KR102717090B1 - 디지털 리소그래피 툴들을 위한 모델 기반 동적 포지션 보정 - Google Patents
디지털 리소그래피 툴들을 위한 모델 기반 동적 포지션 보정 Download PDFInfo
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- KR102717090B1 KR102717090B1 KR1020217029491A KR20217029491A KR102717090B1 KR 102717090 B1 KR102717090 B1 KR 102717090B1 KR 1020217029491 A KR1020217029491 A KR 1020217029491A KR 20217029491 A KR20217029491 A KR 20217029491A KR 102717090 B1 KR102717090 B1 KR 102717090B1
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- photolithography system
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- 230000006641 stabilisation Effects 0.000 claims abstract description 87
- 238000011105 stabilization Methods 0.000 claims abstract description 87
- 238000000206 photolithography Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 44
- 230000000694 effects Effects 0.000 claims description 23
- 238000005457 optimization Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000001052 transient effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- 238000012937 correction Methods 0.000 description 14
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- 230000008569 process Effects 0.000 description 4
- 238000010801 machine learning Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 229920001486 SU-8 photoresist Polymers 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7092—Signal processing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Signal Processing (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Vehicle Body Suspensions (AREA)
- Fluid-Damping Devices (AREA)
- Optical Communication System (AREA)
- Details Of Measuring And Other Instruments (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020247033611A KR20240151279A (ko) | 2019-02-15 | 2020-01-16 | 디지털 리소그래피 툴들을 위한 모델 기반 동적 포지션 보정 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/277,805 US10996572B2 (en) | 2019-02-15 | 2019-02-15 | Model based dynamic positional correction for digital lithography tools |
| US16/277,805 | 2019-02-15 | ||
| PCT/US2020/013861 WO2020167408A1 (en) | 2019-02-15 | 2020-01-16 | Model based dynamic positional correction for digital lithography tools |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247033611A Division KR20240151279A (ko) | 2019-02-15 | 2020-01-16 | 디지털 리소그래피 툴들을 위한 모델 기반 동적 포지션 보정 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210116707A KR20210116707A (ko) | 2021-09-27 |
| KR102717090B1 true KR102717090B1 (ko) | 2024-10-11 |
Family
ID=72040798
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217029491A Active KR102717090B1 (ko) | 2019-02-15 | 2020-01-16 | 디지털 리소그래피 툴들을 위한 모델 기반 동적 포지션 보정 |
| KR1020247033611A Pending KR20240151279A (ko) | 2019-02-15 | 2020-01-16 | 디지털 리소그래피 툴들을 위한 모델 기반 동적 포지션 보정 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247033611A Pending KR20240151279A (ko) | 2019-02-15 | 2020-01-16 | 디지털 리소그래피 툴들을 위한 모델 기반 동적 포지션 보정 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10996572B2 (enExample) |
| JP (3) | JP7292397B2 (enExample) |
| KR (2) | KR102717090B1 (enExample) |
| CN (2) | CN118092083A (enExample) |
| TW (2) | TWI754209B (enExample) |
| WO (1) | WO2020167408A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102263718B1 (ko) * | 2019-06-10 | 2021-06-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| US11481922B2 (en) * | 2020-04-07 | 2022-10-25 | Kla Corporation | Online navigational drift correction for metrology measurements |
| CN116540489A (zh) * | 2023-04-23 | 2023-08-04 | 上海华力集成电路制造有限公司 | 针对光刻中光罩热效应的修正方法 |
Citations (5)
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| JP2003107725A (ja) | 2001-09-27 | 2003-04-09 | Fuji Photo Film Co Ltd | 画像記録装置 |
| JP2004327807A (ja) | 2003-04-25 | 2004-11-18 | Canon Inc | 光学素子位置決め装置、それを用いた露光装置、デバイスの製造方法 |
| JP2005026439A (ja) | 2003-07-02 | 2005-01-27 | Hitachi High-Technologies Corp | 電子線描画装置 |
| WO2005083756A1 (ja) | 2004-03-01 | 2005-09-09 | Nikon Corporation | 事前計測処理方法、露光システム及び基板処理装置 |
| JP2014074837A (ja) | 2012-10-05 | 2014-04-24 | Dainippon Screen Mfg Co Ltd | 画像記録装置および画像記録方法 |
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| NL9000503A (nl) * | 1990-03-05 | 1991-10-01 | Asm Lithography Bv | Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat. |
| JP3048508B2 (ja) * | 1994-11-04 | 2000-06-05 | キヤノン株式会社 | 位置決めステージ装置およびこれを用いた露光装置 |
| KR100431329B1 (ko) | 2001-10-11 | 2004-05-12 | 삼성전자주식회사 | 반도체 웨이퍼 오버레이 보정방법 |
