TWI754209B - 用於數位光刻工具之校正方法 - Google Patents

用於數位光刻工具之校正方法 Download PDF

Info

Publication number
TWI754209B
TWI754209B TW109102168A TW109102168A TWI754209B TW I754209 B TWI754209 B TW I754209B TW 109102168 A TW109102168 A TW 109102168A TW 109102168 A TW109102168 A TW 109102168A TW I754209 B TWI754209 B TW I754209B
Authority
TW
Taiwan
Prior art keywords
model
data
period
during
temperature
Prior art date
Application number
TW109102168A
Other languages
English (en)
Chinese (zh)
Other versions
TW202043947A (zh
Inventor
塔梅爾 克斯古
穆哈麥特 波亞茲
鐘欽
帕查 蒙可萬榮
Original Assignee
美商應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW202043947A publication Critical patent/TW202043947A/zh
Application granted granted Critical
Publication of TWI754209B publication Critical patent/TWI754209B/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7092—Signal processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Signal Processing (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Vehicle Body Suspensions (AREA)
  • Fluid-Damping Devices (AREA)
  • Optical Communication System (AREA)
  • Details Of Measuring And Other Instruments (AREA)
TW109102168A 2019-02-15 2020-01-21 用於數位光刻工具之校正方法 TWI754209B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/277,805 US10996572B2 (en) 2019-02-15 2019-02-15 Model based dynamic positional correction for digital lithography tools
US16/277,805 2019-02-15

Publications (2)

Publication Number Publication Date
TW202043947A TW202043947A (zh) 2020-12-01
TWI754209B true TWI754209B (zh) 2022-02-01

Family

ID=72040798

Family Applications (2)

Application Number Title Priority Date Filing Date
TW109102168A TWI754209B (zh) 2019-02-15 2020-01-21 用於數位光刻工具之校正方法
TW110149464A TWI789191B (zh) 2019-02-15 2020-01-21 光刻系統

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW110149464A TWI789191B (zh) 2019-02-15 2020-01-21 光刻系統

Country Status (6)

Country Link
US (2) US10996572B2 (enExample)
JP (3) JP7292397B2 (enExample)
KR (2) KR102717090B1 (enExample)
CN (2) CN118092083A (enExample)
TW (2) TWI754209B (enExample)
WO (1) WO2020167408A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102263718B1 (ko) * 2019-06-10 2021-06-11 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11481922B2 (en) * 2020-04-07 2022-10-25 Kla Corporation Online navigational drift correction for metrology measurements
CN116540489A (zh) * 2023-04-23 2023-08-04 上海华力集成电路制造有限公司 针对光刻中光罩热效应的修正方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050167514A1 (en) * 2004-01-30 2005-08-04 Sanjeev Kaushal Adaptive real time control of a reticle/mask system
US20180136541A1 (en) * 2016-11-11 2018-05-17 Asml Netherlands B.V. Compensating for a physical effect in an optical system
US20180275525A1 (en) * 2017-03-24 2018-09-27 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning
US20180322237A1 (en) * 2015-10-19 2018-11-08 Asml Netherlands B.V. Method and apparatus to correct for patterning process error

