KR100571254B1 - Oxide film formation method of semiconductor device - Google Patents

Oxide film formation method of semiconductor device Download PDF

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KR100571254B1
KR100571254B1 KR1019960075162A KR19960075162A KR100571254B1 KR 100571254 B1 KR100571254 B1 KR 100571254B1 KR 1019960075162 A KR1019960075162 A KR 1019960075162A KR 19960075162 A KR19960075162 A KR 19960075162A KR 100571254 B1 KR100571254 B1 KR 100571254B1
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oxide film
gas
forming
silicon substrate
teos
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KR1019960075162A
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KR19980055925A (en
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최병대
박동수
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Abstract

본 발명은 반도체 소자의 산화막 형성방법에 관한 것으로, 소정의 공정을 거친 실리콘 기판 상에 TEOS 및 2N2O 가스를 이용하여 산화막을 형성하거나 또는 TEOS 및 O2 가스를 이용하여 산화막을 형성한 후 N2O 가스를 이용한 열처리 공정을 실시하므로써 균일한 산화막 형성으로 인하여 충분한 공정마진 및 생산비용을 절감할 수 있는 효과가 있다.The present invention relates to a method of forming an oxide film of a semiconductor device, wherein an oxide film is formed using TEOS and 2N 2 O gas on a silicon substrate which has been subjected to a predetermined process, or an oxide film is formed using TEOS and O 2 gas and then N By performing the heat treatment process using 2 O gas, due to the uniform oxide film formation, there is an effect that can reduce the sufficient process margin and production cost.

Description

반도체 소자의 산화막 형성방법Oxide film formation method of semiconductor device

본 발명은 산화막 형성방법에 관한 것으로 특히, 게이트 전극의 양 측벽 및 콘택홀의 약 측벽에 형성되는 스페이서용 산화막을 형성하기 위한 반도체 소자의 산화막 형성방법에 관한 것이다.The present invention relates to a method of forming an oxide film, and more particularly, to a method of forming an oxide film of a semiconductor device for forming an oxide film for a spacer formed on both sidewalls of a gate electrode and about sidewalls of a contact hole.

일반적으로 반도체 소자의 제조 공정에서 게이트 전극을 형성한 후 LDD(Lightly Doped Drain) 구조를 갖는 접합영역을 형성하기 위하여 게이트 전극의 측벽에 산화막 스페이서를 형성한다. 또한 전하 저장전극을 형성하기 위해 형성된 콘택홀은 전하 저장전극을 이루는 폴리실리콘층의 층덮힘(Step Coverage) 특성을 향상시키기 위하여 그 측벽에 산화막 스페이서를 형성한다. 이러한 산화막 스페이서를 형성하기 위해서는 산화막을 소정 두께로 형성한 후 전면 식각공정으로 산화막을 식각하면 단차를 갖는 부분의 측벽에 산화막이 스페이서 형태로 남게된다. 종래에는 게이트 전극의 양 측벽에 산화막 스페이서를 형성하기 위하여 SiH4 및 N2O 가스를 이용한 산화막을 형성한 후 전면 식각공정을 실시하였는데, 이렇게 형성된 산화막 스페이서는 막의 특성이 양호한 반면 1 배치(Batch) 당 50매의 웨이퍼만 진행하여도 균일도가 저하한다. 그리고, 콘택홀의 양 측벽에 산화막 스페이서를 형성하기 위하여 TEOS(Tetra Ethy1 Ortho Silicate) 및 O2 가스를 이용한 산화막을 형성한 후 전면 식각공정을 실시하였는데, 이렇게 형성된 산화막 스페이서는 균일도가 양호한 반면 막의 특성상 누설전류가 증가하고, 브리지(Bridge) 형성 등으로 인하여 소자의 특성이 저하하는 문제가 발생된다.In general, an oxide spacer is formed on sidewalls of a gate electrode to form a junction region having a lightly doped drain (LDD) structure after the gate electrode is formed in a semiconductor device manufacturing process. In addition, the contact hole formed to form the charge storage electrode forms an oxide spacer on the sidewall of the polysilicon layer constituting the charge storage electrode to improve the step coverage property of the polysilicon layer. In order to form the oxide film spacer, the oxide film is formed to a predetermined thickness, and then the oxide film is etched by the entire surface etching process to leave the oxide film in the form of a spacer on the sidewall of the stepped portion. Conventionally, in order to form oxide spacers on both sidewalls of the gate electrode, an oxide layer using SiH 4 and N 2 O gas was formed, and then an entire surface etching process was performed. Even if only 50 wafers advance, the uniformity decreases. In order to form oxide spacers on both sidewalls of the contact holes, an oxide layer using TEOS (Tetra Ethy1 Ortho Silicate) and O 2 gas was formed, and then an entire surface etching process was performed. The current increases, and the problem of deterioration of device characteristics occurs due to the formation of a bridge.

