KR102827418B1 - 층상 구조를 갖는 전기 기계 변환기 - Google Patents

층상 구조를 갖는 전기 기계 변환기 Download PDF

Info

Publication number
KR102827418B1
KR102827418B1 KR1020217017118A KR20217017118A KR102827418B1 KR 102827418 B1 KR102827418 B1 KR 102827418B1 KR 1020217017118 A KR1020217017118 A KR 1020217017118A KR 20217017118 A KR20217017118 A KR 20217017118A KR 102827418 B1 KR102827418 B1 KR 102827418B1
Authority
KR
South Korea
Prior art keywords
layer
electromechanical converter
layered structure
electrically conductive
acts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217017118A
Other languages
English (en)
Korean (ko)
Other versions
KR20210084623A (ko
Inventor
라이노 페트리세빅
Original Assignee
아이앤디택트 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아이앤디택트 게엠베하 filed Critical 아이앤디택트 게엠베하
Publication of KR20210084623A publication Critical patent/KR20210084623A/ko
Application granted granted Critical
Publication of KR102827418B1 publication Critical patent/KR102827418B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H04R17/025—Microphones using a piezoelectric polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Measuring Fluid Pressure (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Micromachines (AREA)
  • Testing Or Calibration Of Command Recording Devices (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Pressure Sensors (AREA)
KR1020217017118A 2018-11-06 2019-11-04 층상 구조를 갖는 전기 기계 변환기 Active KR102827418B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018127651.6A DE102018127651A1 (de) 2018-11-06 2018-11-06 Elektromechanischer Wandler mit einem Schichtaufbau
DE102018127651.6 2018-11-06
PCT/EP2019/080081 WO2020094559A1 (de) 2018-11-06 2019-11-04 Elektromechanischer wandler mit einem schichtaufbau

Publications (2)

Publication Number Publication Date
KR20210084623A KR20210084623A (ko) 2021-07-07
KR102827418B1 true KR102827418B1 (ko) 2025-07-01

Family

ID=68468725

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217017118A Active KR102827418B1 (ko) 2018-11-06 2019-11-04 층상 구조를 갖는 전기 기계 변환기

Country Status (7)

Country Link
US (1) US12137615B2 (https=)
EP (1) EP3853915B1 (https=)
JP (2) JP2022506331A (https=)
KR (1) KR102827418B1 (https=)
CN (1) CN113039656B (https=)
DE (1) DE102018127651A1 (https=)
WO (1) WO2020094559A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020107028B4 (de) 2020-03-13 2022-12-29 Technische Universität Chemnitz Piezoelektrische Vorrichtung und Verfahren zu deren Herstellung
JP2025037302A (ja) * 2023-09-06 2025-03-18 株式会社村田製作所 電子機器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003346556A (ja) * 2002-05-24 2003-12-05 Sumitomo Electric Ind Ltd 異方導電材料
JP2008135886A (ja) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd Ｂａｗ共振器の製造方法
JP2013048233A (ja) * 2011-08-17 2013-03-07 Boeing Co:The Ｐｚｔナノ粒子インクベースの圧電センサを製作する方法およびシステム
JP2014170863A (ja) * 2013-03-05 2014-09-18 Sekisui Chem Co Ltd 圧電センサの製造方法
CN104881193A (zh) * 2015-06-02 2015-09-02 南昌欧菲光科技有限公司 触控显示装置、压力触控单元及其制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1114478A (ja) * 1997-06-26 1999-01-22 Matsushita Electric Ind Co Ltd 圧力検出装置
GB2375175A (en) 2001-05-03 2002-11-06 Electro Mechanical Assembly Lt Peizoelectric device for detecting or measuring the bending of objects
DE10136402C2 (de) * 2001-07-26 2003-07-31 Fraunhofer Ges Forschung Physikalisch aktives Pflaster und Verfahren zur Herstellung
JP4617078B2 (ja) * 2003-12-08 2011-01-19 北陸電気工業株式会社 積層圧電体及び圧電型振動素子
US20080202664A1 (en) * 2007-02-27 2008-08-28 Iptrade, Inc. Method of manufacturing a piezoelectric package having a composite structure
US7858440B2 (en) * 2007-09-21 2010-12-28 Infineon Technologies Ag Stacked semiconductor chips
EP2144290A1 (en) 2008-07-08 2010-01-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Electronic device and method of manufacturing the same
US7656076B1 (en) * 2008-07-15 2010-02-02 Iptrade, Inc. Unimorph/bimorph piezoelectric package
DE102010013565A1 (de) 2010-03-30 2012-01-19 Fludicon Gmbh Elektromechanischer Wandler und Verfahren zur Herstellung des elektromechanischen Wandlers
DE102010041129A1 (de) * 2010-09-21 2012-03-22 Robert Bosch Gmbh Multifunktionssensor als PoP-mWLP
DE102011086042A1 (de) * 2011-11-09 2013-05-16 Johnson Matthey Catalysts (Germany) Gmbh Biegewandler sowie Mikropumpe mit einem Biegewandler
JP2014169945A (ja) * 2013-03-04 2014-09-18 Sekisui Chem Co Ltd 圧電センサ
WO2015041049A1 (ja) 2013-09-20 2015-03-26 株式会社村田製作所 圧電センサ
DE102016214607B4 (de) * 2016-08-05 2023-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektronisches Modul und Verfahren zu seiner Herstellung
JP6764759B2 (ja) * 2016-10-28 2020-10-07 日本特殊陶業株式会社 圧電アクチュエータ
JP2017034290A (ja) * 2016-11-16 2017-02-09 タツタ電線株式会社 圧電フィルム積層体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003346556A (ja) * 2002-05-24 2003-12-05 Sumitomo Electric Ind Ltd 異方導電材料
JP2008135886A (ja) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd Ｂａｗ共振器の製造方法
JP2013048233A (ja) * 2011-08-17 2013-03-07 Boeing Co:The Ｐｚｔナノ粒子インクベースの圧電センサを製作する方法およびシステム
JP2014170863A (ja) * 2013-03-05 2014-09-18 Sekisui Chem Co Ltd 圧電センサの製造方法
CN104881193A (zh) * 2015-06-02 2015-09-02 南昌欧菲光科技有限公司 触控显示装置、压力触控单元及其制作方法

