KR980006122A - Method for forming interlayer insulating film of semiconductor device - Google Patents
Method for forming interlayer insulating film of semiconductor device Download PDFInfo
- Publication number
- KR980006122A KR980006122A KR1019960022813A KR19960022813A KR980006122A KR 980006122 A KR980006122 A KR 980006122A KR 1019960022813 A KR1019960022813 A KR 1019960022813A KR 19960022813 A KR19960022813 A KR 19960022813A KR 980006122 A KR980006122 A KR 980006122A
- Authority
- KR
- South Korea
- Prior art keywords
- interlayer insulating
- film
- insulating film
- forming
- semiconductor device
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 반도체 소자의 금속층간 절연막 형성 방법에 관한 것으로, 비아 홀(Via hole)내에서 수분과의 접촉으로 인한 금속층의 부식을 방지하기 위하여 SOG막을 형성한 후 상기 SOG막내에 함유된 수분을 완전히 제거하고, 상기 SOG막상에 수분 투과율이 높은 TEOS막을 형성하므로써 비아 홀내에서 수분과의 접촉으로 인한 상부 금속층의 부식이 방지된다. 따라서 소자의 신뢰성 및 수율이 증대될 수 있는 반도체 소자의 금속층간 절연막 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming an interlayer insulating film of a semiconductor device, and after forming an SOG film to prevent corrosion of the metal layer due to contact with moisture in a via hole, the moisture contained in the SOG film is completely removed. By removing and forming a TEOS film having a high moisture permeability on the SOG film, corrosion of the upper metal layer due to contact with moisture in the via hole is prevented. Accordingly, the present invention relates to a method for forming an interlayer insulating film of a semiconductor device, which can increase the reliability and yield of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1a도 내지 제1c도는 본 발명에 따른 반도체 소자의 금속층간 절연막 형성 방법을 설명하기 위한 소자의 단면도.1A to 1C are cross-sectional views of a device for explaining a method for forming an interlayer insulating film of a semiconductor device according to the present invention.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960022813A KR980006122A (en) | 1996-06-22 | 1996-06-22 | Method for forming interlayer insulating film of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960022813A KR980006122A (en) | 1996-06-22 | 1996-06-22 | Method for forming interlayer insulating film of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR980006122A true KR980006122A (en) | 1998-03-30 |
Family
ID=66287544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960022813A KR980006122A (en) | 1996-06-22 | 1996-06-22 | Method for forming interlayer insulating film of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR980006122A (en) |
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1996
- 1996-06-22 KR KR1019960022813A patent/KR980006122A/en not_active Application Discontinuation
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