JP7384792B2 - プラズマ加熱された窓のマルチゾーン冷却 - Google Patents
プラズマ加熱された窓のマルチゾーン冷却 Download PDFInfo
- Publication number
- JP7384792B2 JP7384792B2 JP2020526991A JP2020526991A JP7384792B2 JP 7384792 B2 JP7384792 B2 JP 7384792B2 JP 2020526991 A JP2020526991 A JP 2020526991A JP 2020526991 A JP2020526991 A JP 2020526991A JP 7384792 B2 JP7384792 B2 JP 7384792B2
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- Japan
- Prior art keywords
- air
- plenum
- substrate processing
- processing system
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D1/00—Devices using naturally cold air or cold water
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
- F25D17/005—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces in cold rooms
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
- F25D17/04—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating air, e.g. by convection
- F25D17/06—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating air, e.g. by convection by forced circulation
- F25D17/08—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating air, e.g. by convection by forced circulation using ducts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
- H10P72/0434—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D2700/00—Means for sensing or measuring; Sensors therefor
- F25D2700/16—Sensors measuring the temperature of products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/002—Cooling arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0421—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Combustion & Propulsion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023191210A JP7600344B2 (ja) | 2017-11-15 | 2023-11-09 | プラズマ加熱された窓のマルチゾーン冷却 |
| JP2024210829A JP2025029110A (ja) | 2017-11-15 | 2024-12-04 | プラズマ加熱された窓のマルチゾーン冷却 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/814,139 US11538666B2 (en) | 2017-11-15 | 2017-11-15 | Multi-zone cooling of plasma heated window |
| US15/814,139 | 2017-11-15 | ||
| PCT/US2018/060240 WO2019099313A1 (en) | 2017-11-15 | 2018-11-12 | Multi-zone cooling of plasma heated window |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023191210A Division JP7600344B2 (ja) | 2017-11-15 | 2023-11-09 | プラズマ加熱された窓のマルチゾーン冷却 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021503183A JP2021503183A (ja) | 2021-02-04 |
| JP2021503183A5 JP2021503183A5 (https=) | 2022-01-11 |
| JP7384792B2 true JP7384792B2 (ja) | 2023-11-21 |
Family
ID=66431407
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020526991A Active JP7384792B2 (ja) | 2017-11-15 | 2018-11-12 | プラズマ加熱された窓のマルチゾーン冷却 |
| JP2023191210A Active JP7600344B2 (ja) | 2017-11-15 | 2023-11-09 | プラズマ加熱された窓のマルチゾーン冷却 |
| JP2024210829A Pending JP2025029110A (ja) | 2017-11-15 | 2024-12-04 | プラズマ加熱された窓のマルチゾーン冷却 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023191210A Active JP7600344B2 (ja) | 2017-11-15 | 2023-11-09 | プラズマ加熱された窓のマルチゾーン冷却 |
| JP2024210829A Pending JP2025029110A (ja) | 2017-11-15 | 2024-12-04 | プラズマ加熱された窓のマルチゾーン冷却 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11538666B2 (https=) |
| JP (3) | JP7384792B2 (https=) |
| KR (1) | KR102667049B1 (https=) |
| CN (2) | CN111357075B (https=) |
| TW (3) | TWI883911B (https=) |
| WO (1) | WO2019099313A1 (https=) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220032616A (ko) * | 2019-07-16 | 2022-03-15 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들을 위한 열전 냉각 페데스탈 (thermoelectric cooling pedestal) |
