JP7273992B2 - 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法 - Google Patents

量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法 Download PDF

Info

Publication number
JP7273992B2
JP7273992B2 JP2021562502A JP2021562502A JP7273992B2 JP 7273992 B2 JP7273992 B2 JP 7273992B2 JP 2021562502 A JP2021562502 A JP 2021562502A JP 2021562502 A JP2021562502 A JP 2021562502A JP 7273992 B2 JP7273992 B2 JP 7273992B2
Authority
JP
Japan
Prior art keywords
zns
quantum
quantum dots
solution
quantum dot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021562502A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021111777A1 (https=
JPWO2021111777A5 (https=
Inventor
義弘 野島
伸司 青木
一也 鳶島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of JPWO2021111777A1 publication Critical patent/JPWO2021111777A1/ja
Publication of JPWO2021111777A5 publication Critical patent/JPWO2021111777A5/ja
Application granted granted Critical
Publication of JP7273992B2 publication Critical patent/JP7273992B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/04—Binary compounds including binary selenium-tellurium compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/56—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing sulfur
    • C09K11/562—Chalcogenides
    • C09K11/565—Chalcogenides with zinc cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133621—Illuminating devices providing coloured light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Luminescent Compositions (AREA)
  • Optical Filters (AREA)
  • Planar Illumination Modules (AREA)
JP2021562502A 2019-12-02 2020-10-29 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法 Active JP7273992B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019217782 2019-12-02
JP2019217782 2019-12-02
PCT/JP2020/040566 WO2021111777A1 (ja) 2019-12-02 2020-10-29 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法

Publications (3)

Publication Number Publication Date
JPWO2021111777A1 JPWO2021111777A1 (https=) 2021-06-10
JPWO2021111777A5 JPWO2021111777A5 (https=) 2022-08-19
JP7273992B2 true JP7273992B2 (ja) 2023-05-15

Family

ID=76222380

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021562502A Active JP7273992B2 (ja) 2019-12-02 2020-10-29 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法

Country Status (6)

Country Link
US (1) US20220411695A1 (https=)
JP (1) JP7273992B2 (https=)
KR (1) KR102799365B1 (https=)
CN (1) CN114746363B (https=)
TW (1) TWI841808B (https=)
WO (1) WO2021111777A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115746854B (zh) * 2022-12-10 2023-10-10 福州大学 立方型PN结SnSe/ZnSe/SnSe/ZnSe多阱核壳量子阱材料及制备方法
CN116694328A (zh) * 2022-12-28 2023-09-05 南京理工大学 高效黄绿光发射ZnTeSe阱型量子点的制备方法
WO2025026940A1 (en) * 2023-07-28 2025-02-06 Nexdot Ultraviolet filter
EP4729043A1 (en) * 2024-10-15 2026-04-22 Nexdot Personal care composition comprising composite particles

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012132236A1 (ja) 2011-03-31 2012-10-04 パナソニック株式会社 半導体発光素子および発光装置
JP2013539798A (ja) 2010-09-16 2013-10-28 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッド 異方性半導体ナノ粒子
US20140185640A1 (en) 2012-12-31 2014-07-03 Faquir C. Jain Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin Films and Nanostructures
CN108389982A (zh) 2016-08-23 2018-08-10 苏州星烁纳米科技有限公司 发光二极管装置及显示装置
JP2019145505A (ja) 2018-02-21 2019-08-29 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体ナノ結晶粒子とその製造方法、及びその集団、並びに電界発光素子
JP2019157129A (ja) 2018-03-09 2019-09-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 量子ドット及びこれを含む電界発光素子

