CN115032860A - Photomask and method for manufacturing semiconductor wafer - Google Patents
Photomask and method for manufacturing semiconductor wafer Download PDFInfo
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- CN115032860A CN115032860A CN202210646173.5A CN202210646173A CN115032860A CN 115032860 A CN115032860 A CN 115032860A CN 202210646173 A CN202210646173 A CN 202210646173A CN 115032860 A CN115032860 A CN 115032860A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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Abstract
The invention provides a photomask and a manufacturing method of a semiconductor wafer, wherein the photomask comprises: the photomask comprises a photomask substrate, a light-tight mask layer and a circuit pattern, wherein the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, and the surface of the photomask substrate, which is positioned in the pattern area, is provided with the light-tight mask layer; the light shielding layer is arranged on the surface of the photomask substrate, which is positioned in the electrostatic protection ring area, or the protective film frame is arranged on the photomask substrate, the protective film frame is light-proof, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area. By using the photomask of the invention, even if light is reflected inside the photoetching machine in the manufacturing process of a semiconductor wafer (such as a CMOS image sensor wafer), when reflected light passes through the static protection ring area, the reflected light is blocked (blocked) by the light blocking layer or the protective film frame covered by the static protection ring area, and the reflected light can not reach the wafer any more, thereby avoiding forming ghost.
Description
Technical Field
The invention belongs to the technical field of integrated circuit manufacturing, and particularly relates to a manufacturing method of a photomask semiconductor wafer.
Background
In the semiconductor manufacturing process, photolithography is a process of transferring a circuit structure in the form of a pattern on a mask (mask) to the surface of a wafer coated with a photoresist through steps of alignment, exposure, development and the like, the photolithography process forms a layer of photoresist masking pattern on the surface of the wafer, the subsequent process is etching or ion implantation, and dozens of photolithography steps are usually required in a standard CMOS process.
Masks typically use a transparent substrate as a base plate and opaque material formed on the base plate as a pattern to be transferred onto a photoresist, which must be made very precisely because any pinholes or divots formed in the pattern will become part of the photoresist pattern. In the photolithography process, the influence of ESD (electrostatic discharge) of the reticle on the product is particularly fatal. The ESD phenomenon of the mask is, for example, a phenomenon in which a high electric field is formed by charge accumulation, which causes pattern chipping or bridging on the mask. For example, a mask is formed by coating a metal chromium foil on a non-conductive glass material such as quartz by photolithography, and then patterning the metal chromium foil by electron beams. Static electricity may be accumulated in the mask due to the contact of the hands of the operator or the contact with the mask holder or the usual stacking position, and when the static electricity is accumulated to a certain degree, if there is no proper static electricity guiding path, the static electricity may be discharged through the wires in the mask pattern, thereby causing contamination particles, and even more seriously causing the bridging phenomenon of the chrome pattern.
In order to solve the problem of mask ESD, a light-transmitting electrostatic protection ring area is arranged on a mask corresponding to a semiconductor wafer (such as a CMOS image sensor) so as to prevent electrostatic damage of the mask; however, the transparent electrostatic protection ring region causes new problems in the CMOS image sensor manufacturing process, such as the formation of ghost images (e.g., unwanted lines) on the manufactured CMOS image sensor wafer.
Disclosure of Invention
The present invention provides a photomask and a method for manufacturing a semiconductor wafer, which can prevent light from forming ghost in the electrostatic protection ring area of the photomask.
The present invention provides a photomask, comprising:
a mask substrate, the mask substrate being light transmissive;
the reticle substrate includes a pattern region and an electrostatic protection ring region surrounding the pattern region,
an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and the opaque mask layer defines a circuit pattern;
and a light shielding layer is arranged on the surface of the photomask substrate in the static protection ring area.
Furthermore, the material of the light shielding layer comprises black glue.
