CN112631066A - Photomask protection structure, photomask substrate packaging method and photoetching method - Google Patents
Photomask protection structure, photomask substrate packaging method and photoetching method Download PDFInfo
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- CN112631066A CN112631066A CN202110032583.6A CN202110032583A CN112631066A CN 112631066 A CN112631066 A CN 112631066A CN 202110032583 A CN202110032583 A CN 202110032583A CN 112631066 A CN112631066 A CN 112631066A
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- protective film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
Abstract
The invention provides a photomask protection structure, a packaging method of a photomask substrate and a photoetching method, wherein one end of a photomask protection film frame is fixedly connected to the photomask substrate, the other end of the photomask protection film frame is connected with a first protection film and a second protection film, the second protection film is positioned on one side of the first protection film, which is far away from the photomask substrate, and the first protection film is a photomask functional film; the mask pattern on the photomask substrate is covered by the orthographic projection of the first protective film on the photomask substrate, the first protective film is covered by the orthographic projection of the second protective film on the photomask substrate, and the distance between the first protective film and the second protective film in the direction perpendicular to the photomask substrate is larger than or equal to a preset value. The second protective film is covered on the photomask functional film, the second protective film protects the photomask functional film, particles are prevented from falling onto the photomask functional film, and due to the fact that a certain interval is formed between the photomask functional film and the second protective film, the photomask functional film cannot be damaged when the second protective film is removed, the photomask functional film is guaranteed to be capable of effectively protecting mask patterns, and process quality is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a photomask protection structure, a packaging method of a photomask substrate and a photoetching method.
Background
The photomask (reticle) is a pattern master used in the photolithography process in the chip manufacturing process, a mask (layout) pattern is formed on a transparent substrate by an opaque light-shielding film, and the pattern is transferred to a product substrate by exposure, the quality of the photomask directly affects the quality of the chip, and a photomask functional film (pellicle) is usually formed on the photomask to protect the cleanness of the photomask and prevent particles from falling into the mask pattern.
However, during transportation of reticle packages, particles in the reticle box may fall onto the reticle functional film, or when the reticle is inspected (inspection) after receiving the reticle, the particles may fall onto the reticle functional film, for example: when the mask box is opened, outside particles fall down due to disturbance of the air flow, and the like. When the particles on the mask functional film are large, they cannot be detected by an Integrated Reticle Inspection System (IRIS), or they may be imaged on the wafer end, which affects the wafer quality.
Therefore, a protection structure is needed to prevent particles from falling onto the mask functional film.
Disclosure of Invention
In view of the above, the present invention provides a mask protection structure, a method for packaging a mask substrate, and a photolithography method, so as to prevent particles from falling onto a mask functional film.
In order to achieve the purpose, the invention has the following technical scheme:
a reticle protection structure comprising:
the first protective film, the second protective film and the photomask protective film frame;
one end of the photomask protecting film frame is fixedly connected to a photomask substrate, and the other end of the photomask protecting film frame is connected with the first protecting film and the second protecting film; the first protective film is a photomask functional film;
the orthographic projection of the first protective film on the photomask substrate covers the mask pattern on the photomask substrate, the orthographic projection of the second protective film on the photomask substrate covers the first protective film, and the distance between the first protective film and the second protective film in the direction perpendicular to the photomask substrate is larger than or equal to a preset value.
Optionally, the mask protection frame is provided with a first surface and a second surface, the first protection film is fixed on the mask protection frame on the first surface, and the second protection film is fixed on the mask protection frame on the second surface. Optionally, the first surface and the second surface form a step, and the second surface is a surface of the photomask film frame on a side away from the photomask substrate.
Optionally, the second protective film is an electrostatic adsorption film.
Optionally, the functional mask film includes at least one of a g-line transparent film, an i-line transparent film, a KrF transparent film, and an ArF transparent film.
Optionally, the pellicle frame includes an outer wall surface and an inner wall surface, the inner wall surface includes a first inner wall surface connected between the first surface and the second surface, and the pellicle frame is further provided with a through hole, and the through hole penetrates through the outer wall surface and the first inner wall surface.
Optionally, the first inner avoidance is at an obtuse angle with the first surface.
A method for packaging a photomask substrate comprises the following steps:
forming a mask film frame around the mask pattern on the mask substrate;
connecting a first protective film and a second protective film at one end of the photomask protective film frame, which is far away from the photomask substrate, wherein the second protective film is positioned at one side of the first protective film, which is far away from the photomask substrate; the first protective film is a photomask functional film;
the first protective film covers the mask pattern in an orthographic projection of the photomask substrate, the second protective film covers the first protective film in an orthographic projection of the photomask substrate, and the distance between the first protective film and the second protective film in the direction perpendicular to the photomask substrate is larger than or equal to a preset value.
