JP6833657B2 - 基板をプラズマエッチングする方法 - Google Patents
基板をプラズマエッチングする方法 Download PDFInfo
- Publication number
- JP6833657B2 JP6833657B2 JP2017214313A JP2017214313A JP6833657B2 JP 6833657 B2 JP6833657 B2 JP 6833657B2 JP 2017214313 A JP2017214313 A JP 2017214313A JP 2017214313 A JP2017214313 A JP 2017214313A JP 6833657 B2 JP6833657 B2 JP 6833657B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- plasma
- metal
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017214313A JP6833657B2 (ja) | 2017-11-07 | 2017-11-07 | 基板をプラズマエッチングする方法 |
| KR1020180131093A KR102762193B1 (ko) | 2017-11-07 | 2018-10-30 | 플라즈마 에칭 방법 |
| US16/176,235 US10854470B2 (en) | 2017-11-07 | 2018-10-31 | Plasma etching method |
| TW107138706A TWI789449B (zh) | 2017-11-07 | 2018-11-01 | 基板之電漿蝕刻方法 |
| CN201811317005.1A CN109755123B (zh) | 2017-11-07 | 2018-11-07 | 等离子体蚀刻方法 |
| CN202310912618.4A CN116705602A (zh) | 2017-11-07 | 2018-11-07 | 等离子体处理装置 |
| US17/084,938 US12154792B2 (en) | 2017-11-07 | 2020-10-30 | Plasma etching method |
| KR1020250008709A KR20250016413A (ko) | 2017-11-07 | 2025-01-21 | 플라즈마 처리 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017214313A JP6833657B2 (ja) | 2017-11-07 | 2017-11-07 | 基板をプラズマエッチングする方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019087626A JP2019087626A (ja) | 2019-06-06 |
| JP2019087626A5 JP2019087626A5 (https=) | 2020-08-13 |
| JP6833657B2 true JP6833657B2 (ja) | 2021-02-24 |
Family
ID=66328877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017214313A Active JP6833657B2 (ja) | 2017-11-07 | 2017-11-07 | 基板をプラズマエッチングする方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10854470B2 (https=) |
| JP (1) | JP6833657B2 (https=) |
| KR (2) | KR102762193B1 (https=) |
| CN (2) | CN116705602A (https=) |
| TW (1) | TWI789449B (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7308110B2 (ja) * | 2019-09-17 | 2023-07-13 | 東京エレクトロン株式会社 | シリコン酸化膜をエッチングする方法及びプラズマ処理装置 |
| GB201919220D0 (en) * | 2019-12-23 | 2020-02-05 | Spts Technologies Ltd | Method of plasma etching |
| JP7557969B2 (ja) * | 2020-01-29 | 2024-09-30 | 東京エレクトロン株式会社 | エッチング方法、基板処理装置、及び基板処理システム |
| CN111739795B (zh) * | 2020-06-24 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 刻蚀方法 |
| US12142459B2 (en) * | 2020-09-08 | 2024-11-12 | Applied Materials, Inc. | Single chamber flowable film formation and treatments |
| JP7709871B2 (ja) * | 2020-09-16 | 2025-07-17 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US20220165578A1 (en) * | 2020-11-25 | 2022-05-26 | Tokyo Electron Limited | Substrate processing method and substrate processing apparatus |
| JP7603635B2 (ja) * | 2021-07-02 | 2024-12-20 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| US12374532B2 (en) * | 2022-04-11 | 2025-07-29 | Hitachi High-Tech Corporation | Plasma processing method |
| CN117546276A (zh) * | 2022-04-18 | 2024-02-09 | 株式会社日立高新技术 | 等离子体处理方法 |
| KR102815089B1 (ko) * | 2022-04-28 | 2025-06-04 | 주식회사 히타치하이테크 | 에칭 방법 |
| US12009218B2 (en) * | 2022-05-06 | 2024-06-11 | Applied Materials, Inc. | Pulsed etch process |
| JP7756056B2 (ja) * | 2022-08-25 | 2025-10-17 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
| JP2024151446A (ja) | 2023-04-12 | 2024-10-25 | 信越化学工業株式会社 | オニウム塩、レジスト組成物、及びパターン形成方法 |
| JP2024162373A (ja) | 2023-05-10 | 2024-11-21 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト組成物及びレジストパターン形成方法 |