| TWI731463B (zh) * | 2019-11-06 | 2021-06-21 | 聚昌科技股份有限公司 | 側向擾流式高均勻度感應耦合電漿蝕刻機之製造方法及其結構 |
| CN113013008B (zh) * | 2019-12-19 | 2024-06-07 | 中微半导体设备(上海)股份有限公司 | 电感耦合型等离子处理设备及其盖体、介电窗温控方法 |
| CN115362542A (zh) | 2020-01-29 | 2022-11-18 | 朗姆研究公司 | 具有热调谐腔特征的晶片卡盘 |
| CN115039197A (zh) * | 2020-01-31 | 2022-09-09 | 朗姆研究公司 | 用于冷却变压器耦合等离子体窗的充气室组件 |
| CN115280465A (zh) * | 2020-02-11 | 2022-11-01 | 朗姆研究公司 | 用于半导体处理腔室窗的冷却板 |
| JP7678823B2 (ja) * | 2020-04-16 | 2025-05-16 | ラム リサーチ コーポレーション | ガス冷却を使用するシャワーヘッド熱管理 |
| WO2021225890A1 (en) * | 2020-05-04 | 2021-11-11 | Lam Research Corporation | Increasing plasma uniformity in a receptacle |
| CN113990730B (zh) * | 2020-07-27 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及其中的气流调节盖和气流调节方法 |
| WO2022039984A1 (en) * | 2020-08-18 | 2022-02-24 | Lam Research Corporation | Controlling temperature profiles of plasma chamber components using stress analysis |
| JP7531349B2 (ja) * | 2020-08-28 | 2024-08-09 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| CN112820616B (zh) * | 2021-01-18 | 2024-04-12 | 北京北方华创微电子装备有限公司 | 一种半导体工艺腔室 |
| CN114823272B (zh) * | 2022-05-25 | 2026-04-21 | 北京北方华创微电子装备有限公司 | 半导体工艺设备 |
| JP2024007812A (ja) * | 2022-07-06 | 2024-01-19 | パナソニックIpマネジメント株式会社 | プラズマ処理装置 |
| JP2024051314A (ja) * | 2022-09-30 | 2024-04-11 | 東京エレクトロン株式会社 | 冷却装置、基板処理装置、および冷却方法 |
| WO2024171674A1 (ja) * | 2023-02-13 | 2024-08-22 | 東京エレクトロン株式会社 | プラズマ処理装置及び誘電体窓の製造方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273085A (ja) | 2002-03-18 | 2003-09-26 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
| JP2004360061A (ja) | 2003-05-13 | 2004-12-24 | Tokyo Electron Ltd | 処理装置及びその使用方法 |
| JP2012211359A (ja) | 2011-03-31 | 2012-11-01 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置 |
| US20140020837A1 (en) | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Inductively coupled plasma source with multiple dielectric windows and window-supporting structure |
| US20170103875A1 (en) | 2011-10-07 | 2017-04-13 | Lam Research Corporation | Temperature Control in RF Chamber with Heater and Air Amplifier |
| JP2017143059A (ja) | 2016-01-11 | 2017-08-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマエッチングチャンバのための高速インピーダンス切り替えを備えた変圧器結合容量性同調回路 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284051B1 (en) | 1999-05-27 | 2001-09-04 | Ag Associates (Israel) Ltd. | Cooled window |
| US6530539B2 (en) | 2001-02-09 | 2003-03-11 | Raytheon Company | Internal fluid cooled window assembly |
| US6652711B2 (en) | 2001-06-06 | 2003-11-25 | Tokyo Electron Limited | Inductively-coupled plasma processing system |
| US6563092B1 (en) | 2001-11-28 | 2003-05-13 | Novellus Systems, Inc. | Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry |
| JP4128383B2 (ja) * | 2002-03-27 | 2008-07-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
| JP4381963B2 (ja) * | 2003-11-19 | 2009-12-09 | パナソニック株式会社 | プラズマ処理装置 |
| US8721791B2 (en) * | 2010-07-28 | 2014-05-13 | Applied Materials, Inc. | Showerhead support structure for improved gas flow |
| US9978565B2 (en) | 2011-10-07 | 2018-05-22 | Lam Research Corporation | Systems for cooling RF heated chamber components |
| US8901518B2 (en) | 2012-07-26 | 2014-12-02 | Applied Materials, Inc. | Chambers with improved cooling devices |
| US8970114B2 (en) * | 2013-02-01 | 2015-03-03 | Lam Research Corporation | Temperature controlled window of a plasma processing chamber component |