Optionally, the second protective film is an electrostatic adsorption film.
Optionally, the connecting the first protection film and the second protection film at the end of the mask protection frame away from the mask substrate includes:
adhering a first protective film parallel to the mask substrate on the mask protective frame;
and adsorbing a second protective film parallel to the photomask substrate on the photomask protective film frame by utilizing electrostatic adsorption.
A photoetching method is characterized in that a target pattern is formed on a wafer by utilizing a photomask, the photomask comprises a photomask substrate and a mask pattern on the photomask substrate, the photomask protection structure is fixed on the photomask, and a second protective film in the photomask protection structure is removed before the target pattern is formed on the wafer by utilizing the photomask.
The embodiment of the invention provides a light shield protection structure, which comprises: the photomask comprises a first protective film, a second protective film and a photomask protective film frame, wherein one end of the photomask protective film frame is fixedly connected to a photomask substrate, the other end of the photomask protective film frame is connected with the first protective film and the second protective film, the second protective film is positioned on one side, away from the photomask substrate, of the first protective film, and the first protective film is a photomask functional film; the mask pattern on the photomask substrate is covered by the orthographic projection of the first protective film on the photomask substrate, the first protective film is covered by the orthographic projection of the second protective film on the photomask substrate, and the distance between the first protective film and the second protective film in the direction perpendicular to the photomask substrate is larger than or equal to a preset value. Like this, it has the second protection film to cover on the light shield functional film, and the second protection film protects the light shield functional film, avoids the granule to drop to the light shield functional film on to because have certain interval between light shield functional film and the second protection film, can not cause the damage to the light shield functional film when getting rid of the second protection film, guarantee that the light shield functional film can effectively protect the mask figure on the light shield base plate, improve process quality.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 depicts a schematic of a lithographic structure;
FIG. 2 is a schematic cross-sectional view of a mask protection structure according to an embodiment of the invention;
FIG. 3 is a schematic cross-sectional view of a mask frame according to an embodiment of the present invention;
FIG. 4 is a schematic side view of a mask frame according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background, when particles on the mask functional film are large, the particles cannot be detected by an Integrated Reticle Inspection System (IRIS), or the particles may be imaged on a wafer side, referring to fig. 1, a mask pattern 102 is formed on a mask substrate 101, a mask frame 103 is formed on the periphery of the mask substrate 101, the mask frame 103 surrounds the mask pattern 102, so that the mask pattern 102 can be protected, a mask functional film 104 is formed on the mask frame 103, and the mask functional film 104 prevents the particles from falling onto the mask pattern 102. When the photolithography process is performed, light is incident into the photomask blank 101 from the side of the photomask blank 101 where the mask pattern 102 is not formed, the position of the photomask blank 101 where the mask pattern 102 is formed has a shielding effect on the light, the position of the photomask blank 101 where the mask pattern 102 is not formed has a light transmitting effect on the light, and when the particles 105 are formed on the photomask functional film 104, the particles 105 are imaged on the photoresist layer 109 on the wafer 108 through the action of the optical system 106, thereby affecting the quality of the wafer 108.
To this end, an embodiment of the present invention provides a mask protection structure, as shown in fig. 2, including:
a first protective film 204, a second protective film 205, and a mask protective film frame 202;
the mask protection film frame 202 has one end for being fixedly connected to a mask substrate 201, and the other end for being connected to the first protection film 204 and the second protection film 205, wherein the second protection film 205 is located on a side of the first protection film 204 away from the mask substrate 201; the first protection film 204 is a mask functional film;
the orthographic projection of the first protective film 204 on the photomask substrate 201 covers the mask pattern 203 on the photomask substrate 201, the orthographic projection of the second protective film 205 on the photomask substrate 201 covers the first protective film 204, and the distance between the first protective film 204 and the second protective film 205 in the direction perpendicular to the photomask substrate 201 is larger than or equal to a preset value.
In the embodiment of the present invention, the mask substrate 201 and the mask pattern 203 on the mask substrate 201 form a mask (reticle), which is also called a mask. The method for forming the photomask may be to form the opaque layer on the photomask substrate 201, for example, a photoresist layer may be formed on the opaque layer through a chemical vapor deposition, a physical vapor deposition, or the like, and then the photoresist layer is sequentially subjected to an exposure process and a development process. Specifically, the photoresist layer is directly irradiated with an electron beam or laser, the irradiated photoresist layer reacts, and then the photoresist layer that is not irradiated with light or the photoresist layer that is irradiated with light is removed with a specific solvent, so that the mask pattern is transferred to the photoresist layer, that is, the patterned photoresist layer is obtained. And then, etching the non-light-pervious layer by taking the patterned photoresist layer as a shield to form the photomask. Subsequently, the photoresist layer may be removed. The mask substrate 201 may be, for example, a transparent substrate made of quartz glass or other materials, and the mask pattern 203 may be, for example, molybdenum silicide (MoSi), chromium oxide (CrO), zirconium silicate (ZrSiO), silicon nitride (SiN), or the like.
