KR102820386B1 - 플라스마 처리 장치 - Google Patents

플라스마 처리 장치 Download PDF

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Publication number
KR102820386B1
KR102820386B1 KR1020247002378A KR20247002378A KR102820386B1 KR 102820386 B1 KR102820386 B1 KR 102820386B1 KR 1020247002378 A KR1020247002378 A KR 1020247002378A KR 20247002378 A KR20247002378 A KR 20247002378A KR 102820386 B1 KR102820386 B1 KR 102820386B1
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KR
South Korea
Prior art keywords
plasma
microwave
room
waveguide
microwave power
Prior art date
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Active
Application number
KR1020247002378A
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English (en)
Korean (ko)
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KR20240055722A (ko
Inventor
히토시 다무라
노리히코 이케다
Original Assignee
주식회사 히타치하이테크
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Publication of KR20240055722A publication Critical patent/KR20240055722A/ko
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
KR1020247002378A 2022-10-19 2023-07-24 플라스마 처리 장치 Active KR102820386B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022167445 2022-10-19
JPJP-P-2022-167445 2022-10-19
PCT/JP2023/026919 WO2024084762A1 (ja) 2022-10-19 2023-07-24 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20240055722A KR20240055722A (ko) 2024-04-29
KR102820386B1 true KR102820386B1 (ko) 2025-06-16

Family

ID=90737465

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247002378A Active KR102820386B1 (ko) 2022-10-19 2023-07-24 플라스마 처리 장치

Country Status (6)

Country Link
US (1) US12444575B2 (https=)
JP (1) JP7637315B2 (https=)
KR (1) KR102820386B1 (https=)
CN (1) CN118235528A (https=)
TW (1) TWI899592B (https=)
WO (1) WO2024084762A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444575B2 (en) * 2022-10-19 2025-10-14 Hitachi High-Tech Corporation Plasma processing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119835850B (zh) * 2025-03-18 2025-05-13 深空探测实验室(天都实验室) 一种磁膨胀腔结构高能离子束发生装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012049353A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置

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JP3469987B2 (ja) 1996-04-01 2003-11-25 株式会社日立製作所 プラズマ処理装置
US2716221A (en) 1950-09-25 1955-08-23 Philip J Allen Rotatable dielectric slab phase-shifter for waveguide
JP2569019B2 (ja) * 1986-10-20 1997-01-08 株式会社日立製作所 エッチング方法及びその装置
US5359177A (en) * 1990-11-14 1994-10-25 Mitsubishi Denki Kabushiki Kaisha Microwave plasma apparatus for generating a uniform plasma
EP0502269A1 (en) 1991-03-06 1992-09-09 Hitachi, Ltd. Method of and system for microwave plasma treatments
US5230740A (en) 1991-12-17 1993-07-27 Crystallume Apparatus for controlling plasma size and position in plasma-activated chemical vapor deposition processes comprising rotating dielectric
DE4235914A1 (de) * 1992-10-23 1994-04-28 Juergen Prof Dr Engemann Vorrichtung zur Erzeugung von Mikrowellenplasmen
KR970071945A (ko) 1996-02-20 1997-11-07 가나이 쯔도무 플라즈마처리방법 및 장치
US5874706A (en) * 1996-09-26 1999-02-23 Tokyo Electron Limited Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field
DE19802971C2 (de) * 1998-01-27 1999-12-02 Fraunhofer Ges Forschung Plasmareaktor
US6652709B1 (en) 1999-11-02 2003-11-25 Canon Kabushiki Kaisha Plasma processing apparatus having circular waveguide, and plasma processing method
JP4441038B2 (ja) 2000-02-07 2010-03-31 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
US6677549B2 (en) 2000-07-24 2004-01-13 Canon Kabushiki Kaisha Plasma processing apparatus having permeable window covered with light shielding film
CN100573827C (zh) 2001-09-27 2009-12-23 东京毅力科创株式会社 电磁场供给装置及等离子体处理装置
JP2007035411A (ja) 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
JP2007035412A (ja) 2005-07-26 2007-02-08 Hitachi High-Technologies Corp プラズマ処理装置
EP2086285A1 (en) * 2008-02-01 2009-08-05 Anton Paar GmbH Applicator and Apparatus for heating samples by microwave radiation
JP2010050046A (ja) 2008-08-25 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置
JP2012044035A (ja) 2010-08-20 2012-03-01 Hitachi High-Technologies Corp 半導体製造装置
JP5690603B2 (ja) * 2011-01-26 2015-03-25 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2012190899A (ja) * 2011-03-09 2012-10-04 Hitachi High-Technologies Corp プラズマ処理装置
CN103262663B (zh) * 2011-04-28 2016-12-14 住友理工株式会社 微波等离子体生成装置和采用该装置的磁控溅射成膜装置
JP6442242B2 (ja) * 2014-11-17 2018-12-19 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP7001456B2 (ja) 2017-12-19 2022-01-19 株式会社日立ハイテク プラズマ処理装置
JP7184254B2 (ja) * 2018-12-06 2022-12-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN113454760B (zh) * 2020-01-27 2024-03-22 株式会社日立高新技术 等离子处理装置
WO2021220329A1 (ja) * 2020-04-27 2021-11-04 株式会社日立ハイテク プラズマ処理装置
WO2021220459A1 (ja) * 2020-04-30 2021-11-04 株式会社日立ハイテク プラズマ処理装置
JP7302094B2 (ja) * 2021-01-21 2023-07-03 株式会社日立ハイテク プラズマ処理装置
KR102808893B1 (ko) * 2021-02-19 2025-05-19 주식회사 히타치하이테크 플라스마 처리 장치
TWI899592B (zh) * 2022-10-19 2025-10-01 日商日立全球先端科技股份有限公司 電漿處理裝置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012049353A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444575B2 (en) * 2022-10-19 2025-10-14 Hitachi High-Tech Corporation Plasma processing apparatus

Also Published As

Publication number Publication date
WO2024084762A1 (ja) 2024-04-25
US20250246410A1 (en) 2025-07-31
TW202418344A (zh) 2024-05-01
JP7637315B2 (ja) 2025-02-27
KR20240055722A (ko) 2024-04-29
TWI899592B (zh) 2025-10-01
US12444575B2 (en) 2025-10-14
JPWO2024084762A1 (https=) 2024-04-25
CN118235528A (zh) 2024-06-21

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