JP7407181B2 - Ｌｅｄアレイ - Google Patents

Ｌｅｄアレイ Download PDF

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Publication number
JP7407181B2
JP7407181B2 JP2021519576A JP2021519576A JP7407181B2 JP 7407181 B2 JP7407181 B2 JP 7407181B2 JP 2021519576 A JP2021519576 A JP 2021519576A JP 2021519576 A JP2021519576 A JP 2021519576A JP 7407181 B2 JP7407181 B2 JP 7407181B2
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layer
led
array
semiconductor layer
holes
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Japanese (ja)
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JP2022504524A (ja
JP2022504524A5 (enExample
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ワーン，タオ
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スナップ・インコーポレーテッド
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Priority to JP2023212818A priority Critical patent/JP7617236B2/ja
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Priority to JP2025000067A priority patent/JP7829745B2/ja
Priority to JP2026032983A priority patent/JP2026102661A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

Landscapes

  • Led Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2021519576A 2018-10-09 2019-10-08 Ｌｅｄアレイ Active JP7407181B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023212818A JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ
JP2026032983A JP2026102661A (ja) 2018-10-09 2026-03-03 Ｌｅｄアレイ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1816455.8 2018-10-09
GBGB1816455.8A GB201816455D0 (en) 2018-10-09 2018-10-09 LED Arrays
PCT/GB2019/052843 WO2020074875A1 (en) 2018-10-09 2019-10-08 LED Arrays

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023212818A Division JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ

Publications (3)

Publication Number Publication Date
JP2022504524A JP2022504524A (ja) 2022-01-13
JP2022504524A5 JP2022504524A5 (enExample) 2022-10-17
JP7407181B2 true JP7407181B2 (ja) 2023-12-28

Family

ID=64394978

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2021519576A Active JP7407181B2 (ja) 2018-10-09 2019-10-08 Ｌｅｄアレイ
JP2023212818A Active JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A Active JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ
JP2026032983A Pending JP2026102661A (ja) 2018-10-09 2026-03-03 Ｌｅｄアレイ

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2023212818A Active JP7617236B2 (ja) 2018-10-09 2023-12-18 Ｌｅｄアレイ
JP2025000067A Active JP7829745B2 (ja) 2018-10-09 2025-01-06 Ｌｅｄアレイ
JP2026032983A Pending JP2026102661A (ja) 2018-10-09 2026-03-03 Ｌｅｄアレイ

Country Status (7)

Country Link
US (2) US20210335884A1 (enExample)
EP (1) EP3864699A1 (enExample)
JP (4) JP7407181B2 (enExample)
KR (2) KR102790443B1 (enExample)
CN (2) CN121038476A (enExample)
GB (1) GB201816455D0 (enExample)
WO (1) WO2020074875A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4062459A4 (en) * 2019-11-18 2024-02-28 Avicenatech Corp. FAST, MULTI-CONTACT LEDS FOR DATA COMMUNICATION
FR3112026B1 (fr) * 2020-06-30 2022-09-23 Aledia Dispositif optoélectronique et procédé de fabrication
CN111864024A (zh) * 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法
JP7591785B2 (ja) * 2020-12-25 2024-11-29 セイコーエプソン株式会社 発光装置の製造方法
EP4085449A1 (en) * 2021-03-23 2022-11-09 Google LLC Baseline and shaped pulse driving for micro-light emitting diode display
DE102021134107A1 (de) 2021-12-21 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen von mikro-halbleiter-leuchtdioden-strukturen und halbleiter-leuchtdiode
CN118867079A (zh) * 2023-04-27 2024-10-29 苏州晶湛半导体有限公司 一种半导体结构及其制作方法
WO2025182431A1 (ja) 2024-02-26 2025-09-04 セイコーインスツル株式会社 ボタン型アルカリ一次電池用負極缶、およびボタン型アルカリ一次電池
CN119050125B (zh) * 2024-08-21 2025-08-26 西安电子科技大学广州研究院 一种多种颜色led阵列及其制备方法