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9000503A (nl) * 1990-03-05 1991-10-01 Asm Lithography Bv Apparaat en werkwijze voor het afbeelden van een maskerpatroon op een substraat.
JP3048508B2 (ja) * 1994-11-04 2000-06-05 キヤノン株式会社 位置決めステージ装置およびこれを用いた露光装置
JP4308460B2 (ja) 2001-09-27 2009-08-05 富士フイルム株式会社 画像記録装置
KR100431329B1 (ko) 2001-10-11 2004-05-12 삼성전자주식회사 반도체 웨이퍼 오버레이 보정방법
JP4307140B2 (ja) 2003-04-25 2009-08-05 キヤノン株式会社 光学素子位置決め装置、それを用いた露光装置、デバイスの製造方法
JP3978158B2 (ja) 2003-07-02 2007-09-19 株式会社日立ハイテクノロジーズ 電子線描画装置
US7009359B2 (en) * 2003-08-08 2006-03-07 Asml Holding N.V. Foam core chuck for the scanning stage of a lithography system
US7250237B2 (en) 2003-12-23 2007-07-31 Asml Netherlands B.V. Optimized correction of wafer thermal deformations in a lithographic process
JP4760705B2 (ja) * 2004-03-01 2011-08-31 株式会社ニコン 事前計測処理方法、露光システム及び基板処理装置
US7561251B2 (en) * 2004-03-29 2009-07-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7453063B2 (en) 2004-12-08 2008-11-18 Asml Netherlands B.V. Calibration substrate and method for calibrating a lithographic apparatus
JP2006293314A (ja) 2005-02-08 2006-10-26 Fuji Photo Film Co Ltd 画像形成装置および画像形成方法
JP2006295148A (ja) * 2005-03-18 2006-10-26 Canon Inc 露光装置
US7663732B2 (en) * 2005-03-18 2010-02-16 Canon Kabushiki Kaisha Exposure apparatus, exposure method and device manufacturing method for compensating position measuring system using temperature
US7184853B2 (en) 2005-05-18 2007-02-27 Infineon Technologies Richmond, Lp Lithography method and system with correction of overlay offset errors caused by wafer processing
WO2007030704A2 (en) * 2005-09-09 2007-03-15 Brion Technologies, Inc. System and method for mask verification using an individual mask error model
US7830493B2 (en) 2005-10-04 2010-11-09 Asml Netherlands B.V. System and method for compensating for radiation induced thermal distortions in a substrate or projection system
US7645546B2 (en) 2006-02-06 2010-01-12 Macronix International Co., Ltd. Method for determining an overlay correlation set
WO2008001891A1 (en) * 2006-06-30 2008-01-03 Hitachi High-Technologies Corporation Inspecting device, and inspecting method
CN101144976B (zh) * 2007-10-30 2011-03-23 中国科学院电工研究所 一种光刻系统掩模邻近效应校正方法
JP2009238922A (ja) 2008-03-26 2009-10-15 Nikon Corp 露光装置、露光方法及びデバイスの製造方法
DE102008042356A1 (de) * 2008-09-25 2010-04-08 Carl Zeiss Smt Ag Projektionsbelichtungsanlage mit optimierter Justagemöglichkeit
NL2003223A (en) * 2008-09-30 2010-03-31 Asml Netherlands Bv Projection system, lithographic apparatus, method of postitioning an optical element and method of projecting a beam of radiation onto a substrate.
US9052604B2 (en) 2008-11-06 2015-06-09 Micron Technology, Inc. Photolithography systems and associated alignment correction methods
US20100259761A1 (en) * 2009-04-08 2010-10-14 Nikon Corporation Robust Long Wire Resistance Thermometer
NL2004815A (en) 2009-06-17 2010-12-20 Asml Netherlands Bv Method of overlay measurement, lithographic apparatus, inspection apparatus, processing apparatus and lithographic processing cell.
CN102445149B (zh) 2010-10-14 2014-02-19 上海微电子装备有限公司 一种工件台位置测量装置与测量方法
NL2010196A (en) * 2012-02-09 2013-08-13 Asml Netherlands Bv Lens heating aware source mask optimization for advanced lithography.
JP5879234B2 (ja) * 2012-09-03 2016-03-08 株式会社ニューフレアテクノロジー マスク描画装置、電子ビームの補正方法
JP6035105B2 (ja) 2012-10-05 2016-11-30 株式会社Ｓｃｒｅｅｎホールディングス 画像記録装置および画像記録方法
US9430593B2 (en) 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
KR102166879B1 (ko) * 2014-03-10 2020-10-16 어플라이드 머티어리얼스, 인코포레이티드 다중 하전-입자 빔 리소그래피를 위한 픽셀 블렌딩
US20160148850A1 (en) 2014-11-25 2016-05-26 Stream Mosaic, Inc. Process control techniques for semiconductor manufacturing processes
US9499906B2 (en) * 2015-02-13 2016-11-22 Eastman Kodak Company Coating substrate using bernoulli atomic-layer deposition
DE102016205987B4 (de) * 2016-04-11 2018-01-25 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage mit mindestens einem Manipulator und Verfahren zum Steuern einer Projektionsbelichtungsanlage
US10534257B2 (en) * 2017-05-01 2020-01-14 Lam Research Corporation Layout pattern proximity correction through edge placement error prediction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050167514A1 (en) * 2004-01-30 2005-08-04 Sanjeev Kaushal Adaptive real time control of a reticle/mask system
US20180322237A1 (en) * 2015-10-19 2018-11-08 Asml Netherlands B.V. Method and apparatus to correct for patterning process error
US20180136541A1 (en) * 2016-11-11 2018-05-17 Asml Netherlands B.V. Compensating for a physical effect in an optical system
US20180275525A1 (en) * 2017-03-24 2018-09-27 Nikon Research Corporation Of America Lithographic thermal distortion compensation with the use of machine learning

Also Published As

Publication number Publication date
US10996572B2 (en) 2021-05-04
JP7292397B2 (ja) 2023-06-16
KR102717090B1 (ko) 2024-10-11
TW202043947A (zh) 2020-12-01
KR20240151279A (ko) 2024-10-17
JP2023126759A (ja) 2023-09-12
TW202242569A (zh) 2022-11-01
CN118092083A (zh) 2024-05-28
US20210216019A1 (en) 2021-07-15
US12379671B2 (en) 2025-08-05
KR20210116707A (ko) 2021-09-27
TWI789191B (zh) 2023-01-01
JP2025165943A (ja) 2025-11-05
JP2022521067A (ja) 2022-04-05
CN113544594A (zh) 2021-10-22
US20200264514A1 (en) 2020-08-20
WO2020167408A1 (en) 2020-08-20
CN113544594B (zh) 2024-03-19

Similar Documents

Publication Publication Date Title
JP2025165943A (ja) デジタルリソグラフィツールのためのモデルベース動的位置補正
CN102954761B (zh) 位置测量系统、光刻设备以及器件制造方法
US10379450B2 (en) Apparatus and methods for on-the-fly digital exposure image data modification
KR102377041B1 (ko) 노광 시스템 정렬 및 교정 방법
KR102407622B1 (ko) 프리폼 왜곡 교정
CN108713167B (zh) 光刻设备和器件制造方法
EP2917785B1 (en) Lithographic apparatus and device manufacturing method
US8928882B2 (en) Measurement apparatus, exposure apparatus, and device fabrication method
US10114297B2 (en) Active eye-to-eye with alignment by X-Y capacitance measurement
CN120344910A (zh) 基于掩模版形状测量来推断和估计掩模版温度的方法
JP3208680U (ja) フォトグラフィプロセスのためのシステムの環境制御
US20250284207A1 (en) Inspection of lithographic layers and dynamic data via inline metrology
WO2025031740A1 (en) Methods and systems to reduce non-uniform thermomechanical effects
WO2025153303A1 (en) Methods and systems to reduce effects of uncertain conditions for reticle heating