KR19990022008A - 복합 광학적 회절 격자 결합을 가지는 ｄｆｂ 레이저 다이오드 구조물 - Google Patents

복합 광학적 회절 격자 결합을 가지는 ｄｆｂ 레이저 다이오드 구조물 Download PDF

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Publication number
KR19990022008A
KR19990022008A KR1019970708483A KR19970708483A KR19990022008A KR 19990022008 A KR19990022008 A KR 19990022008A KR 1019970708483 A KR1019970708483 A KR 1019970708483A KR 19970708483 A KR19970708483 A KR 19970708483A KR 19990022008 A KR19990022008 A KR 19990022008A
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KR
South Korea
Prior art keywords
layer
capacitive
diffraction grating
semiconductor material
indicator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1019970708483A
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English (en)
Korean (ko)
Inventor
베른트 보르헤르트
베른하르트 스테크뮐러
Original Assignee
디어터 크리스트, 베르너 뵈켈
지멘스 악티엔게젤샤프트
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Publication of KR19990022008A publication Critical patent/KR19990022008A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
KR1019970708483A 1995-05-31 1996-05-13 복합 광학적 회절 격자 결합을 가지는 ｄｆｂ 레이저 다이오드 구조물 Abandoned KR19990022008A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19520043.8 1995-05-31
DE19520043 1995-05-31

Publications (1)

Publication Number Publication Date
KR19990022008A true KR19990022008A (ko) 1999-03-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970708483A Abandoned KR19990022008A (ko) 1995-05-31 1996-05-13 복합 광학적 회절 격자 결합을 가지는 ｄｆｂ 레이저 다이오드 구조물

Country Status (10)

Country Link
US (1) US5953361A (https=)
EP (1) EP0829121B1 (https=)
JP (1) JP3469583B2 (https=)
KR (1) KR19990022008A (https=)
CN (1) CN1191638A (https=)
DE (1) DE59600746D1 (https=)
ES (1) ES2124095T3 (https=)
IN (1) IN188901B (https=)
TW (1) TW304310B (https=)
WO (1) WO1996038890A1 (https=)

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JP3842976B2 (ja) * 2000-03-17 2006-11-08 富士通株式会社 分布帰還型半導体レーザとその製造方法
JP3745985B2 (ja) * 2001-01-24 2006-02-15 古河電気工業株式会社 複素結合型の分布帰還型半導体レーザ素子
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US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
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US7663762B2 (en) * 2002-07-09 2010-02-16 Finisar Corporation High-speed transmission system comprising a coupled multi-cavity optical discriminator
US7263291B2 (en) * 2002-07-09 2007-08-28 Azna Llc Wavelength division multiplexing source using multifunctional filters
US10012797B1 (en) 2002-10-08 2018-07-03 Infinera Corporation Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
US7536113B2 (en) * 2002-11-06 2009-05-19 Finisar Corporation Chirp managed directly modulated laser with bandwidth limiting optical spectrum reshaper
US7564889B2 (en) * 2002-11-06 2009-07-21 Finisar Corporation Adiabatically frequency modulated source
US7280721B2 (en) * 2002-11-06 2007-10-09 Azna Llc Multi-ring resonator implementation of optical spectrum reshaper for chirp managed laser technology
US8792531B2 (en) 2003-02-25 2014-07-29 Finisar Corporation Optical beam steering for tunable laser applications
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US20070054467A1 (en) * 2005-09-07 2007-03-08 Amberwave Systems Corporation Methods for integrating lattice-mismatched semiconductor structure on insulators
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US7875958B2 (en) * 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
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US8131157B2 (en) 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
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US8204386B2 (en) 2007-04-06 2012-06-19 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
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US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
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Also Published As

Publication number Publication date
TW304310B (https=) 1997-05-01
DE59600746D1 (de) 1998-12-03
JP3469583B2 (ja) 2003-11-25
IN188901B (https=) 2002-11-16
EP0829121B1 (de) 1998-10-28
JPH11505965A (ja) 1999-05-25
CN1191638A (zh) 1998-08-26
ES2124095T3 (es) 1999-01-16
US5953361A (en) 1999-09-14
WO1996038890A1 (de) 1996-12-05
EP0829121A1 (de) 1998-03-18

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