KR102790443B1 - Led 어레이 - Google Patents

Led 어레이 Download PDF

Info

Publication number
KR102790443B1
KR102790443B1 KR1020217013348A KR20217013348A KR102790443B1 KR 102790443 B1 KR102790443 B1 KR 102790443B1 KR 1020217013348 A KR1020217013348 A KR 1020217013348A KR 20217013348 A KR20217013348 A KR 20217013348A KR 102790443 B1 KR102790443 B1 KR 102790443B1
Authority
KR
South Korea
Prior art keywords
layer
led
array
semiconductor layer
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217013348A
Other languages
English (en)
Korean (ko)
Other versions
KR20210069101A (ko
Inventor
타오 왕
Original Assignee
스냅 아이엔씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 스냅 아이엔씨 filed Critical 스냅 아이엔씨
Priority to KR1020257010201A priority Critical patent/KR20250050979A/ko
Publication of KR20210069101A publication Critical patent/KR20210069101A/ko
Application granted granted Critical
Publication of KR102790443B1 publication Critical patent/KR102790443B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

Landscapes

  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020217013348A 2018-10-09 2019-10-08 Led 어레이 Active KR102790443B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257010201A KR20250050979A (ko) 2018-10-09 2019-10-08 Led 어레이

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1816455.8 2018-10-09
GBGB1816455.8A GB201816455D0 (en) 2018-10-09 2018-10-09 LED Arrays
PCT/GB2019/052843 WO2020074875A1 (en) 2018-10-09 2019-10-08 LED Arrays

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257010201A Division KR20250050979A (ko) 2018-10-09 2019-10-08 Led 어레이

Publications (2)

Publication Number Publication Date
KR20210069101A KR20210069101A (ko) 2021-06-10
KR102790443B1 true KR102790443B1 (ko) 2025-04-01

Family

ID=64394978

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020217013348A Active KR102790443B1 (ko) 2018-10-09 2019-10-08 Led 어레이
KR1020257010201A Pending KR20250050979A (ko) 2018-10-09 2019-10-08 Led 어레이

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257010201A Pending KR20250050979A (ko) 2018-10-09 2019-10-08 Led 어레이

Country Status (7)

Country Link
US (2) US20210335884A1 (enExample)
EP (1) EP3864699A1 (enExample)
JP (4) JP7407181B2 (enExample)
KR (2) KR102790443B1 (enExample)
CN (2) CN121038476A (enExample)
GB (1) GB201816455D0 (enExample)
WO (1) WO2020074875A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4062459A4 (en) * 2019-11-18 2024-02-28 Avicenatech Corp. FAST, MULTI-CONTACT LEDS FOR DATA COMMUNICATION
FR3112026B1 (fr) * 2020-06-30 2022-09-23 Aledia Dispositif optoélectronique et procédé de fabrication
CN111864024A (zh) * 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法
JP7591785B2 (ja) * 2020-12-25 2024-11-29 セイコーエプソン株式会社 発光装置の製造方法
EP4085449A1 (en) * 2021-03-23 2022-11-09 Google LLC Baseline and shaped pulse driving for micro-light emitting diode display
DE102021134107A1 (de) 2021-12-21 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen von mikro-halbleiter-leuchtdioden-strukturen und halbleiter-leuchtdiode
CN118867079A (zh) * 2023-04-27 2024-10-29 苏州晶湛半导体有限公司 一种半导体结构及其制作方法
WO2025182431A1 (ja) 2024-02-26 2025-09-04 セイコーインスツル株式会社 ボタン型アルカリ一次電池用負極缶、およびボタン型アルカリ一次電池
CN119050125B (zh) * 2024-08-21 2025-08-26 西安电子科技大学广州研究院 一种多种颜色led阵列及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030087462A1 (en) 2001-11-02 2003-05-08 Norikatsu Koide Semiconductor light emitting device and method for producing the same
US20100140629A1 (en) * 2008-12-04 2010-06-10 Lee Chi-Shen Light-emitting diode and method for fabricating the same

