543178 A7 B7 五、發明説明（ 5-1 本發明揭露一種有關於光罩之防靜電設計，特别是 确關一種利用氣作光罩時加曝類似避雷針之圖案以及時將 可能產生之靜電荷以弧光放電的方式導掉，以避免其累 積，而損及光罩上之圖案。 ' 5-2發明背j : 在半導體製程之中，不僅是層層之製程品管需要嚴 密監控，以防止任何損及良率之事件產生，元件之設計也 朝向縮小尺寸，以提高單位面積之聚集度，並提高元件功 能；更重要的是提高產品的經濟價値。然而由於伴隨聚集 度的快速升高，内連線更密集，@使得設計規範咖一 rule)、冑影製考呈、敍刻技術同步加高其難度。此外，不 但MOSFET閘極氧化層由於變薄而t ^ 0 f (e丨ect「iC static discha「ge;簡稱ESD)的行爲敏咸，需要 以ESD電路防護電路來防止，甚至 丈上砗的光罩都對ESD 行爲敏感。 (請先閲讀背面之注意事項再填寫本頁) 訂. 經濟部智慧財產局員工消費合作社印製 光罩通常利用透明物做戽底缸 為辰板’形成於底板上之不 透明物質形成圖案將做爲轉換於光 呀、尤阻上之圖案，在製作此 圖案必須十分之精確，因爲任何形， N巧成於圖案上之小孔或缺 /8 五、 發明 說明（ A7 B7 角都將會變成爲光阻圖案之一部份，而傳统之 成# 先罩之會造 &静電集中於光罩上圖案尖角之處，此過庋集 说、 τ疋靜黾形 /南電場而造成缺角崩潰，此現象將形成圖案之缺角無法 對圖案做正確之轉換，且因光罩圖案约爲半導 奮 丁賊日日圓上圖 I的四至五倍放大，因此光罩上若有微小的異 ψ m ^ 、书也會造成 y普的放大。對於後續之微影製程影響十分巨大。 舉例來説’光罩係經由微影技術在不導泰 、 料 于更的玻璃材 貝如石英覆以金屬鉻箔，再以電子朿在金屬鉻箔形成圖案 所構成。光罩由於操作之工程師手的碰觸或者由 π阳於和光罩 U疋架的碰觸或者平時之堆放位置都可能造成靜電的累 積’當靜電累積至一定程度時，若沒有適當的靜電引導路 傻’便會經由光罩上之導線間放電，而造成污染的粒子， 甚至更嚴重的是造成鉻圖案的架橋（bridge)現象。 明目的及概.诚： 經濟部智莛財產局員工消費合作社印製 本發明之目的爲提供一種光罩之結構，此光罩之結 構可以提高靜電放電之保護能力。 本發明之另一目的係提供一種具相同謗導電位之防 止靜電放電之光罩結構。 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)543178 A7 B7 V. Description of the Invention (5-1 The present invention discloses an anti-static design related to a photomask, and in particular it is related to the use of gas as a photomask to add a pattern similar to a lightning rod to the electrostatic charge that may be generated in time to The arc discharge method is used to avoid accumulation and damage the pattern on the photomask. '5-2 Invention Back: In the semiconductor process, not only the layers of the process quality control need to be closely monitored to prevent any The event of damage to the yield rate, the design of the component is also reduced in size to increase the degree of aggregation per unit area and improve the function of the component; more importantly, increase the economic price of the product. However, due to the rapid increase in the degree of aggregation, the internal The connection is more intensive, @ makes the design specifications (a rule), the film production test, and the engraving technology simultaneously increase its difficulty. In addition, not only the gate oxide layer of the MOSFET is thinner, but t ^ 0 f (e 丨 ect "iC static discha" (ESD) for short) behaves sensitively, and it is necessary to prevent it with ESD circuit protection circuit, and even to measure the light on it. The masks are sensitive to ESD behavior. (Please read the precautions on the back before filling this page) Order. The printed masks of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs usually use transparent materials to make the bottom cylinder for the Chen board. The pattern formed by the opaque substance will be used as a pattern that is converted to light, especially resistance. In making this pattern, it must be very accurate, because any shape, N is formed in the small hole or missing in the pattern. 5. Description of the invention ( The corners of A7 and B7 will all become part of the photoresist pattern, and the traditional one will be made first. The static electricity is concentrated at the sharp corners of the pattern on the photomask. The sigmoid / south electric field causes the missing corner to collapse. This phenomenon will form the missing corner of the pattern. The pattern can not be converted correctly, and the mask pattern is about four to five times as large as the figure I in the figure above. Therefore, if there is a slight difference ψ m ^ on the reticle, The book will also cause Y magnification. It will have a huge impact on the subsequent lithography process. For example, the photomask is made of lithographic technology, such as quartz and metal chromium foil, through