Also Published As

Publication number Publication date
EP3853915B1 (de) 2022-11-30
WO2020094559A1 (de) 2020-05-14
CN113039656A (zh) 2021-06-25
JP2022506331A (ja) 2022-01-17
US12137615B2 (en) 2024-11-05
KR20210084623A (ko) 2021-07-07
CN113039656B (zh) 2025-02-07
DE102018127651A1 (de) 2020-05-07
US20210343926A1 (en) 2021-11-04
BR112021007772A2 (pt) 2021-07-27
EP3853915A1 (de) 2021-07-28
JP2024153687A (ja) 2024-10-29

Similar Documents

Publication Publication Date Title
JP2024153687A (ja) 層状構造の電気機械変換器
JP2020503606A5 (https=)
JP5743040B2 (ja) フレキシブル回路基板、および、フレキシブル回路基板の製造方法
US20130002095A1 (en) Bending transducer
CN106461486B (zh) 压电传感器及压电元件
KR20070104194A (ko) 센서 장치
KR101696631B1 (ko) 타이어 패치 내 압전 디바이스를 위한 하나는 위, 하나는 아래 접속 구조
US11662262B2 (en) Sensor unit and method of interconnecting a substrate and a carrier
CN211296528U (zh) 致动器
JP4929858B2 (ja) センサ装置
JP2022506331A5 (https=)
JP4111158B2 (ja) 圧力センサ
JP5439683B2 (ja) ３ｄ電子モジュール
JP2017051277A5 (https=)
JP2013186108A5 (https=)
BR112021007772B1 (pt) Transdutor eletromecânico, e método de fabricação de transdutores eletromecânicos
JPWO2020094559A5 (https=)
WO2006082745A1 (ja) 接続部品、積層基板
CN121612458A (zh) 柔性压力传感器、柔性压力传感器的制备方法及其应用
CN121498898A (zh) 传感器设备和用于生产传感器设备的方法
CN206260156U (zh) 部件内置基板
JP6658104B2 (ja) 回路装置
TW202341084A (zh) 指紋識別裝置和指紋識別裝置的製造方法
CN102110679A (zh) 具有三维表面轮廓的衬底的功率半导体模块及其制造方法
HK1117328A (en) Connection component, multilayer substrate

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20210603

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20220805

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20240503

Patent event code: PE09021S01D

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20250227

Patent event code: PE09021S02D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20250509

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20250626

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20250627

End annual number: 3

Start annual number: 1

PG1601 Publication of registration