| US7009359B2 (en) * | 2003-08-08 | 2006-03-07 | Asml Holding N.V. | Foam core chuck for the scanning stage of a lithography system |
| US7250237B2 (en) | 2003-12-23 | 2007-07-31 | Asml Netherlands B.V. | Optimized correction of wafer thermal deformations in a lithographic process |
| US7025280B2 (en) * | 2004-01-30 | 2006-04-11 | Tokyo Electron Limited | Adaptive real time control of a reticle/mask system |
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| US7453063B2 (en) | 2004-12-08 | 2008-11-18 | Asml Netherlands B.V. | Calibration substrate and method for calibrating a lithographic apparatus |
| JP2006293314A (ja) | 2005-02-08 | 2006-10-26 | Fuji Photo Film Co Ltd | 画像形成装置および画像形成方法 |
| JP2006295148A (ja) * | 2005-03-18 | 2006-10-26 | Canon Inc | 露光装置 |
| US7663732B2 (en) * | 2005-03-18 | 2010-02-16 | Canon Kabushiki Kaisha | Exposure apparatus, exposure method and device manufacturing method for compensating position measuring system using temperature |
| US7184853B2 (en) | 2005-05-18 | 2007-02-27 | Infineon Technologies Richmond, Lp | Lithography method and system with correction of overlay offset errors caused by wafer processing |
| WO2007030704A2 (en) * | 2005-09-09 | 2007-03-15 | Brion Technologies, Inc. | System and method for mask verification using an individual mask error model |
| US7830493B2 (en) | 2005-10-04 | 2010-11-09 | Asml Netherlands B.V. | System and method for compensating for radiation induced thermal distortions in a substrate or projection system |
| US7645546B2 (en) | 2006-02-06 | 2010-01-12 | Macronix International Co., Ltd. | Method for determining an overlay correlation set |
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| JP2009238922A (ja) | 2008-03-26 | 2009-10-15 | Nikon Corp | 露光装置、露光方法及びデバイスの製造方法 |
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| US10444643B2 (en) * | 2017-03-24 | 2019-10-15 | Nikon Research Corporation Of America | Lithographic thermal distortion compensation with the use of machine learning |
| US10534257B2 (en) * | 2017-05-01 | 2020-01-14 | Lam Research Corporation | Layout pattern proximity correction through edge placement error prediction |
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2019
- 2019-02-15 US US16/277,805 patent/US10996572B2/en active Active
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2020
- 2020-01-16 JP JP2021547456A patent/JP7292397B2/ja active Active
- 2020-01-16 KR KR1020217029491A patent/KR102717090B1/ko active Active
- 2020-01-16 CN CN202410249817.6A patent/CN118092083A/zh active Pending
- 2020-01-16 KR KR1020247033611A patent/KR20240151279A/ko active Pending
- 2020-01-16 WO PCT/US2020/013861 patent/WO2020167408A1/en not_active Ceased
- 2020-01-16 CN CN202080019314.XA patent/CN113544594B/zh active Active
- 2020-01-21 TW TW109102168A patent/TWI754209B/zh active
- 2020-01-21 TW TW110149464A patent/TWI789191B/zh active
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2021
- 2021-03-30 US US17/217,799 patent/US12379671B2/en active Active
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2023
- 2023-06-06 JP JP2023092916A patent/JP2023126759A/ja active Pending
-
2025
- 2025-07-10 JP JP2025116329A patent/JP2025165943A/ja active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003107725A (ja) | 2001-09-27 | 2003-04-09 | Fuji Photo Film Co Ltd | 画像記録装置 |
| JP2004327807A (ja) | 2003-04-25 | 2004-11-18 | Canon Inc | 光学素子位置決め装置、それを用いた露光装置、デバイスの製造方法 |
| JP2005026439A (ja) | 2003-07-02 | 2005-01-27 | Hitachi High-Technologies Corp | 電子線描画装置 |
| WO2005083756A1 (ja) | 2004-03-01 | 2005-09-09 | Nikon Corporation | 事前計測処理方法、露光システム及び基板処理装置 |
| JP2014074837A (ja) | 2012-10-05 | 2014-04-24 | Dainippon Screen Mfg Co Ltd | 画像記録装置および画像記録方法 |
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| US10996572B2 (en) | 2021-05-04 |
| JP7292397B2 (ja) | 2023-06-16 |
| TWI754209B (zh) | 2022-02-01 |
| TW202043947A (zh) | 2020-12-01 |
| KR20240151279A (ko) | 2024-10-17 |
| JP2023126759A (ja) | 2023-09-12 |
| TW202242569A (zh) | 2022-11-01 |
| CN118092083A (zh) | 2024-05-28 |
| US20210216019A1 (en) | 2021-07-15 |
| US12379671B2 (en) | 2025-08-05 |
| KR20210116707A (ko) | 2021-09-27 |
| TWI789191B (zh) | 2023-01-01 |
| JP2025165943A (ja) | 2025-11-05 |
| JP2022521067A (ja) | 2022-04-05 |
| CN113544594A (zh) | 2021-10-22 |
| US20200264514A1 (en) | 2020-08-20 |
| WO2020167408A1 (en) | 2020-08-20 |
| CN113544594B (zh) | 2024-03-19 |
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