lithography technology. Electron 朿 is used to form a pattern on the metal chrome foil. The photomask may be subject to the accumulation of static electricity due to the touch of the engineer ’s hand or the contact between π and the photomask U 疋 frame or the usual stacking position. When accumulated to a certain degree, if there is no appropriate static electricity to guide the road fool, it will discharge through the wires on the photomask, causing polluting particles, and even more serious is the bridge phenomenon of chrome pattern. Sincere: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The purpose of the present invention is to provide a photomask structure which can improve the protection ability of electrostatic discharge. Another object of the present invention is to provide The structure of the photomask with the same conductivity level to prevent electrostatic discharge. This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back first (Fill in this page again)
543178 A7 B7 五、.發明説明（） 本發明係一種防止靜電破壞之光罩設計，利用光可 穿透之材料作爲光罩基座，光罩基座上具有整合電路圖 案，此光罩圖案將作爲轉換至晶圓之圖案，此光罩圖案係 利用導電但不透光之鉻金屬所構成。爲防止靜電荷累積放 電效應，首先在光罩上之鉻金屬接近邊緣處形成一環形圖 案，其中該環形圖案具內封環，與彼此相隔等距且與內封 環成平行排列之複數個分離外封環。而，內、外封環間具 有複數個微細小針，每一微細小針的一端分別和內、外封 環之其中之一連接，另一端則和對應之內、外封環保留一 空隙。其中上述之每個分離外封環僅連接一根微細小針。 5-4圖示簡單說明： 由以下本發明中較佳具體實施例之細節描述，可以 對本發明之目的、觀點及.優點有更佳的了解。同時參考下 列本發明之圖式加以說明： 第一圖所示爲依據本發明之實施例在覆以金屬鉻箔 之木導電的玻璃材質之邊緣處形成環形圖案之槪略圖。 第二圖所示爲依據本發明之實施例之部分環形圖案 放大槪略圖。 第二圖所不爲微細小針形成橋接現像之槪略圖。 第四圖所示爲依據本發明之實施例形成分離外封環 4 本纸張尺度適用中國國家標準(CNS)A4規格(210X297公釐） 裝.........訂---------線 (請先閲讀背面之注意事項再場寫本頁) 543178 A7 ΒΊ_ 五、發明説明（) 概略圖。 (請先閱讀背面之注意事項再填寫本頁) 圖號對照說明： 1 0玻璃材質 1 2 外封環 1 4内封環 16微細小針 18 整合電路圖案 20環形圖案 22空隙 24橋接 26分離外封環 5-5發明詳細說明： 經濟部智惡財產局員工消費合作社印製 在不限制本發明之精神及應用範圍之下，以下即 以一實施例，介紹本發明之實施；熟悉此領域技藝者， 在瞭解本發明之精神後，當可應用此方法於各種不同之 具靜電放電保護之光罩設計中。藉由本發明之結構，可 以有效將靜電荷導引至位於光罩鉻金屬上，接近邊緣處 環形圖案中，避免累積之靜電荷來經由光罩内最脆弱之 部分釋放，造成光罩損壞。本發明之應用當不僅限於以 下所述之實施例。 一如發明背景所述，靜電放電的問題已不只是發 生於晶片接腳的碰觸再傳至内部元件而已，它也會發生 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 543178 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 在更上游之光罩上。特别是當積體電路元件微小化，聚 集度高的今曰，其影響性將更嚴重，這是因光罩圖案約 爲半導體晶圓上圖案的四至五倍放大，因此光罩上若有 微小的異常也會造成影響的放大。因此一片光罩，可能 在曝前幾批的晶圓時沒問題，但其後可能由於外部之靜 電影響，造成光罩上之I C圖案損壞，使得經由此光罩曝 光後之晶圓，產生電性失敗，其影響所及，將造成良率 的快速下降。因此本發明即是針對此點，提出一種可防 止靜電破壞的光罩設計。 請參考第一圖所示，在覆以金屬鉻箔之不導電的玻 璃材質1 0，如石英上，在接近此玻璃材質1 0之邊緣處形 成一如護城河的環形圖案2 0，此環形圖案2 0包括内封環 1 4與外封環1 2，於環形圖案内側爲整合電路圖案1 8。 經濟部智慧財產局員工消費合作社印製 接著請參閱第二圖所示爲環形圖案2 0的部分區域 放大圖，係包含複數條（通常是數百至數千條金屬鉻的微 細小針1 6所形成的一環形圖案2 0。其中内封環1 4與外 封環1 2間有複數個微細小針1 6，且每一該微細小針1 6 的一端與内封環 1 4或外封環 1 2的其中之一連接，另一 端則和對應的内封環1 4或外封環1 2間保留一空隙22。 亦即，若一微細小針16係銜接於外封環1 2上，而與内 封環1 4間留有一空隙，則與其臨接之另一微細小針1 6 6 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 543178 經濟部智莛財產局員工消費合作社印製 A7 B7 五、發明説明（） 則係銜接於内封環1 4上，而與外封環1 $間留有一空隙 其中此2隙22係用以將靜電進行放電。由於本發明之環 形圖案2 0係位於整合電路圖案1 8之外圍，且每一微細 小針1 6係和光罩用來遮蔽光線的金屬同材質，於本最佳 實施例中係爲金屬鉻，因此，可以很容易的藉由製作光罩 時同時形成，所以可降低成本。 其中上述之微細小針彳6的形成係在以電子朿寫入 光罩圖案於鉻箔時，同時進行寫入此數千支微細小針巧6 的圖案。根據本發明之一較佳實施例，每一微細小針1 6 和内封環1 4或外封環1 2間具有一保留空隙2 2，而每一 微細小針1 6其寬度W2，在以〇. 1 8μηι之製程下，约爲 0.72μηη寬，且保留空隙22之寬度W1會等於W2。當受 到外界乾燥之環境或工作人員不經意的碰撞或磨擦造成# 電時’微細小針1 6可以經由空隙2 2放電至内封環1 4或 外封環1 2上。其中微細小針16彼此間的間隔，亦即圖 中W之寬度约爲1〇〇〇μΓη。 然而這傳統之光罩設計圖案卻存在一種潛在之危 險。參閲第三圖，一旦部分之細微小針1 6，因靜電累積 而放電，造成其與所對應的内封環1 4或外封環彳2間產 生橋接現像’如圖號2 4所示。此時由於内封環1 4與外 封環1 2將因此橋接而連接在一起，造成欲形成下一次因 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ------- .