KR102750908B1 - 정전척 - Google Patents

정전척 Download PDF

Info

Publication number
KR102750908B1
KR102750908B1 KR1020190117683A KR20190117683A KR102750908B1 KR 102750908 B1 KR102750908 B1 KR 102750908B1 KR 1020190117683 A KR1020190117683 A KR 1020190117683A KR 20190117683 A KR20190117683 A KR 20190117683A KR 102750908 B1 KR102750908 B1 KR 102750908B1
Authority
KR
South Korea
Prior art keywords
porous
porous portion
dielectric substrate
ceramic dielectric
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190117683A
Other languages
English (en)
Korean (ko)
Other versions
KR20200049511A (ko
Inventor
준 시라이시
슈이치로 사이간
타츠야 모리
마사히로 와타나베
Original Assignee
토토 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 토토 가부시키가이샤 filed Critical 토토 가부시키가이샤
Publication of KR20200049511A publication Critical patent/KR20200049511A/ko
Priority to KR1020240199674A priority Critical patent/KR102819118B1/ko
Application granted granted Critical
Publication of KR102750908B1 publication Critical patent/KR102750908B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/6833—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H01L21/6835—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
KR1020190117683A 2018-10-30 2019-09-24 정전척 Active KR102750908B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020240199674A KR102819118B1 (ko) 2018-10-30 2024-12-30 정전척

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2018-203749 2018-10-30
JP2018203749 2018-10-30
JPJP-P-2019-166033 2019-09-12
JP2019166033A JP7002014B2 (ja) 2018-10-30 2019-09-12 静電チャック

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020240199674A Division KR102819118B1 (ko) 2018-10-30 2024-12-30 정전척

Publications (2)

Publication Number Publication Date
KR20200049511A KR20200049511A (ko) 2020-05-08
KR102750908B1 true KR102750908B1 (ko) 2025-01-09

Family

ID=70549670

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020190117683A Active KR102750908B1 (ko) 2018-10-30 2019-09-24 정전척
KR1020240199674A Active KR102819118B1 (ko) 2018-10-30 2024-12-30 정전척

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020240199674A Active KR102819118B1 (ko) 2018-10-30 2024-12-30 정전척

Country Status (5)

