KR102709465B1 - 탄성파 장치 - Google Patents

탄성파 장치 Download PDF

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Publication number
KR102709465B1
KR102709465B1 KR1020227014803A KR20227014803A KR102709465B1 KR 102709465 B1 KR102709465 B1 KR 102709465B1 KR 1020227014803 A KR1020227014803 A KR 1020227014803A KR 20227014803 A KR20227014803 A KR 20227014803A KR 102709465 B1 KR102709465 B1 KR 102709465B1
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KR
South Korea
Prior art keywords
silicon carbide
elastic wave
wave device
carbide substrate
layer
Prior art date
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KR1020227014803A
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English (en)
Korean (ko)
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KR20220075403A (ko
Inventor
히데키 이와모토
Original Assignee
가부시키가이샤 무라타 세이사쿠쇼
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Publication of KR20220075403A publication Critical patent/KR20220075403A/ko
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Publication of KR102709465B1 publication Critical patent/KR102709465B1/ko
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/058—Holders or supports for surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0595—Holders or supports the holder support and resonator being formed in one body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
KR1020227014803A 2019-11-06 2020-11-05 탄성파 장치 Active KR102709465B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019201522 2019-11-06
JPJP-P-2019-201522 2019-11-06
JPJP-P-2019-201524 2019-11-06
JP2019201524 2019-11-06
PCT/JP2020/041292 WO2021090861A1 (ja) 2019-11-06 2020-11-05 弾性波装置

Publications (2)

Publication Number Publication Date
KR20220075403A KR20220075403A (ko) 2022-06-08
KR102709465B1 true KR102709465B1 (ko) 2024-09-24

Family

ID=75849943

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227014803A Active KR102709465B1 (ko) 2019-11-06 2020-11-05 탄성파 장치

Country Status (5)

Country Link
US (1) US12587162B2 (https=)
JP (1) JP7380703B2 (https=)
KR (1) KR102709465B1 (https=)
CN (1) CN114641931A (https=)
WO (1) WO2021090861A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102844652B1 (ko) * 2023-07-14 2025-08-11 (주)와이솔 스퓨리어스의 여진이 억제된 표면탄성파 소자
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140225684A1 (en) * 2011-10-24 2014-08-14 Murata Manufacturing Co., Ltd. Surface acoustic wave device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08310900A (ja) * 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd 窒化物薄膜単結晶及びその製造方法
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
WO2005060094A1 (ja) * 2003-12-16 2005-06-30 Murata Manufacturing Co., Ltd. 弾性境界波装置
JP2007182335A (ja) 2006-01-05 2007-07-19 Toshiba Ceramics Co Ltd 単結晶薄膜およびその形成方法
JP2007228225A (ja) 2006-02-23 2007-09-06 Seiko Epson Corp 弾性表面波デバイス
KR101082201B1 (ko) 2009-01-09 2011-11-09 울산대학교 산학협력단 표면탄성파 소자
JP5354020B2 (ja) 2009-10-13 2013-11-27 株式会社村田製作所 弾性表面波装置
CN106209007B (zh) 2010-12-24 2019-07-05 株式会社村田制作所 弹性波装置
JP5811785B2 (ja) 2011-11-08 2015-11-11 セイコーエプソン株式会社 センサー素子、力検出装置およびロボット
WO2017068828A1 (ja) * 2015-10-23 2017-04-27 株式会社村田製作所 弾性波装置
JP2019114986A (ja) 2017-12-25 2019-07-11 株式会社村田製作所 弾性波装置
JP2019146143A (ja) 2018-02-21 2019-08-29 住友金属鉱山株式会社 表面弾性波素子用複合基板とその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140225684A1 (en) * 2011-10-24 2014-08-14 Murata Manufacturing Co., Ltd. Surface acoustic wave device

Also Published As

Publication number Publication date
US20220255527A1 (en) 2022-08-11
JP7380703B2 (ja) 2023-11-15
WO2021090861A1 (ja) 2021-05-14
JPWO2021090861A1 (https=) 2021-05-14
CN114641931A (zh) 2022-06-17
US12587162B2 (en) 2026-03-24
KR20220075403A (ko) 2022-06-08

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