JPH05107740A - Reticle - Google Patents

Reticle

Info

Publication number
JPH05107740A
JPH05107740A JP27162491A JP27162491A JPH05107740A JP H05107740 A JPH05107740 A JP H05107740A JP 27162491 A JP27162491 A JP 27162491A JP 27162491 A JP27162491 A JP 27162491A JP H05107740 A JPH05107740 A JP H05107740A
Authority
JP
Japan
Prior art keywords
pattern
electrostatic breakdown
reticle
circuit pattern
light shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP27162491A
Other languages
Japanese (ja)
Inventor
Hiroyuki Shigemura
弘之 茂村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP27162491A priority Critical patent/JPH05107740A/en
Publication of JPH05107740A publication Critical patent/JPH05107740A/en
Pending legal-status Critical Current

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To detect whether or not an electrostatic breakdown is caused on a circuit pattern without requiring a large number of man-hours by forming a pattern for easily deciding whether or not the electrostatic breakdown is caused outside the light shield pattern of the reticle. CONSTITUTION:When the circuit pattern 2 and light shield pattern 3 are formed on a glass substrate 1, the electrostatic breakdown check pattern 4 is formed outside the light shield pattern 3. Namely, the electrostatic breakdown check pattern 4 is formed at a corner part of the light shield pattern 3 at a distance less than the minimum pattern interval in the circuit pattern. This pattern 4 is so structured that an acute pattern which causes the electrostatic breakdown more easily than the circuit pattern 2 faces the light shield pattern. Consequently, if the electrostatic breakdown occurs to the circuit pattern 2, an electrostatic breakdown is caused under the condition where the electrostatic breakdown occurs more easily than the circuit pattern 2. For the purpose, only this pattern is checked right before the reticle is used to detect whether or not the electrostatic breakdown occurs to the circuit pattern part.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体集積回路の製造に
用いられるレチクルに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle used for manufacturing a semiconductor integrated circuit.

【0002】[0002]

【従来の技術】半導体集積回路の微細パターン化に従っ
て、ウェハーに回路を焼き付ける露光機はステッパーが
主流となっている。ステッパーではウェハー上のパター
ンサイズの1〜10倍のパターンサイズを有するレチク
ルが使用される。レチクルを作成する為の回路パターン
の描画には主として電子ビーム露光装置が用いられる
が、この時、電子ビームに感光するレジストとして後の
プロセス処理工程で感光領域が残るネガ型レジストを用
いた場合にできあがるレチクルの構成は、従来、図5に
示す様に、透明なガラス基板1上にクロム、酸化クロム
等の遮光性金属膜で形成された回路パターン2及びその
周囲に形成された遮光パターン3とからなっていた。
2. Description of the Related Art Steppers have become the mainstream of exposure machines for printing circuits on a wafer according to the fine patterning of semiconductor integrated circuits. The stepper uses a reticle having a pattern size 1 to 10 times larger than the pattern size on the wafer. An electron beam exposure apparatus is mainly used for drawing a circuit pattern for creating a reticle. At this time, when a negative type resist that a photosensitive region remains in a subsequent process step is used as a resist that is exposed to an electron beam. As shown in FIG. 5, conventionally, the structure of the completed reticle includes a circuit pattern 2 formed of a light-shielding metal film such as chromium or chromium oxide on a transparent glass substrate 1 and a light-shielding pattern 3 formed around the circuit pattern 2. It consisted of

【0003】また、レジストとして後のプロセス処理工
程で感光領域が除去されるポジ型レジストを用いた場合
にできあがるレチクルの構成は図6に示す構成となって
いた。
Further, the structure of the reticle formed when a positive type resist whose photosensitive region is removed in the subsequent process step is used as the resist has the structure shown in FIG.