Furthermore, the material of the opaque mask layer comprises at least one of Cr, Al, Ta, Ni, Co, W, MoSi, CrO and ZrSiO.
Furthermore, an anti-reflection layer is arranged on the surface of one side, away from the photomask substrate, of the light-tight mask layer.
Furthermore, the static protection ring area is close to the edge of the photomask substrate and is in a square ring shape.
The present invention also provides another mask, comprising:
a mask substrate;
the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, wherein an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and a circuit pattern is defined by the opaque mask layer;
the protective film frame is positioned on the photomask substrate, the protective film frame is light-tight, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area;
and the light shield protective film is fixed on the surface of one side, far away from the light shield substrate, of the protective film frame.
Further, the protective film frame is of an annular structure, and the material of the protective film frame comprises at least one of metal, metal alloy or ceramic material.
Furthermore, the protective film frame is arranged close to the edge of the photomask substrate and is annular.
Furthermore, the protective film frame and the photomask substrate are fixedly bonded through a first adhesive layer.
Further, the mask protection film includes at least one of a g-line transmission film, an i-line transmission film, a KrF transmission film, and an ArF transmission film.
The invention also provides a manufacturing method of the semiconductor wafer, which comprises the following steps:
loading a mask into a lithography system, wherein the mask comprises:
a mask substrate, the mask substrate being light transmissive;
the reticle substrate includes a pattern region and an electrostatic protection ring region surrounding the pattern region,
the surface of the photomask substrate, which is positioned in the pattern area, is provided with an opaque mask layer, and the opaque mask layer defines a circuit pattern;
a light shielding layer is arranged on the surface of the photomask substrate in the electrostatic protection ring area;
loading a semiconductor wafer into the lithography system, and
an exposure process is performed to transfer the circuit pattern to the semiconductor wafer using the mask.
The present invention also provides another method for manufacturing a semiconductor wafer, comprising:
loading a mask into a lithography system, wherein the mask comprises:
a mask substrate;
the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, wherein an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and a circuit pattern is defined by the opaque mask layer;
the protective film frame is positioned on the photomask substrate, the protective film frame is light-tight, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area;
the photomask protective film is fixed on the surface of one side, away from the photomask substrate, of the protective film frame;
loading a semiconductor wafer into the lithography system, and
an exposure process is performed to transfer the circuit pattern to the semiconductor wafer using the mask.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a photomask and a manufacturing method of a semiconductor wafer, wherein the photomask comprises: a photomask substrate, the photomask substrate being light transmissive; the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, wherein the surface of the photomask substrate, which is positioned in the pattern area, is provided with an opaque mask layer, and the opaque mask layer defines a circuit pattern; and a light shielding layer is arranged on the surface of the photomask substrate in the static protection ring area. By arranging the light shielding layer on the surface of the photomask substrate in the electrostatic protection ring area, even if light is reflected inside a photoetching machine in the manufacturing process of a semiconductor wafer (such as a CMOS image sensor), the light is blocked (blocked) by the light shielding layer covered by the electrostatic protection ring area when the reflected light passes through the electrostatic protection ring area, and the reflected light can not reach the wafer any more, thereby avoiding forming ghost.
The present invention also provides another photomask and a method for manufacturing a semiconductor wafer, the photomask comprising: a mask substrate; the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, and a light-tight mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area; the protective film frame is positioned on the photomask substrate, the protective film frame is light-proof, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area; and the light shield protective film is fixed on the surface of one side, far away from the light shield substrate, of the protective film frame. In the invention, the protective film frame is light-tight, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area; in this way, with the photomask of the present invention, even if light is reflected inside the lithography machine during the manufacturing process of a semiconductor wafer (such as a CMOS image sensor), the reflected light is blocked (blocked) by the protective film frame when passing through the electrostatic protection ring region, and the reflected light does not reach the wafer any more, thereby preventing the formation of ghost.
Drawings
FIG. 1 is a schematic diagram of a photolithography exposure system in which light passes through an electrostatic protection ring region.
