KR102859403B1 - 처리 장치 및 처리 방법 - Google Patents

처리 장치 및 처리 방법

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Publication number
KR102859403B1
KR102859403B1 KR1020227004429A KR20227004429A KR102859403B1 KR 102859403 B1 KR102859403 B1 KR 102859403B1 KR 1020227004429 A KR1020227004429 A KR 1020227004429A KR 20227004429 A KR20227004429 A KR 20227004429A KR 102859403 B1 KR102859403 B1 KR 102859403B1
Authority
KR
South Korea
Prior art keywords
processing
wafer
modified layer
unit
modification
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227004429A
Other languages
English (en)
Korean (ko)
Other versions
KR20220035418A (ko
Inventor
하야토 타노우에
요헤이 야마시타
요헤이 야마와키
히로토시 모리
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20220035418A publication Critical patent/KR20220035418A/ko
Application granted granted Critical
Publication of KR102859403B1 publication Critical patent/KR102859403B1/ko
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Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
    • B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
    • B23K26/0617—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis and with spots spaced along the common axis
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure
    • B23K26/1224—Working by laser beam, e.g. welding, cutting or boring in a special environment or atmosphere, e.g. in an enclosure in vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H01L21/304—
    • H01L21/67092—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020227004429A 2019-07-18 2020-07-09 처리 장치 및 처리 방법 Active KR102859403B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019133013 2019-07-18
JPJP-P-2019-133013 2019-07-18
PCT/JP2020/026884 WO2021010285A1 (ja) 2019-07-18 2020-07-09 処理装置及び処理方法

Publications (2)

Publication Number Publication Date
KR20220035418A KR20220035418A (ko) 2022-03-22
KR102859403B1 true KR102859403B1 (ko) 2025-09-12

Family

ID=74210799

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227004429A Active KR102859403B1 (ko) 2019-07-18 2020-07-09 처리 장치 및 처리 방법

Country Status (6)

Country Link
US (1) US11969827B2 (https=)
JP (1) JP7133715B2 (https=)
KR (1) KR102859403B1 (https=)
CN (1) CN114096374B (https=)
TW (1) TWI860382B (https=)
WO (1) WO2021010285A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI877184B (zh) * 2019-07-18 2025-03-21 日商東京威力科創股份有限公司 處理裝置及處理方法
TWI855139B (zh) * 2019-10-28 2024-09-11 日商東京威力科創股份有限公司 基板處理方法及基板處理系統
JP2024035984A (ja) * 2022-09-05 2024-03-15 株式会社ディスコ ウエーハの加工方法
JP2024039367A (ja) * 2022-09-09 2024-03-22 株式会社ディスコ ウエーハの加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053341A (ja) 2006-08-23 2008-03-06 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010247189A (ja) 2009-04-16 2010-11-04 Shin Etsu Polymer Co Ltd 半導体ウェーハの製造方法及びその装置
JP2014082296A (ja) 2012-10-16 2014-05-08 Disco Abrasive Syst Ltd 加工方法
JP2018043340A (ja) 2016-09-15 2018-03-22 株式会社荏原製作所 基板加工方法および基板加工装置

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JP3762212B2 (ja) * 2000-10-27 2006-04-05 ユキワ精工株式会社 工具保持体の偏心修正装置
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4907984B2 (ja) * 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
JP5183892B2 (ja) * 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
JP5060762B2 (ja) 2006-10-19 2012-10-31 株式会社ディスコ レーザー加工装置
JP4900128B2 (ja) * 2007-08-07 2012-03-21 日本電気株式会社 半導体薄膜改質方法
JP5443102B2 (ja) * 2009-09-01 2014-03-19 株式会社ディスコ レーザー加工装置
JP5670765B2 (ja) 2011-01-13 2015-02-18 浜松ホトニクス株式会社 レーザ加工方法
CN103619533B (zh) * 2011-02-15 2016-08-17 毫微光电子影像公司 连续扫描xy平移台
JP5717614B2 (ja) * 2011-12-08 2015-05-13 東京エレクトロン株式会社 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP6044919B2 (ja) 2012-02-01 2016-12-14 信越ポリマー株式会社 基板加工方法
TWI610374B (zh) * 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
WO2015023984A1 (en) * 2013-08-16 2015-02-19 Electro Scientific Industries, Inc. Laser systems and methods for internally marking thin layers, and articles produced thereby
JP2015074003A (ja) * 2013-10-07 2015-04-20 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
JP6516184B2 (ja) * 2015-05-19 2019-05-22 パナソニックＩｐマネジメント株式会社 脆性基板のスライス装置及び方法
JP7032050B2 (ja) * 2017-03-14 2022-03-08 株式会社ディスコ レーザー加工装置
JP6844901B2 (ja) * 2017-05-26 2021-03-17 株式会社ディスコ レーザ加工装置及びレーザ加工方法
DE112019005453T5 (de) * 2018-10-30 2021-08-12 Hamamatsu Photonics K.K. Laserbearbeitungsvorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053341A (ja) 2006-08-23 2008-03-06 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2010247189A (ja) 2009-04-16 2010-11-04 Shin Etsu Polymer Co Ltd 半導体ウェーハの製造方法及びその装置
JP2014082296A (ja) 2012-10-16 2014-05-08 Disco Abrasive Syst Ltd 加工方法
JP2018043340A (ja) 2016-09-15 2018-03-22 株式会社荏原製作所 基板加工方法および基板加工装置

Also Published As

Publication number Publication date
CN114096374A (zh) 2022-02-25
CN114096374B (zh) 2024-04-09
TWI860382B (zh) 2024-11-01
WO2021010285A1 (ja) 2021-01-21
US20220250190A1 (en) 2022-08-11
TW202115783A (zh) 2021-04-16
US11969827B2 (en) 2024-04-30
JP7133715B2 (ja) 2022-09-08
JPWO2021010285A1 (https=) 2021-01-21
KR20220035418A (ko) 2022-03-22

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