CN212965743U - Mask plate - Google Patents
Mask plate Download PDFInfo
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- CN212965743U CN212965743U CN202021857848.3U CN202021857848U CN212965743U CN 212965743 U CN212965743 U CN 212965743U CN 202021857848 U CN202021857848 U CN 202021857848U CN 212965743 U CN212965743 U CN 212965743U
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- mask plate
- light
- mask
- protective film
- static ring
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Abstract
The utility model discloses a mask plate, which comprises a light-transmitting substrate, a light absorption film and a mask protection film; the middle area of the lower side surface of the light-transmitting substrate is a pattern area, and the peripheral area is a contact area; the pattern area and the contact area are respectively covered with light absorption films with corresponding shapes; the light absorption film between the pattern area and the contact area is disconnected and forms an anti-static ring; the mask protective film is a transparent film and is attached to the lower side of a mask plate protective film frame; the mask plate protects the film frame from light penetration; the shape of the end of the mask plate protective film frame is consistent with that of the anti-static ring; the wall thickness of the upper end of the mask plate protective film frame is larger than or equal to the line width of the anti-static ring; the upper end of the mask plate protective film frame is adhered to the lower side surface of the light-transmitting substrate corresponding to the anti-static ring to shield the anti-static ring. When the stepping-scanning type photoetching machine adopts the mask plate for projection, the influence of the projection of the anti-static ring on the line width of the corresponding pattern area of the wafer can be completely eliminated.
Description
Technical Field
The utility model relates to an integrated circuit territory technique, concretely relates to mask blank that disappears.
Background
Photolithography is a key process in the fabrication of integrated circuits, and utilizes the principle of photochemical reaction to transfer a pattern prepared on a mask plate onto a wafer (wafer). The photoetching machine is a core device in the photoetching process, during exposure, processed parallel laser in the photoetching machine irradiates a mask plate, a pattern on the mask plate is projected onto the photoresist through a lens, and photochemical reaction is excited. With the advancement of lithography technology, lithography machines have been developed from initial contact exposure to step-and-scan exposure. In the step-and-scan exposure mode, the mask plate is not in direct contact with the wafer, and a plurality of lenses are arranged in the middle of the mask plate at intervals so as to ensure the quality and the reduction magnification of the projected pattern.
The mask plate is composed of a quartz glass plate 1, a light absorbing film 2 and a mask protecting film 3, and as shown in fig. 1, the quartz glass plate 1 has a very high light transmittance as a substrate. The light absorbing film 2 is mainly made of chromium (Cr) film or molybdenum silicide (MoSi) as a pattern carrier. The light penetration is blocked in the area with the light absorption film 2 on the mask plate, and the light in the area without the light absorption film 2 can penetrate and irradiate the surface of the wafer to perform photochemical reaction with the photoresist on the surface, so that the purpose of transferring the pattern from the mask plate to the surface of the wafer is achieved. The mask protection film 3 is a transparent film having a high transmittance, and is attached to a mask protection film frame (aluminum alloy frame) 4 and then attached to the quartz glass plate 1 with glue. The mask plate protective film 3 functions to prevent dust from falling on the patterned side of the mask plate.
The mask light absorption film 2 is usually made of a chromium film Cr or a molybdenum silicide film MoSi, which are metal conductive materials, as a pattern material. In the dense pattern area, under the condition that two non-communicated large chromium films are very close to each other in a certain small area, if the two non-communicated large chromium films are charged by static electricity, point discharge is very easily triggered to cause the chromium films nearby to be burnt out, so that the formed pattern is completely deformed or even directly conducted, and most of the sources of the charges are conducted onto a mask plate from contact objects other than the mask plate, such as a box for storing the mask plate, a mask plate bearing table during exposure and the like. In order to reduce the conduction of peripheral charges to the mask pattern region, a relatively wide chrome-free film strip is dug in the peripheral non-pattern region of the mask to isolate the light-absorbing film 2 in the inner pattern region 22 from the light-absorbing film 2 in the peripheral contact region 21, so that the peripheral charges cannot be conducted to the inside. This chromium-free film strip is called an antistatic ring (ESD ring)6, as shown in fig. 2. At present, an anti-static ring (ESD ring) of a mask in the industry is located on the inner side or the outer side of a mask protective film frame (aluminum alloy frame) 4 and is separately arranged.