FIG. 2 is a schematic illustration of the photolithography of FIG. 1 forming a ghost image on a semiconductor wafer product.
FIG. 3a is a top view of a mask substrate in a mask according to the present invention.
FIG. 3b is a schematic cross-sectional view along AA' of FIG. 3 a.
FIG. 4a is a top view of a mask including a light-shielding layer according to the present invention.
FIG. 4b is a schematic cross-sectional view along AA' of FIG. 4 a.
FIG. 5 is a cross-sectional view of another mask of the present invention.
FIG. 6 is a schematic view of a semiconductor wafer formed using two masks of the present invention without ghosting.
Wherein the reference numbers are as follows:
01-an anti-reflection plate; 02-a lens; 03-a photomask; 04-protective glasses; 05-wafer;
11-a mask substrate; 12-opaque mask layer; 13-a light-shielding layer; a T-pattern region; an R-electrostatic protection ring region; b-edge area; c-a closed space;
21-a mask substrate; 22-opaque mask layer; 24-a protective film frame; 25-protective film of photomask.
Detailed Description
As shown in the background art, a transparent electrostatic protection ring region is disposed on a mask corresponding to a semiconductor wafer (e.g., a CMOS image sensor wafer) to prevent electrostatic damage of the mask; however, it has been found that the transparent electrostatic protection ring region can cause ghost images (e.g., unwanted lines) on the finished CMOS image sensor wafer.
Specifically, as shown in fig. 1, in the photolithography system, light emitted from the light source is imaged on the wafer 05 through paths (a-b-c-d), and the light emitted from the light source is transmitted to the imaging area T of the mask 03 through the lens 02 and then imaged and focused on the wafer 05 through the protective lens 04.
In normal processing, only the imaging area T of the mask 03 can pass through the light, and the final image is focused on the wafer 05. In order to solve the ESD problem of the photomask, a transparent electrostatic protection ring region R is disposed on the photomask, and the position of the photomask where the electrostatic protection ring region R originally is located should not be passed by light, but after the transparent electrostatic protection ring region R is disposed, light emitted from the light source is finally imaged on the wafer 05 through the path (e-f-g-h). Light e emitted by the light source is reflected to the anti-reflection plate 01 (light f) through the lens 02, then reflected to the lens 02 (light g) through the anti-reflection plate 01, transmitted through the lens 02, passes through the electrostatic protection ring region R (light h) of the photomask 03, and is imaged and focused on the wafer 05 through the protective mirror 04, so that the annular pattern of the electrostatic protection ring region R appears on the wafer to form a ghost image (for example, an undesirable line on the periphery in fig. 2).
In short, in the manufacturing process of the CMOS image sensor, due to the reflection of light inside the lithography machine, the electrostatic protection ring region R on the mask, which should not be imaged, is imaged in the pixel region of the CMOS image sensor, thereby forming a so-called ghost.
Based on the above research, embodiments of the present invention provide a photomask and a method for manufacturing a semiconductor wafer. The invention is described in further detail below with reference to the figures and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted, however, that the drawings are designed in a simplified form and are not to scale, but rather are to be construed in an illustrative and descriptive sense only and not for purposes of limitation.
For ease of description, some embodiments of the present application may use spatially relative terms such as "above …," "below …," "top," "below," and the like, to describe the relationship of one element or component to another (or other) element or component as illustrated in the various figures of the embodiments. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or components described as "below" or "beneath" other elements or components would then be oriented "above" or "over" the other elements or components. The terms "first," "second," and the like in the following description are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances.
An embodiment of the present invention provides a mask, including:
a mask substrate, the mask substrate being light transmissive;
the reticle substrate includes a pattern region and an electrostatic protection ring region surrounding the pattern region,
an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and the opaque mask layer defines a circuit pattern;
and a light shielding layer is arranged on the surface of the photomask substrate in the static protection ring area.
