JP7354420B2 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
JP7354420B2
JP7354420B2 JP2022511556A JP2022511556A JP7354420B2 JP 7354420 B2 JP7354420 B2 JP 7354420B2 JP 2022511556 A JP2022511556 A JP 2022511556A JP 2022511556 A JP2022511556 A JP 2022511556A JP 7354420 B2 JP7354420 B2 JP 7354420B2
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Japan
Prior art keywords
substrate
wafer
film
peripheral edge
surface film
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JP2022511556A
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English (en)
Japanese (ja)
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JPWO2021199585A5 (https=
JPWO2021199585A1 (https=
Inventor
隼斗 田之上
陽平 山下
康隆 溝本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of JPWO2021199585A1 publication Critical patent/JPWO2021199585A1/ja
Publication of JPWO2021199585A5 publication Critical patent/JPWO2021199585A5/ja
Priority to JP2023152078A priority Critical patent/JP2023171405A/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2022511556A 2020-04-02 2021-01-18 基板処理方法及び基板処理装置 Active JP7354420B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023152078A JP2023171405A (ja) 2020-04-02 2023-09-20 基板処理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020066397 2020-04-02
JP2020066397 2020-04-02
PCT/JP2021/001526 WO2021199585A1 (ja) 2020-04-02 2021-01-18 基板処理方法及び基板処理装置

Related Child Applications (1)

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JP2023152078A Division JP2023171405A (ja) 2020-04-02 2023-09-20 基板処理方法

Publications (3)

Publication Number Publication Date
JPWO2021199585A1 JPWO2021199585A1 (https=) 2021-10-07
JPWO2021199585A5 JPWO2021199585A5 (https=) 2022-12-02
JP7354420B2 true JP7354420B2 (ja) 2023-10-02

Family

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Family Applications (2)

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JP2022511556A Active JP7354420B2 (ja) 2020-04-02 2021-01-18 基板処理方法及び基板処理装置
JP2023152078A Withdrawn JP2023171405A (ja) 2020-04-02 2023-09-20 基板処理方法

Family Applications After (1)

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JP2023152078A Withdrawn JP2023171405A (ja) 2020-04-02 2023-09-20 基板処理方法

Country Status (6)

Country Link
US (1) US12381085B2 (https=)
JP (2) JP7354420B2 (https=)
KR (1) KR102903522B1 (https=)
CN (1) CN115335968A (https=)
TW (1) TWI896595B (https=)
WO (1) WO2021199585A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI855139B (zh) * 2019-10-28 2024-09-11 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
JP7814972B2 (ja) * 2022-02-22 2026-02-17 東京エレクトロン株式会社 重合基板の処理方法及び基板処理システム
JP7742328B2 (ja) * 2022-03-25 2025-09-19 東京エレクトロン株式会社 処理方法及び処理システム
JP2024046238A (ja) * 2022-09-22 2024-04-03 株式会社ディスコ ウエーハの加工方法および加工装置
JPWO2024142947A1 (https=) * 2022-12-26 2024-07-04
WO2024247740A1 (ja) * 2023-05-30 2024-12-05 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257139A (ja) 2000-01-07 2001-09-21 Canon Inc 半導体基板とその作製方法
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012986A1 (ja) 2018-07-12 2020-01-16 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020066492A1 (ja) 2018-09-25 2020-04-02 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7378332B2 (en) * 2002-05-20 2008-05-27 Sumitomo Mitsubishi Silicon Corporation Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method
JP2004200494A (ja) * 2002-12-19 2004-07-15 Dainippon Screen Mfg Co Ltd 薄膜除去装置および薄膜除去方法
JP2006108532A (ja) 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2006212646A (ja) 2005-02-01 2006-08-17 Canon Machinery Inc 周期構造作成方法
JP2006286727A (ja) * 2005-03-31 2006-10-19 Denso Corp 複数の半導体装置を備えた半導体ウェハおよびそのダイシング方法
JP6380245B2 (ja) * 2015-06-15 2018-08-29 信越半導体株式会社 Ｓｏｉウェーハの製造方法
KR102903523B1 (ko) * 2018-04-27 2025-12-23 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
KR102944322B1 (ko) 2018-07-19 2026-03-27 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
JP2021190439A (ja) * 2020-05-25 2021-12-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TW202326839A (zh) * 2021-08-06 2023-07-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR20240073916A (ko) * 2021-09-30 2024-05-27 도쿄엘렉트론가부시키가이샤 처리 방법 및 처리 시스템
KR20250078974A (ko) * 2022-09-30 2025-06-04 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257139A (ja) 2000-01-07 2001-09-21 Canon Inc 半導体基板とその作製方法
WO2019176589A1 (ja) 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012986A1 (ja) 2018-07-12 2020-01-16 東京エレクトロン株式会社 基板処理システム及び基板処理方法
WO2020066492A1 (ja) 2018-09-25 2020-04-02 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Also Published As

Publication number Publication date
US20230178374A1 (en) 2023-06-08
TW202138096A (zh) 2021-10-16
CN115335968A (zh) 2022-11-11
KR102903522B1 (ko) 2025-12-23
US12381085B2 (en) 2025-08-05
JPWO2021199585A1 (https=) 2021-10-07
JP2023171405A (ja) 2023-12-01
KR20220156947A (ko) 2022-11-28
TWI896595B (zh) 2025-09-11
WO2021199585A1 (ja) 2021-10-07

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