SG112876A1 - Photomask structure for preventing static electricity - Google Patents

Photomask structure for preventing static electricity

Info

Publication number
SG112876A1
SG112876A1 SG200301645A SG200301645A SG112876A1 SG 112876 A1 SG112876 A1 SG 112876A1 SG 200301645 A SG200301645 A SG 200301645A SG 200301645 A SG200301645 A SG 200301645A SG 112876 A1 SG112876 A1 SG 112876A1
Authority
SG
Singapore
Prior art keywords
static electricity
preventing static
photomask structure
photomask
preventing
Prior art date
Application number
SG200301645A
Inventor
Chi Wu Tien
Chen Kou-Chou
Hsu Huai-Jen
Huang George
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG112876A1 publication Critical patent/SG112876A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Elimination Of Static Electricity (AREA)
SG200301645A 2002-03-15 2003-03-13 Photomask structure for preventing static electricity SG112876A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091105010A TW543178B (en) 2002-03-15 2002-03-15 Mask to prevent electrostatic discharge

Publications (1)

Publication Number Publication Date
SG112876A1 true SG112876A1 (en) 2005-07-28

Family

ID=29729885

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301645A SG112876A1 (en) 2002-03-15 2003-03-13 Photomask structure for preventing static electricity

Country Status (2)

Country Link
SG (1) SG112876A1 (en)
TW (1) TW543178B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691547B2 (en) 2006-03-16 2010-04-06 Microtome Precision, Inc. Reticle containing structures for sensing electric field exposure and a method for its use
JP2009128558A (en) * 2007-11-22 2009-06-11 Hoya Corp Photomask and method for manufacturing photomask, and pattern transfer method
US10366956B2 (en) 2015-06-10 2019-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
TWI644494B (en) * 2017-03-23 2018-12-11 合勤科技股份有限公司 Electronic apparatus and overvoltage protection structure thereof
WO2020147059A1 (en) 2019-01-17 2020-07-23 Yangtze Memory Technologies Co., Ltd. Photomask with electrostatic discharge protection

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989754A (en) * 1997-09-05 1999-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD)
WO2000036468A1 (en) * 1998-12-14 2000-06-22 Koninklijke Philips Electronics N.V. Photomask with a mask edge provided with a ring-shaped esd protection area
TW441071B (en) * 2000-01-10 2001-06-16 Taiwan Semiconductor Mfg Solving means for preventing the electrostatic destruction of mask
US6372390B1 (en) * 2000-06-01 2002-04-16 United Microelectronics Corp. Photo mask with an ESD protective function
TW518666B (en) * 2002-01-29 2003-01-21 Taiwan Semiconductor Mfg Photomask and method to prevent the photomask from charge effect and electro-static damage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989754A (en) * 1997-09-05 1999-11-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD)
WO2000036468A1 (en) * 1998-12-14 2000-06-22 Koninklijke Philips Electronics N.V. Photomask with a mask edge provided with a ring-shaped esd protection area
TW441071B (en) * 2000-01-10 2001-06-16 Taiwan Semiconductor Mfg Solving means for preventing the electrostatic destruction of mask
US6372390B1 (en) * 2000-06-01 2002-04-16 United Microelectronics Corp. Photo mask with an ESD protective function
TW518666B (en) * 2002-01-29 2003-01-21 Taiwan Semiconductor Mfg Photomask and method to prevent the photomask from charge effect and electro-static damage

Also Published As

Publication number Publication date
TW543178B (en) 2003-07-21

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