KR102861965B1 - 높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅 - Google Patents

높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅

Info

Publication number
KR102861965B1
KR102861965B1 KR1020217007284A KR20217007284A KR102861965B1 KR 102861965 B1 KR102861965 B1 KR 102861965B1 KR 1020217007284 A KR1020217007284 A KR 1020217007284A KR 20217007284 A KR20217007284 A KR 20217007284A KR 102861965 B1 KR102861965 B1 KR 102861965B1
Authority
KR
South Korea
Prior art keywords
group
metal
coating
silicon
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217007284A
Other languages
English (en)
Korean (ko)
Other versions
KR20210042959A (ko
Inventor
토마스 가다
루옹 당 엔구옌
마르쿠스 라욱카넨
킴모 카라스테
주하 란타라
조나단 글렌
Original Assignee
피본드 오와이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 피본드 오와이 filed Critical 피본드 오와이
Publication of KR20210042959A publication Critical patent/KR20210042959A/ko
Application granted granted Critical
Publication of KR102861965B1 publication Critical patent/KR102861965B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/58—Metal-containing linkages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H01L21/3081—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)
KR1020217007284A 2018-08-10 2019-08-12 높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅 Active KR102861965B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20185677A FI129480B (en) 2018-08-10 2018-08-10 Silanol-containing organic-inorganic hybrid coatings for high resolution patterning
FI20185677 2018-08-10
PCT/FI2019/050584 WO2020030855A2 (en) 2018-08-10 2019-08-12 Silanol-containing organic-inorganic hybrid coatings for high resolution patterning

Publications (2)

Publication Number Publication Date
KR20210042959A KR20210042959A (ko) 2021-04-20
KR102861965B1 true KR102861965B1 (ko) 2025-09-19

Family

ID=67874467

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217007284A Active KR102861965B1 (ko) 2018-08-10 2019-08-12 높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅

Country Status (9)

Country Link
US (1) US12596304B2 (https=)
EP (1) EP3834041A2 (https=)
JP (2) JP7833764B2 (https=)
KR (1) KR102861965B1 (https=)
CN (1) CN113015940B (https=)
FI (1) FI129480B (https=)
SG (1) SG11202101348VA (https=)
TW (1) TWI845539B (https=)
WO (1) WO2020030855A2 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
JP7618601B2 (ja) 2019-06-28 2025-01-21 ラム リサーチ コーポレーション 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
US11669012B2 (en) * 2020-02-21 2023-06-06 Applied Materials, Inc. Maskless lithography method to fabricate topographic substrate
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
JP2023535349A (ja) * 2020-07-17 2023-08-17 ラム リサーチ コーポレーション 感光性ハイブリッド膜の形成方法
CN114063389B (zh) 2020-07-31 2026-04-07 华为技术有限公司 图案化材料和图案化薄膜
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
KR102521626B1 (ko) * 2021-12-20 2023-04-14 전남대학교산학협력단 주석 함유 실세스퀴옥산계 고분자 화합물 및 이를 포함하는 포토레지스트 조성물
EP4490575A1 (en) * 2022-03-10 2025-01-15 TotalEnergies One Tech Photoactivable hybrid organic-inorganic sol-gel resin for 3d printing
JP2023143802A (ja) * 2022-03-25 2023-10-06 信越化学工業株式会社 ケイ素含有メタルハードマスク形成用組成物及びパターン形成方法
KR102725782B1 (ko) 2022-07-01 2024-11-05 램 리써치 코포레이션 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상
CN115290677B (zh) * 2022-08-03 2023-08-22 广东聚德机械有限公司 一种基材的留白检测方法及涂布系统
KR102847264B1 (ko) * 2022-12-26 2025-08-18 전남대학교산학협력단 사이클로 실록산 기반의 고해상도 패터닝 조성물
KR102894992B1 (ko) * 2022-12-27 2025-12-10 전남대학교산학협력단 주석-사이클로 실록산 화합물 및 이를 포함하는 포토레지스트 조성물
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
KR20250034920A (ko) 2023-07-27 2025-03-11 램 리써치 코포레이션 금속-함유 포토레지스트에 대한 올-인-원 건식 현상
US20250062123A1 (en) * 2023-08-17 2025-02-20 Applied Materials, Inc. Treatments for thin films used in photolithography
FI20236200A1 (en) * 2023-10-27 2025-04-28 Pibond Oy Solution-processable organometallic complexes and their use
CN120122387B (zh) * 2025-05-15 2025-07-18 华东理工大学 一种分子层沉积制备的可擦除有机无机杂化图案化薄膜