Country Link
US (2) US11309204B2 (https=)
JP (2) JP7002014B2 (https=)
KR (2) KR102750908B1 (https=)
CN (1) CN118737928A (https=)
TW (2) TWI806270B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111668150B (zh) * 2019-03-05 2024-06-28 Toto株式会社 静电吸盘及处理装置
JP7433857B2 (ja) * 2019-11-25 2024-02-20 京セラ株式会社 試料保持具
WO2021241645A1 (ja) * 2020-05-28 2021-12-02 京セラ株式会社 通気性プラグ、基板支持アセンブリおよびシャワープレート
JP7330139B2 (ja) * 2020-06-18 2023-08-21 日立造船株式会社 加圧用吸着台およびこれを具備する加圧装置
JP7382978B2 (ja) * 2021-02-04 2023-11-17 日本碍子株式会社 半導体製造装置用部材及びプラグ
JP7558886B2 (ja) * 2021-05-17 2024-10-01 日本特殊陶業株式会社 保持装置
CN115732387A (zh) 2021-08-31 2023-03-03 Toto株式会社 静电吸盘以及处理装置
JP7255659B1 (ja) * 2021-11-25 2023-04-11 住友大阪セメント株式会社 静電チャック装置
US12341048B2 (en) * 2021-11-29 2025-06-24 Applied Materials, Inc. Porous plug for electrostatic chuck gas delivery
JP7620578B2 (ja) * 2022-01-07 2025-01-23 日本碍子株式会社 半導体製造装置用部材
JP7791723B2 (ja) * 2022-01-20 2025-12-24 新光電気工業株式会社 基板固定装置
JP7569343B2 (ja) * 2022-01-21 2024-10-17 日本碍子株式会社 半導体製造装置用部材
JP7569342B2 (ja) * 2022-01-21 2024-10-17 日本碍子株式会社 半導体製造装置用部材
US11794296B2 (en) * 2022-02-03 2023-10-24 Applied Materials, Inc. Electrostatic chuck with porous plug
KR20240159576A (ko) * 2022-03-08 2024-11-05 램 리써치 코포레이션 정적 척의 세라믹 플레이트 및 금속 베이스플레이트를 본딩하기 위한 캡슐화된 압축 와셔
CN115632029B (zh) * 2022-12-22 2023-03-17 河北博特半导体设备科技有限公司 一种高精度晶圆承片台的陶瓷旋转台结构
JP7551828B1 (ja) 2023-04-21 2024-09-17 日本特殊陶業株式会社 保持装置
JP2026036959A (ja) * 2024-08-21 2026-03-06 住友大阪セメント株式会社 静電チャック部材、および静電チャック装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344766A (ja) 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2009158917A (ja) * 2007-09-28 2009-07-16 Intevac Inc 静電チャック装置
JP2009218592A (ja) * 2008-03-11 2009-09-24 Ngk Insulators Ltd 静電チャック
JP2013232640A (ja) 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
JP2014209615A (ja) 2013-03-29 2014-11-06 Toto株式会社 静電チャック
JP2017157726A (ja) 2016-03-03 2017-09-07 日本特殊陶業株式会社 保持装置および保持装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW561515B (en) * 2001-11-30 2003-11-11 Tokyo Electron Ltd Processing device, and gas discharge suppressing member
KR100505035B1 (ko) * 2003-11-17 2005-07-29 삼성전자주식회사 기판을 지지하기 위한 정전척
JP4390629B2 (ja) 2004-06-01 2009-12-24 Ｎｅｃエレクトロニクス株式会社 静電吸着装置およびプラズマ処理装置
JP5188696B2 (ja) * 2006-11-01 2013-04-24 株式会社日立ハイテクノロジーズ ウエハ載置用電極
US8336891B2 (en) * 2008-03-11 2012-12-25 Ngk Insulators, Ltd. Electrostatic chuck
JP5449750B2 (ja) 2008-11-19 2014-03-19 株式会社日本セラテック 静電チャックおよびその製造方法
JP5198226B2 (ja) * 2008-11-20 2013-05-15 東京エレクトロン株式会社 基板載置台および基板処理装置
JP6432474B2 (ja) * 2014-03-27 2018-12-05 Toto株式会社 静電チャック
US9805963B2 (en) * 2015-10-05 2017-10-31 Lam Research Corporation Electrostatic chuck with thermal choke
US10770270B2 (en) * 2016-06-07 2020-09-08 Applied Materials, Inc. High power electrostatic chuck with aperture-reducing plug in a gas hole
JP6722518B2 (ja) * 2016-06-09 2020-07-15 新光電気工業株式会社 焼結体及びその製造方法と静電チャック
JP6865145B2 (ja) * 2016-12-16 2021-04-28 日本特殊陶業株式会社 保持装置
JP6489277B1 (ja) * 2018-03-14 2019-03-27 Toto株式会社 静電チャック

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006344766A (ja) 2005-06-09 2006-12-21 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP2009158917A (ja) * 2007-09-28 2009-07-16 Intevac Inc 静電チャック装置
JP2009218592A (ja) * 2008-03-11 2009-09-24 Ngk Insulators Ltd 静電チャック
JP2013232640A (ja) 2012-04-27 2013-11-14 Ngk Insulators Ltd 半導体製造装置用部材
JP2014209615A (ja) 2013-03-29 2014-11-06 Toto株式会社 静電チャック
JP2017157726A (ja) 2016-03-03 2017-09-07 日本特殊陶業株式会社 保持装置および保持装置の製造方法

Also Published As

Publication number Publication date
JP7424362B2 (ja) 2024-01-30
JP7002014B2 (ja) 2022-01-20
TW202017095A (zh) 2020-05-01
KR20200049511A (ko) 2020-05-08
TWI751444B (zh) 2022-01-01
US11309204B2 (en) 2022-04-19
JP2020072261A (ja) 2020-05-07
US20200135528A1 (en) 2020-04-30
CN118737928A (zh) 2024-10-01
TW202213613A (zh) 2022-04-01
KR20250007482A (ko) 2025-01-14
US12014947B2 (en) 2024-06-18
JP2022031333A (ja) 2022-02-18
KR102819118B1 (ko) 2025-06-12
TWI806270B (zh) 2023-06-21
US20220199452A1 (en) 2022-06-23

Similar Documents

Publication Publication Date Title
KR102819118B1 (ko) 정전척
KR102204659B1 (ko) 정전 척
KR102000501B1 (ko) 정전 척
JP7441404B2 (ja) 静電チャック、および処理装置
JP7402411B2 (ja) 静電チャック
JP7412684B2 (ja) 静電チャック
CN111128838B (zh) 静电吸盘
JP7441402B2 (ja) 静電チャック、および処理装置
JP7441403B2 (ja) 静電チャック、および処理装置
CN110277343B (zh) 静电吸盘
CN111128837B (zh) 静电吸盘
JP6922874B2 (ja) 静電チャック

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PA0107 Divisional application

St.27 status event code: A-0-1-A10-A16-div-PA0107

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000