The mask blank 201 is formed with a mask frame 202, that is, one end of the mask frame 202 is fixedly connected to the mask blank 201 and surrounds the mask pattern 203 on the mask blank 201, thereby protecting the mask pattern 203. Specifically, the mask frame 202 may be adhered to the outer side of the outermost mask pattern by an adhesive, and the mask frame 202 may have a ring structure, such as a circular ring or a square ring. The material of the mask frame 202 may be aluminum alloy, ceramic, or the like.
A first protective film 204 is formed above the mask pattern 203 and parallel to the mask substrate 201, wherein an orthographic projection of the first protective film 201 on the mask substrate 201 covers the mask pattern 203 on the mask substrate 201, and the first protective film 204 is a mask functional film for preventing particles from falling onto the mask pattern 203. The functional film of the mask includes at least one of a g-line transmission film, an i-line transmission film, a KrF transmission film, and an ArF transmission film. Specifically, the mask functional film may be classified into a g-line transmissive film, an i-line transmissive film, a KrF transmissive film, and an ArF transmissive film according to the exposure light source, for example, when the exposure light source is g-line, the mask functional film is a g-line transmissive film, and when the exposure light source is i-line, the mask functional film is an i-line transmissive film.
The first protective film 204 is disposed on the mask frame 202, and the first protective film 204 is fixed above the mask pattern 203 by the mask frame 202. Obviously, the first protection film 204 and the mask pattern 203 have a certain distance therebetween, so as to avoid damage to the mask pattern 203 during the process of removing the first protection film 204. Specifically, the first protective film 204 may be attached to the mask frame 202 by an adhesive. A second protection film 205 is formed above the first protection film 204 and parallel to the mask substrate 201, wherein an orthographic projection of the second protection film 205 on the mask substrate 201 covers the first protection film 204, and the second protection film 205 is used for preventing particles from falling onto the first protection film 204 and affecting wafer imaging. The second protection film 205 is fixed by the mask protection film frame 202, and the distance between the second protection film 205 and the first protection film 204 in the direction perpendicular to the mask substrate 201 is greater than or equal to a preset value, so that the first protection film 204 is prevented from being damaged in the process of removing the second protection film 205 due to the space between the first protection film 204 and the second protection film 205. Before the photolithography process is performed, the second protective film 205 above the first protective film 204 needs to be removed.
In this embodiment, the pellicle frame 202 has a first surface and a second surface, the first protection film 204 is fixed on the pellicle frame 202 on the first surface, and the second protection film 205 is fixed on the pellicle frame 202 on the second surface. It is understood that the first surface is used for fixedly supporting the first protection film 204, the second surface is used for fixedly supporting the second protection film 205, and the second protection film 205 is located above the first protection film 204, i.e. the distance between the second protection film 205 and the mask substrate 201 is greater than the distance between the first protection film 205 and the mask substrate 201, so that the first surface is located on the inner wall of the mask protection film frame 202, and the second plane can be located on the inner wall or the top surface of the mask protection film frame 202. Moreover, since the first protection film 204 is located on the first surface, which is located on the inner wall of the mask protection frame 202, when the photolithography tool fails and the photomask needs to be taken out from the photolithography tool, the first protection film 204 is prevented from being contaminated or damaged due to the fact that the taking-out device touches the first protection film 204.
Specifically, two protrusion structures, namely a first protrusion and a second protrusion, may be disposed on the inner wall of the photo-mask pellicle frame 202, where a distance between the first protrusion and the photo-mask substrate 201 is smaller than a distance between the second protrusion and the photo-mask substrate 201, the first protrusion is used to support the first protection film 204, and the second protrusion is used to support the second protection film 205. A protrusion structure may be disposed on the inner wall of the mask frame 202, and the protrusion structure is used to support the first protection film 204, and the top surface of the mask frame 202 is used to support the second protection film 204, where the top surface refers to the surface of the mask frame 202 away from the mask substrate 201.