As shown in fig. 3 and 4, before light emitted from a light source irradiates a mask plate, a mask plate baffle (mask) 81 blocks an area where a pattern is not required to be transferred around the mask plate onto a wafer 84, and light in the area to be exposed passes through the mask plate and then is projected onto the surface of the wafer 84 through a lens 82, the mask plate and a lens 83. The electrostatic prevention ring (ESD ring)6 as a mask peripheral pattern cannot be exposed.
However, after the lens 82 of the lithography machine is used for a period of time, some crystals are gradually condensed on the surface of the lens 82, and the lens 82 is atomized. The light is irradiated onto the surface of the lens 82 with the fog, and the reflected light is reflected by the lower surface of the mask plate 81 to the lens 82 and penetrates through an anti-static ring (ESD ring)6 to be projected onto the surface of the wafer 84, so that the light received by the irradiated area is more than that received by a normal area, and the pattern on the surface of the wafer 84 is exposed for a second time, as shown in fig. 5. The experimental result shows that the line width of the area of the wafer 84 subjected to secondary projection by the anti-static ring (ESD ring)6 is about 3nm larger than that of the normal area, and the uniformity of the graph is affected.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to provide a mask plate, can eliminate the line width influence that the projection of antistatic ring corresponds the figure district to the wafer completely when step-by-step scanning formula lithography machine adopts this mask plate projection.
In order to solve the above technical problem, the present invention provides a mask plate, which comprises a transparent substrate 1, a light absorbing film 2 and a mask protection film 3;
the middle area of the lower side surface of the light-transmitting substrate 1 is a pattern area 22, and the peripheral area is a contact area 21;
the pattern area 22 and the contact area 21 are respectively covered with the light absorption films 2 with corresponding shapes;
the light absorption film 2 between the pattern region 22 and the contact region 21 is disconnected and forms an anti-static ring 6;
the mask protection film 3 is a transparent film and is attached to the lower side of a mask plate protection film frame 4;
the mask plate protective film frame 4 is light-proof;
the shape of the upper end of the mask plate protective film frame 4 is consistent with that of the anti-static ring 6;
the wall thickness of the upper end of the mask plate protective film frame 4 is greater than or equal to the line width of the anti-static ring 6;
the upper end of the mask plate protective film frame 4 is adhered to the lower side surface of the transparent substrate 1 corresponding to the anti-static ring 6 to shield the anti-static ring 6.
Preferably, the transparent substrate 1 is a quartz glass plate.
Preferably, the light absorption film 2 is a chromium film or a molybdenum silicide film.
Preferably, the mask plate protective film frame 4 is an aluminum alloy frame.
Preferably, the mask protection film 3 has a light transmittance of more than 90%.
Preferably, the thickness of the wall of the upper end of the mask plate protective film frame 4 is 1 to 1.2 times of the line width of the anti-static ring.
The utility model discloses a mask plate, with the opacity of mask plate protective film frame 4, set up antistatic ring (ESD ring)6 and correspond the region at mask plate protective film frame 4, block the scattered light through mask plate protective film frame 4 and pierce through and project to wafer 84 from antistatic ring (ESD ring) 6. Test results show that the stepping-scanning type photoetching machine can completely eliminate the influence of the projection of the anti-static electricity ring (ESD ring)6 on the line width of the corresponding pattern area of the wafer 84 by adopting the mask plate projection mode.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings required for the present invention are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a longitudinal sectional view of a common mask plate;
FIG. 2 is a transverse cross-sectional view of a common mask plate;
FIG. 3 is a schematic diagram of a reticle barrier bar covering the peripheral area of the reticle;
FIG. 4 is a schematic view of a step-and-scan lithography machine in a projection mode;
FIG. 5 is a schematic view of a projection mode of a step-and-scan lithography machine using a conventional mask plate to project an anti-static ring on a wafer due to light leakage;
fig. 6 is a schematic view of an embodiment of a mask plate according to the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are only some embodiments, but not all embodiments, of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.
Example one
As shown in fig. 6, the mask plate includes a light-transmitting substrate 1, a light-absorbing film 2, and a mask protection film 3;
the middle area of the lower side surface of the light-transmitting substrate 1 is a pattern area 22, and the peripheral area is a contact area 21;
the pattern area 22 and the contact area 21 are respectively covered with the light absorption films 2 with corresponding shapes;
the light absorption film 2 between the pattern region 22 and the contact region 21 is disconnected and forms an anti-static ring (ESD ring) 6;
the mask protection film 3 is a transparent film and is attached to the lower side of a mask plate protection film frame 4;
the mask plate protective film frame 4 is light-proof;
the shape of the upper end of the mask plate protective film frame 4 is consistent with that of the anti-static ring (ESD ring) 6;
the wall thickness of the upper end of the mask plate protective film frame 4 is greater than or equal to the line width of the anti-static ring;
the upper end of the mask plate protective film frame 4 is adhered to the lower side surface of the transparent substrate 1 corresponding to the anti-static ring 6 to shield the anti-static ring 6.
