KR102611272B1 - 정전기 방전 보호 기능이 있는 포토마스크 - Google Patents

정전기 방전 보호 기능이 있는 포토마스크 Download PDF

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Publication number
KR102611272B1
KR102611272B1 KR1020217013246A KR20217013246A KR102611272B1 KR 102611272 B1 KR102611272 B1 KR 102611272B1 KR 1020217013246 A KR1020217013246 A KR 1020217013246A KR 20217013246 A KR20217013246 A KR 20217013246A KR 102611272 B1 KR102611272 B1 KR 102611272B1
Authority
KR
South Korea
Prior art keywords
esd
edge
comb
photomask
line
Prior art date
Application number
KR1020217013246A
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English (en)
Korean (ko)
Other versions
KR20210062699A (ko
Inventor
펑 지앙
유핑 무
홍 팡
Original Assignee
양쯔 메모리 테크놀로지스 씨오., 엘티디.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 양쯔 메모리 테크놀로지스 씨오., 엘티디. filed Critical 양쯔 메모리 테크놀로지스 씨오., 엘티디.
Publication of KR20210062699A publication Critical patent/KR20210062699A/ko
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Publication of KR102611272B1 publication Critical patent/KR102611272B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020217013246A 2019-01-17 2019-01-17 정전기 방전 보호 기능이 있는 포토마스크 KR102611272B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/072122 WO2020147059A1 (fr) 2019-01-17 2019-01-17 Photomasque à protection contre les décharges électrostatiques

Publications (2)

Publication Number Publication Date
KR20210062699A KR20210062699A (ko) 2021-05-31
KR102611272B1 true KR102611272B1 (ko) 2023-12-06

Family

ID=66938492

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217013246A KR102611272B1 (ko) 2019-01-17 2019-01-17 정전기 방전 보호 기능이 있는 포토마스크

Country Status (7)

Country Link
US (1) US11493842B2 (fr)
EP (1) EP3850431B1 (fr)
JP (1) JP7295237B2 (fr)
KR (1) KR102611272B1 (fr)
CN (1) CN109891317B (fr)
TW (1) TWI696883B (fr)
WO (1) WO2020147059A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002055438A (ja) * 2000-06-01 2002-02-20 United Microelectron Corp Ｅｓｄ保護機能を有するフォトマスク
US20030213612A1 (en) 2002-05-16 2003-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Guard ring having electrically isolated lightening bars
US20070066006A1 (en) * 2003-12-30 2007-03-22 Semiconductor Manufacturing International (Shanghai) Corporation Method and Structure for Electrostatic Discharge Protection of Photomasks

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63265246A (ja) * 1987-04-22 1988-11-01 Nec Corp レチクル
JPH05100410A (ja) * 1991-10-07 1993-04-23 Nec Corp レチクル
JP2000098592A (ja) 1998-09-25 2000-04-07 Seiko Epson Corp マスク製造
EP1055153B1 (fr) * 1998-12-14 2012-01-18 Nxp B.V. Photomasque dont le bord est dote d'une zone de protection annulaire contre les decharges electrostatiques
KR20010088340A (ko) * 2000-03-10 2001-09-26 포만 제프리 엘 정전기 방전으로부터 레티클을 격리시키는 방법
US6365303B1 (en) * 2000-04-24 2002-04-02 Taiwan Semiconductor Manufacturing Company Electrostatic discharge damage prevention method on masks
TW543178B (en) * 2002-03-15 2003-07-21 Taiwan Semiconductor Mfg Mask to prevent electrostatic discharge
CN1212542C (zh) * 2002-05-15 2005-07-27 台湾积体电路制造股份有限公司 防止静电破坏的光罩
JP4673039B2 (ja) 2004-11-05 2011-04-20 株式会社東芝 マスクブランクス基板
US7387855B2 (en) 2005-01-10 2008-06-17 Taiwan Semiconductor Manufacturing Co., Ltd Anti-ESD photomask blank
JP2008241921A (ja) * 2007-03-26 2008-10-09 Toray Ind Inc フォトマスク、およびフォトマスクの製造方法
CN104332466A (zh) * 2014-04-25 2015-02-04 上海华虹宏力半导体制造有限公司 静电保护器件结构
KR101652803B1 (ko) * 2014-08-27 2016-09-01 (주)마이크로이미지 정전기 배출 구조를 가지는 크롬 마스크
CN205374980U (zh) * 2016-02-03 2016-07-06 中芯国际集成电路制造(北京)有限公司 防静电破坏光罩
CN108107671B (zh) * 2016-11-25 2022-03-15 中芯国际集成电路制造(上海)有限公司 一种防静电光罩

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002055438A (ja) * 2000-06-01 2002-02-20 United Microelectron Corp Ｅｓｄ保護機能を有するフォトマスク
US20030213612A1 (en) 2002-05-16 2003-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Guard ring having electrically isolated lightening bars
US20070066006A1 (en) * 2003-12-30 2007-03-22 Semiconductor Manufacturing International (Shanghai) Corporation Method and Structure for Electrostatic Discharge Protection of Photomasks

Also Published As

Publication number Publication date
US20200233298A1 (en) 2020-07-23
JP2022509247A (ja) 2022-01-20
WO2020147059A1 (fr) 2020-07-23
US11493842B2 (en) 2022-11-08
TW202028853A (zh) 2020-08-01
EP3850431A4 (fr) 2022-04-27
CN109891317A (zh) 2019-06-14
CN109891317B (zh) 2020-11-17
EP3850431A1 (fr) 2021-07-21
JP7295237B2 (ja) 2023-06-20
EP3850431B1 (fr) 2023-06-14
TWI696883B (zh) 2020-06-21
KR20210062699A (ko) 2021-05-31

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