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7446335B2 (en) * 2004-06-18 2008-11-04 Regents Of The University Of Minnesota Process and apparatus for forming nanoparticles using radiofrequency plasmas
US8454927B2 (en) * 2004-08-04 2013-06-04 Crystalplex Corporation Alloyed semiconductor nanocrystals
GB2472541B (en) * 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
GB0714865D0 (en) 2007-07-31 2007-09-12 Nanoco Technologies Ltd Nanoparticles
CN101234779A (zh) 2008-03-06 2008-08-06 中国科学院化学研究所 铜铟硫半导体纳米粒子的制备方法
KR101577300B1 (ko) * 2008-10-28 2015-12-15 삼성디스플레이 주식회사 양자점을 이용한 백색광 발광다이오드 구조 및 이를 포함하는 백라이트 어셈블리
JP5744033B2 (ja) * 2009-09-09 2015-07-01 キユーデイー・ビジヨン・インコーポレーテツド ナノ粒子を含む粒子、それの使用および方法
EP2638321B1 (en) 2010-11-10 2019-05-08 Nanosys, Inc. Quantum dot films, lighting devices, and lighting methods
EP3929965A1 (en) * 2011-06-20 2021-12-29 Crystalplex Corporation Stabilized nanocrystals
WO2013162334A1 (ko) 2012-04-27 2013-10-31 한국화학연구원 아연-실버-인듐-설파이드의 조성을 갖는 발광특성이 향상된 발광나노입자와 조합화학을 이용한 이의 제조방법
CN103450904B (zh) * 2013-09-11 2016-04-06 纳晶科技股份有限公司 具有核-壳结构的掺杂半导体纳米晶量子点及其制备方法
KR20180084040A (ko) * 2015-11-20 2018-07-24 제이에스알 가부시끼가이샤 나노 입자 집합체 및 그의 제조 방법, 나노 입자 집합체 조성물, 파장 변환층, 그리고 리간드
CN108938982A (zh) * 2017-05-20 2018-12-07 陈洪涛 防治气滞型症瘕的浆液
KR20260033623A (ko) * 2017-07-27 2026-03-10 도판 홀딩스 가부시키가이샤 양자점 및, 양자점을 이용한 파장 변환 부재, 조명 부재, 백라이트 장치, 표시 장치, 및, 양자점의 제조 방법
TWI756032B (zh) 2017-10-12 2022-02-21 日商Ｎｓ材料股份有限公司 量子點及其製造方法、使用量子點之波長轉換構件、照明構件、背光裝置、及顯示裝置
WO2019194749A1 (en) * 2018-04-04 2019-10-10 National University Of Singapore Luminescent nanoparticles and luminescent solar concentrators containing same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013539798A (ja) 2010-09-16 2013-10-28 イッスム・リサーチ・ディベロップメント・カンパニー・オブ・ザ・ヘブルー・ユニバーシティ・オブ・エルサレム・リミテッド 異方性半導体ナノ粒子
WO2012132236A1 (ja) 2011-03-31 2012-10-04 パナソニック株式会社 半導体発光素子および発光装置
US20140185640A1 (en) 2012-12-31 2014-07-03 Faquir C. Jain Enhanced Optical Gain and Lasing in Indirect Gap Semiconductor Thin Films and Nanostructures
CN108389982A (zh) 2016-08-23 2018-08-10 苏州星烁纳米科技有限公司 发光二极管装置及显示装置
JP2019145505A (ja) 2018-02-21 2019-08-29 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体ナノ結晶粒子とその製造方法、及びその集団、並びに電界発光素子
JP2019157129A (ja) 2018-03-09 2019-09-19 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 量子ドット及びこれを含む電界発光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ASANO, Hiroshi et al.，ACS OMEGA，2018年，Vol.3，pp.6703-6709

Also Published As

Publication number Publication date
KR20220110486A (ko) 2022-08-08
TWI841808B (zh) 2024-05-11
WO2021111777A1 (ja) 2021-06-10
JPWO2021111777A1 (https=) 2021-06-10
CN114746363A (zh) 2022-07-12
US20220411695A1 (en) 2022-12-29
CN114746363B (zh) 2024-12-13
TW202128953A (zh) 2021-08-01
KR102799365B1 (ko) 2025-04-22

Similar Documents

Publication Publication Date Title
JP7273992B2 (ja) 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法
US8017972B2 (en) Multilayered white light emitting diode using quantum dots and method of fabricating the same
TWI608076B (zh) 以金屬硫醇聚合物穩定化的量子點
JP6293710B2 (ja) 半導体ナノ粒子およびその製造方法
JP7278371B2 (ja) 量子ドット、波長変換材料、バックライトユニット、画像表示装置及び量子ドットの製造方法
CN110072969A (zh) 半导体发光纳米粒子
Chang et al. Synthesis of SiO2-coated CdSe/ZnS quantum dots using various dispersants in the photoresist for color-conversion micro-LED displays
CN115362238B (zh) 量子点的制造方法
JP2025108706A (ja) 波長変換体及びそれを用いた波長変換材料
Das et al. Coexistence of strongly and weakly confined energy levels in (Cd, Zn) Se quantum dots: Tailoring the near-band-edge and defect-levels for white light emission
KR102822742B1 (ko) 반도체 나노 입자 집합체, 반도체 나노 입자 집합체 분산액, 반도체 나노 입자 집합체 조성물 및 반도체 나노 입자 집합체 경화막
KR102822743B1 (ko) 반도체 나노 입자 집합체, 반도체 나노 입자 집합체 분산액, 반도체 나노 입자 집합체 조성물 및 반도체 나노 입자 집합체 경화막
JP2015151456A (ja) 発光体粒子、発光体粒子の製造方法、光学部材、光学部材の製造方法および光学デバイス
Menkara et al. Hybrid Down-Converting Structures for Solid State Lighting
JP2025153609A (ja) 量子ドット、波長変換部材、バックライトユニット、画像表示装置及び量子ドットの製造方法
WO2025258424A1 (ja) 量子ドット、波長変換部材、バックライトユニット、画像表示装置及び量子ドットの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220524

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220524

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221206

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230202

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230411

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230428

R150 Certificate of patent or registration of utility model

Ref document number: 7273992

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150