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3744211B2 (ja) * 1997-09-01 2006-02-08 日亜化学工業株式会社 窒化物半導体素子
US6329676B1 (en) * 1999-03-01 2001-12-11 Toru Takayama Flat panel solid state light source
JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
JP4651161B2 (ja) * 2000-07-03 2011-03-16 宣彦 澤木 半導体素子およびその製造方法
US7595511B2 (en) * 2003-08-08 2009-09-29 Sang-Kyu Kang Nitride micro light emitting diode with high brightness and method of manufacturing the same
US7417258B2 (en) * 2005-04-28 2008-08-26 Sharp Kabushiki Kaisha Semiconductor light-emitting device, and a method of manufacture of a semiconductor device
JP4525500B2 (ja) * 2005-07-14 2010-08-18 パナソニック電工株式会社 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法
KR100869962B1 (ko) * 2006-12-07 2008-11-24 한국전자통신연구원 전류 확산층을 포함하는 발광소자의 제조방법
JP2009071220A (ja) * 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR100956499B1 (ko) * 2008-08-01 2010-05-07 주식회사 실트론 금속층을 가지는 화합물 반도체 기판, 그 제조 방법 및이를 이용한 화합물 반도체 소자
JP4586935B2 (ja) * 2010-03-17 2010-11-24 パナソニック電工株式会社 半導体発光素子の製造方法
JP2011258631A (ja) * 2010-06-07 2011-12-22 Panasonic Corp 発光ダイオード素子およびその製造方法
CN102709410B (zh) * 2012-06-04 2014-08-27 中国科学院半导体研究所 纳米柱发光二极管的制作方法
KR101898679B1 (ko) * 2012-12-14 2018-10-04 삼성전자주식회사 나노구조 발광소자
KR102022266B1 (ko) * 2013-01-29 2019-09-18 삼성전자주식회사 나노구조 반도체 발광소자 제조방법
US20150137072A1 (en) * 2013-11-19 2015-05-21 Gwangju Institute Of Science And Technology Mask for forming semiconductor layer, semiconductor device, and method of fabricating the same
KR101452801B1 (ko) * 2014-03-25 2014-10-22 광주과학기술원 발광다이오드 및 이의 제조방법
KR20160027610A (ko) * 2014-09-01 2016-03-10 삼성전자주식회사 나노구조 반도체 발광소자
WO2016049507A1 (en) * 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
JP6959919B2 (ja) * 2015-12-04 2021-11-05 クロミス，インコーポレイテッド 加工基板上のワイドバンドギャップデバイス集積回路アーキテクチャ
KR101837623B1 (ko) * 2015-12-21 2018-03-13 (재)한국나노기술원 질화물 반도체 발광소자 및 그 제조방법
GB201705755D0 (en) * 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure
CN207183308U (zh) * 2017-09-21 2018-04-03 山西飞虹微纳米光电科技有限公司 基于GaN基轴向纳米棒阵列的LED
CN107833878B (zh) * 2017-11-29 2019-06-14 北京工业大学 一种全色堆栈式外延的Micro-LED倒装阵列制备方法
FR3080487B1 (fr) * 2018-04-20 2020-06-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’un dispositif optoelectronique a matrice de diodes
CN111864024A (zh) * 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030087462A1 (en) 2001-11-02 2003-05-08 Norikatsu Koide Semiconductor light emitting device and method for producing the same
US20100140629A1 (en) * 2008-12-04 2010-06-10 Lee Chi-Shen Light-emitting diode and method for fabricating the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Also Published As

Publication number Publication date
JP2026102661A (ja) 2026-06-23
CN112823421A (zh) 2021-05-18
GB201816455D0 (en) 2018-11-28
KR20210069101A (ko) 2021-06-10
EP3864699A1 (en) 2021-08-18
JP2024026392A (ja) 2024-02-28
JP2025060989A (ja) 2025-04-10
JP2022504524A (ja) 2022-01-13
CN121038476A (zh) 2025-11-28
US20210335884A1 (en) 2021-10-28
KR20250050979A (ko) 2025-04-15
WO2020074875A1 (en) 2020-04-16
JP7617236B2 (ja) 2025-01-17
JP7829745B2 (ja) 2026-03-13
CN112823421B (zh) 2025-08-08
US20250022910A1 (en) 2025-01-16
JP7407181B2 (ja) 2023-12-28

Similar Documents

Publication Publication Date Title
JP7829745B2 (ja) Ｌｅｄアレイ
JP7683060B2 (ja) Ｌｅｄアレイ
US8058082B2 (en) Light-emitting diode with textured substrate
JP7787232B2 (ja) Ｌｅｄアレイ
US20160163922A1 (en) Nano-structured light-emitting devices
US20230069410A1 (en) High resolution monolithic rgb arrays
TWI803841B (zh) 高分辨率單體式ｒｇｂ陣列
KR101666836B1 (ko) 형광체 없는 백색 발광다이오드 성장 기술
JP7857937B2 (ja) 電圧制御可能なモノリシックネイティブｒｇｂアレイ
KR20130131050A (ko) 반도체 발광소자 및 그 제조방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A16-div-PA0104

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000