* » « ----I---'•訂 (請先閲讀背面之注意事項再填寫本頁)543178 A7 B7 V. Description of the invention () The present invention is a mask design to prevent electrostatic damage. The light-transmissive material is used as the mask base. The mask base has an integrated circuit pattern. This mask pattern will As a pattern transferred to a wafer, this mask pattern is made of a conductive but opaque chrome metal. In order to prevent the electrostatic discharge accumulation discharge effect, a ring pattern is first formed near the edge of the chrome metal on the photomask, wherein the ring pattern has an inner sealing ring, a plurality of separations which are equidistant from each other and arranged in parallel with the inner sealing ring. Outer seal ring. In addition, there are a plurality of tiny pins between the inner and outer seal rings, one end of each of the tiny pins is connected to one of the inner and outer seal rings respectively, and the other end keeps a gap with the corresponding inner and outer seal rings. Each of the above-mentioned separate outer sealing rings is connected to only one tiny needle. 5-4 Brief description of the diagram: The object, viewpoint, and advantages of the present invention can be better understood from the following detailed description of the preferred embodiments of the present invention. At the same time, it is explained with reference to the following drawings of the present invention: The first figure shows a schematic diagram of a ring pattern formed on the edge of a wood conductive glass material covered with a metal chromium foil according to an embodiment of the present invention. The second figure shows an enlarged view of a part of the circular pattern according to the embodiment of the present invention. The second picture is not a sketch of the tiny needles forming a bridge phenomenon. The fourth figure shows the formation of a separate outer sealing ring according to the embodiment of the present invention. 4 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm). ------ Line (please read the notes on the back before writing this page) 543178 A7 ΒΊ_ V. Outline of the invention (). (Please read the precautions on the back before filling in this page) Drawing number comparison description: 1 0 glass material 1 2 outer seal ring 1 4 inner seal ring 16 fine needle 18 integrated circuit pattern 20 ring pattern 22 gap 24 bridge 26 separate outer seal The detailed description of the invention of Ring 5-5: Printed by the Consumer Cooperatives of the Intellectual Property Office of the Ministry of Economic Affairs without limiting the spirit and scope of the invention, the following is an example to introduce the implementation of the invention; those skilled in the art of this field After understanding the spirit of the present invention, this method can be applied to a variety of different photomask designs with electrostatic discharge protection. With the structure of the present invention, the electrostatic charge can be effectively guided to the chrome metal located on the photomask near the edge in a circular pattern, preventing the accumulated electrostatic charge from being released through the most fragile part in the photomask, causing damage to the photomask. The application of the present invention is not limited to the embodiments described below. As mentioned in the background of the invention, the problem of electrostatic discharge is not only caused by the contact of the chip pins and then transmitted to the internal components, it also occurs. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm). 