따라서 본 발명은 소정의 공정을 거친 실리콘 기판 상에 TEOS 및 2N2O 가스를 이용하여 산화막을 형성하거나 또는 TEOS 및 O2 가스를 이용하여 산화막을 형성한 후 N2O 가스를 이용한 열처리 공정을 실시하므로써 막의 특성 및 균일도가 양호한 반도체 소자의 산화막 형성방법을 제공하는 것을 그 목적으로 한다.Therefore, in the present invention, an oxide film is formed by using TEOS and 2N 2 O gas on a silicon substrate that has been subjected to a predetermined process, or an oxide film is formed by using TEOS and O 2 gas, and then heat treatment is performed using N 2 O gas. It is therefore an object of the present invention to provide a method for forming an oxide film of a semiconductor device having good film properties and uniformity.

상술한 목적을 실현하기 위한 본 발명에 따른 산화막 형성방법은 소정의 공정을 거쳐 실리콘 기판 상에 게이트 전극 또는 전하 저장전극용 콘택홀을 형성하는 단계와, 실리콘 기판의 전체 상부면에 TEOS 및 2N2O 가스를 이용하여 산화막을 형성하는 단계로 이루어진다.The oxide film forming method according to the present invention for achieving the above object is a step of forming a contact hole for a gate electrode or a charge storage electrode on a silicon substrate through a predetermined process, TEOS and 2N 2 on the entire upper surface of the silicon substrate It forms a oxide film using O gas.

상술한 목적을 실현하기 위한 본 발명의 또 다른 산화막 형성방법은 소정의 공정을 거쳐 실리콘 기판 상에 게이트 전극 또는 전하 저장전극용 콘택홀을 형성하는 단계와, 실리콘 기판의 전체 상부면에 TEOS 및 O2 가스를 이용하여 산화막을 형성하는 단계와, 산화막에 열처리 공정을 실시하는 단계로 이루어지며 상기 열처리 공정은 N2O 가스 분위기 및 800 내지 1000℃의 온도 조건에서 실시된다.Another oxide film forming method of the present invention for realizing the above object is a step of forming a contact hole for a gate electrode or a charge storage electrode on a silicon substrate through a predetermined process, TEOS and O on the entire upper surface of the silicon substrate Forming an oxide film using two gases, and performing a heat treatment process on the oxide film, wherein the heat treatment process is performed under an N 2 O gas atmosphere and a temperature condition of 800 to 1000 ° C.

이하, 본 발명의 산화막 형성방법을 설명하면 다음과 같다.Hereinafter, the oxide film forming method of the present invention will be described.

소정의 공정을 거쳐 실리콘 기판 상에 게이트 전극 또는 전하 저장전극용 콘택홀을 형성한다. 다음으로 실리콘 기판의 전체 상부면에 산화막을 형성한다. 이때, 산화막은 다음의 2가지 방법에 의해 형성된다.The contact hole for the gate electrode or the charge storage electrode is formed on the silicon substrate through a predetermined process. Next, an oxide film is formed on the entire upper surface of the silicon substrate. At this time, the oxide film is formed by the following two methods.

첫째는 TEOS 및 2N2O 가스를 이용하여 산화막을 형성한다.First, an oxide film is formed using TEOS and 2N 2 O gas.

둘째는 TEOS 및 O2 가스를 이용하여 산화막을 형성한 후 열처리 공정을 실시한다. 상기 열처리 공정은 N2O 가스 분위기 및 800 내지 1000℃의 온도 조건에서 실시된다.Secondly, an oxide film is formed using TEOS and O 2 gas, and then heat treatment is performed. The heat treatment step is carried out in a N 2 O gas atmosphere and temperature conditions of 800 to 1000 ℃.

이후, 후속 공정으로 산화막을 전면 식각하여 상기 게이트 전극 또는 콘택홀의 측벽에 산화막 스페이서를 형성한다.Subsequently, the oxide layer is etched entirely in a subsequent process to form oxide spacers on sidewalls of the gate electrode or contact hole.

본 실시예에서는 단지 게이트 전극 또는 콘택홀의 측벽에 산화막 스페이서를 형성하기 위하여 형성되는 산화막을 설명하였으나 본 발명은 이것에 한정되는 것은 아니다. 즉, 본 실시예의 산화막을 이용하여 다중 금속층 사이의 층간 절연막으로 사용하거나 또는 폴리실리콘층 사이에 절연막으로 사용할 수 있음은 물론이다.In the present embodiment, only an oxide film formed to form an oxide film spacer on the sidewall of a gate electrode or a contact hole has been described, but the present invention is not limited thereto. That is, the oxide film of the present embodiment can be used as an interlayer insulating film between multiple metal layers or as an insulating film between polysilicon layers.