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4310678A (en) 1980-12-02 1982-01-12 Dow Corning Corporation Liquid copolymeric organopolysiloxanes comprising SiO2 and method therefor
US4753855A (en) * 1986-12-04 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from metal oxides for protection of electronic devices
US5085893A (en) 1989-07-28 1992-02-04 Dow Corning Corporation Process for forming a coating on a substrate using a silsesquioxane resin
US4999397A (en) 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5010159A (en) * 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
US5238787A (en) 1991-04-22 1993-08-24 Dow Corning Corporation Photodelineable coatings from hydrogen silsesquioxane resin
JP3499032B2 (ja) * 1995-02-02 2004-02-23 ダウ コーニング アジア株式会社 放射線硬化性組成物、その硬化方法及びパターン形成方法
JP3529953B2 (ja) * 1996-09-03 2004-05-24 株式会社東芝 絶縁膜パターンの形成方法および感光性組成物
US5776235A (en) * 1996-10-04 1998-07-07 Dow Corning Corporation Thick opaque ceramic coatings
DE69806824T2 (de) * 1997-02-07 2003-02-27 Dow Corning Corp., Midland Verfahren zur Herstellung von Überzügen auf Elektronikteilen
US5707681A (en) 1997-02-07 1998-01-13 Dow Corning Corporation Method of producing coatings on electronic substrates
TWI299744B (en) * 2001-06-22 2008-08-11 Fuji Corp Phthalocyanine compound, ink, ink for ink-jet recording, ink-jet recording method and method for improving resistance of color-imaging material to ozone gas
US20040058090A1 (en) 2001-09-14 2004-03-25 Carlo Waldfried Low temperature UV pretreating of porous low-k materials
US7625687B2 (en) 2003-07-03 2009-12-01 Dow Corning Corporation Silsesquioxane resin
WO2006049720A1 (en) * 2004-11-02 2006-05-11 Dow Corning Corporation Resist composition
JP4553835B2 (ja) * 2005-12-14 2010-09-29 信越化学工業株式会社 反射防止膜材料、及びこれを用いたパターン形成方法、基板
JP5388331B2 (ja) * 2006-09-29 2014-01-15 旭化成イーマテリアルズ株式会社 ポリオルガノシロキサン組成物
JP5149512B2 (ja) 2007-02-02 2013-02-20 東レ・ダウコーニング株式会社 液状硬化性組成物、コーテイング方法、無機質基板および半導体装置
TWI434891B (zh) * 2007-02-22 2014-04-21 賽倫斯股份有限公司 積體電路用高矽含量矽氧烷聚合物
JP4793592B2 (ja) * 2007-11-22 2011-10-12 信越化学工業株式会社 金属酸化物含有膜形成用組成物、金属酸化物含有膜、金属酸化物含有膜形成基板及びこれを用いたパターン形成方法
KR101690159B1 (ko) * 2008-12-10 2016-12-27 다우 코닝 코포레이션 변환가능한 반사방지 코팅
EP2373722A4 (en) * 2008-12-10 2013-01-23 Dow Corning SILSESQUIOXAN RESINS
CN102439523B (zh) * 2009-07-23 2015-01-07 道康宁公司 用于双重图案化的方法和材料
US8163658B2 (en) * 2009-08-24 2012-04-24 International Business Machines Corporation Multiple patterning using improved patternable low-k dielectric materials
US9093279B2 (en) * 2011-07-20 2015-07-28 Nissan Chemical Industries, Ltd. Thin film forming composition for lithography containing titanium and silicon
EP2776511A1 (en) * 2011-11-08 2014-09-17 Dow Corning Corporation Organopolysiloxane compositions and surface modification of cured silicone elastomers
JP5842841B2 (ja) 2013-02-18 2016-01-13 信越化学工業株式会社 パターン形成方法
US9632411B2 (en) * 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
TWI490653B (zh) * 2013-09-10 2015-07-01 Chi Mei Corp 正型感光性樹脂組成物及其圖案形成方法
PL411195A1 (pl) 2015-02-11 2015-11-09 Uniwersytet Im. Adama Mickiewicza W Poznaniu (Dimetylowinylogermoksy) heptapodstawione silseskwioksany oraz sposób ich otrzymywania
US9899218B2 (en) * 2015-06-04 2018-02-20 Shin-Etsu Chemical Co., Ltd. Resist under layer film composition and patterning process
CN109415513B (zh) 2016-06-16 2022-02-25 美国陶氏有机硅公司 富含硅的倍半硅氧烷树脂
TW202238274A (zh) * 2020-11-27 2022-10-01 日商日產化學股份有限公司 含有矽之阻劑下層膜形成用組成物
EP4649356A1 (en) * 2023-02-13 2025-11-19 Brewer Science, Inc. Underlayer and methods for euv lithography

