JPWO2021111777A1 - - Google Patents

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Publication number
JPWO2021111777A1
JPWO2021111777A1 JP2021562502A JP2021562502A JPWO2021111777A1 JP WO2021111777 A1 JPWO2021111777 A1 JP WO2021111777A1 JP 2021562502 A JP2021562502 A JP 2021562502A JP 2021562502 A JP2021562502 A JP 2021562502A JP WO2021111777 A1 JPWO2021111777 A1 JP WO2021111777A1
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JP
Japan
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JP2021562502A
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Japanese (ja)
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JP7273992B2 (ja
JPWO2021111777A5 (https=
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881Chalcogenides
    • C09K11/883Chalcogenides with zinc or cadmium
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/04Binary compounds including binary selenium-tellurium compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562Chalcogenides
    • C09K11/565Chalcogenides with zinc cadmium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133621Illuminating devices providing coloured light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
  • Optical Filters (AREA)
  • Planar Illumination Modules (AREA)
JP2021562502A 2019-12-02 2020-10-29 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法 Active JP7273992B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019217782 2019-12-02
JP2019217782 2019-12-02
PCT/JP2020/040566 WO2021111777A1 (ja) 2019-12-02 2020-10-29 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法

Publications (3)

Publication Number Publication Date
JPWO2021111777A1 true JPWO2021111777A1 (https=) 2021-06-10
JPWO2021111777A5 JPWO2021111777A5 (https=) 2022-08-19
JP7273992B2 JP7273992B2 (ja) 2023-05-15

Family

ID=76222380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021562502A Active JP7273992B2 (ja) 2019-12-02 2020-10-29 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法

Country Status (6)

Country Link
US (1) US20220411695A1 (https=)
JP (1) JP7273992B2 (https=)
KR (1) KR102799365B1 (https=)
CN (1) CN114746363B (https=)
TW (1) TWI841808B (https=)
WO (1) WO2021111777A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115746854B (zh) * 2022-12-10 2023-10-10 福州大学 立方型PN结SnSe/ZnSe/SnSe/ZnSe多阱核壳量子阱材料及制备方法
CN116694328A (zh) * 2022-12-28 2023-09-05 南京理工大学 高效黄绿光发射ZnTeSe阱型量子点的制备方法
WO2025026940A1 (en) * 2023-07-28 2025-02-06 Nexdot Ultraviolet filter
EP4729043A1 (en) * 2024-10-15 2026-04-22 Nexdot Personal care composition comprising composite particles

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WO2012132236A1 (ja) * 2011-03-31 2012-10-04 パナソニック株式会社 半導体発光素子および発光装置
JP2013539798A (ja) * 2010-09-16 2013-10-28 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッド 異方性半導体ナノ粒子
US20140185640A1 (en) * 2012-12-31 2014-07-03 Faquir C. Jain Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin Films and Nanostructures
CN108389982A (zh) * 2016-08-23 2018-08-10 苏州星烁纳米科技有限公司 发光二极管装置及显示装置
JP2019145505A (ja) * 2018-02-21 2019-08-29 三星電子株式会社Samsung Electronics Co.,Ltd. 半導体ナノ結晶粒子とその製造方法、及びその集団、並びに電界発光素子
JP2019157129A (ja) * 2018-03-09 2019-09-19 三星電子株式会社Samsung Electronics Co.,Ltd. 量子ドット及びこれを含む電界発光素子

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US8454927B2 (en) * 2004-08-04 2013-06-04 Crystalplex Corporation Alloyed semiconductor nanocrystals
GB2472542B (en) * 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
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CN101234779A (zh) 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法
KR101577300B1 (ko) * 2008-10-28 2015-12-15 삼성디스플레이 주식회사 양자점을 이용한 백색광 발광다이오드 구조 및 이를 포함하는 백라이트 어셈블리
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US20140185640A1 (en) * 2012-12-31 2014-07-03 Faquir C. Jain Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin Films and Nanostructures
CN108389982A (zh) * 2016-08-23 2018-08-10 苏州星烁纳米科技有限公司 发光二极管装置及显示装置
JP2019145505A (ja) * 2018-02-21 2019-08-29 三星電子株式会社Samsung Electronics Co.,Ltd. 半導体ナノ結晶粒子とその製造方法、及びその集団、並びに電界発光素子
JP2019157129A (ja) * 2018-03-09 2019-09-19 三星電子株式会社Samsung Electronics Co.,Ltd. 量子ドット及びこれを含む電界発光素子

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Also Published As

Publication number Publication date
JP7273992B2 (ja) 2023-05-15
US20220411695A1 (en) 2022-12-29
KR102799365B1 (ko) 2025-04-22
TWI841808B (zh) 2024-05-11
KR20220110486A (ko) 2022-08-08
WO2021111777A1 (ja) 2021-06-10
TW202128953A (zh) 2021-08-01
CN114746363B (zh) 2024-12-13
CN114746363A (zh) 2022-07-12

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