JP2022521067A - デジタルリソグラフィツールのためのモデルベース動的位置補正 - Google Patents
デジタルリソグラフィツールのためのモデルベース動的位置補正 Download PDFInfo
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7019—Calibration
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7092—Signal processing
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
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Abstract
Description
Claims (15)
- フォトリソグラフィシステムを開始して、安定化期間に入ることと、
前記安定化期間中に前記フォトリソグラフィシステムがプリンティングしているときに、データおよび位置読み取り値を収集することと、
前記データおよび前記位置読み取り値に基づいてモデルを作成することと、
前記モデルを使用して、後続の安定化期間中に推定誤差を動的に補正することと、
を含む方法。 - 収集される前記データが、温度データであり、前記温度データが、前記フォトリソグラフィシステム全体に配置された複数の温度センサを使用して収集される、請求項1に記載の方法。
- 以下のグループ:熱的影響なしで前記安定化期間中に前記位置読み取り値があるべき位置、熱的影響により前記位置読み取り値が実際にある位置、前記位置読み取り値の摂動の近似値、前記フォトリソグラフィシステムの初期温度、および所定の時間が経過した後の前記初期温度からの測定された温度変化、から選択された1つ以上のパラメータを使用して、前記モデルが形成される、請求項2に記載の方法。
- 前記温度データが、前記安定化期間の加熱期間および冷却期間中に収集される、請求項2に記載の方法。
- 収集される前記データが、圧力データである、または収集される前記データが、湿度データである、請求項1に記載の方法。
- 前記モデルが、カスケード過渡モデルのセットである、請求項1に記載の方法。
- フォトリソグラフィシステムを開始して、安定化期間に入ることと、
前記安定化期間中に前記フォトリソグラフィシステムがプリンティングしているときに、温度データおよび位置読み取り値を収集することであって、前記温度データが、加熱期間および冷却期間中に収集される、温度データおよび位置読み取り値を収集することと、
前記温度データおよび前記位置読み取り値に基づいてモデルを作成することと、
前記モデルを較正することと、
較正された前記モデルを使用して、後続の安定化期間での誤差を推定することと、
推定された前記誤差を、前記後続の安定化期間中に動的に補正することと、
を含む方法。 - 圧力データが、さらに収集され、前記モデルが、前記圧力データに基づいて作成される、または湿度データが、さらに収集され、前記モデルが、前記湿度データに基づいて作成される、請求項7に記載の方法。
- 前記モデルが、カスケード過渡モデルのセットである、請求項7に記載の方法。
- 前記温度データが、前記フォトリソグラフィシステム全体に配置された複数の温度センサを使用して収集される、請求項7に記載の方法。
- 以下のグループ:熱的影響なしで前記安定化期間中に前記位置読み取り値があるべき位置、熱的影響により前記位置読み取り値が実際にある位置、前記位置読み取り値の摂動の近似値、前記フォトリソグラフィシステムの初期温度、および所定の時間が経過した後の前記初期温度からの測定された温度変化、から選択された1つ以上のパラメータを使用して、前記モデルが形成される、請求項7に記載の方法。
- フォトリソグラフィシステムを開始して、安定化期間に入ることと、
前記安定化期間中に前記フォトリソグラフィシステムがプリンティングしているときに、温度データおよび位置読み取り値を収集することと、
前記温度データおよび前記位置読み取り値に基づいてモデルを作成することと、
最適化問題を形成して、前記フォトリソグラフィシステムの熱容量および伝達率を決定することと、
前記モデルおよび前記最適化問題を使用して、後続の安定化期間での誤差を推定することと、
推定された前記誤差を、前記後続の安定化期間中に動的に補正することと、
を含む方法。 - 圧力データが、さらに収集され、前記モデルが、前記圧力データに基づいて作成される、または湿度データが、さらに収集され、前記モデルが、前記湿度データに基づいて作成される、請求項12に記載の方法。
- 前記温度データが、前記安定化期間の加熱期間および冷却期間中に収集され、前記モデルが、カスケード過渡モデルのセットである、請求項12に記載の方法。
- 以下のグループ:熱的影響なしで前記安定化期間中に前記位置読み取り値があるべき位置、熱的影響により前記位置読み取り値が実際にある位置、前記位置読み取り値の摂動の近似値、前記フォトリソグラフィシステムの初期温度、および所定の時間が経過した後の前記初期温度からの測定された温度変化、から選択された1つ以上のパラメータを使用して、前記モデルが形成される、請求項12に記載の方法。
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US16/277,805 US10996572B2 (en) | 2019-02-15 | 2019-02-15 | Model based dynamic positional correction for digital lithography tools |
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PCT/US2020/013861 WO2020167408A1 (en) | 2019-02-15 | 2020-01-16 | Model based dynamic positional correction for digital lithography tools |
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JP (2) | JP7292397B2 (ja) |
KR (1) | KR20210116707A (ja) |
CN (1) | CN113544594B (ja) |
TW (2) | TWI754209B (ja) |
WO (1) | WO2020167408A1 (ja) |
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KR102263718B1 (ko) * | 2019-06-10 | 2021-06-11 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
US11481922B2 (en) * | 2020-04-07 | 2022-10-25 | Kla Corporation | Online navigational drift correction for metrology measurements |
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2019
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TWI754209B (zh) | 2022-02-01 |
WO2020167408A1 (en) | 2020-08-20 |
JP7292397B2 (ja) | 2023-06-16 |
CN113544594A (zh) | 2021-10-22 |
US10996572B2 (en) | 2021-05-04 |
CN113544594B (zh) | 2024-03-19 |
JP2023126759A (ja) | 2023-09-12 |
US20200264514A1 (en) | 2020-08-20 |
US20210216019A1 (en) | 2021-07-15 |
KR20210116707A (ko) | 2021-09-27 |
TWI789191B (zh) | 2023-01-01 |
TW202043947A (zh) | 2020-12-01 |
TW202242569A (zh) | 2022-11-01 |
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