Also Published As

Publication number Publication date
FI20185677A1 (en) 2020-02-11
TW202018025A (zh) 2020-05-16
WO2020030855A2 (en) 2020-02-13
KR20210042959A (ko) 2021-04-20
US20210311394A1 (en) 2021-10-07
WO2020030855A3 (en) 2020-04-02
TWI845539B (zh) 2024-06-21
JP7833764B2 (ja) 2026-03-23
SG11202101348VA (en) 2021-03-30
JP2021534315A (ja) 2021-12-09
EP3834041A2 (en) 2021-06-16
JP2024099520A (ja) 2024-07-25
US12596304B2 (en) 2026-04-07
CN113015940A (zh) 2021-06-22
FI129480B (en) 2022-03-15
CN113015940B (zh) 2024-09-13

Similar Documents

Publication Publication Date Title
KR102861965B1 (ko) 높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅
JP7050137B2 (ja) ハードマスクおよび充填材料として安定な金属化合物、その組成物、およびその使用方法
TWI737870B (zh) 包含金屬氧化物奈米粒子及有機聚合物之旋轉塗佈材料組合物
KR101339763B1 (ko) 반사방지 하드 마스크 조성물
TWI531865B (zh) A multilayer photoresist process pattern forming method and an inorganic film forming composition for a multilayer photoresist process
JP4244315B2 (ja) レジストパターン形成用材料
KR102866234B1 (ko) 기능성 하이드로젠 실세스퀴옥세인 수지 및 그의 이용
KR20050044501A (ko) 포토리소그래피용 무반사 코팅 및 이의 제조 방법
TWI912089B (zh) 含矽之抗反射膜形成用組成物、及圖案形成方法
JP2025113920A (ja) 金属含有膜形成用組成物、パターン形成方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

F13 Ip right granted in full following pre-grant review

Free format text: ST27 STATUS EVENT CODE: A-3-4-F10-F13-REX-PX0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

F11 Ip right granted following substantive examination

Free format text: ST27 STATUS EVENT CODE: A-2-4-F10-F11-EXM-PR0701 (AS PROVIDED BY THE NATIONAL OFFICE)

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

U12 Designation fee paid

Free format text: ST27 STATUS EVENT CODE: A-2-2-U10-U12-OTH-PR1002 (AS PROVIDED BY THE NATIONAL OFFICE)

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

Q13 Ip right document published

Free format text: ST27 STATUS EVENT CODE: A-4-4-Q10-Q13-NAP-PG1601 (AS PROVIDED BY THE NATIONAL OFFICE)

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000