co., Ltd. Resist composition
JP3158710B2 (ja) * 1992-09-16 2001-04-23 日本ゼオン株式会社 化学増幅レジストパターンの形成方法
JPH07191463A (ja) * 1993-12-27 1995-07-28 Fujitsu Ltd レジストおよびこれを使った半導体装置の製造方法
EP1248150A3 (en) * 1993-12-28 2003-11-05 Fujitsu Limited Radiation sensitive material and method for forming pattern
US5607824A (en) * 1994-07-27 1997-03-04 International Business Machines Corporation Antireflective coating for microlithography
JPH0962005A (ja) * 1995-06-14 1997-03-07 Fuji Photo Film Co Ltd ネガ型感光性組成物
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
US5693691A (en) * 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
JP3589365B2 (ja) * 1996-02-02 2004-11-17 富士写真フイルム株式会社 ポジ画像形成組成物

Also Published As

Publication number Publication date
JPH11258809A (ja) 1999-09-24
EP0930542A1 (en) 1999-07-21
US6165674A (en) 2000-12-26

Similar Documents

Publication Publication Date Title
KR19990067915A (ko) 단파장 이미지화를 위한 중합체 및 포토레지스트 조성물
US6057083A (en) Polymers and photoresist compositions
US6740467B2 (en) Photoresist compositions comprising blends of ionic and non-ionic photoacid generators
JP5047502B2 (ja) 樹脂混合物を含むフォトレジスト組成物
KR20000047909A (ko) 이타콘산 무수물 중합체 및 이를 함유하는 포토레지스트조성물
CN1297167A (zh) 酚/脂环的共聚物和光致抗蚀剂
US6989224B2 (en) Polymers with mixed photoacid-labile groups and photoresists comprising same
KR20010088359A (ko) 신규 코폴리머 및 이를 함유하는 포토레지스트 조성물
KR20130084272A (ko) 포토레지스트 조성물
KR20010088327A (ko) 가교결합된 중합체를 함유하는 포지티브 포토레지스트
US6773872B2 (en) Reduction of inorganic contaminants in polymers and photoresist compositions comprising same
KR19990023913A (ko) 신규한 중합체 및 감광성 내식막 조성물
US6852466B2 (en) Photoresist compositions particularly suitable for short wavelength imaging
KR100944727B1 (ko) 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트
US5853953A (en) Polymers and photoresist compositions comprising same
KR100669188B1 (ko) 하이드록시페닐 공중합체 및 이를 함유하는 포토레지스트
CN1310090C (zh) 新共聚物及光致抗蚀组合物
US20050202339A1 (en) Negative photoresist and method of using thereof
KR20060043054A (ko) 포토레지스트 조성물

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19990115

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20040115

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19990115

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20051122

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20060407

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20051122

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I