KR19980037176A - Method of forming interlayer insulating film of semiconductor device - Google Patents

Abstract

When SOG film and interlayer insulating film are formed in semiconductor device, SOG film and interlayer insulating film are processed in-situ to improve defects caused by heat treatment of SOG film and to improve stability by shortening delay time when forming interlayer insulating film. A method of forming an interlayer insulating film of a semiconductor device is disclosed.

Description

Method of forming interlayer insulating film of semiconductor device

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a metal interlayer insulating film of a semiconductor device having a multi-metal wiring structure, and more particularly, to a method for shortening a series of processes for forming an SOG film and an interlayer insulating film used for surface planarization.

In a conventional semiconductor manufacturing process, the first interlayer insulating film is formed to insulate metal wirings, and then the SOG film and the second interlayer insulating film are sequentially formed to planarize the surface. However, in forming the SOG film, the SOG solution is applied to a silicon substrate, and then a long heat treatment process is performed in a tube. At this time, cracks are likely to occur in the silicon substrate due to prolonged heat treatment. After the heat treatment process, the SOG film exposed to air while moving to another chamber to form the second interlayer insulating film absorbs moisture. Subsequently, when the second interlayer insulating film is formed on the SOG film absorbing the moisture, the stability of the device may be deteriorated.

Accordingly, the present invention provides a method for forming an interlayer insulating film of a semiconductor device, which can solve the above-mentioned problems by performing an in-situ process of simultaneously performing two processes in multiple chambers when forming an SOG film and a second interlayer insulating film. The purpose is to provide.

In order to achieve the above object, the method for forming a metal interlayer dielectric film of the present invention comprises forming a patterned metal layer on a silicon substrate, forming a first interlayer dielectric film from the step, and SOG solution in the chamber from the step. Forming a SOG film by heat-treating the SOG solution in the chamber from the step; and forming a second interlayer insulating film in the chamber from the step. The heat treatment of the SOG solution and the process of forming the second interlayer dielectric film are performed in an in-situ process.

1A to 1B are cross-sectional views for explaining a method for forming an interlayer insulating film of a semiconductor device according to the present invention.

Explanation of symbols on the main parts of the drawings

1: silicon substrate 2: metal layer

3: first interlayer insulating film 4: SOG film

5: second interlayer insulating film

Hereinafter, with reference to the accompanying drawings, the present invention will be described in detail.

1A to 1B are cross-sectional views of devices for explaining an interlayer insulating and planarization method of a semiconductor device according to the present invention.

FIG. 1A shows a state where a patterned metal layer 2 and a first interlayer insulating film 3 are formed on a silicon substrate 1.

FIG. 1B shows a state in which the SOG film 4 and the second interlayer insulating film 5 are formed over the entire first interlayer insulating film 3. In this case, two processes of heat treating the SOG solution and forming the second interlayer insulating film 5 to form the SOG film 4 in the multiple chamber are performed in-situ.

As described above, according to the present invention, the SOG film and the second interlayer insulating film are formed in-situ in a single multiple chamber, thereby simplifying the process and preventing the device from being exposed to air. Therefore, there is an effect such as shortening the production time, improving the stability of the device and suppressed defects due to the thermal process.

Claims (2)

Forming and patterning a metal layer on the silicon substrate; Forming a first interlayer insulating film from the step; Applying SOG solution in the chamber from the step; Heat treating the SOG solution in the chamber from the step to form an SOG film; A method of forming an interlayer insulating film of a semiconductor device, the method comprising forming a second interlayer insulating film in the chamber from the step; And heat treating the SOG solution and forming the second interlayer dielectric film in an in-situ process. The method of claim 1, And the chamber uses multiple chambers.