In a specific embodiment, the first surface and the second surface form a step, as shown in fig. 2, and the second surface is a surface of the mask frame 202 away from the mask substrate 201, the step structure can be formed by cutting the mask frame 202, and the process is relatively simple. The photo-mask frame 202 between the first surface and the second surface has a slope in a direction perpendicular to the photo-mask substrate 201, and the slope is inclined toward the inner side of the photo-mask frame 202 so as to bond the first protection film 204 on the first surface.
In a specific application, the second protective film 205 may be an electrostatic protective film, and the second protective film 205 for protecting the first protective film 204 is adsorbed on the mask protective film frame 202 by electrostatic adsorption, so that the process is simplified, and the second protective film 205 is easily removed in a subsequent photolithography process.
In this embodiment, the pellicle frame 202 includes an outer wall surface and an inner wall surface, the inner wall surface includes a first inner wall surface connecting the first surface and the second surface, a through hole 210 is further formed in the pellicle frame 202, the through hole 210 penetrates through the outer wall surface and the first inner wall surface, as shown in fig. 3 and 4, fig. 3 is a schematic cross-sectional view of the pellicle frame 202, and fig. 4 is a schematic side view of the pellicle frame. The through holes 210 on the mask protection frame 202 can reduce the air pressure between the first protection film 204 and the second protection film 205, so that the air pressure between the first protection film 204 and the second protection film 205 is balanced with the external air pressure, and the first protection film 204 is prevented from being damaged in the process of removing the second protection film 205. Referring to fig. 3 and 4, the number of the through holes 210 on the photo-mask frame 202 between the first protective film 204 and the second protective film 205 may be multiple, and the multiple through holes 210 may be arranged in an array. In a specific embodiment, the included angle between the first inner wall surface and the first surface is an obtuse angle, so as to fix the first protection film 204 on the first surface.
As described above in detail, the embodiment of the present application provides a mask protection structure, and a method for packaging a mask substrate, as shown in fig. 2, includes:
forming a mask frame 202 around the mask pattern 203 on the mask substrate 201;
connecting a first protective film 204 and a second protective film 205 at one end of the photomask protective film frame 202 away from the photomask substrate 201, wherein the second protective film 205 is positioned at one side of the first protective film 204 away from the photomask substrate 201; the first protection film 204 is a mask functional film;
the first protective film 204 covers the mask pattern 203 in the orthographic projection of the photo-mask substrate 201, the second protective film 205 covers the first protective film 204 in the orthographic projection of the photo-mask substrate 201, and the distance between the first protective film 204 and the second protective film 205 in the direction perpendicular to the photo-mask substrate 201 is greater than or equal to a preset value.
In the embodiment of the present application, the mask pattern 203 is formed on the mask substrate 201, the mask substrate 201 and the mask pattern 203 form a mask, the mask is a pattern master used in a photolithography process in a chip manufacturing process, and the mask pattern is transferred onto a product substrate by exposure. A mask frame 202 is formed around the mask pattern 203, and the mask frame 202 protects the mask pattern 203. One end of the photo-mask film frame 202, which is far away from the photo-mask substrate 201, is connected with a first protective film 204 and a second protective film 205, the second protective film 205 is located on one side of the first protective film 204, which is far away from the photo-mask substrate 201, the first protective film 204 is a photo-mask functional film for preventing particles from falling onto the photo-mask, the photo-mask film frame 202 is located at the periphery of the mask pattern 203, the orthographic projection of the first protective film 204 covers the mask pattern 203, the mask pattern 203 is surrounded by the photo-mask film frame 202 and the first protective film 204, the mask pattern 203 is isolated from the outside, and the orthographic projection of the second protective film 205 covers the first protective film 204 to prevent the particles from falling. Moreover, the distance between the first protective film 204 and the second protective film 205 in the direction perpendicular to the reticle substrate 201 is greater than or equal to a preset value, so as to prevent the first protective film 204 from being damaged when the second protective film 205 is removed, and the preset value may be determined according to requirements.
In this embodiment, the second protection film 205 is an electrostatic adhesion film, and specifically, the first protection film 204 parallel to the mask substrate 201 may be adhered on the mask protection frame 202, and then the second protection film 205 parallel to the mask substrate 201 may be adhered on the mask protection frame 202 by electrostatic adhesion. For example, the first protective film 204 is adhered to the first surface of the photo-mask frame 202 by an adhesive, and then the second protective film 205 is adhered to the second surface of the photo-mask frame 202, which is located at a distance from the photo-mask substrate 201 greater than the first surface of the photo-mask substrate 201, and the first surface is located on the inner wall of the photo-mask frame 202, and the second surface is located on the inner wall or the top surface of the photo-mask frame 202. In a specific application, a first charge may be implanted into the second protective film 205, and a second charge may be implanted into the second surface of the photo-mask frame 202, where the first charge and the second charge are opposite charges, and the second protective film 205 is adsorbed onto the second surface of the photo-mask frame 202 by an electrostatic attraction between the charges.