| TWI623960B (zh) * | 2013-03-27 | 2018-05-11 | Lam Research Corporation | 半導體製造設備及其處理方法 |
| JP2015018687A (ja) * | 2013-07-10 | 2015-01-29 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置 |
| US9885493B2 (en) * | 2013-07-17 | 2018-02-06 | Lam Research Corporation | Air cooled faraday shield and methods for using the same |
| US9484214B2 (en) * | 2014-02-19 | 2016-11-01 | Lam Research Corporation | Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma |
| JP6410622B2 (ja) | 2014-03-11 | 2018-10-24 | 東京エレクトロン株式会社 | プラズマ処理装置及び成膜方法 |
| KR102262657B1 (ko) | 2014-10-13 | 2021-06-08 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US10332725B2 (en) * | 2015-03-30 | 2019-06-25 | Lam Research Corporation | Systems and methods for reversing RF current polarity at one output of a multiple output RF matching network |
-
2017
- 2017-11-15 US US15/814,139 patent/US11538666B2/en active Active
-
2018
- 2018-11-12 WO PCT/US2018/060240 patent/WO2019099313A1/en not_active Ceased
- 2018-11-12 CN CN201880074096.2A patent/CN111357075B/zh active Active
- 2018-11-12 KR KR1020207016869A patent/KR102667049B1/ko active Active
- 2018-11-12 CN CN202311514845.8A patent/CN117810058A/zh active Pending
- 2018-11-12 JP JP2020526991A patent/JP7384792B2/ja active Active
- 2018-11-13 TW TW113113687A patent/TWI883911B/zh active
- 2018-11-13 TW TW107140157A patent/TWI796382B/zh active
- 2018-11-13 TW TW112105506A patent/TWI842395B/zh active
-
2022
- 2022-12-20 US US18/085,241 patent/US20230121097A1/en active Pending
-
2023
- 2023-11-09 JP JP2023191210A patent/JP7600344B2/ja active Active
-
2024
- 2024-12-04 JP JP2024210829A patent/JP2025029110A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003273085A (ja) | 2002-03-18 | 2003-09-26 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
| JP2004360061A (ja) | 2003-05-13 | 2004-12-24 | Tokyo Electron Ltd | 処理装置及びその使用方法 |
| JP2012211359A (ja) | 2011-03-31 | 2012-11-01 | Mitsubishi Heavy Ind Ltd | プラズマ処理装置 |
| US20170103875A1 (en) | 2011-10-07 | 2017-04-13 | Lam Research Corporation | Temperature Control in RF Chamber with Heater and Air Amplifier |
| US20140020837A1 (en) | 2012-07-20 | 2014-01-23 | Applied Materials, Inc. | Inductively coupled plasma source with multiple dielectric windows and window-supporting structure |
| JP2015531163A (ja) | 2012-07-20 | 2015-10-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 対称フローチャンバを有する対称誘導結合プラズマ源 |
| JP2017143059A (ja) | 2016-01-11 | 2017-08-17 | ラム リサーチ コーポレーションLam Research Corporation | プラズマエッチングチャンバのための高速インピーダンス切り替えを備えた変圧器結合容量性同調回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI883911B (zh) | 2025-05-11 |
| TWI842395B (zh) | 2024-05-11 |
| JP2024012547A (ja) | 2024-01-30 |
| TW201933473A (zh) | 2019-08-16 |
| KR102667049B1 (ko) | 2024-05-20 |
| JP2021503183A (ja) | 2021-02-04 |
| TW202322182A (zh) | 2023-06-01 |
| US20230121097A1 (en) | 2023-04-20 |
| TW202437333A (zh) | 2024-09-16 |
| WO2019099313A1 (en) | 2019-05-23 |
| CN111357075B (zh) | 2023-12-05 |
| CN111357075A (zh) | 2020-06-30 |
| TWI796382B (zh) | 2023-03-21 |
| KR20240074898A (ko) | 2024-05-28 |
| CN117810058A (zh) | 2024-04-02 |
| US11538666B2 (en) | 2022-12-27 |
| KR20200075012A (ko) | 2020-06-25 |
| US20190148118A1 (en) | 2019-05-16 |
| JP7600344B2 (ja) | 2024-12-16 |
| JP2025029110A (ja) | 2025-03-05 |
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