543178 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling in this page) On the upstream photomask. Especially when the integrated circuit components are miniaturized and the degree of aggregation is high, the influence will be more serious. This is because the mask pattern is about four to five times larger than the pattern on the semiconductor wafer. Anomalies can also cause amplification of effects. Therefore, a photomask may be okay when exposing the first few wafers, but the IC pattern on the photomask may be damaged afterwards due to external static effects. As a result, the wafer exposed through this photomask may generate electricity. Sexual failure, as far as its impact is concerned, will cause a rapid decline in yield. Therefore, the present invention is directed to this point, and proposes a photomask design that can prevent electrostatic damage. Please refer to the first picture. On a non-conductive glass material 10 covered with metal chrome foil, such as quartz, a ring pattern 20 like a moat is formed near the edge of this glass material 10. This ring pattern 20 includes an inner sealing ring 14 and an outer sealing ring 12. Inside the circular pattern is an integrated circuit pattern 18. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Please refer to the second figure for an enlarged view of a part of the circle pattern 20, which contains a small number of fine needles (usually hundreds to thousands of small metallic chromium needles). A ring pattern 20 is formed. Among them, there are a plurality of fine pins 16 between the inner seal ring 14 and the outer seal ring 12, and one end of each of the fine pins 16 and the inner seal ring 14 or the outer seal ring 1 One of 2 is connected, and the other end is left with a gap 22 between the corresponding inner sealing ring 14 or the outer sealing ring 12. That is, if a small pin 16 is connected to the outer sealing ring 12, and There is a gap between the inner sealing rings 1 and 4, another small needle 1 6 6 adjacent to this paper. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 543178 printed by the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System A7 B7 V. Description of the invention () is connected to the inner sealing ring 1 4 and a gap is left between the outer sealing ring 1 $ and the 2 gap 22 is used to discharge static electricity. Because of the circular pattern of the present invention 2 0 series is located on the periphery of the integrated circuit pattern 18, and each tiny pin 16 series and light The same material used to shield the light from the metal is metallic chromium in this preferred embodiment, so it can be easily formed at the same time when the photomask is made, which can reduce costs. When the mask pattern is written on the chrome foil with an electron beam, the pattern of writing these thousands of fine pins 6 is performed simultaneously. According to a preferred embodiment of the present invention, each fine pin 16 and the inner seal are written. The ring 14 or the outer seal ring 12 has a reserved space 22 between them, and each fine pin 16 has a width W2 of about 0.72 μηη wide in a process of 0.1 8 μηι, and the width of the reserved gap 22 W1 will be equal to W2. When it is caused by a dry environment outside or accidental collision or friction by the staff # When the electricity is fine, the tiny needle 16 can be discharged to the inner seal ring 14 or the outer seal ring 12 through the gap 2 2. The distance between the small needles 16, that is, the width of W in the figure is about 1000 μΓη. However, this traditional mask design pattern has a potential danger. Refer to the third figure, once some of the fine needles 16 Discharge due to static accumulation A bridging phenomenon between the corresponding inner seal ring 14 or outer seal ring 彳 2 is shown in Fig. 24. At this time, because the inner seal ring 14 and the outer seal ring 12 will be bridged and connected together, Causes the formation of the next time because this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -------. * »« ---- I --- '• Order (Please read the back first (Notes for filling in this page)