According to the mask plate of the first embodiment, the light absorption film 2 is used as a pattern carrier, light penetration can be blocked in an area of the mask plate with the light absorption film 2, light in an area without the light absorption film 2 can penetrate through and irradiate the surface of the wafer 84 to perform a photochemical reaction with photoresist on the surface, the purpose of transferring a pattern from the mask plate to the surface of the wafer 84 is achieved, and the mask plate protective film 3 is used for preventing dust from falling in a pattern area of the mask plate.
In the mask plate according to the first embodiment, the mask plate is used to protect the light-tight property of the film frame 4, the anti-static ring (ESD ring)6 is disposed in the region corresponding to the mask plate protective film frame 4, and the mask plate protective film frame 4 blocks scattered light from penetrating through the anti-static ring (ESD ring)6 and projecting onto the wafer 84. Test results show that the influence of the projection of the anti-static ring (ESD ring)6 on the line width of the corresponding pattern area of the wafer 84 can be completely eliminated when the stepping-scanning type photoetching machine adopts the mask plate for projection.
Example two
Based on the mask plate of the first embodiment, the transparent substrate 1 is a quartz glass plate, and the quartz glass plate 1 is used as a substrate and has very high light transmittance.
Preferably, the light absorption film 2 is a chromium (Cr) film or a molybdenum silicide (MoSi) film.
Preferably, the mask plate protective film frame 4 is an aluminum alloy frame.
Preferably, the mask protection film 3 has a light transmittance of more than 90%.
Preferably, the thickness of the wall of the upper end of the mask plate protective film frame 4 is 1 to 1.2 times of the line width of the anti-static ring.
The above description is only a preferred embodiment of the present invention, and should not be taken as limiting the invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A mask plate is characterized by comprising a light-transmitting substrate (1), a light-absorbing film (2) and a mask protective film (3);
the middle area of the lower side surface of the light-transmitting substrate (1) is a pattern area (22), and the peripheral area is a contact area (21);
the pattern area (22) and the contact area (21) are respectively covered with light absorption films (2) with corresponding shapes;
the light absorption film (2) between the pattern area (22) and the contact area (21) is disconnected and forms an anti-static ring (6);
the mask protection film (3) is a transparent film and is attached to the lower side of a mask plate protection film frame (4);
the mask plate protective film frame (4) is light-proof;
the shape of the upper end of the mask plate protective film frame (4) is consistent with that of the anti-static ring (6);
the wall thickness of the upper end of the mask plate protective film frame (4) is greater than or equal to the line width of the anti-static ring (6);
the upper end of the mask plate protective film frame (4) corresponds to the anti-static ring (6) and is pasted on the lower side surface of the light-transmitting substrate (1) to shield the anti-static ring (6).
2. The mask blank according to claim 1,
the light-transmitting substrate (1) is a quartz glass plate.
3. The mask blank according to claim 1,
the light absorption film (2) is a chromium film or a molybdenum silicide film.
4. The mask blank according to claim 1,
the mask plate protective film frame (4) is an aluminum alloy frame.
5. The mask blank according to claim 1,
the mask protection film (3) has a light transmittance of more than 90%.
6. The mask blank according to claim 1,
the wall thickness of the upper end of the mask plate protective film frame (4) is 1 to 1.2 times of the line width of the anti-static ring (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021857848.3U CN212965743U (en) | 2020-08-31 | 2020-08-31 | Mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202021857848.3U CN212965743U (en) | 2020-08-31 | 2020-08-31 | Mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN212965743U true CN212965743U (en) | 2021-04-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021857848.3U Active CN212965743U (en) | 2020-08-31 | 2020-08-31 | Mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN212965743U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113534603A (en) * | 2021-07-23 | 2021-10-22 | 常州兰利电器科技有限公司 | Mask protecting film and preparation method thereof |
-
2020
- 2020-08-31 CN CN202021857848.3U patent/CN212965743U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113534603A (en) * | 2021-07-23 | 2021-10-22 | 常州兰利电器科技有限公司 | Mask protecting film and preparation method thereof |
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