JP7410596B2 - エレクトロルミネセンス素子の製造方法、エレクトロルミネセンス素子、および表示装置 - Google Patents

エレクトロルミネセンス素子の製造方法、エレクトロルミネセンス素子、および表示装置 Download PDF

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JP7410596B2
JP7410596B2 JP2022532499A JP2022532499A JP7410596B2 JP 7410596 B2 JP7410596 B2 JP 7410596B2 JP 2022532499 A JP2022532499 A JP 2022532499A JP 2022532499 A JP2022532499 A JP 2022532499A JP 7410596 B2 JP7410596 B2 JP 7410596B2
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electrode
electron transport
transport layer
layer
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JPWO2021261493A5 (ja
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栄 田中
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Mikuni Electron Co Ltd
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Mikuni Electron Co Ltd
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    • H—ELECTRICITY
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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    • H10K50/00—Organic light-emitting devices
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Chemical & Material Sciences (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
JP2022532499A 2020-06-23 2021-06-22 エレクトロルミネセンス素子の製造方法、エレクトロルミネセンス素子、および表示装置 Active JP7410596B2 (ja)

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JP2020107890 2020-06-23
JP2020107890 2020-06-23
PCT/JP2021/023638 WO2021261493A1 (ja) 2020-06-23 2021-06-22 塗布型無機透明酸化物半導体電子輸送層を有する逆構造エレクトロルミネセンス素子

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JPWO2021261493A5 JPWO2021261493A5 (ja) 2023-03-03
JP7410596B2 true JP7410596B2 (ja) 2024-01-10

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US (1) US20230146966A1 (https=)
EP (1) EP4170722A4 (https=)
JP (1) JP7410596B2 (https=)
KR (2) KR102849678B1 (https=)
CN (1) CN115868247A (https=)
WO (1) WO2021261493A1 (https=)

Families Citing this family (6)

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Publication number Priority date Publication date Assignee Title
WO2022176736A1 (ja) * 2021-02-18 2022-08-25 株式会社ジャパンディスプレイ 表示装置
CN115249775B (zh) * 2021-04-26 2025-11-04 Tcl科技集团股份有限公司 发光器件及其制作方法、显示面板
US20230023178A1 (en) * 2021-07-22 2023-01-26 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Display panel and mobile terminal
CN114695667B (zh) * 2022-03-22 2023-04-07 电子科技大学 一种埋底界面处理制备高效柔性钙钛矿太阳电池的方法
CN117374056A (zh) * 2022-06-30 2024-01-09 深超光电（深圳）有限公司 显示面板及显示面板制造方法
KR20240141891A (ko) * 2023-03-20 2024-09-30 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치

Citations (6)

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Publication number Priority date Publication date Assignee Title
JP2001291583A (ja) 2000-04-07 2001-10-19 Seiko Epson Corp 有機ｅｌ素子および有機ｅｌ素子の製造方法
JP2008084655A (ja) 2006-09-27 2008-04-10 Toppan Printing Co Ltd 高分子系有機ｅｌ素子の発光層の形成方法
JP2016213052A (ja) 2015-05-08 2016-12-15 株式会社Ｊｏｌｅｄ 青色有機ｅｌ素子、有機ｅｌ表示パネル及び青色有機ｅｌ素子の製造方法
JP2017057288A (ja) 2015-09-17 2017-03-23 日立化成株式会社 組成物、電荷輸送材料、及びインク並びにそれらの利用
JP2018206822A (ja) 2017-05-31 2018-12-27 三国電子有限会社 表示装置
JP2020035942A (ja) 2018-08-31 2020-03-05 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子

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JP2002343578A (ja) 2001-05-10 2002-11-29 Nec Corp 発光体、発光素子、および発光表示装置
TW200721478A (en) 2005-10-14 2007-06-01 Pioneer Corp Light-emitting element and display apparatus using the same
JP4808479B2 (ja) 2005-11-28 2011-11-02 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP4809670B2 (ja) 2005-12-02 2011-11-09 大日本印刷株式会社 有機発光トランジスタ素子及びその製造方法並びに発光表示装置
JP2011014347A (ja) * 2009-07-01 2011-01-20 Casio Computer Co Ltd 発光装置及び発光装置の製造方法
KR101310058B1 (ko) * 2011-10-06 2013-09-24 전남대학교산학협력단 역구조 유기 태양전지 및 그 제조방법
JP2015124117A (ja) * 2013-12-26 2015-07-06 東ソー・ファインケム株式会社 金属酸化物薄膜の製造方法
JP2018133144A (ja) * 2017-02-13 2018-08-23 株式会社Ｊｏｌｅｄ 有機電界発光パネルおよび発光装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291583A (ja) 2000-04-07 2001-10-19 Seiko Epson Corp 有機ｅｌ素子および有機ｅｌ素子の製造方法
JP2008084655A (ja) 2006-09-27 2008-04-10 Toppan Printing Co Ltd 高分子系有機ｅｌ素子の発光層の形成方法
JP2016213052A (ja) 2015-05-08 2016-12-15 株式会社Ｊｏｌｅｄ 青色有機ｅｌ素子、有機ｅｌ表示パネル及び青色有機ｅｌ素子の製造方法
JP2017057288A (ja) 2015-09-17 2017-03-23 日立化成株式会社 組成物、電荷輸送材料、及びインク並びにそれらの利用
JP2018206822A (ja) 2017-05-31 2018-12-27 三国電子有限会社 表示装置
JP2020035942A (ja) 2018-08-31 2020-03-05 三国電子有限会社 キャリア注入量制御電極を有する有機エレクトロルミネセンス素子

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US20230146966A1 (en) 2023-05-11
CN115868247A (zh) 2023-03-28
KR20250133442A (ko) 2025-09-05
KR20230005362A (ko) 2023-01-09
JPWO2021261493A1 (https=) 2021-12-30
EP4170722A4 (en) 2023-10-04
KR102849678B1 (ko) 2025-08-22
WO2021261493A1 (ja) 2021-12-30
EP4170722A1 (en) 2023-04-26

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