TWI789449B - 基板之電漿蝕刻方法 - Google Patents

基板之電漿蝕刻方法 Download PDF

Info

Publication number
TWI789449B
TWI789449B TW107138706A TW107138706A TWI789449B TW I789449 B TWI789449 B TW I789449B TW 107138706 A TW107138706 A TW 107138706A TW 107138706 A TW107138706 A TW 107138706A TW I789449 B TWI789449 B TW I789449B
Authority
TW
Taiwan
Prior art keywords
film
metal
plasma
gas
etching
Prior art date
Application number
TW107138706A
Other languages
English (en)
Chinese (zh)
Other versions
TW201923900A (zh
Inventor
勝沼隆幸
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201923900A publication Critical patent/TW201923900A/zh
Application granted granted Critical
Publication of TWI789449B publication Critical patent/TWI789449B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
TW107138706A 2017-11-07 2018-11-01 基板之電漿蝕刻方法 TWI789449B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017214313A JP6833657B2 (ja) 2017-11-07 2017-11-07 基板をプラズマエッチングする方法
JP2017-214313 2017-11-07

Publications (2)

Publication Number Publication Date
TW201923900A TW201923900A (zh) 2019-06-16
TWI789449B true TWI789449B (zh) 2023-01-11

Family

ID=66328877

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107138706A TWI789449B (zh) 2017-11-07 2018-11-01 基板之電漿蝕刻方法

Country Status (5)

Country Link
US (2) US10854470B2 (https=)
JP (1) JP6833657B2 (https=)
KR (2) KR102762193B1 (https=)
CN (2) CN116705602A (https=)
TW (1) TWI789449B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7308110B2 (ja) * 2019-09-17 2023-07-13 東京エレクトロン株式会社 シリコン酸化膜をエッチングする方法及びプラズマ処理装置
GB201919220D0 (en) * 2019-12-23 2020-02-05 Spts Technologies Ltd Method of plasma etching
JP7557969B2 (ja) * 2020-01-29 2024-09-30 東京エレクトロン株式会社 エッチング方法、基板処理装置、及び基板処理システム
CN111739795B (zh) * 2020-06-24 2023-08-18 北京北方华创微电子装备有限公司 刻蚀方法
US12142459B2 (en) * 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
JP7709871B2 (ja) * 2020-09-16 2025-07-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US20220165578A1 (en) * 2020-11-25 2022-05-26 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP7603635B2 (ja) * 2021-07-02 2024-12-20 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12374532B2 (en) * 2022-04-11 2025-07-29 Hitachi High-Tech Corporation Plasma processing method
CN117546276A (zh) * 2022-04-18 2024-02-09 株式会社日立高新技术 等离子体处理方法
KR102815089B1 (ko) * 2022-04-28 2025-06-04 주식회사 히타치하이테크 에칭 방법
US12009218B2 (en) * 2022-05-06 2024-06-11 Applied Materials, Inc. Pulsed etch process
JP7756056B2 (ja) * 2022-08-25 2025-10-17 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
JP2024151446A (ja) 2023-04-12 2024-10-25 信越化学工業株式会社 オニウム塩、レジスト組成物、及びパターン形成方法
JP2024162373A (ja) 2023-05-10 2024-11-21 信越化学工業株式会社 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法
JP2025152739A (ja) * 2024-03-28 2025-10-10 株式会社Kokusai Electric 処理方法、半導体装置の製造方法、プログラム及び処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012142495A (ja) * 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
US20170178899A1 (en) * 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4153606B2 (ja) * 1998-10-22 2008-09-24 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP4176365B2 (ja) 2002-03-25 2008-11-05 東京エレクトロン株式会社 プラズマエッチング方法
US6942813B2 (en) * 2003-03-05 2005-09-13 Applied Materials, Inc. Method of etching magnetic and ferroelectric materials using a pulsed bias source
KR102023784B1 (ko) * 2011-03-04 2019-09-20 도쿄엘렉트론가부시키가이샤 질화규소막 에칭 방법
JP6127535B2 (ja) * 2012-02-03 2017-05-17 大日本印刷株式会社 ナノインプリント用テンプレートの製造方法
JP2014225501A (ja) * 2013-05-15 2014-12-04 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP6185305B2 (ja) * 2013-06-28 2017-08-23 東京エレクトロン株式会社 プラズマエッチング方法およびプラズマエッチング装置
JP6512962B2 (ja) * 2014-09-17 2019-05-15 東京エレクトロン株式会社 プラズマ処理装置
US9806252B2 (en) * 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9543148B1 (en) * 2015-09-01 2017-01-10 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
US9824896B2 (en) * 2015-11-04 2017-11-21 Lam Research Corporation Methods and systems for advanced ion control for etching processes
JP2017098323A (ja) 2015-11-19 2017-06-01 東京エレクトロン株式会社 プラズマエッチング方法
US9991128B2 (en) * 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US10629435B2 (en) * 2016-07-29 2020-04-21 Lam Research Corporation Doped ALD films for semiconductor patterning applications
US10128116B2 (en) * 2016-10-17 2018-11-13 Lam Research Corporation Integrated direct dielectric and metal deposition
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012142495A (ja) * 2011-01-05 2012-07-26 Ulvac Japan Ltd プラズマエッチング方法及びプラズマエッチング装置
US20170178899A1 (en) * 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures

Also Published As

Publication number Publication date
CN116705602A (zh) 2023-09-05
US10854470B2 (en) 2020-12-01
KR102762193B1 (ko) 2025-02-07
TW201923900A (zh) 2019-06-16
US20210050222A1 (en) 2021-02-18
CN109755123B (zh) 2023-08-11
JP6833657B2 (ja) 2021-02-24
US20190139781A1 (en) 2019-05-09
JP2019087626A (ja) 2019-06-06
KR20190051817A (ko) 2019-05-15
US12154792B2 (en) 2024-11-26
KR20250016413A (ko) 2025-02-03
CN109755123A (zh) 2019-05-14

Similar Documents

Publication Publication Date Title
TWI789449B (zh) 基板之電漿蝕刻方法
TWI731101B (zh) 蝕刻處理方法
TWI665726B (zh) 電漿蝕刻方法及電漿蝕刻裝置
TWI618145B (zh) 電漿蝕刻方法及電漿蝕刻裝置
KR102515764B1 (ko) 에칭 처리 방법
KR102663567B1 (ko) 플라즈마 에칭 방법
CN100521111C (zh) 等离子体蚀刻方法
US12051595B2 (en) Plasma processing method and plasma processing apparatus
TWI766866B (zh) 蝕刻方法
JP7792538B2 (ja) 基板処理装置
CN113035708B (zh) 基片处理方法和基片处理装置
WO2003056617A1 (en) Etching method and plasma etching device
JP7278456B2 (ja) プラズマ処理装置
JP7418632B2 (ja) プラズマ処理装置
US20250331267A1 (en) Self-limited etching of low-k materials
JP7145819B2 (ja) エッチング方法
JP2025100297A (ja) 半導体基板を処理する方法および装置