KR102943232B1 - 도금 처리 방법 및 도금 처리 장치 - Google Patents

도금 처리 방법 및 도금 처리 장치

Info

Publication number
KR102943232B1
KR102943232B1 KR1020227030048A KR20227030048A KR102943232B1 KR 102943232 B1 KR102943232 B1 KR 102943232B1 KR 1020227030048 A KR1020227030048 A KR 1020227030048A KR 20227030048 A KR20227030048 A KR 20227030048A KR 102943232 B1 KR102943232 B1 KR 102943232B1
Authority
KR
South Korea
Prior art keywords
plating
substrate
plating solution
wafer
supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227030048A
Other languages
English (en)
Korean (ko)
Other versions
KR20220139347A (ko
Inventor
마사토 하마다
마사미 아키모토
마사토시 시라이시
사토시 가네코
카즈키 모토마츠
카즈유키 고토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20220139347A publication Critical patent/KR20220139347A/ko
Application granted granted Critical
Publication of KR102943232B1 publication Critical patent/KR102943232B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/06—Suspending or supporting devices for articles to be coated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/10—Agitating of electrolytes; Moving of racks
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/003—Electroplating using gases, e.g. pressure influence
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Automation & Control Theory (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020227030048A 2020-02-06 2021-02-01 도금 처리 방법 및 도금 처리 장치 Active KR102943232B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020019042 2020-02-06
JPJP-P-2020-019042 2020-02-06
PCT/JP2021/003455 WO2021157504A1 (ja) 2020-02-06 2021-02-01 めっき処理方法およびめっき処理装置

Publications (2)

Publication Number Publication Date
KR20220139347A KR20220139347A (ko) 2022-10-14
KR102943232B1 true KR102943232B1 (ko) 2026-03-25

Family

ID=77200636

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227030048A Active KR102943232B1 (ko) 2020-02-06 2021-02-01 도금 처리 방법 및 도금 처리 장치

Country Status (5)

Country Link
US (1) US20230042744A1 (enExample)
JP (1) JP7325550B2 (enExample)
KR (1) KR102943232B1 (enExample)
TW (1) TWI895334B (enExample)
WO (1) WO2021157504A1 (enExample)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270945A (en) * 1975-12-10 1977-06-13 Inoue Japax Res Plating method
JPS5792191A (en) * 1980-11-29 1982-06-08 Nec Corp Partial plating method
US20060234508A1 (en) * 2002-05-17 2006-10-19 Mitsuhiko Shirakashi Substrate processing apparatus and substrate processing method
JP2004315889A (ja) * 2003-04-16 2004-11-11 Ebara Corp 半導体基板のめっき方法
JP2005133160A (ja) 2003-10-30 2005-05-26 Ebara Corp 基板処理装置及び方法
JP2007051362A (ja) * 2005-07-19 2007-03-01 Ebara Corp めっき装置及びめっき液の管理方法
US10472730B2 (en) * 2009-10-12 2019-11-12 Novellus Systems, Inc. Electrolyte concentration control system for high rate electroplating
TWI523976B (zh) * 2010-05-19 2016-03-01 諾菲勒斯系統公司 利用具有雙態抑制劑的電解液之矽穿孔填充
KR20130139265A (ko) * 2010-10-13 2013-12-20 도쿄엘렉트론가부시키가이샤 템플레이트 및 기판의 처리 방법
WO2013108452A1 (ja) * 2012-01-20 2013-07-25 東京エレクトロン株式会社 支持基板及び基板の処理方法
JP2018040048A (ja) * 2016-09-09 2018-03-15 株式会社東芝 電気めっき装置、電気めっき方法、及び半導体装置の製造方法

Also Published As

Publication number Publication date
TWI895334B (zh) 2025-09-01
US20230042744A1 (en) 2023-02-09
JPWO2021157504A1 (enExample) 2021-08-12
JP7325550B2 (ja) 2023-08-14
WO2021157504A1 (ja) 2021-08-12
TW202140864A (zh) 2021-11-01
KR20220139347A (ko) 2022-10-14

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