A mask according to the present embodiment will be described with reference to fig. 3a to 4 b.
As shown in fig. 3a and 3b, the mask of the present embodiment includes: a mask substrate 11 made of a light-transmitting material; the mask substrate 11 may be, for example, a transparent substrate made of quartz glass or other materials. The reticle substrate 11 includes a pattern region T and an electrostatic protection ring region R surrounding the pattern region T, and an edge region B. The electrostatic protection ring region R can be understood as a blank region exposed from the mask substrate 11. Illustratively, the electrostatic protection ring region R is a square ring near the edge of the reticle substrate 11. The surface of the mask substrate 11 in the boundary region B may be provided with an opaque mask layer 12 or other patterns (e.g., alignment marks). An opaque mask layer 12 is disposed on the surface of the mask substrate 11 in the pattern region T, and the opaque mask layer 12 defines a circuit pattern. Taking a mask corresponding to a CMOS image sensor as an example, the opaque mask layer 12 defines a circuit pattern including: pixel array patterns, scribe lane patterns, etc. The material of the opaque mask layer 12 includes at least one of Cr, Al, Ta, Ni, Co, W, MoSi (molybdenum silicide), CrO (chromium oxide), ZrSiO (zirconium silicate), and the material of the opaque mask layer 12 is a chromium (Cr) metal layer. An anti-reflection layer (not shown) may be further disposed on a surface of the opaque mask layer 12 away from the mask substrate 11.
As shown in fig. 4a and 4b, a light-shielding layer 13 is disposed on the surface of the mask substrate 11 in the electrostatic protection ring region R. The material of the light shielding layer 13 includes black glue, which is a black glue having no photosensitive property and commonly used in the semiconductor process, such as epoxy resin glue.
The present invention also provides a method for manufacturing a semiconductor wafer, including:
loading a mask into a lithography system, wherein the mask comprises:
a photomask substrate, the photomask substrate being light transmissive;
the reticle substrate includes a pattern region and an electrostatic protection ring region surrounding the pattern region,
an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and the opaque mask layer defines a circuit pattern;
a light shielding layer is arranged on the surface of the photomask substrate in the static protection ring area;
loading a semiconductor wafer into the lithography system, and
an exposure process is performed to transfer the circuit pattern to the semiconductor wafer using the mask.
In the present embodiment, a light shielding layer is disposed on a surface of a mask substrate in the electrostatic protection ring region, so that, in a semiconductor wafer (e.g., a CMOS image sensor) manufacturing process, even if light is reflected inside a photo-etching machine, the reflected light is blocked (blocked) by the light shielding layer covered by the electrostatic protection ring region when the reflected light passes through the electrostatic protection ring region, and the reflected light does not reach the wafer any more, thereby preventing ghost from being formed.
An embodiment of the present invention provides another mask, including:
a mask substrate;
the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, wherein an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and a circuit pattern is defined by the opaque mask layer;
the protective film frame is positioned on the photomask substrate, the protective film frame is light-proof, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area;
and the light shield protective film is fixed on the surface of one side, far away from the light shield substrate, of the protective film frame.
Specifically, as shown in fig. 5, another mask of the present embodiment includes: a mask substrate 21, a protective film frame 24, and a mask protective film 25. The mask substrate 21 is made of transparent material; the mask substrate 21 may be, for example, a transparent substrate made of quartz glass or other materials. The reticle substrate 21 includes a pattern region T and an electrostatic protection ring region R surrounding the pattern region T, and a boundary region B. The surface of the mask substrate 21 in the border area B may be provided with an opaque mask layer 12 or other patterns (e.g., alignment marks). The electrostatic protection ring region R can be understood as the uncovered empty region of the mask substrate. A pattern region T for defining a circuit pattern to be transferred to a wafer by a photolithography process. Taking a mask corresponding to the CMOS image sensor as an example, the opaque mask layer 22 in the pattern region T defines a circuit pattern including: pixel array patterns, scribe lane patterns, etc.
