KR102849678B1 - 도포형 무기 투명 산화물 반도체 전자수송층을 갖는 역구조 전계발광소자 - Google Patents

도포형 무기 투명 산화물 반도체 전자수송층을 갖는 역구조 전계발광소자

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Publication number
KR102849678B1
KR102849678B1 KR1020227042390A KR20227042390A KR102849678B1 KR 102849678 B1 KR102849678 B1 KR 102849678B1 KR 1020227042390 A KR1020227042390 A KR 1020227042390A KR 20227042390 A KR20227042390 A KR 20227042390A KR 102849678 B1 KR102849678 B1 KR 102849678B1
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electrode
electron transport
transport layer
layer
light
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KR20230005362A (ko
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사카에 타나카
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미쿠니 일렉트론 코포레이션
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/166—Electron transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
KR1020227042390A 2020-06-23 2021-06-22 도포형 무기 투명 산화물 반도체 전자수송층을 갖는 역구조 전계발광소자 Active KR102849678B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257027377A KR20250133442A (ko) 2020-06-23 2021-06-22 도포형 무기 투명 산화물 반도체 전자수송층을 갖는 역구조 전계발광소자

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020107890 2020-06-23
JPJP-P-2020-107890 2020-06-23
PCT/JP2021/023638 WO2021261493A1 (ja) 2020-06-23 2021-06-22 塗布型無機透明酸化物半導体電子輸送層を有する逆構造エレクトロルミネセンス素子

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KR1020257027377A Division KR20250133442A (ko) 2020-06-23 2021-06-22 도포형 무기 투명 산화물 반도체 전자수송층을 갖는 역구조 전계발광소자

Publications (2)

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KR20230005362A KR20230005362A (ko) 2023-01-09
KR102849678B1 true KR102849678B1 (ko) 2025-08-22

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KR1020227042390A Active KR102849678B1 (ko) 2020-06-23 2021-06-22 도포형 무기 투명 산화물 반도체 전자수송층을 갖는 역구조 전계발광소자
KR1020257027377A Pending KR20250133442A (ko) 2020-06-23 2021-06-22 도포형 무기 투명 산화물 반도체 전자수송층을 갖는 역구조 전계발광소자

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Country Status (6)

Country Link
US (1) US20230146966A1 (https=)
EP (1) EP4170722A4 (https=)
JP (1) JP7410596B2 (https=)
KR (2) KR102849678B1 (https=)
CN (1) CN115868247A (https=)
WO (1) WO2021261493A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022176736A1 (ja) * 2021-02-18 2022-08-25 株式会社ジャパンディスプレイ 表示装置
CN115249775B (zh) * 2021-04-26 2025-11-04 Tcl科技集团股份有限公司 发光器件及其制作方法、显示面板
US20230023178A1 (en) * 2021-07-22 2023-01-26 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and mobile terminal
CN114695667B (zh) * 2022-03-22 2023-04-07 电子科技大学 一种埋底界面处理制备高效柔性钙钛矿太阳电池的方法
CN117374056A (zh) * 2022-06-30 2024-01-09 深超光电（深圳）有限公司 显示面板及显示面板制造方法
KR20240141891A (ko) * 2023-03-20 2024-09-30 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치

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JP2016213052A (ja) * 2015-05-08 2016-12-15 株式会社Ｊｏｌｅｄ 青色有機ｅｌ素子、有機ｅｌ表示パネル及び青色有機ｅｌ素子の製造方法
JP2017057288A (ja) * 2015-09-17 2017-03-23 日立化成株式会社 組成物、電荷輸送材料、及びインク並びにそれらの利用
JP2018133144A (ja) * 2017-02-13 2018-08-23 株式会社Ｊｏｌｅｄ 有機電界発光パネルおよび発光装置
JP2020035942A (ja) * 2018-08-31 2020-03-05 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子

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JP4048687B2 (ja) 2000-04-07 2008-02-20 セイコーエプソン株式会社 有機ｅｌ素子および有機ｅｌ素子の製造方法
JP2002343578A (ja) 2001-05-10 2002-11-29 Nec Corp 発光体、発光素子、および発光表示装置
TW200721478A (en) 2005-10-14 2007-06-01 Pioneer Corp Light-emitting element and display apparatus using the same
JP4808479B2 (ja) 2005-11-28 2011-11-02 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP4809670B2 (ja) 2005-12-02 2011-11-09 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP2008084655A (ja) 2006-09-27 2008-04-10 Toppan Printing Co Ltd 高分子系有機ｅｌ素子の発光層の形成方法
JP2011014347A (ja) * 2009-07-01 2011-01-20 Casio Computer Co Ltd 発光装置及び発光装置の製造方法
KR101310058B1 (ko) * 2011-10-06 2013-09-24 전남대학교산학협력단 역구조 유기 태양전지 및 그 제조방법
JP2015124117A (ja) * 2013-12-26 2015-07-06 東ソー・ファインケム株式会社 金属酸化物薄膜の製造方法
JP6844845B2 (ja) * 2017-05-31 2021-03-17 三国電子有限会社 表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016213052A (ja) * 2015-05-08 2016-12-15 株式会社Ｊｏｌｅｄ 青色有機ｅｌ素子、有機ｅｌ表示パネル及び青色有機ｅｌ素子の製造方法
JP2017057288A (ja) * 2015-09-17 2017-03-23 日立化成株式会社 組成物、電荷輸送材料、及びインク並びにそれらの利用
JP2018133144A (ja) * 2017-02-13 2018-08-23 株式会社Ｊｏｌｅｄ 有機電界発光パネルおよび発光装置
JP2020035942A (ja) * 2018-08-31 2020-03-05 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子

Also Published As

Publication number Publication date
US20230146966A1 (en) 2023-05-11
CN115868247A (zh) 2023-03-28
KR20250133442A (ko) 2025-09-05
JP7410596B2 (ja) 2024-01-10
KR20230005362A (ko) 2023-01-09
JPWO2021261493A1 (https=) 2021-12-30
EP4170722A4 (en) 2023-10-04
WO2021261493A1 (ja) 2021-12-30
EP4170722A1 (en) 2023-04-26

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