KR102667049B1 - 플라즈마 가열된 윈도우의 멀티-존 (multi-zone) 냉각 - Google Patents

플라즈마 가열된 윈도우의 멀티-존 (multi-zone) 냉각 Download PDF

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KR102667049B1
KR102667049B1 KR1020207016869A KR20207016869A KR102667049B1 KR 102667049 B1 KR102667049 B1 KR 102667049B1 KR 1020207016869 A KR1020207016869 A KR 1020207016869A KR 20207016869 A KR20207016869 A KR 20207016869A KR 102667049 B1 KR102667049 B1 KR 102667049B1
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air
window
plenum
airflow
top surface
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Korean (ko)
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KR20200075012A (ko
Inventor
이팅 장
리처드 마시
사라바나프리얀 스리라만
알렉산더 패터슨
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D1/00—Devices using naturally cold air or cold water
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
    • F25D17/005—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces in cold rooms
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
    • F25D17/04—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating air, e.g. by convection
    • F25D17/06—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating air, e.g. by convection by forced circulation
    • F25D17/08—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating air, e.g. by convection by forced circulation using ducts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D2700/00—Means for sensing or measuring; Sensors therefor
    • F25D2700/16—Sensors measuring the temperature of products
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Combustion & Propulsion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020207016869A 2017-11-15 2018-11-12 플라즈마 가열된 윈도우의 멀티-존 (multi-zone) 냉각 Active KR102667049B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020247015947A KR102953828B1 (ko) 2017-11-15 2018-11-12 플라즈마 가열된 윈도우의 멀티-존 (multi-zone) 냉각

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/814,139 US11538666B2 (en) 2017-11-15 2017-11-15 Multi-zone cooling of plasma heated window
US15/814,139 2017-11-15
PCT/US2018/060240 WO2019099313A1 (en) 2017-11-15 2018-11-12 Multi-zone cooling of plasma heated window

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020247015947A Division KR102953828B1 (ko) 2017-11-15 2018-11-12 플라즈마 가열된 윈도우의 멀티-존 (multi-zone) 냉각

Publications (2)

Publication Number Publication Date
KR20200075012A KR20200075012A (ko) 2020-06-25
KR102667049B1 true KR102667049B1 (ko) 2024-05-20

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Country Status (6)

Country Link
US (2) US11538666B2 (https=)
JP (3) JP7384792B2 (https=)
KR (1) KR102667049B1 (https=)
CN (2) CN111357075B (https=)
TW (3) TWI883911B (https=)
WO (1) WO2019099313A1 (https=)

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KR20220032616A (ko) * 2019-07-16 2022-03-15 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 열전 냉각 페데스탈 (thermoelectric cooling pedestal)
TWI731463B (zh) * 2019-11-06 2021-06-21 聚昌科技股份有限公司 側向擾流式高均勻度感應耦合電漿蝕刻機之製造方法及其結構
CN113013008B (zh) * 2019-12-19 2024-06-07 中微半导体设备(上海)股份有限公司 电感耦合型等离子处理设备及其盖体、介电窗温控方法
CN115362542A (zh) 2020-01-29 2022-11-18 朗姆研究公司 具有热调谐腔特征的晶片卡盘
CN115039197A (zh) * 2020-01-31 2022-09-09 朗姆研究公司 用于冷却变压器耦合等离子体窗的充气室组件
CN115280465A (zh) * 2020-02-11 2022-11-01 朗姆研究公司 用于半导体处理腔室窗的冷却板
JP7678823B2 (ja) * 2020-04-16 2025-05-16 ラム リサーチ コーポレーション ガス冷却を使用するシャワーヘッド熱管理
WO2021225890A1 (en) * 2020-05-04 2021-11-11 Lam Research Corporation Increasing plasma uniformity in a receptacle
CN113990730B (zh) * 2020-07-27 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置及其中的气流调节盖和气流调节方法
WO2022039984A1 (en) * 2020-08-18 2022-02-24 Lam Research Corporation Controlling temperature profiles of plasma chamber components using stress analysis
JP7531349B2 (ja) * 2020-08-28 2024-08-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN112820616B (zh) * 2021-01-18 2024-04-12 北京北方华创微电子装备有限公司 一种半导体工艺腔室
CN114823272B (zh) * 2022-05-25 2026-04-21 北京北方华创微电子装备有限公司 半导体工艺设备
JP2024007812A (ja) * 2022-07-06 2024-01-19 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
JP2024051314A (ja) * 2022-09-30 2024-04-11 東京エレクトロン株式会社 冷却装置、基板処理装置、および冷却方法
WO2024171674A1 (ja) * 2023-02-13 2024-08-22 東京エレクトロン株式会社 プラズマ処理装置及び誘電体窓の製造方法

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Also Published As

Publication number Publication date
TWI883911B (zh) 2025-05-11
TWI842395B (zh) 2024-05-11
JP2024012547A (ja) 2024-01-30
TW201933473A (zh) 2019-08-16
JP7384792B2 (ja) 2023-11-21
JP2021503183A (ja) 2021-02-04
TW202322182A (zh) 2023-06-01
US20230121097A1 (en) 2023-04-20
TW202437333A (zh) 2024-09-16
WO2019099313A1 (en) 2019-05-23
CN111357075B (zh) 2023-12-05
CN111357075A (zh) 2020-06-30
TWI796382B (zh) 2023-03-21
KR20240074898A (ko) 2024-05-28
CN117810058A (zh) 2024-04-02
US11538666B2 (en) 2022-12-27
KR20200075012A (ko) 2020-06-25
US20190148118A1 (en) 2019-05-16
JP7600344B2 (ja) 2024-12-16
JP2025029110A (ja) 2025-03-05

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