KR102762193B1 - 플라즈마 에칭 방법 - Google Patents

플라즈마 에칭 방법 Download PDF

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Publication number
KR102762193B1
KR102762193B1 KR1020180131093A KR20180131093A KR102762193B1 KR 102762193 B1 KR102762193 B1 KR 102762193B1 KR 1020180131093 A KR1020180131093 A KR 1020180131093A KR 20180131093 A KR20180131093 A KR 20180131093A KR 102762193 B1 KR102762193 B1 KR 102762193B1
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South Korea
Prior art keywords
etching
film
frequency power
metal
plasma
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KR1020180131093A
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Korean (ko)
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KR20190051817A (ko
Inventor
타카유키 가츠누마
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도쿄엘렉트론가부시키가이샤
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Publication of KR20190051817A publication Critical patent/KR20190051817A/ko
Priority to KR1020250008709A priority Critical patent/KR20250016413A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H01L21/3065—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H01L21/31116—
    • H01L21/32136—
    • H01L21/67069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
KR1020180131093A 2017-11-07 2018-10-30 플라즈마 에칭 방법 Active KR102762193B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020250008709A KR20250016413A (ko) 2017-11-07 2025-01-21 플라즈마 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017214313A JP6833657B2 (ja) 2017-11-07 2017-11-07 基板をプラズマエッチングする方法
JPJP-P-2017-214313 2017-11-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020250008709A Division KR20250016413A (ko) 2017-11-07 2025-01-21 플라즈마 처리 장치

Publications (2)

Publication Number Publication Date
KR20190051817A KR20190051817A (ko) 2019-05-15
KR102762193B1 true KR102762193B1 (ko) 2025-02-07

Family

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Application Number Title Priority Date Filing Date
KR1020180131093A Active KR102762193B1 (ko) 2017-11-07 2018-10-30 플라즈마 에칭 방법
KR1020250008709A Pending KR20250016413A (ko) 2017-11-07 2025-01-21 플라즈마 처리 장치

Family Applications After (1)

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KR1020250008709A Pending KR20250016413A (ko) 2017-11-07 2025-01-21 플라즈마 처리 장치

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US (2) US10854470B2 (https=)
JP (1) JP6833657B2 (https=)
KR (2) KR102762193B1 (https=)
CN (2) CN116705602A (https=)
TW (1) TWI789449B (https=)

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JP7308110B2 (ja) * 2019-09-17 2023-07-13 東京エレクトロン株式会社 シリコン酸化膜をエッチングする方法及びプラズマ処理装置
GB201919220D0 (en) * 2019-12-23 2020-02-05 Spts Technologies Ltd Method of plasma etching
JP7557969B2 (ja) * 2020-01-29 2024-09-30 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
CN111739795B (zh) * 2020-06-24 2023-08-18 北京北方华创微电子装备有限公司 刻蚀方法
US12142459B2 (en) * 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
JP7709871B2 (ja) * 2020-09-16 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP7603635B2 (ja) * 2021-07-02 2024-12-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12374532B2 (en) * 2022-04-11 2025-07-29 Hitachi High-Tech Corporation Plasma processing method
CN117546276A (zh) * 2022-04-18 2024-02-09 株式会社日立高新技术 等离子体处理方法
KR102815089B1 (ko) * 2022-04-28 2025-06-04 주식회사 히타치하이테크 에칭 방법
US12009218B2 (en) * 2022-05-06 2024-06-11 Applied Materials, Inc. Pulsed etch process
JP7756056B2 (ja) * 2022-08-25 2025-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2024151446A (ja) 2023-04-12 2024-10-25 信越化学工業株式会社 オニウム塩、レジスト組成物、及びパターン形成方法
JP2024162373A (ja) 2023-05-10 2024-11-21 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
JP2025152739A (ja) * 2024-03-28 2025-10-10 株式会社Kokusai Electric 処理方法、半導体装置の製造方法、プログラム及び処理装置

Citations (2)

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JP2012142495A (ja) * 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
JP2014029981A (ja) * 2012-02-03 2014-02-13 Dainippon Printing Co Ltd ナノインプリント用テンプレートの製造方法

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JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP4176365B2 (ja) 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
US6942813B2 (en) * 2003-03-05 2005-09-13 Applied Materials, Inc. Method of etching magnetic and ferroelectric materials using a pulsed bias source
KR102023784B1 (ko) * 2011-03-04 2019-09-20 도쿄엘렉트론가부시키가이샤 질화규소막 에칭 방법
JP2014225501A (ja) * 2013-05-15 2014-12-04 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6185305B2 (ja) * 2013-06-28 2017-08-23 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
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JP2014029981A (ja) * 2012-02-03 2014-02-13 Dainippon Printing Co Ltd ナノインプリント用テンプレートの製造方法

Also Published As

Publication number Publication date
CN116705602A (zh) 2023-09-05
US10854470B2 (en) 2020-12-01
TW201923900A (zh) 2019-06-16
US20210050222A1 (en) 2021-02-18
CN109755123B (zh) 2023-08-11
JP6833657B2 (ja) 2021-02-24
US20190139781A1 (en) 2019-05-09
JP2019087626A (ja) 2019-06-06
TWI789449B (zh) 2023-01-11
KR20190051817A (ko) 2019-05-15
US12154792B2 (en) 2024-11-26
KR20250016413A (ko) 2025-02-03
CN109755123A (zh) 2019-05-14

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