KR102769982B1 - 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물 - Google Patents

억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물 Download PDF

Info

Publication number
KR102769982B1
KR102769982B1 KR1020207031530A KR20207031530A KR102769982B1 KR 102769982 B1 KR102769982 B1 KR 102769982B1 KR 1020207031530 A KR1020207031530 A KR 1020207031530A KR 20207031530 A KR20207031530 A KR 20207031530A KR 102769982 B1 KR102769982 B1 KR 102769982B1
Authority
KR
South Korea
Prior art keywords
tin
aqueous composition
paragraph
ethylene oxide
alkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020207031530A
Other languages
English (en)
Korean (ko)
Other versions
KR20210002514A (ko
Inventor
알렉산더 플뤼겔
마르코 아르놀트
나디네 엥겔하르트
마르켈 파트릭 킨레
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20210002514A publication Critical patent/KR20210002514A/ko
Application granted granted Critical
Publication of KR102769982B1 publication Critical patent/KR102769982B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H01L24/11—
    • H01L24/13—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H01L2224/11462—
    • H01L2224/13014—
    • H01L2924/14—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231—Shapes
    • H10W72/232—Plan-view shape, i.e. in top view

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020207031530A 2018-04-20 2019-04-11 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물 Active KR102769982B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP18168462 2018-04-20
EP18168462.2 2018-04-20
PCT/EP2019/059344 WO2019201753A1 (en) 2018-04-20 2019-04-11 Composition for tin or tin alloy electroplating comprising suppressing agent

Publications (2)

Publication Number Publication Date
KR20210002514A KR20210002514A (ko) 2021-01-08
KR102769982B1 true KR102769982B1 (ko) 2025-02-18

Family

ID=62044554

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207031530A Active KR102769982B1 (ko) 2018-04-20 2019-04-11 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물

Country Status (9)

Country Link
US (2) US11242606B2 (https=)
EP (1) EP3781729B1 (https=)
JP (1) JP2021522410A (https=)
KR (1) KR102769982B1 (https=)
CN (1) CN112135929B (https=)
IL (1) IL278024A (https=)
SG (1) SG11202009106XA (https=)
TW (1) TWI813670B (https=)
WO (1) WO2019201753A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4437167A1 (en) 2021-11-22 2024-10-02 Basf Se Composition for tin or tin alloy electroplating comprising a pyrazole-type antioxidant
KR102568529B1 (ko) * 2022-11-25 2023-08-22 주식회사 호진플라텍 보이드 생성이 억제되고 두께편차가 개선된 웨이퍼 범프용 주석 전기 도금액
KR20250124510A (ko) * 2024-02-13 2025-08-20 한국생산기술연구원 솔더 범프용 주석 도금액