A light-tight mask layer 22 is arranged on the surface of the photomask substrate 21 in the pattern area T, and the light-tight mask layer 22 defines a circuit pattern; the material of the opaque mask layer 22 includes at least one of Cr, Al, Ta, Ni, Co, W, MoSi (molybdenum silicide), CrO (chromium oxide), ZrSiO (zirconium silicate), and the material of the opaque mask layer 22 is a chromium (Cr) metal layer.
The protective film frame 24 is located on the mask substrate 21, the protective film frame 24 is opaque, and a projection of the protective film frame 24 on the mask substrate 21 covers the electrostatic protection ring region R.
The mask protection film 25 is attached to a surface of the protection film frame 24 on a side away from the mask substrate 21, and the mask protection film 25, the protection film frame 24 and the mask substrate 21 enclose a closed space C. The pattern area T on the mask substrate 21 is enclosed in the closed space C, and thus can be protected from contamination during the photolithography patterning process, mask transportation, and mask operation. The protective film frame 24 is provided with a first surface and a second surface opposed to each other in a direction perpendicular to the mask substrate 21. The first surface of the protective film frame 24 can be adhered to the mask substrate 21 by a first adhesive layer (not shown), and particularly can be adhered to the opaque mask layer 22 located at the edge of the mask substrate 21; and the projection of the protective film frame 24 on the mask substrate 21 covers the electrostatic protection ring region R; the mask protection film 25 is fixed to the second surface of the protection film frame 24 by adhesion (attachment) with a second adhesive material layer (not shown).
The mask protection film 25 is, for example, a transparent material layer, and the mask protection film 25 is transparent to a radiation beam used in a photolithography patterning process and has a heat conductive surface. The mask protection film 25 is circumferentially fixed on the protection film frame 24, and the mask protection film 25 covers and protects the opaque mask layer 22 on the pattern region T of the mask substrate 21. In the present embodiment, the mask substrate 21, the protective film frame 24, and the mask protective film 25 are fixed as a whole on the mask stage at the time of the photolithography patterning process.
The protective film frame 24 may be a ring-shaped structure, such as a circular ring or a square ring. The material of the protective film frame 24 includes at least one of metal, metal alloy, or ceramic material. More specifically, the metal or metal alloy material may include, but is not limited to, Ti 6 Al 4 V, TiSi, Fe-Ni-Co, or combinations of the foregoing. The metal or metal alloy may be doped with Cu, W, Mo, Cr or a combination of the foregoing. The protective film frame 24 may be made of a material having high mechanical strength, light weight, porosity and/or thermal conductivity. The pellicle frame 24 may be formed of a low thermal expansion material, and since the mask system may be used in lithography processes at room temperature to 150 ℃, the mask blank 21, the pellicle frame 24 and the mask pellicle 25 have similar thermal expansion coefficients, which helps to alleviate problems caused by the different expansion of the materials with temperature.
The mask protection film 25 is a mask functional film for preventing particles from falling onto the opaque mask layer 22. Specifically, the mask protection film 25 may be divided into a g-line transmission film, an i-line transmission film, a KrF transmission film, and an ArF transmission film according to the exposure light source, for example, when the exposure light source is g-line, the mask protection film 25 is a g-line transmission film, and when the exposure light source is i-line, the mask protection film 25 is an i-line transmission film.