【0004】[0004]

【発明が解決しようとする課題】レチクルは、絶縁体で
あるガラス基板上に金属膜を有する構成となっているた
め、レチクルの製造工程あるいは使用工程があるクリー
ンルーム内の空気の流れや、レチクルの洗浄等で使用さ
れる純水による高圧シャワー水洗、あるいは、絶縁体の
レチクルキャリアや、ケース等との摩擦により帯電す
る。帯電量は大きい場合には数KVから数+KVに達す
ることがある。このためレチクルのパターン領域内に放
電現象が発生し、金属パターンの一部が破壊される、い
わゆる、静電破壊が生じることがあった。従来のレチク
ルは出荷検査終了後に上述した静電破壊が発生した場
合、回路パターンの一部が破壊されているため、正常な
半導体集積回路を製造することができずに拡散歩留りを
大きく低下させる原因となっていた。また、これを防止
するためにはレチクルを使用する直前に、パターン領域
を全て検査する必要があり、多大な工数をかけなければ
ならなかった。
Since the reticle has a structure in which a metal film is formed on a glass substrate which is an insulator, the flow of air in a clean room in which the reticle is manufactured or used, and the reticle It is charged by high-pressure shower water washing with pure water used for washing, or by friction with the reticle carrier of an insulator or the case. When the charge amount is large, it may reach several KV to several + KV. For this reason, a discharge phenomenon occurs in the pattern area of the reticle, and a part of the metal pattern is destroyed, so-called electrostatic breakdown may occur. If the above-mentioned electrostatic breakdown occurs in the conventional reticle after the completion of the shipping inspection, a part of the circuit pattern is destroyed, which makes it impossible to manufacture a normal semiconductor integrated circuit and causes a large decrease in diffusion yield. It was. Further, in order to prevent this, it is necessary to inspect the entire pattern area immediately before using the reticle, which requires a great number of man-hours.

【0005】[0005]

【課題を解決するための手段】本発明のレチクルは透明
基板の一主面に形成された回路パターンと該回路パター
ンの周囲に形成された遮光パターンとを有するレチクル
において遮光パターンの外側に静電破壊の有無をチェッ
クするためのパターンを有するものである。
A reticle of the present invention is a reticle having a circuit pattern formed on one main surface of a transparent substrate and a light-shielding pattern formed around the circuit pattern. It has a pattern for checking the presence or absence of destruction.

【0006】[0006]

【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の第1の実施例の概略図である。ガラ
ス基板1上に回路パターン2と遮光パターン3を形成す
る際に、該遮光パターンの外側に静電破壊チェックパタ
ーン4を形成する。
The present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram of a first embodiment of the present invention. When the circuit pattern 2 and the light shielding pattern 3 are formed on the glass substrate 1, the electrostatic breakdown check pattern 4 is formed outside the light shielding pattern.

【0007】図2は破壊チェックパターン分を拡大した
図である。遮光パターン3のコーナー分に回路パターン
内部に存在する最小パターン間隔よりも狭い距離に静電
破壊チェックパターン4が形成されている。該パターン
は回路パターンよりも静電破壊が発生しやすい様に鋭角
なパターンが遮光パターンに対向した構造となってい
る。
FIG. 2 is an enlarged view of the destruction check pattern. Electrostatic breakdown check patterns 4 are formed in the corners of the light-shielding pattern 3 at a distance narrower than the minimum pattern interval existing inside the circuit pattern. The pattern has a structure in which an acute-angled pattern faces the light-shielding pattern so that electrostatic breakdown is more likely to occur than the circuit pattern.

【0008】この様に構成されたレチクルにおいては回
路パターンに静電破壊が発生した場合、回路パターンよ
りも静電破壊が発生しやすい条件にある静電破壊チェッ
クパターンには必ず静電破壊が発生する。従ってこのパ
ターンのみをレチクル使用直前に検査すれば回路パター
ン部の静電破壊の有無を検出できる。すなわち静電破壊
チェックパターンに静電破壊が発生していた時だけ回路
パターン部を再検査して静電波の有無を検査すればよ
く、大巾な工数削減ができる。
In the reticle configured as described above, when electrostatic breakdown occurs in the circuit pattern, electrostatic breakdown always occurs in the electrostatic breakdown check pattern under the condition that electrostatic breakdown is more likely to occur than in the circuit pattern. To do. Therefore, if only this pattern is inspected immediately before using the reticle, the presence or absence of electrostatic breakdown of the circuit pattern portion can be detected. That is, it is sufficient to re-inspect the circuit pattern portion and inspect for the presence or absence of electrostatic waves only when electrostatic breakdown has occurred in the electrostatic breakdown check pattern, which can greatly reduce the number of steps.

【0009】尚、静電破壊チェックパターンの形状、位
置、数に関しては本実施例に限定されるものではないこ
とは自明である。
It is obvious that the shape, position and number of the electrostatic breakdown check pattern are not limited to those in this embodiment.

