KR102613318B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102613318B1
KR102613318B1 KR1020160170172A KR20160170172A KR102613318B1 KR 102613318 B1 KR102613318 B1 KR 102613318B1 KR 1020160170172 A KR1020160170172 A KR 1020160170172A KR 20160170172 A KR20160170172 A KR 20160170172A KR 102613318 B1 KR102613318 B1 KR 102613318B1
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transistor
circuit
gate
terminal
wiring
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KR20170077792A (ko
Inventor
가즈아키 오시마
기요시 가토
도모아키 아츠미
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/325—Power saving in peripheral device
    • G06F1/3275—Power saving in memory, e.g. RAM, cache
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L29/7869—
    • H01L29/78696—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H10D86/215—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI comprising FinFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
KR1020160170172A 2015-12-28 2016-12-14 반도체 장치 Active KR102613318B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2015-256670 2015-12-28
JP2015256670 2015-12-28
JP2015257567 2015-12-29
JPJP-P-2015-257567 2015-12-29

Publications (2)

Publication Number Publication Date
KR20170077792A KR20170077792A (ko) 2017-07-06
KR102613318B1 true KR102613318B1 (ko) 2023-12-14

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US (1) US9818750B2 (enExample)
JP (1) JP6869021B2 (enExample)
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9847406B2 (en) 2015-08-27 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, storage device, resistor circuit, display device, and electronic device
JP6811084B2 (ja) 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置
JP6858549B2 (ja) 2015-12-28 2021-04-14 株式会社半導体エネルギー研究所 半導体装置、記憶装置
US9953695B2 (en) 2015-12-29 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and semiconductor wafer
JP6827328B2 (ja) 2016-01-15 2021-02-10 株式会社半導体エネルギー研究所 半導体装置及び電子機器
US10250247B2 (en) 2016-02-10 2019-04-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10236875B2 (en) 2016-04-15 2019-03-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for operating the semiconductor device
KR102367787B1 (ko) 2016-06-30 2022-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 동작 방법
US10192871B2 (en) 2016-09-23 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10685983B2 (en) 2016-11-11 2020-06-16 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
CN110352559B (zh) 2017-03-03 2023-11-14 株式会社半导体能源研究所 半导体装置及半导体装置的驱动方法
KR20200009023A (ko) * 2017-05-19 2020-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 또는 기억 장치
WO2018236064A1 (ko) 2017-06-20 2018-12-27 주식회사 엘지화학 다층 구조 고분자 고체 전해질 및 이를 포함하는 전고체 전지
KR102631152B1 (ko) * 2017-08-04 2024-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2019111113A1 (ja) * 2017-12-06 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
WO2019111112A1 (ja) * 2017-12-08 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
KR102617170B1 (ko) * 2017-12-27 2023-12-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
TWI829663B (zh) * 2018-01-19 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置以及其工作方法
US11909397B2 (en) * 2018-10-25 2024-02-20 Semiconductor Energy Laboratory Co., Ltd. Detecting device and semiconductor device
US11289475B2 (en) * 2019-01-25 2022-03-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
JPWO2021105828A1 (enExample) 2019-11-29 2021-06-03
US12387805B2 (en) 2019-12-13 2025-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
JP7711071B2 (ja) * 2020-09-06 2025-07-22 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US11699391B2 (en) 2021-05-13 2023-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display apparatus, and electronic device
CN114496032B (zh) * 2022-01-14 2025-07-29 安徽大学 一种基于阻变式存储器实现高速逻辑运算的4t3r电路结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015164386A (ja) 2013-08-21 2015-09-10 株式会社半導体エネルギー研究所 チャージポンプ回路、およびそれを備えた半導体装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4336466A (en) * 1980-06-30 1982-06-22 Inmos Corporation Substrate bias generator
JPH04251494A (ja) * 1991-01-04 1992-09-07 Nec Corp 半導体メモリ
JPH0634322U (ja) * 1992-10-06 1994-05-06 秀夫 大西 電力増幅器
KR0169157B1 (ko) * 1993-11-29 1999-02-01 기다오까 다까시 반도체 회로 및 mos-dram
WO2012026503A1 (en) 2010-08-27 2012-03-01 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
US9076505B2 (en) 2011-12-09 2015-07-07 Semiconductor Energy Laboratory Co., Ltd. Memory device
DE102013207324A1 (de) 2012-05-11 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und elektronisches Gerät
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9935633B2 (en) 2015-06-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Logic circuit, semiconductor device, electronic component, and electronic device
US9847406B2 (en) 2015-08-27 2017-12-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, storage device, resistor circuit, display device, and electronic device
US9509213B1 (en) * 2015-10-22 2016-11-29 Giantec Semiconductor, Ltd. Inc. Charge pump circuit suitable for low voltage operation
JP6811084B2 (ja) * 2015-12-18 2021-01-13 株式会社半導体エネルギー研究所 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015164386A (ja) 2013-08-21 2015-09-10 株式会社半導体エネルギー研究所 チャージポンプ回路、およびそれを備えた半導体装置

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JP2017121046A (ja) 2017-07-06
US20170186749A1 (en) 2017-06-29
KR20170077792A (ko) 2017-07-06
US9818750B2 (en) 2017-11-14
JP6869021B2 (ja) 2021-05-12

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