KR102799365B1 - 양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법 - Google Patents

양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법 Download PDF

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KR102799365B1
KR102799365B1 KR1020227017572A KR20227017572A KR102799365B1 KR 102799365 B1 KR102799365 B1 KR 102799365B1 KR 1020227017572 A KR1020227017572 A KR 1020227017572A KR 20227017572 A KR20227017572 A KR 20227017572A KR 102799365 B1 KR102799365 B1 KR 102799365B1
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요시히로 노지마
신지 아오키
카즈야 토비시마
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신에쓰 가가꾸 고교 가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/04—Binary compounds including binary selenium-tellurium compounds
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

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  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
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  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
  • Optical Filters (AREA)
  • Planar Illumination Modules (AREA)
KR1020227017572A 2019-12-02 2020-10-29 양자 도트, 파장 변환 재료, 백라이트 유닛, 화상 표시 장치 및 양자 도트의 제조 방법 Active KR102799365B1 (ko)

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JPJP-P-2019-217782 2019-12-02
JP2019217782 2019-12-02
PCT/JP2020/040566 WO2021111777A1 (ja) 2019-12-02 2020-10-29 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法

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Families Citing this family (4)

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CN115746854B (zh) * 2022-12-10 2023-10-10 福州大学 立方型PN结SnSe/ZnSe/SnSe/ZnSe多阱核壳量子阱材料及制备方法
CN116694328A (zh) * 2022-12-28 2023-09-05 南京理工大学 高效黄绿光发射ZnTeSe阱型量子点的制备方法
WO2025026940A1 (en) * 2023-07-28 2025-02-06 Nexdot Ultraviolet filter
EP4729043A1 (en) * 2024-10-15 2026-04-22 Nexdot Personal care composition comprising composite particles

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013539798A (ja) * 2010-09-16 2013-10-28 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッド 異方性半導体ナノ粒子
CN108389982A (zh) 2016-08-23 2018-08-10 苏州星烁纳米科技有限公司 发光二极管装置及显示装置
JP2019145505A (ja) 2018-02-21 2019-08-29 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体ナノ結晶粒子とその製造方法、及びその集団、並びに電界発光素子
JP2019157129A (ja) 2018-03-09 2019-09-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 量子ドット及びこれを含む電界発光素子

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008508166A (ja) * 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
US8454927B2 (en) * 2004-08-04 2013-06-04 Crystalplex Corporation Alloyed semiconductor nanocrystals
GB2472542B (en) * 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
GB0714865D0 (en) 2007-07-31 2007-09-12 Nanoco Technologies Ltd Nanoparticles
CN101234779A (zh) 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法
KR101577300B1 (ko) * 2008-10-28 2015-12-15 삼성디스플레이 주식회사 양자점을 이용한 백색광 발광다이오드 구조 및 이를 포함하는 백라이트 어셈블리
CN102482457B (zh) * 2009-09-09 2015-04-15 Qd视光有限公司 包含纳米颗粒的颗粒、其应用和方法
KR102496406B1 (ko) 2010-11-10 2023-02-06 나노시스, 인크. 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들
WO2012132236A1 (ja) * 2011-03-31 2012-10-04 パナソニック株式会社 半導体発光素子および発光装置
WO2012177761A1 (en) * 2011-06-20 2012-12-27 Crystalplex Corporation Stabilized nanocrystals
WO2013162334A1 (ko) 2012-04-27 2013-10-31 한국화학연구원 아연-실버-인듐-설파이드의 조성을 갖는 발광특성이 향상된 발광나노입자와 조합화학을 이용한 이의 제조방법
US9166363B2 (en) * 2012-12-31 2015-10-20 Faquir C. Jain Enhanced optical gain and lasing in indirect gap semiconductor thin films and nanostructures
CN103450904B (zh) * 2013-09-11 2016-04-06 纳晶科技股份有限公司 具有核-壳结构的掺杂半导体纳米晶量子点及其制备方法
KR20180084040A (ko) * 2015-11-20 2018-07-24 제이에스알 가부시끼가이샤 나노 입자 집합체 및 그의 제조 방법, 나노 입자 집합체 조성물, 파장 변환층, 그리고 리간드
CN108938982A (zh) * 2017-05-20 2018-12-07 陈洪涛 防治气滞型症瘕的浆液
EP3660127A4 (en) * 2017-07-27 2021-03-31 NS Materials Inc. QUANTUM POINT, WAVELENGTH CONVERSION ELEMENT WITH QUANTUM POINT, LIGHTING ELEMENT, BACKLIGHTING DEVICE, DISPLAY DEVICE AND METHOD FOR MANUFACTURING QUANTUM POINTS
KR102661236B1 (ko) 2017-10-12 2024-04-29 엔에스 마테리얼스 아이엔씨. 양자점 및 그 제조 방법, 양자점을 이용한 파장 변환 부재, 조명 부재, 백라이트 장치, 및, 표시 장치
CN112074586B (zh) * 2018-04-04 2023-07-25 新加坡国立大学 发光纳米颗粒和含有其的发光太阳能集中器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013539798A (ja) * 2010-09-16 2013-10-28 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッド 異方性半導体ナノ粒子
CN108389982A (zh) 2016-08-23 2018-08-10 苏州星烁纳米科技有限公司 发光二极管装置及显示装置
JP2019145505A (ja) 2018-02-21 2019-08-29 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体ナノ結晶粒子とその製造方法、及びその集団、並びに電界発光素子
JP2019157129A (ja) 2018-03-09 2019-09-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 量子ドット及びこれを含む電界発光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Optical materials, 54, 2016, pp104-110 (2016.02.21.)*

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JP7273992B2 (ja) 2023-05-15
US20220411695A1 (en) 2022-12-29
JPWO2021111777A1 (https=) 2021-06-10
TWI841808B (zh) 2024-05-11
KR20220110486A (ko) 2022-08-08
WO2021111777A1 (ja) 2021-06-10
TW202128953A (zh) 2021-08-01
CN114746363B (zh) 2024-12-13
CN114746363A (zh) 2022-07-12

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