A7 B7 細微小釺μ靜電累積放電 更大之電位差。但再如此大之靜^:橋接現像時，需 合電路之損壞。 下可说造成内部 參閱第四圖，因此，爲了 電放電保護電位差異之發生述因橋接而造成 式，讓外封環之距離:成:用電子東寫-之 中每-塊分離外封環26具有等同分離之狀況。 寺距離W3’而每一分離外封 ’且彼此間具A7 B7 Subtle 釺 μ electrostatic accumulated discharge Larger potential difference. But so much quieter ^: When bridging the phenomenon, the circuit must be damaged. The following can be said to cause the inside to refer to the fourth figure, so for the occurrence of the difference in electrical discharge protection potential, due to bridging, let the distance of the outer seal ring: Cheng: write with electronic east-separate each outer block 26 has a state of equal separation. Distant distance W3 ’and each separate outer seal’ and each other has
1 6。以太Β社〜 6均僅具有—細裰I 以本瑕佳實施例而言，分離 、，田微小 W3與空陴0〇 、 、展比此間之 '一隙22 (寬度w"目等，亦即以01ft (距 言，其距離….72_。 018_之製程 當分離外封環26之内部有靜 分離外封产累積時’靜電奋 卜封％ 26傳至微細小針]s經空 兒曰 本發明係使用彼此獨立分離之外封環·、 $。由於 小針1 6之靜電军_访雷，所i决 ’因此上述細 〈靜U積放 <，所&成之内封環14與 炙橋接現像，係爲獨立事件，亦 、衣 ! 母一分離外产 疋橋接現像，並不會影響到整個靜電放電所應承成、衣 差：因此本發明具有等同之承受靜電放電能力並二：： 别之橋接現像，而造成承受靜電之伏動。 以上所述僅爲本發明之較佳實施 並非用 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐） ------——— -丨訂 ..... (請先閲讀背面之注意事項再填寫本頁> _ 經濟部智^財產局員工消費合作社印製 543178 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 限定本發明之申請專利範圍；凡其它未脱離本發明所揭示 之精神下所完成之等效改變或修飾，例如微細小針1 6也 不限定要細長形，其形狀可以做多種的變化，如中間較粗 接近空隙處變細，或一端粗另一端接近空隙處細尖等各式 形狀皆可。均應包含在下述之申請專利範圍内。 經濟部智慧財產局員工消費合作社印製 9 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)1 6. Ether B company ~ 6 only has-fine I. In the case of this flawed example, the separation, the field micro W3 and the space 0 0, and the ratio of the gap between the 22 (width w " head, etc., also That is to say, 01ft (distance, its distance ... 72. __ 018_ process when there is a static separation outer seal inside the outer seal ring 26 accumulation of static electrostatic seal seal% 26 passed to the small needle) The present invention uses an outer sealing ring separated from each other. $. Since the small needle 16 of the electrostatic force _ visits Lei, it is determined that the above-mentioned fine static accumulation <, so & Cheng inner sealing ring 14 It is an independent event with the bridging bridge phenomenon. It is also an independent event. The separation of the mother ’s and bridging bridge phenomenon does not affect the overall electrostatic discharge performance and poor clothing: Therefore, the present invention has the same ability to withstand electrostatic discharge. ：： The other bridge phenomenon causes static electricity undulation. The above is only the preferred implementation of the present invention. It does not apply the Chinese National Standard (CNS) A4 specification (210X297 mm) with this paper size ----- -————-丨 Order ..... (Please read the notes on the back before filling in this page> _ 经Printed by the Ministry of Intellectual Property Bureau employee consumer cooperative 543178 A7 B7 V. Description of the invention () (Please read the notes on the back before filling this page) Limit the scope of patent application for this invention; all others that do not depart from the disclosure of this invention Equivalent changes or modifications done under the spirit, for example, small needles 16 are not limited to being slender, and the shape can be changed in various ways, such as thinner in the middle and thinner near the gap, or one end thicker and the other close to the gap. All kinds of shapes can be used. All should be included in the scope of patent application below. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 9 This paper size applies to China National Standard (CNS) A4 (210X297 mm).