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JP2002026387A (ja) 2000-07-03 2002-01-25 Nobuhiko Sawaki 半導体素子およびその製造方法
JP2009071220A (ja) 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2010135859A (ja) 2010-03-17 2010-06-17 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
JP2011258631A (ja) 2010-06-07 2011-12-22 Panasonic Corp 発光ダイオード素子およびその製造方法
CN102709410A (zh) 2012-06-04 2012-10-03 中国科学院半导体研究所 纳米柱发光二极管的制作方法
US20140166974A1 (en) 2012-12-14 2014-06-19 Samsung Electronics Co., Ltd. Nano-structured light-emitting devices
US20140246647A1 (en) 2013-01-29 2014-09-04 Samsung Electronics Co., Ltd. Nanostructure light emitting device and method of manufacturing the same
US20160064607A1 (en) 2014-09-01 2016-03-03 Samsung Electronics Co., Ltd. Nanostructure semiconductor light emitting device
WO2016049507A1 (en) 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
CN107833878A (zh) 2017-11-29 2018-03-23 北京工业大学 一种全色堆栈式外延的Micro‑LED倒装阵列制备方法
CN111864024A (zh) 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法

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JP3744211B2 (ja) * 1997-09-01 2006-02-08 日亜化学工業株式会社 窒化物半導体素子
US6329676B1 (en) * 1999-03-01 2001-12-11 Toru Takayama Flat panel solid state light source
JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
JP2003142728A (ja) 2001-11-02 2003-05-16 Sharp Corp 半導体発光素子の製造方法
US7595511B2 (en) * 2003-08-08 2009-09-29 Sang-Kyu Kang Nitride micro light emitting diode with high brightness and method of manufacturing the same
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KR100869962B1 (ko) * 2006-12-07 2008-11-24 한국전자통신연구원 전류 확산층을 포함하는 발광소자의 제조방법
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Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026387A (ja) 2000-07-03 2002-01-25 Nobuhiko Sawaki 半導体素子およびその製造方法
JP2009071220A (ja) 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2010135859A (ja) 2010-03-17 2010-06-17 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
JP2011258631A (ja) 2010-06-07 2011-12-22 Panasonic Corp 発光ダイオード素子およびその製造方法
CN102709410A (zh) 2012-06-04 2012-10-03 中国科学院半导体研究所 纳米柱发光二极管的制作方法
US20140166974A1 (en) 2012-12-14 2014-06-19 Samsung Electronics Co., Ltd. Nano-structured light-emitting devices
US20140246647A1 (en) 2013-01-29 2014-09-04 Samsung Electronics Co., Ltd. Nanostructure light emitting device and method of manufacturing the same
US20160064607A1 (en) 2014-09-01 2016-03-03 Samsung Electronics Co., Ltd. Nanostructure semiconductor light emitting device
WO2016049507A1 (en) 2014-09-26 2016-03-31 Glo Ab Monolithic image chip for near-to-eye display
CN107833878A (zh) 2017-11-29 2018-03-23 北京工业大学 一种全色堆栈式外延的Micro‑LED倒装阵列制备方法
CN111864024A (zh) 2020-07-24 2020-10-30 武汉大学 一种选区外延生长Micro-LED芯片及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12426426B2 (en) 2019-07-19 2025-09-23 Snap Inc. Arrays of LED structures extending through holes in a dielectric layer and independently activated
US12446385B2 (en) 2023-11-03 2025-10-14 Snap Inc. Monolithic RGB microLED array

Also Published As

Publication number Publication date
JP2026102661A (ja) 2026-06-23
CN112823421A (zh) 2021-05-18
GB201816455D0 (en) 2018-11-28
KR20210069101A (ko) 2021-06-10
EP3864699A1 (en) 2021-08-18
JP2024026392A (ja) 2024-02-28
JP2025060989A (ja) 2025-04-10
JP2022504524A (ja) 2022-01-13
CN121038476A (zh) 2025-11-28
US20210335884A1 (en) 2021-10-28
KR20250050979A (ko) 2025-04-15
WO2020074875A1 (en) 2020-04-16
JP7617236B2 (ja) 2025-01-17
JP7829745B2 (ja) 2026-03-13
KR102790443B1 (ko) 2025-04-01
CN112823421B (zh) 2025-08-08
US20250022910A1 (en) 2025-01-16

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