CN113039656B - 具有层结构的机电换能器 - Google Patents

具有层结构的机电换能器 Download PDF

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Publication number
CN113039656B
CN113039656B CN201980069501.6A CN201980069501A CN113039656B CN 113039656 B CN113039656 B CN 113039656B CN 201980069501 A CN201980069501 A CN 201980069501A CN 113039656 B CN113039656 B CN 113039656B
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China
Prior art keywords
layer
electromechanical transducer
electromechanical
transducer according
sensor
Prior art date
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Application number
CN201980069501.6A
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English (en)
Chinese (zh)
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CN113039656A (zh
Inventor
瑞诺·彼得里切维奇
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Indtact GmbH
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Indtact GmbH
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Publication of CN113039656A publication Critical patent/CN113039656A/zh
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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones
    • H04R17/025—Microphones using a piezoelectric polymer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/02—Forming enclosures or casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Measuring Fluid Pressure (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Micromachines (AREA)
  • Testing Or Calibration Of Command Recording Devices (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Pressure Sensors (AREA)
CN201980069501.6A 2018-11-06 2019-11-04 具有层结构的机电换能器 Active CN113039656B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018127651.6A DE102018127651A1 (de) 2018-11-06 2018-11-06 Elektromechanischer Wandler mit einem Schichtaufbau
DE102018127651.6 2018-11-06
PCT/EP2019/080081 WO2020094559A1 (de) 2018-11-06 2019-11-04 Elektromechanischer wandler mit einem schichtaufbau

Publications (2)

Publication Number Publication Date
CN113039656A CN113039656A (zh) 2021-06-25
CN113039656B true CN113039656B (zh) 2025-02-07

Family

ID=68468725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980069501.6A Active CN113039656B (zh) 2018-11-06 2019-11-04 具有层结构的机电换能器

Country Status (7)

Country Link
US (1) US12137615B2 (https=)
EP (1) EP3853915B1 (https=)
JP (2) JP2022506331A (https=)
KR (1) KR102827418B1 (https=)
CN (1) CN113039656B (https=)
DE (1) DE102018127651A1 (https=)
WO (1) WO2020094559A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020107028B4 (de) 2020-03-13 2022-12-29 Technische Universität Chemnitz Piezoelektrische Vorrichtung und Verfahren zu deren Herstellung
JP2025037302A (ja) * 2023-09-06 2025-03-18 株式会社村田製作所 電子機器

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1114478A (ja) * 1997-06-26 1999-01-22 Matsushita Electric Ind Co Ltd 圧力検出装置
JP2003346556A (ja) * 2002-05-24 2003-12-05 Sumitomo Electric Ind Ltd 異方導電材料
JP2008135886A (ja) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd Ｂａｗ共振器の製造方法
CN103098201A (zh) * 2010-09-21 2013-05-08 罗伯特·博世有限公司 作为POP-mWLP的多功能传感器
JP2014170863A (ja) * 2013-03-05 2014-09-18 Sekisui Chem Co Ltd 圧電センサの製造方法
CN104881193A (zh) * 2015-06-02 2015-09-02 南昌欧菲光科技有限公司 触控显示装置、压力触控单元及其制作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2375175A (en) 2001-05-03 2002-11-06 Electro Mechanical Assembly Lt Peizoelectric device for detecting or measuring the bending of objects
DE10136402C2 (de) * 2001-07-26 2003-07-31 Fraunhofer Ges Forschung Physikalisch aktives Pflaster und Verfahren zur Herstellung
JP4617078B2 (ja) * 2003-12-08 2011-01-19 北陸電気工業株式会社 積層圧電体及び圧電型振動素子
US20080202664A1 (en) * 2007-02-27 2008-08-28 Iptrade, Inc. Method of manufacturing a piezoelectric package having a composite structure
US7858440B2 (en) * 2007-09-21 2010-12-28 Infineon Technologies Ag Stacked semiconductor chips
EP2144290A1 (en) 2008-07-08 2010-01-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Electronic device and method of manufacturing the same
US7656076B1 (en) * 2008-07-15 2010-02-02 Iptrade, Inc. Unimorph/bimorph piezoelectric package
DE102010013565A1 (de) 2010-03-30 2012-01-19 Fludicon Gmbh Elektromechanischer Wandler und Verfahren zur Herstellung des elektromechanischen Wandlers
US8614724B2 (en) * 2011-08-17 2013-12-24 The Boeing Company Method and system of fabricating PZT nanoparticle ink based piezoelectric sensor
DE102011086042A1 (de) * 2011-11-09 2013-05-16 Johnson Matthey Catalysts (Germany) Gmbh Biegewandler sowie Mikropumpe mit einem Biegewandler
JP2014169945A (ja) * 2013-03-04 2014-09-18 Sekisui Chem Co Ltd 圧電センサ
WO2015041049A1 (ja) 2013-09-20 2015-03-26 株式会社村田製作所 圧電センサ
DE102016214607B4 (de) * 2016-08-05 2023-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektronisches Modul und Verfahren zu seiner Herstellung
JP6764759B2 (ja) * 2016-10-28 2020-10-07 日本特殊陶業株式会社 圧電アクチュエータ
JP2017034290A (ja) * 2016-11-16 2017-02-09 タツタ電線株式会社 圧電フィルム積層体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1114478A (ja) * 1997-06-26 1999-01-22 Matsushita Electric Ind Co Ltd 圧力検出装置
JP2003346556A (ja) * 2002-05-24 2003-12-05 Sumitomo Electric Ind Ltd 異方導電材料
JP2008135886A (ja) * 2006-11-27 2008-06-12 Matsushita Electric Works Ltd Ｂａｗ共振器の製造方法
CN103098201A (zh) * 2010-09-21 2013-05-08 罗伯特·博世有限公司 作为POP-mWLP的多功能传感器
JP2014170863A (ja) * 2013-03-05 2014-09-18 Sekisui Chem Co Ltd 圧電センサの製造方法
CN104881193A (zh) * 2015-06-02 2015-09-02 南昌欧菲光科技有限公司 触控显示装置、压力触控单元及其制作方法

Also Published As

Publication number Publication date
EP3853915B1 (de) 2022-11-30
WO2020094559A1 (de) 2020-05-14
CN113039656A (zh) 2021-06-25
JP2022506331A (ja) 2022-01-17
US12137615B2 (en) 2024-11-05
KR20210084623A (ko) 2021-07-07
DE102018127651A1 (de) 2020-05-07
US20210343926A1 (en) 2021-11-04
BR112021007772A2 (pt) 2021-07-27
EP3853915A1 (de) 2021-07-28
JP2024153687A (ja) 2024-10-29
KR102827418B1 (ko) 2025-07-01

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