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010115757A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US20120027948A1 (en) 2009-04-07 2012-02-02 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US20150122662A1 (en) 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
US20150122661A1 (en) 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4135991A (en) 1977-08-12 1979-01-23 R. O. Hull & Company, Inc. Bath and method for electroplating tin and/or lead
GB1567235A (en) 1978-05-15 1980-05-14 Pmd Chemicals Ltd Electrodeposition of tin or tin/lead alloys
US4871429A (en) 1981-09-11 1989-10-03 Learonal, Inc Limiting tin sludge formation in tin or tin/lead electroplating solutions
US5174887A (en) 1987-12-10 1992-12-29 Learonal, Inc. High speed electroplating of tinplate
JP3301707B2 (ja) 1997-01-20 2002-07-15 ディップソール株式会社 錫−銀合金酸性電気めっき浴
JP4296358B2 (ja) 1998-01-21 2009-07-15 石原薬品株式会社 銀及び銀合金メッキ浴
US7628903B1 (en) 2000-05-02 2009-12-08 Ishihara Chemical Co., Ltd. Silver and silver alloy plating bath
US6818545B2 (en) 2001-03-05 2004-11-16 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
TWI245402B (en) 2002-01-07 2005-12-11 Megic Corp Rod soldering structure and manufacturing process thereof
EP1342817A3 (en) * 2002-03-05 2006-05-24 Shipley Co. L.L.C. Limiting the loss of tin through oxidation in tin or tin alloy electroplating bath solutions
TWI353395B (en) * 2003-12-31 2011-12-01 Microfabrica Inc Method and apparatus for maintaining parallelism o
TWI240979B (en) 2004-10-28 2005-10-01 Advanced Semiconductor Eng Bumping process
KR100921919B1 (ko) 2007-11-16 2009-10-16 (주)화백엔지니어링 반도체 칩에 형성되는 구리기둥-주석범프 및 그의 형성방법
JP5583894B2 (ja) 2008-06-12 2014-09-03 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 電気錫めっき液および電気錫めっき方法
EP2199315B1 (en) 2008-12-19 2013-12-11 Basf Se Composition for metal electroplating comprising leveling agent
RU2529607C2 (ru) * 2009-04-07 2014-09-27 Басф Се Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов
EP2504396B1 (en) * 2009-11-27 2021-02-24 Basf Se Composition for copper electroplating comprising leveling agent
US8262895B2 (en) * 2010-03-15 2012-09-11 Rohm And Haas Electronic Materials Llc Plating bath and method
EP2655457B1 (en) * 2010-12-21 2019-04-10 Basf Se Composition for metal electroplating comprising leveling agent
US8888984B2 (en) * 2012-02-09 2014-11-18 Rohm And Haas Electronic Materials Llc Plating bath and method
US8980077B2 (en) 2012-03-30 2015-03-17 Rohm And Haas Electronic Materials Llc Plating bath and method
RU2015121797A (ru) * 2012-11-09 2017-01-10 Басф Се Композиция для электролитического осаждения металла, содержащая выравнивающий агент
JP6133056B2 (ja) * 2012-12-27 2017-05-24 ローム・アンド・ハース電子材料株式会社 スズまたはスズ合金めっき液
JP2015193916A (ja) * 2014-03-18 2015-11-05 上村工業株式会社 錫または錫合金の電気めっき浴、およびバンプの製造方法
EP3177671A1 (en) 2014-08-06 2017-06-14 Basf Se Improved process for preparing polymeric, ionic imidazolium compounds
CN107531859B (zh) * 2015-04-28 2020-02-14 罗门哈斯电子材料有限责任公司 作为电镀浴添加剂的双酸酐与二胺的反应产物
US10988852B2 (en) * 2015-10-27 2021-04-27 Rohm And Haas Electronic Materials Llc Method of electroplating copper into a via on a substrate from an acid copper electroplating bath
JP2019503420A (ja) 2016-01-12 2019-02-07 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ モノアルデヒドを使用しない又はモノアルデヒドをほぼ使用しない高分子イミダゾリウム化合物の製造方法
US11926918B2 (en) * 2016-12-20 2024-03-12 Basf Se Composition for metal plating comprising suppressing agent for void free filing
US11535946B2 (en) 2017-06-01 2022-12-27 Basf Se Composition for tin or tin alloy electroplating comprising leveling agent

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010115757A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US20120027948A1 (en) 2009-04-07 2012-02-02 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US20150122662A1 (en) 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method
US20150122661A1 (en) 2013-11-05 2015-05-07 Rohm And Haas Electronic Materials Llc Plating bath and method

Also Published As

Publication number Publication date
IL278024A (en) 2020-11-30
KR20210002514A (ko) 2021-01-08
US20210180201A1 (en) 2021-06-17
CN112135929A (zh) 2020-12-25
CN112135929B (zh) 2023-12-15
US20220119972A1 (en) 2022-04-21
EP3781729B1 (en) 2024-09-25
US11242606B2 (en) 2022-02-08
JP2021522410A (ja) 2021-08-30
EP3781729A1 (en) 2021-02-24
WO2019201753A1 (en) 2019-10-24
US11840771B2 (en) 2023-12-12
TWI813670B (zh) 2023-09-01
SG11202009106XA (en) 2020-11-27
TW201943895A (zh) 2019-11-16

Similar Documents

Publication Publication Date Title
KR102457310B1 (ko) 무-보이드 충전을 위한 억제 작용제를 포함하는 금속 도금용 조성물
EP3631051B1 (en) Composition for tin alloy electroplating comprising leveling agent
US11840771B2 (en) Composition for tin or tin alloy electroplating comprising suppressing agent
TWI899105B (zh) 用於錫銀合金電鍍的包含錯合劑的組成物
KR102653074B1 (ko) 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000