KR102708904B1 - 자유원자 나노튜브 성장 - Google Patents

자유원자 나노튜브 성장 Download PDF

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Publication number
KR102708904B1
KR102708904B1 KR1020187026340A KR20187026340A KR102708904B1 KR 102708904 B1 KR102708904 B1 KR 102708904B1 KR 1020187026340 A KR1020187026340 A KR 1020187026340A KR 20187026340 A KR20187026340 A KR 20187026340A KR 102708904 B1 KR102708904 B1 KR 102708904B1
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substrate
atoms
catalyst
front surface
supply
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KR20180114127A (ko
Inventor
브라이언 라우브셔
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오디세우스 테크놀로지스, 인코퍼레이티드
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0019—Forming specific nanostructures without movable or flexible elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/164—Preparation involving continuous processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/13—Nanotubes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020187026340A 2016-02-15 2017-02-12 자유원자 나노튜브 성장 Active KR102708904B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/043,952 2016-02-15
US15/043,952 US10618810B2 (en) 2013-09-25 2016-02-15 Free atom nanotube growth
PCT/US2017/017583 WO2017142819A1 (en) 2016-02-15 2017-02-12 Free atom nanotube growth

Publications (2)

Publication Number Publication Date
KR20180114127A KR20180114127A (ko) 2018-10-17
KR102708904B1 true KR102708904B1 (ko) 2024-09-23

Family

ID=59562387

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KR1020187026340A Active KR102708904B1 (ko) 2016-02-15 2017-02-12 자유원자 나노튜브 성장

Country Status (8)

Country Link
US (1) US10618810B2 (https=)
EP (1) EP3416914A4 (https=)
JP (2) JP2019511995A (https=)
KR (1) KR102708904B1 (https=)
CN (1) CN108883938B (https=)
CA (1) CA3014048A1 (https=)
RU (2) RU2021122177A (https=)
WO (1) WO2017142819A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10618810B2 (en) * 2013-09-25 2020-04-14 Odysseus Technologies, Inc. Free atom nanotube growth
US11247901B2 (en) 2012-10-29 2022-02-15 Odysseus Technologies, Inc. Free atom nanotube growth
FR3107053B1 (fr) * 2020-02-11 2022-02-04 Commissariat Energie Atomique Materiau hydride 2d/1d comprenant une couche carbonee recouverte par une foret de nanotubes de carbone

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110162957A1 (en) * 2009-11-25 2011-07-07 Massachusetts Institute Of Technology Systems and methods for enhancing growth of carbon-based nanostructures
US20140120029A1 (en) * 2012-10-29 2014-05-01 Bryan Edward Laubscher Trekking Atom Nanotube Growth

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GB0216654D0 (en) 2002-07-17 2002-08-28 Univ Cambridge Tech CVD Synthesis of carbon nanoutubes
CN100411979C (zh) 2002-09-16 2008-08-20 清华大学 一种碳纳米管绳及其制造方法
CN101205060B (zh) 2006-12-20 2011-05-04 清华大学 碳纳米管阵列的制备方法
US8206674B2 (en) 2007-05-15 2012-06-26 National Institute Of Aerospace Associates Boron nitride nanotubes
US20090163647A1 (en) * 2007-12-21 2009-06-25 Envont Llc Hybrid metal oxides
KR100977147B1 (ko) * 2007-12-31 2010-08-23 세메스 주식회사 유동층 탄소나노튜브 생성 장치 및 그것을 사용한탄소나노튜브 생성 설비 및 방법
US7883580B2 (en) * 2008-04-02 2011-02-08 Raythedn Company System and method for nanotube growth via Ion implantation using a catalytic transmembrane
CN101734641A (zh) * 2008-11-14 2010-06-16 华北电力大学 热解合成碳纳米管加热器及合成方法
RU2393276C1 (ru) * 2009-03-05 2010-06-27 Общество с ограниченной ответственностью "Объединенный центр исследований и разработок" Способ изготовления длинных ориентированных жгутов углеродных нановолокон
CN102574688A (zh) * 2009-07-31 2012-07-11 麻省理工学院 涉及形成碳基纳米管的系统和方法
WO2013119295A1 (en) * 2011-11-18 2013-08-15 William Marsh Rice University Graphene-carbon nanotube hybrid materials and use as electrodes
US20130306490A1 (en) 2012-05-15 2013-11-21 Bryan Edward Laubscher Nanotube Detangler
US9656246B2 (en) * 2012-07-11 2017-05-23 Carbice Corporation Vertically aligned arrays of carbon nanotubes formed on multilayer substrates
TW201418156A (zh) * 2012-10-26 2014-05-16 Applied Materials Inc 銅基板上的奈米碳管之生長
US10618810B2 (en) * 2013-09-25 2020-04-14 Odysseus Technologies, Inc. Free atom nanotube growth
US20140120028A1 (en) 2012-10-29 2014-05-01 Bryan Edward Laubscher Proximate atom nanotube growth
US9239224B2 (en) 2013-02-26 2016-01-19 Bryan Edward Laubscher Natural light interferometer

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US20110162957A1 (en) * 2009-11-25 2011-07-07 Massachusetts Institute Of Technology Systems and methods for enhancing growth of carbon-based nanostructures
US20140120029A1 (en) * 2012-10-29 2014-05-01 Bryan Edward Laubscher Trekking Atom Nanotube Growth

Also Published As

Publication number Publication date
RU2021122177A3 (https=) 2022-04-19
JP7384855B2 (ja) 2023-11-21
KR20180114127A (ko) 2018-10-17
RU2018132725A (ru) 2020-03-17
JP2019511995A (ja) 2019-05-09
JP2021121580A (ja) 2021-08-26
RU2021122177A (ru) 2021-10-29
CN108883938B (zh) 2023-06-23
EP3416914A1 (en) 2018-12-26
RU2753099C2 (ru) 2021-08-11
EP3416914A4 (en) 2020-03-18
CA3014048A1 (en) 2017-08-24
US10618810B2 (en) 2020-04-14
RU2018132725A3 (https=) 2020-07-30
CN108883938A (zh) 2018-11-23
WO2017142819A1 (en) 2017-08-24
US20170233254A1 (en) 2017-08-17

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