CN115335968A - 基板处理方法和基板处理装置 - Google Patents

基板处理方法和基板处理装置 Download PDF

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Publication number
CN115335968A
CN115335968A CN202180023726.5A CN202180023726A CN115335968A CN 115335968 A CN115335968 A CN 115335968A CN 202180023726 A CN202180023726 A CN 202180023726A CN 115335968 A CN115335968 A CN 115335968A
Authority
CN
China
Prior art keywords
substrate
wafer
film
laser
surface film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180023726.5A
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English (en)
Chinese (zh)
Inventor
田之上隼斗
山下阳平
沟本康隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN115335968A publication Critical patent/CN115335968A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1 ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202180023726.5A 2020-04-02 2021-01-18 基板处理方法和基板处理装置 Pending CN115335968A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020066397 2020-04-02
JP2020-066397 2020-04-02
PCT/JP2021/001526 WO2021199585A1 (ja) 2020-04-02 2021-01-18 基板処理方法及び基板処理装置

Publications (1)

Publication Number Publication Date
CN115335968A true CN115335968A (zh) 2022-11-11

Family

ID=77929924

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180023726.5A Pending CN115335968A (zh) 2020-04-02 2021-01-18 基板处理方法和基板处理装置

Country Status (6)

Country Link
US (1) US12381085B2 (https=)
JP (2) JP7354420B2 (https=)
KR (1) KR102903522B1 (https=)
CN (1) CN115335968A (https=)
TW (1) TWI896595B (https=)
WO (1) WO2021199585A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI855139B (zh) * 2019-10-28 2024-09-11 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
JP7814972B2 (ja) * 2022-02-22 2026-02-17 東京エレクトロン株式会社 重合基板の処理方法及び基板処理システム
JP7742328B2 (ja) * 2022-03-25 2025-09-19 東京エレクトロン株式会社 処理方法及び処理システム
JP2024046238A (ja) * 2022-09-22 2024-04-03 株式会社ディスコ ウエーハの加工方法および加工装置
JPWO2024142947A1 (https=) * 2022-12-26 2024-07-04
WO2024247740A1 (ja) * 2023-05-30 2024-12-05 東京エレクトロン株式会社 基板処理方法及び基板処理システム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004200494A (ja) * 2002-12-19 2004-07-15 Dainippon Screen Mfg Co Ltd 薄膜除去装置および薄膜除去方法
CN1639869A (zh) * 2002-05-20 2005-07-13 三菱住友硅晶株式会社 粘合基片及其制造方法、以及其中使用的晶片外周加压用夹具类
CN107615445A (zh) * 2015-06-15 2018-01-19 信越半导体株式会社 绝缘体上硅晶圆的制造方法
WO2019176589A1 (ja) * 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012986A1 (ja) * 2018-07-12 2020-01-16 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001257139A (ja) * 2000-01-07 2001-09-21 Canon Inc 半導体基板とその作製方法
JP2006108532A (ja) 2004-10-08 2006-04-20 Disco Abrasive Syst Ltd ウエーハの研削方法
JP2006212646A (ja) 2005-02-01 2006-08-17 Canon Machinery Inc 周期構造作成方法
JP2006286727A (ja) * 2005-03-31 2006-10-19 Denso Corp 複数の半導体装置を備えた半導体ウェハおよびそのダイシング方法
KR102903523B1 (ko) * 2018-04-27 2025-12-23 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
KR102944322B1 (ko) 2018-07-19 2026-03-27 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법
JP7086201B2 (ja) * 2018-09-25 2022-06-17 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JP2021190439A (ja) * 2020-05-25 2021-12-13 東京エレクトロン株式会社 基板処理方法及び基板処理装置
TW202326839A (zh) * 2021-08-06 2023-07-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
KR20240073916A (ko) * 2021-09-30 2024-05-27 도쿄엘렉트론가부시키가이샤 처리 방법 및 처리 시스템
KR20250078974A (ko) * 2022-09-30 2025-06-04 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 시스템

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1639869A (zh) * 2002-05-20 2005-07-13 三菱住友硅晶株式会社 粘合基片及其制造方法、以及其中使用的晶片外周加压用夹具类
JP2004200494A (ja) * 2002-12-19 2004-07-15 Dainippon Screen Mfg Co Ltd 薄膜除去装置および薄膜除去方法
CN107615445A (zh) * 2015-06-15 2018-01-19 信越半导体株式会社 绝缘体上硅晶圆的制造方法
WO2019176589A1 (ja) * 2018-03-14 2019-09-19 東京エレクトロン株式会社 基板処理システム、基板処理方法及びコンピュータ記憶媒体
WO2020012986A1 (ja) * 2018-07-12 2020-01-16 東京エレクトロン株式会社 基板処理システム及び基板処理方法

Also Published As

Publication number Publication date
JP7354420B2 (ja) 2023-10-02
US20230178374A1 (en) 2023-06-08
TW202138096A (zh) 2021-10-16
KR102903522B1 (ko) 2025-12-23
US12381085B2 (en) 2025-08-05
JPWO2021199585A1 (https=) 2021-10-07
JP2023171405A (ja) 2023-12-01
KR20220156947A (ko) 2022-11-28
TWI896595B (zh) 2025-09-11
WO2021199585A1 (ja) 2021-10-07

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