The first surface of the protective film frame 24 can be adhered to the mask substrate 21 by a first adhesive layer (not shown), and particularly can be adhered to the opaque mask layer 22 located at the edge of the mask substrate 21. The first adhesive layer includes, but is not limited to, an epoxy resin, a thermoplastic elastomer rubber, an acrylic polymer or copolymer, or a combination of the foregoing. The first adhesive layer may comprise a gel-like material. In various embodiments, the first adhesive layer may have a crystalline and/or amorphous structure. The glass transition temperature (Tg) of the first adhesive layer is in the range of 100 ℃ to 180 ℃. The first adhesion layer has a Tg higher than the maximum operating temperature of the reticle. When the protective film frame 24 and the mask protective film 25 need to be detached from the mask blank 21, the first adhesive layer can be converted from a glass state to a rubber state by heating to a temperature exceeding the glass transition temperature Tg of the first adhesive layer, and the first adhesive layer can have better fluidity in the rubber state, so that the protective film frame 24 and the mask blank 21 can be detached. The mask protection film 25 is replaced after being used for a predetermined time or number of times.
The present invention also provides another method for manufacturing a semiconductor wafer, including:
loading a mask into a lithography system, wherein the mask comprises:
a mask substrate;
the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, wherein an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and a circuit pattern is defined by the opaque mask layer;
the protective film frame is positioned on the photomask substrate, the protective film frame is light-tight, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area;
the photomask protective film is fixed on the surface of one side of the protective film frame, which is far away from the photomask substrate;
loading a semiconductor wafer into the lithography system, and
an exposure process is performed to transfer the circuit pattern to the semiconductor wafer using the mask.
In another method for manufacturing a photomask and a semiconductor wafer according to this embodiment, the protective film frame is opaque and a projection of the protective film frame on the photomask substrate covers the electrostatic protection ring region; in this way, with the mask of the present invention, even if light is reflected inside the photo-etching machine during the manufacturing process of a semiconductor wafer (such as a CMOS image sensor), the reflected light will be blocked (blocked) by the protective film frame when passing through the electrostatic protection ring region, and the reflected light will not reach the wafer any more, thereby preventing the formation of ghost.
FIG. 6 is a schematic view of a semiconductor wafer formed using two masks of the present invention without ghosting. Both masks can prevent the light transmission of the electrostatic protection ring region from forming ghost images on a semiconductor wafer (such as a CMOS image sensor) while the electrostatic protection ring region is reserved.
In summary, the present embodiment provides a mask and a method for manufacturing a semiconductor wafer, the mask comprising: the photomask comprises a photomask substrate, a light-tight mask layer and a circuit pattern, wherein the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, the surface of the photomask substrate, which is positioned in the pattern area, is provided with the light-tight mask layer, and the light-tight mask layer defines the circuit pattern; and a light shielding layer is arranged on the surface of the photomask substrate in the static protection ring area. By arranging the light shielding layer on the surface of the photomask substrate in the electrostatic protection ring area, even if light is reflected inside a photoetching machine in the manufacturing process of a semiconductor wafer (such as a CMOS image sensor), the light is blocked (blocked) by the light shielding layer covered by the electrostatic protection ring area when the reflected light passes through the electrostatic protection ring area, and the reflected light can not reach the wafer any more, so that ghost is avoided.
The present invention also provides another photomask and a method for manufacturing a semiconductor wafer, the photomask comprising: a mask substrate; the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, and a light-tight mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area; the protective film frame is positioned on the photomask substrate, the protective film frame is light-proof, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area; the photomask protective film is fixed on the surface of one side, far away from the photomask substrate, of the protective film frame, and a closed space is defined by the photomask protective film, the protective film frame and the photomask substrate. In the invention, the protective film frame is light-tight, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area; therefore, in the manufacturing process of a semiconductor wafer (such as a CMOS image sensor), even if light is reflected inside a photoetching machine, when the reflected light passes through the static protection ring area, the reflected light is blocked (blocked) by the protection film frame, and the reflected light can not reach the wafer any more, thereby avoiding forming ghost.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. For the method disclosed in the embodiment, the description is relatively simple because the method corresponds to the device disclosed in the embodiment, and the relevant points can be referred to the description of the method part.