| JP2025152739A (ja) * | 2024-03-28 | 2025-10-10 | 株式会社Kokusai Electric | 処理方法、半導体装置の製造方法、プログラム及び処理装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4153606B2 (ja) * | 1998-10-22 | 2008-09-24 | 東京エレクトロン株式会社 | プラズマエッチング方法およびプラズマエッチング装置 |
| JP4176365B2 (ja) | 2002-03-25 | 2008-11-05 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US6942813B2 (en) * | 2003-03-05 | 2005-09-13 | Applied Materials, Inc. | Method of etching magnetic and ferroelectric materials using a pulsed bias source |
| JP2012142495A (ja) * | 2011-01-05 | 2012-07-26 | Ulvac Japan Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
| KR102023784B1 (ko) * | 2011-03-04 | 2019-09-20 | 도쿄엘렉트론가부시키가이샤 | 질화규소막 에칭 방법 |
| JP6127535B2 (ja) * | 2012-02-03 | 2017-05-17 | 大日本印刷株式会社 | ナノインプリント用テンプレートの製造方法 |
| JP2014225501A (ja) * | 2013-05-15 | 2014-12-04 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP6185305B2 (ja) * | 2013-06-28 | 2017-08-23 | 東京エレクトロン株式会社 | プラズマエッチング方法およびプラズマエッチング装置 |
| JP6512962B2 (ja) * | 2014-09-17 | 2019-05-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9806252B2 (en) * | 2015-04-20 | 2017-10-31 | Lam Research Corporation | Dry plasma etch method to pattern MRAM stack |
| US9543148B1 (en) * | 2015-09-01 | 2017-01-10 | Lam Research Corporation | Mask shrink layer for high aspect ratio dielectric etch |
| US9824896B2 (en) * | 2015-11-04 | 2017-11-21 | Lam Research Corporation | Methods and systems for advanced ion control for etching processes |
| JP2017098323A (ja) | 2015-11-19 | 2017-06-01 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| US20170178899A1 (en) * | 2015-12-18 | 2017-06-22 | Lam Research Corporation | Directional deposition on patterned structures |
| US9991128B2 (en) * | 2016-02-05 | 2018-06-05 | Lam Research Corporation | Atomic layer etching in continuous plasma |
| US10629435B2 (en) * | 2016-07-29 | 2020-04-21 | Lam Research Corporation | Doped ALD films for semiconductor patterning applications |
| US10128116B2 (en) * | 2016-10-17 | 2018-11-13 | Lam Research Corporation | Integrated direct dielectric and metal deposition |
| US11062897B2 (en) * | 2017-06-09 | 2021-07-13 | Lam Research Corporation | Metal doped carbon based hard mask removal in semiconductor fabrication |
-
2017
- 2017-11-07 JP JP2017214313A patent/JP6833657B2/ja active Active
-
2018
- 2018-10-30 KR KR1020180131093A patent/KR102762193B1/ko active Active
- 2018-10-31 US US16/176,235 patent/US10854470B2/en active Active
- 2018-11-01 TW TW107138706A patent/TWI789449B/zh active
- 2018-11-07 CN CN202310912618.4A patent/CN116705602A/zh active Pending
- 2018-11-07 CN CN201811317005.1A patent/CN109755123B/zh active Active
-
2020
- 2020-10-30 US US17/084,938 patent/US12154792B2/en active Active
-
2025
- 2025-01-21 KR KR1020250008709A patent/KR20250016413A/ko active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN116705602A (zh) | 2023-09-05 |
| US10854470B2 (en) | 2020-12-01 |
| KR102762193B1 (ko) | 2025-02-07 |
| TW201923900A (zh) | 2019-06-16 |
| US20210050222A1 (en) | 2021-02-18 |
| CN109755123B (zh) | 2023-08-11 |
| US20190139781A1 (en) | 2019-05-09 |
| JP2019087626A (ja) | 2019-06-06 |
| TWI789449B (zh) | 2023-01-11 |
| KR20190051817A (ko) | 2019-05-15 |
| US12154792B2 (en) | 2024-11-26 |
| KR20250016413A (ko) | 2025-02-03 |
| CN109755123A (zh) | 2019-05-14 |
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