【0010】図3は本発明の第2の実施例の概略図であ
る。第1の実施例がネガ型レジストを用いた場合であっ
たのに対して本実施例はポジ型レジストを用いてレチク
ルの作成を行なった場合の例である。静電破壊チェック
パターは遮光パターンとして必要とされる領域の外側の
遮光パターン内に形成されている。
FIG. 3 is a schematic diagram of a second embodiment of the present invention. In contrast to the case where the negative resist is used in the first embodiment, this embodiment is an example in which the reticle is formed using the positive resist. The electrostatic breakdown check pattern is formed in the light-shielding pattern outside the area required as the light-shielding pattern.

【0011】図4は静電破壊チェックパターンの拡大図
である。遮光パターンと独立する様にかつ第1の実施例
で延べた様な形状を有するパターンが形成されている。
FIG. 4 is an enlarged view of the electrostatic breakdown check pattern. A pattern is formed which is independent of the light-shielding pattern and has a shape like that extended in the first embodiment.

【0012】[0012]

【発明の効果】以上説明したように本発明はレチクルの
遮光パターンの外側に静電破壊の有無を容易に判定でき
るパターンを形成したことにより、多大な工数を用いる
ことなく回数パターン上に発生する静電破壊の有無を検
出できる効果がある。
As described above, according to the present invention, since a pattern for easily determining the presence or absence of electrostatic breakdown is formed on the outer side of the light-shielding pattern of the reticle, the pattern is generated on the number-of-times pattern without using a lot of man-hours. It is effective in detecting the presence or absence of electrostatic breakdown.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例を示す図。FIG. 1 is a diagram showing a first embodiment of the present invention.

【図2】第1の実施例の静電破壊チェックパターン例を
示す図。
FIG. 2 is a diagram showing an example of an electrostatic breakdown check pattern according to the first embodiment.

【図3】第2の実施例を示す概略図。FIG. 3 is a schematic diagram showing a second embodiment.

【図4】第2の実施例の静電破壊チェックパターン例を
示す図。
FIG. 4 is a diagram showing an example of an electrostatic breakdown check pattern according to a second embodiment.

【図5】従来のレチクルの概略図。FIG. 5 is a schematic view of a conventional reticle.

【図6】従来のレクチルの概略図。FIG. 6 is a schematic view of a conventional reticle.

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 回路パターン 3 遮光パターン 4 静電破壊チェックパターン 1 Glass substrate 2 Circuit pattern 3 Light-shielding pattern 4 Electrostatic breakdown check pattern

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 透明基板の一主面に形成された回路パタ
ーンと、回路パターンの周囲に形成された遮光パターン
とを有するレチクルにおいて、前記遮光パターンの外側
に静電破壊チェック用パターンを有することを特徴とす
るレチクル。
1. A reticle having a circuit pattern formed on one main surface of a transparent substrate and a light-shielding pattern formed around the circuit pattern, wherein an electrostatic breakdown check pattern is provided outside the light-shielding pattern. Reticle characterized by.
JP27162491A 1991-10-21 1991-10-21 Reticle Pending JPH05107740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27162491A JPH05107740A (en) 1991-10-21 1991-10-21 Reticle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27162491A JPH05107740A (en) 1991-10-21 1991-10-21 Reticle

Publications (1)

Publication Number Publication Date
JPH05107740A true JPH05107740A (en) 1993-04-30

Family

ID=17502671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27162491A Pending JPH05107740A (en) 1991-10-21 1991-10-21 Reticle

Country Status (1)

Country Link
JP (1) JPH05107740A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006250988A (en) * 2005-03-08 2006-09-21 Toppan Printing Co Ltd Reticle
JP2012507750A (en) * 2008-10-31 2012-03-29 アルテラ コーポレイション Photolithographic reticle with electrostatic discharge protection structure

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006250988A (en) * 2005-03-08 2006-09-21 Toppan Printing Co Ltd Reticle
JP4529736B2 (en) * 2005-03-08 2010-08-25 凸版印刷株式会社 Reticle
JP2012507750A (en) * 2008-10-31 2012-03-29 アルテラ コーポレイション Photolithographic reticle with electrostatic discharge protection structure
JP2015180962A (en) * 2008-10-31 2015-10-15 アルテラ コーポレイションAltera Corporation Photolithographic reticle with electrostatic discharge protection structure

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