The above description is only for the purpose of describing the preferred embodiments of the present invention and is not intended to limit the scope of the claims of the present invention, and any person skilled in the art can make possible the variations and modifications of the technical solutions of the present invention using the methods and technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention belong to the protection scope of the technical solutions of the present invention.
Claims (12)
1. A photomask, comprising:
a mask substrate, the mask substrate being light transmissive;
the reticle substrate includes a pattern region and an electrostatic protection ring region surrounding the pattern region,
an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and the opaque mask layer defines a circuit pattern;
and a light shielding layer is arranged on the surface of the photomask substrate in the static protection ring area.
2. The mask of claim 1, wherein the material of the light-shielding layer comprises black glue.
3. The mask of claim 1, wherein the opaque mask layer comprises at least one of Cr, Al, Ta, Ni, Co, W, MoSi, CrO, ZrSiO.
4. The mask of claim 1, wherein an anti-reflective layer is disposed on a surface of the opaque mask layer away from the mask substrate.
5. The reticle of claim 1, wherein the electrostatic protection ring region is a square ring proximate an edge of the reticle substrate.
6. A photomask, comprising:
a mask substrate;
the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, wherein an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and a circuit pattern is defined by the opaque mask layer;
the protective film frame is positioned on the photomask substrate, the protective film frame is light-proof, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area;
and the light shield protective film is fixed on the surface of one side, far away from the light shield substrate, of the protective film frame.
7. The mask of claim 6, wherein the protection film frame is a ring structure, and the material of the protection film frame comprises at least one of metal, metal alloy or ceramic material.
8. The mask of claim 6, wherein the protective film frame is disposed adjacent to an edge of the mask substrate, the protective film frame having a ring shape.
9. The mask according to claim 6, wherein the protective film frame and the mask substrate are adhesively fixed by a first adhesive layer.
10. The photomask of claim 6, wherein the photomask protective film comprises at least one of a g-line transparent film, an i-line transparent film, a KrF transparent film and an ArF transparent film.
11. A method of manufacturing a semiconductor wafer, comprising:
loading a reticle of any one of claims 1-5 into a lithography system, wherein the reticle comprises:
a photomask substrate, the photomask substrate being light transmissive;
the reticle substrate includes a pattern region and an electrostatic protection ring region surrounding the pattern region,
an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and the opaque mask layer defines a circuit pattern;
a light shielding layer is arranged on the surface of the photomask substrate in the static protection ring area;
loading a semiconductor wafer into the lithography system, and
an exposure process is performed to transfer the circuit pattern to the semiconductor wafer using the mask.
12. A method of manufacturing a semiconductor wafer, comprising:
loading a reticle of any one of claims 6-10 into a lithography system, wherein the reticle comprises:
a mask substrate;
the photomask substrate comprises a pattern area and a static protection ring area surrounding the pattern area, wherein an opaque mask layer is arranged on the surface of the photomask substrate, which is positioned in the pattern area, and a circuit pattern is defined by the opaque mask layer;
the protective film frame is positioned on the photomask substrate, the protective film frame is light-tight, and the projection of the protective film frame on the photomask substrate covers the electrostatic protection ring area;
the photomask protective film is fixed on the surface of one side, away from the photomask substrate, of the protective film frame;
loading a semiconductor wafer into the lithography system, and
an exposure process is performed to transfer the circuit pattern to the semiconductor wafer using the mask.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210646173.5A CN115032860A (en) | 2022-06-08 | 2022-06-08 | Photomask and method for manufacturing semiconductor wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210646173.5A CN115032860A (en) | 2022-06-08 | 2022-06-08 | Photomask and method for manufacturing semiconductor wafer |
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| Publication Number | Publication Date |
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| CN115032860A true CN115032860A (en) | 2022-09-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210646173.5A Pending CN115032860A (en) | 2022-06-08 | 2022-06-08 | Photomask and method for manufacturing semiconductor wafer |
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| Country | Link |
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| CN (1) | CN115032860A (en) |
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