CN115868247A - 具有涂覆型无机透明氧化物半导体电子传输层的反向结构电致发光元件 - Google Patents

具有涂覆型无机透明氧化物半导体电子传输层的反向结构电致发光元件 Download PDF

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Publication number
CN115868247A
CN115868247A CN202180044882.XA CN202180044882A CN115868247A CN 115868247 A CN115868247 A CN 115868247A CN 202180044882 A CN202180044882 A CN 202180044882A CN 115868247 A CN115868247 A CN 115868247A
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electrode
electron transport
layer
transport layer
insulating layer
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Chinese (zh)
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田中荣
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Mikuni Electron Co Ltd
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Mikuni Electron Co Ltd
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/00—Organic light-emitting devices
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    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
CN202180044882.XA 2020-06-23 2021-06-22 具有涂覆型无机透明氧化物半导体电子传输层的反向结构电致发光元件 Pending CN115868247A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020107890 2020-06-23
JP2020-107890 2020-06-23
PCT/JP2021/023638 WO2021261493A1 (ja) 2020-06-23 2021-06-22 塗布型無機透明酸化物半導体電子輸送層を有する逆構造エレクトロルミネセンス素子

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CN115868247A true CN115868247A (zh) 2023-03-28

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US (1) US20230146966A1 (https=)
EP (1) EP4170722A4 (https=)
JP (1) JP7410596B2 (https=)
KR (2) KR102849678B1 (https=)
CN (1) CN115868247A (https=)
WO (1) WO2021261493A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240006571A1 (en) * 2022-06-30 2024-01-04 Century Technology (Shenzhen) Corporation Limited Display panel, and fabrication method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022176736A1 (ja) * 2021-02-18 2022-08-25 株式会社ジャパンディスプレイ 表示装置
CN115249775B (zh) * 2021-04-26 2025-11-04 Tcl科技集团股份有限公司 发光器件及其制作方法、显示面板
US20230023178A1 (en) * 2021-07-22 2023-01-26 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and mobile terminal
CN114695667B (zh) * 2022-03-22 2023-04-07 电子科技大学 一种埋底界面处理制备高效柔性钙钛矿太阳电池的方法
KR20240141891A (ko) * 2023-03-20 2024-09-30 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치

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JP2011014347A (ja) * 2009-07-01 2011-01-20 Casio Computer Co Ltd 発光装置及び発光装置の製造方法
JP2015124117A (ja) * 2013-12-26 2015-07-06 東ソー・ファインケム株式会社 金属酸化物薄膜の製造方法
JP2016213052A (ja) * 2015-05-08 2016-12-15 株式会社Ｊｏｌｅｄ 青色有機ｅｌ素子、有機ｅｌ表示パネル及び青色有機ｅｌ素子の製造方法
JP2017057288A (ja) * 2015-09-17 2017-03-23 日立化成株式会社 組成物、電荷輸送材料、及びインク並びにそれらの利用
CN110875437A (zh) * 2018-08-31 2020-03-10 三国电子有限会社 具有载流子注入量控制电极的有机电致发光元件

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JP4048687B2 (ja) 2000-04-07 2008-02-20 セイコーエプソン株式会社 有機ｅｌ素子および有機ｅｌ素子の製造方法
JP2002343578A (ja) 2001-05-10 2002-11-29 Nec Corp 発光体、発光素子、および発光表示装置
TW200721478A (en) 2005-10-14 2007-06-01 Pioneer Corp Light-emitting element and display apparatus using the same
JP4808479B2 (ja) 2005-11-28 2011-11-02 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP4809670B2 (ja) 2005-12-02 2011-11-09 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP2008084655A (ja) 2006-09-27 2008-04-10 Toppan Printing Co Ltd 高分子系有機ｅｌ素子の発光層の形成方法
KR101310058B1 (ko) * 2011-10-06 2013-09-24 전남대학교산학협력단 역구조 유기 태양전지 및 그 제조방법
JP2018133144A (ja) * 2017-02-13 2018-08-23 株式会社Ｊｏｌｅｄ 有機電界発光パネルおよび発光装置
JP6844845B2 (ja) * 2017-05-31 2021-03-17 三国電子有限会社 表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011014347A (ja) * 2009-07-01 2011-01-20 Casio Computer Co Ltd 発光装置及び発光装置の製造方法
JP2015124117A (ja) * 2013-12-26 2015-07-06 東ソー・ファインケム株式会社 金属酸化物薄膜の製造方法
JP2016213052A (ja) * 2015-05-08 2016-12-15 株式会社Ｊｏｌｅｄ 青色有機ｅｌ素子、有機ｅｌ表示パネル及び青色有機ｅｌ素子の製造方法
JP2017057288A (ja) * 2015-09-17 2017-03-23 日立化成株式会社 組成物、電荷輸送材料、及びインク並びにそれらの利用
CN110875437A (zh) * 2018-08-31 2020-03-10 三国电子有限会社 具有载流子注入量控制电极的有机电致发光元件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240006571A1 (en) * 2022-06-30 2024-01-04 Century Technology (Shenzhen) Corporation Limited Display panel, and fabrication method

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US20230146966A1 (en) 2023-05-11
KR20250133442A (ko) 2025-09-05
JP7410596B2 (ja) 2024-01-10
KR20230005362A (ko) 2023-01-09
JPWO2021261493A1 (https=) 2021-12-30
EP4170722A4 (en) 2023-10-04
KR102849678B1 (ko) 2025-08-22
WO2021261493A1 (ja) 2021-12-30
EP4170722A1 (en) 2023-04-26

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