상술한 바와같이 본 발명에 의하면 소정의 공정을 거친 실리콘 기판 상에 TEOS 및 2N2O 가스를 이용하여 산화막을 형성하거나 또는 TEOS 및 O2 가스를 이용하여 산화막을 형성한 후 N2O 가스를 이용한 열처리 공정을 실시하고, 상기 산화막에 전면식각 공정을 실시하여 산화막 스페이서를 형성하므로써 다음과 같은 효과가 있다.Described above, according to the present invention as described using the TEOS and 2N 2 O gas to a silicon substrate via a predetermined process to form an oxide film, or TEOS, and by using the O 2 gas and then forming an oxide film using a N 2 O gas By performing a heat treatment process and performing an entire surface etching process on the oxide film to form an oxide film spacer, the following effects are obtained.

첫째, 균일한 산화막 형성으로 인하여 충분한 공정마진을 확보할 수 있다.First, sufficient process margin can be secured due to the formation of a uniform oxide film.

둘째, 1배치당 150매 이상의 웨이퍼에 균일한 산화막을 형성하므로써 생산비용의 절감 및 장비 구입시 지출을 줄일 수 있다.Second, by forming a uniform oxide film on more than 150 wafers per batch, it is possible to reduce production costs and to reduce equipment purchases.

마지막으로, 양호한 산화막의 형성으로 전하 저장전극의 누설전류를 감소시킬 수 있고, 층간 절연막으로 사용할 경우 절연특성을 향상시킬 수 있다.Finally, the formation of a good oxide film can reduce the leakage current of the charge storage electrode, and can improve the insulating properties when used as an interlayer insulating film.

Claims (3)

반도체 소자의 산화막 형성 방법에 있어서,In the oxide film formation method of a semiconductor element, 소정의 공정을 통해 실리콘 기판 상부에 게이트 전극 또는 전하저장전극용 콘택홀을 형성하는 단계; 및Forming a contact hole for a gate electrode or a charge storage electrode on the silicon substrate through a predetermined process; And 상기 실리콘 기판의 전체 상부면에 TEOS 및 2N2O 가스를 이용하여 산화막을 형성하는 단계로 이루어진 것을 특징으로 하는 반도체 소자의 산화막 형성 방법.Forming an oxide film on the entire upper surface of the silicon substrate by using TEOS and 2N 2 O gas. 반도체 소자의 산화막 형성 방법에 있어서,In the oxide film formation method of a semiconductor element, 소정의 공정을 통해 실리콘 기판 상부에 게이트 전극 또는 전하저장전극용 콘택홀을 형성하는 단계;Forming a contact hole for a gate electrode or a charge storage electrode on the silicon substrate through a predetermined process; 상기 실리콘 기판의 전체 상부면에 TEOS 및 O2 가스를 이용하여 산화막을 형성하는 단계; 및Forming an oxide film using TEOS and O 2 gas on the entire upper surface of the silicon substrate; And 상기 산화막에 N2O 가스 분위기에서 열처리 공정을 실시하는 단계로 이루어진 것을 특징으로 하는 반도체 소자의 산화막 형성 방법.And performing a heat treatment process on the oxide film in an N 2 O gas atmosphere. 제 2 항에 있어서, 상기 N2O 가스 분위기의 열처리 공정은 800 내지 1000℃의 온도 조건으로 실시하는 반도체 소자의 산화막 형성 방법.The method of forming an oxide film of a semiconductor device according to claim 2, wherein the heat treatment step of the N 2 O gas atmosphere is performed at a temperature condition of 800 to 1000 ° C.
KR1019960075162A 1996-12-28 1996-12-28 Oxide film formation method of semiconductor device KR100571254B1 (en)

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KR100821090B1 (en) * 2006-12-28 2008-04-08 동부일렉트로닉스 주식회사 Semiconductor device fabricating method

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JPH02140957A (en) * 1988-11-22 1990-05-30 Seiko Epson Corp Manufacture of semiconductor device
JPH03229427A (en) * 1990-02-05 1991-10-11 Matsushita Electron Corp Manufacture of mos-type semiconductor device
JPH03278435A (en) * 1990-02-05 1991-12-10 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH03297146A (en) * 1990-04-17 1991-12-27 Oki Electric Ind Co Ltd Manufacture of semiconductor element
KR950006962A (en) * 1993-08-18 1995-03-21 문정환 Oxide film deposition method
KR950021521A (en) * 1993-12-07 1995-07-26 김주용 Method of forming charge storage electrode of capacitor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02140957A (en) * 1988-11-22 1990-05-30 Seiko Epson Corp Manufacture of semiconductor device
JPH03229427A (en) * 1990-02-05 1991-10-11 Matsushita Electron Corp Manufacture of mos-type semiconductor device
JPH03278435A (en) * 1990-02-05 1991-12-10 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JPH03297146A (en) * 1990-04-17 1991-12-27 Oki Electric Ind Co Ltd Manufacture of semiconductor element
KR950006962A (en) * 1993-08-18 1995-03-21 문정환 Oxide film deposition method
KR950021521A (en) * 1993-12-07 1995-07-26 김주용 Method of forming charge storage electrode of capacitor

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