KR102761027B1 - 순방향 파라미터 보정 및 강화된 역방향 엔지니어링을 사용한 코팅 제어 - Google Patents

순방향 파라미터 보정 및 강화된 역방향 엔지니어링을 사용한 코팅 제어 Download PDF

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KR102761027B1
KR102761027B1 KR1020217012772A KR20217012772A KR102761027B1 KR 102761027 B1 KR102761027 B1 KR 102761027B1 KR 1020217012772 A KR1020217012772 A KR 1020217012772A KR 20217012772 A KR20217012772 A KR 20217012772A KR 102761027 B1 KR102761027 B1 KR 102761027B1
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South Korea
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run
runs
coating
target
information
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Korean (ko)
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KR20210063424A (ko
Inventor
마르쿠스 케이. 틸시
조지 제이. 오큰푸스
마리우스 그리고니스
앤드류 클라크
동공 펭
인시앙 시아
자오 유안
에릭 니뱅크
닐 핑커톤
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비아비 솔루션즈 아이엔씨.
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters
    • G02B5/285—Interference filters comprising deposited thin solid films

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
KR1020217012772A 2018-09-28 2018-09-28 순방향 파라미터 보정 및 강화된 역방향 엔지니어링을 사용한 코팅 제어 Active KR102761027B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/108297 WO2020062016A1 (en) 2018-09-28 2018-09-28 Coating control using forward parameter correction and enhanced reverse engineering

Publications (2)

Publication Number Publication Date
KR20210063424A KR20210063424A (ko) 2021-06-01
KR102761027B1 true KR102761027B1 (ko) 2025-01-31

Family

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KR1020217012772A Active KR102761027B1 (ko) 2018-09-28 2018-09-28 순방향 파라미터 보정 및 강화된 역방향 엔지니어링을 사용한 코팅 제어

Country Status (7)

Country Link
US (1) US11692263B2 (enExample)
EP (1) EP3841227A4 (enExample)
JP (2) JP7724153B2 (enExample)
KR (1) KR102761027B1 (enExample)
CN (1) CN112752865A (enExample)
TW (1) TWI793371B (enExample)
WO (1) WO2020062016A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11481524B2 (en) * 2020-06-26 2022-10-25 Microsoft Technology Licensing, Llc Conformal coating iteration
WO2022240385A1 (en) 2021-05-10 2022-11-17 Carl Zeiss Vision International Gmbh A method for calibrating optical coating apparatuses
US12526655B2 (en) 2023-07-10 2026-01-13 T-Mobile Usa, Inc. Managing bandwidth consumption associated with multiple interaction channels of a wireless telecommunication network related to information campaigns

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002294444A (ja) * 2001-03-30 2002-10-09 Shibaura Mechatronics Corp 成膜装置および成膜装置用プログラム

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US5911856A (en) 1993-09-03 1999-06-15 Canon Kabushiki Kaisha Method for forming thin film
JPH0772307A (ja) * 1993-09-03 1995-03-17 Canon Inc 薄膜形成方法及び装置
US5772861A (en) 1995-10-16 1998-06-30 Viratec Thin Films, Inc. System for evaluating thin film coatings
US6217720B1 (en) * 1997-06-03 2001-04-17 National Research Council Of Canada Multi-layer reactive sputtering method with reduced stabilization time
IL132639A (en) * 1999-10-28 2003-11-23 Nova Measuring Instr Ltd Optical measurements of patterned structures
AU2001259504A1 (en) 2000-05-24 2001-12-03 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
JP3965935B2 (ja) 2000-07-26 2007-08-29 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
US7324865B1 (en) * 2001-05-09 2008-01-29 Advanced Micro Devices, Inc. Run-to-run control method for automated control of metal deposition processes
DE10124609B4 (de) 2001-05-17 2012-12-27 Aixtron Se Verfahren zum Abscheiden aktiver Schichten auf Substraten
JP4327439B2 (ja) 2002-10-31 2009-09-09 株式会社アルバック 誘電体多層膜の製造装置
US20060196765A1 (en) 2005-03-07 2006-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Metallization target optimization method providing enhanced metallization layer uniformity
JP2007072307A (ja) 2005-09-08 2007-03-22 Matsushita Electric Works Ltd 光モジュール
JP4929842B2 (ja) 2006-05-30 2012-05-09 ソニー株式会社 Ｎｄフィルターおよびｎｄフィルターの製造方法
DK1970465T3 (da) * 2007-03-13 2013-10-07 Jds Uniphase Corp Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks
CN102191475B (zh) * 2011-04-15 2012-10-10 中国科学院上海光学精密机械研究所 提高薄膜光谱性能的膜厚监控方法
CN102912306B (zh) * 2012-10-20 2014-04-16 大连理工大学 计算机自动控制的高功率脉冲磁控溅射设备及工艺
CN103540906B (zh) * 2013-09-29 2015-07-29 中国科学院上海光学精密机械研究所 光控-晶控综合膜厚监控方法
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JP6619934B2 (ja) 2015-01-07 2019-12-11 日東電工株式会社 多層光学膜の膜厚制御方法、多層光学膜の製造方法および多層光学膜のスパッタ装置
JP6822807B2 (ja) 2015-09-30 2021-01-27 キヤノンメディカルシステムズ株式会社 Ｘ線コンピュータ断層撮影装置

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Also Published As

Publication number Publication date
CN112752865A (zh) 2021-05-04
WO2020062016A1 (en) 2020-04-02
TW202031919A (zh) 2020-09-01
KR20210063424A (ko) 2021-06-01
US20210332474A1 (en) 2021-10-28
JP2022511320A (ja) 2022-01-31
TWI793371B (zh) 2023-02-21
JP7724153B2 (ja) 2025-08-15
US11692263B2 (en) 2023-07-04
EP3841227A4 (en) 2021-10-06
JP2023134537A (ja) 2023-09-27
EP3841227A1 (en) 2021-06-30

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