KR102783735B1 - 알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법 - Google Patents

알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법 Download PDF

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KR102783735B1
KR102783735B1 KR1020227043670A KR20227043670A KR102783735B1 KR 102783735 B1 KR102783735 B1 KR 102783735B1 KR 1020227043670 A KR1020227043670 A KR 1020227043670A KR 20227043670 A KR20227043670 A KR 20227043670A KR 102783735 B1 KR102783735 B1 KR 102783735B1
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South Korea
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polishing
acid
composition
aluminum
polishing composition
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KR20230007519A (ko
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룽-타이 루
웬-쳉 리우
지우-칭 첸
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씨엠씨 머티리얼즈 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/02—Light metals
    • C23F3/03—Light metals with acidic solutions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/02—Light metals

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020227043670A 2014-06-20 2015-06-18 알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법 Active KR102783735B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462015084P 2014-06-20 2014-06-20
US62/015,084 2014-06-20
KR1020177001259A KR20170023080A (ko) 2014-06-20 2015-06-18 알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법
PCT/US2015/036477 WO2015195946A1 (en) 2014-06-20 2015-06-18 Cmp slurry compositions and methods for aluminum polishing

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177001259A Division KR20170023080A (ko) 2014-06-20 2015-06-18 알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법

Publications (2)

Publication Number Publication Date
KR20230007519A KR20230007519A (ko) 2023-01-12
KR102783735B1 true KR102783735B1 (ko) 2025-03-21

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KR1020227043670A Active KR102783735B1 (ko) 2014-06-20 2015-06-18 알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법
KR1020177001259A Ceased KR20170023080A (ko) 2014-06-20 2015-06-18 알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법

Family Applications After (1)

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KR1020177001259A Ceased KR20170023080A (ko) 2014-06-20 2015-06-18 알루미늄 연마를 위한 ｃｍｐ 슬러리 조성물 및 방법

Country Status (6)

Country Link
US (1) US20150368515A1 (enExample)
JP (1) JP6800418B2 (enExample)
KR (2) KR102783735B1 (enExample)
CN (1) CN106661427B (enExample)
TW (1) TWI561620B (enExample)
WO (1) WO2015195946A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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US9359686B1 (en) 2015-01-09 2016-06-07 Apple Inc. Processes to reduce interfacial enrichment of alloying elements under anodic oxide films and improve anodized appearance of heat treatable alloys
US20160289858A1 (en) * 2015-04-03 2016-10-06 Apple Inc. Process to mitigate grain texture differential growth rates in mirror-finish anodized aluminum
US11352708B2 (en) 2016-08-10 2022-06-07 Apple Inc. Colored multilayer oxide coatings
US11242614B2 (en) 2017-02-17 2022-02-08 Apple Inc. Oxide coatings for providing corrosion resistance on parts with edges and convex features
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
JP7034667B2 (ja) * 2017-10-24 2022-03-14 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
KR102533083B1 (ko) * 2017-12-18 2023-05-17 주식회사 케이씨텍 다결정실리콘을 함유하는 웨이퍼의 연마 슬러리 조성물
US11549191B2 (en) 2018-09-10 2023-01-10 Apple Inc. Corrosion resistance for anodized parts having convex surface features
CN113710761B (zh) * 2019-04-17 2024-04-09 Cmc材料有限责任公司 用于钨擦光应用的经表面涂覆的研磨剂颗粒
CN111020590A (zh) * 2019-11-25 2020-04-17 昆山兰博旺新材料技术服务有限公司 环保型铝合金化学抛光液
JP7697781B2 (ja) * 2020-03-25 2025-06-24 株式会社フジミインコーポレーテッド 研磨用組成物、その製造方法、研磨方法および半導体基板の製造方法
TWI883133B (zh) * 2020-03-25 2025-05-11 日商福吉米股份有限公司 研磨用組合物、其製造方法、研磨方法及半導體基板的製造方法
CN115198275B (zh) * 2022-06-07 2024-02-09 湖北奥美伦科技有限公司 一种砂面铝合金掩蔽剂及其制备方法和应用
CN117327450A (zh) * 2023-09-21 2024-01-02 浙江芯秦微电子科技有限公司 一种抛光液的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010046395A (ko) * 1999-11-12 2001-06-15 안복현 연마용 조성물
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US6755721B2 (en) * 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US9343330B2 (en) * 2006-12-06 2016-05-17 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
CN101802125B (zh) * 2007-09-21 2013-11-06 卡伯特微电子公司 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
GB2478250B (en) * 2008-12-22 2014-09-03 Kao Corp Polishing liquid composition for magnetic-disk substrate
JP5613422B2 (ja) * 2010-02-12 2014-10-22 花王株式会社 磁気ディスク基板用研磨液組成物
US20130005149A1 (en) * 2010-02-22 2013-01-03 Basf Se Chemical-mechanical planarization of substrates containing copper, ruthenium, and tantalum layers
US8623766B2 (en) * 2011-09-20 2014-01-07 Cabot Microelectronics Corporation Composition and method for polishing aluminum semiconductor substrates
JP6050934B2 (ja) * 2011-11-08 2016-12-21 株式会社フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び基板の製造方法

Also Published As

Publication number Publication date
JP6800418B2 (ja) 2020-12-16
TWI561620B (en) 2016-12-11
JP2017527446A (ja) 2017-09-21
WO2015195946A1 (en) 2015-12-23
KR20170023080A (ko) 2017-03-02
TW201600591A (zh) 2016-01-01
CN106661427B (zh) 2019-06-28
CN106661427A (zh) 2017-05-10
KR20230007519A (ko) 2023-01-12
US20150368515A1 (en) 2015-12-24

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