KR102903522B1 - 기판 처리 방법 및 기판 처리 장치 - Google Patents

기판 처리 방법 및 기판 처리 장치

Info

Publication number
KR102903522B1
KR102903522B1 KR1020227037213A KR20227037213A KR102903522B1 KR 102903522 B1 KR102903522 B1 KR 102903522B1 KR 1020227037213 A KR1020227037213 A KR 1020227037213A KR 20227037213 A KR20227037213 A KR 20227037213A KR 102903522 B1 KR102903522 B1 KR 102903522B1
Authority
KR
South Korea
Prior art keywords
substrate
wafer
film
laser light
surface film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227037213A
Other languages
English (en)
Korean (ko)
Other versions
KR20220156947A (ko
Inventor
하야토 타노우에
요헤이 야마시타
야스타카 미조모토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20220156947A publication Critical patent/KR20220156947A/ko
Application granted granted Critical
Publication of KR102903522B1 publication Critical patent/KR102903522B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • H01L21/67092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020227037213A 2020-04-02 2021-01-18 기판 처리 방법 및 기판 처리 장치 Active KR102903522B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-066397 2020-04-02
JP2020066397 2020-04-02
PCT/JP2021/001526 WO2021199585A1 (ja) 2020-04-02 2021-01-18 基板処理方法及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20220156947A KR20220156947A (ko) 2022-11-28
KR102903522B1 true KR102903522B1 (ko) 2025-12-23

Family

ID=77929924

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227037213A Active KR102903522B1 (ko) 2020-04-02 2021-01-18 기판 처리 방법 및 기판 처리 장치

Country Status (6)

Country Link
US (1) US12381085B2 (https=)
JP (2) JP7354420B2 (https=)
KR (1) KR102903522B1 (https=)
CN (1) CN115335968A (https=)
TW (1) TWI896595B (https=)
WO (1) WO2021199585A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI855139B (zh) * 2019-10-28 2024-09-11 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
JP7814972B2 (ja) * 2022-02-22 2026-02-17 東京エレクトロン株式会社 重合基板の処理方法及び基板処理システム
JP7742328B2 (ja) * 2022-03-25 2025-09-19 東京エレクトロン株式会社 処理方法及び処理システム
JP2024046238A (ja) * 2022-09-22 2024-04-03 株式会社ディスコ ウエーハの加工方法および加工装置
JPWO2024142947A1 (https=) * 2022-12-26 2024-07-04
WO2024247740A1 (ja) * 2023-05-30 2024-12-05 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012986A1 (ja) 2018-07-12 2020-01-16 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257139A (ja) * 2000-01-07 2001-09-21 Canon Inc 半導体基板とその作製方法
US7378332B2 (en) * 2002-05-20 2008-05-27 Sumitomo Mitsubishi Silicon Corporation Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method
JP2004200494A (ja) * 2002-12-19 2004-07-15 Dainippon Screen Mfg Co Ltd 薄膜除去装置および薄膜除去方法
JP2006108532A (ja) 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2006212646A (ja) 2005-02-01 2006-08-17 Canon Machinery Inc 周期構造作成方法
JP2006286727A (ja) * 2005-03-31 2006-10-19 Denso Corp 複数の半導体装置を備えた半導体ウェハおよびそのダイシング方法
JP6380245B2 (ja) * 2015-06-15 2018-08-29 信越半導体株式会社 Ｓｏｉウェーハの製造方法
KR102903523B1 (ko) * 2018-04-27 2025-12-23 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
KR102944322B1 (ko) 2018-07-19 2026-03-27 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
JP7086201B2 (ja) * 2018-09-25 2022-06-17 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP2021190439A (ja) * 2020-05-25 2021-12-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TW202326839A (zh) * 2021-08-06 2023-07-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR20240073916A (ko) * 2021-09-30 2024-05-27 도쿄엘렉트론가부시키가이샤 처리 방법 및 처리 시스템
KR20250078974A (ko) * 2022-09-30 2025-06-04 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012986A1 (ja) 2018-07-12 2020-01-16 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Also Published As

Publication number Publication date
JP7354420B2 (ja) 2023-10-02
US20230178374A1 (en) 2023-06-08
TW202138096A (zh) 2021-10-16
CN115335968A (zh) 2022-11-11
US12381085B2 (en) 2025-08-05
JPWO2021199585A1 (https=) 2021-10-07
JP2023171405A (ja) 2023-12-01
KR20220156947A (ko) 2022-11-28
TWI896595B (zh) 2025-09-11
WO2021199585A1 (ja) 2021-10-07

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