The embodiment of the application also provides a photoetching method, wherein a photomask is used for forming a target pattern on a wafer, the photomask comprises a photomask substrate and a mask pattern on the photomask substrate, the photomask protection structure is fixed on the photomask, and a second protective film in the photomask protection structure is removed before the photomask is used for forming the target pattern on the wafer.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, as for the method embodiment, since it is basically similar to the structure embodiment, it is relatively simple to describe, and the relevant points can be referred to the partial description of the structure embodiment.
The foregoing is only a preferred embodiment of the present invention, and although the present invention has been disclosed in the preferred embodiments, it is not intended to limit the present invention. Those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention, unless the contents of the technical solution of the present invention are departed.
Claims (11)
1. A mask protection structure, comprising:
the first protective film, the second protective film and the photomask protective film frame;
one end of the photomask protecting film frame is fixedly connected to a photomask substrate, the other end of the photomask protecting film frame is connected with the first protecting film and the second protecting film, and the second protecting film is positioned on one side, away from the photomask substrate, of the first protecting film; the first protective film is a photomask functional film;
the orthographic projection of the first protective film on the photomask substrate covers the mask pattern on the photomask substrate, the orthographic projection of the second protective film on the photomask substrate covers the first protective film, and the distance between the first protective film and the second protective film in the direction perpendicular to the photomask substrate is larger than or equal to a preset value.
2. The mask protection structure of claim 1, wherein the mask protection film frame has a first surface and a second surface, the first protection film is fixed on the mask protection film frame at the first surface, and the second protection film is fixed on the mask protection film frame at the second surface.
3. The reticle guard structure of claim 2 wherein the first surface and the second surface form a step, the second surface being a surface of the reticle mask frame on a side away from the reticle substrate.
4. The mask protection structure according to any of claims 1-3, wherein the second protection film is an electrostatic adsorption film.
5. The mask protection structure according to any one of claims 1 to 3, wherein the mask functional film comprises at least one of g-line transparent film, i-line transparent film, KrF transparent film, and ArF transparent film.
6. The mask protection structure according to any one of claims 1 to 3, wherein the mask frame comprises an outer wall surface and an inner wall surface, the inner wall surface comprises a first inner wall surface connected between the first surface and the second surface, and the mask frame is further provided with a through hole penetrating through the outer wall surface and the first inner wall surface.
7. The mask protection structure according to claim 6, wherein the angle between the first inner wall surface and the first surface is an obtuse angle.
8. A method for packaging a photomask substrate, comprising:
forming a mask film frame around the mask pattern on the mask substrate;
connecting a first protective film and a second protective film at one end of the photomask protective film frame, which is far away from the photomask substrate, wherein the second protective film is positioned at one side of the first protective film, which is far away from the photomask substrate; the first protective film is a photomask functional film;
the first protective film covers the mask pattern in an orthographic projection of the photomask substrate, the second protective film covers the first protective film in an orthographic projection of the photomask substrate, and the distance between the first protective film and the second protective film in the direction perpendicular to the photomask substrate is larger than or equal to a preset value.
9. The method according to claim 8, wherein the second protective film is an electrostatic adsorption film.
10. The method of claim 9, wherein attaching the first protective film and the second protective film at an end of the reticle mask frame away from the reticle substrate comprises:
adhering a first protective film parallel to the mask substrate on the mask protective frame;
and adsorbing a second protective film parallel to the photomask substrate on the photomask protective film frame by utilizing electrostatic adsorption.
11. A photolithography method, wherein a target pattern is formed on a wafer by using a photomask, the photomask comprises a photomask substrate and a mask pattern on the photomask substrate, the photomask is fixed with the photomask protection structure of any one of claims 1 to 7, characterized in that the second protective film in the photomask protection structure is removed before the target pattern is formed on the wafer by using the photomask.
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| CN202110032583.6A CN112631066A (en) | 2021-01-11 | 2021-01-11 | Photomask protection structure, photomask substrate packaging method and photoetching method |
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| CN202110032583.6A CN112631066A (en) | 2021-01-11 | 2021-01-11 | Photomask protection structure, photomask substrate packaging method and photoetching method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113900352A (en) * | 2021-09-06 | 2022-01-07 | 长江存储科技有限责任公司 | Mask structure, manufacturing method thereof and photoetching method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256352A (en) * | 2007-02-26 | 2008-09-03 | 中芯国际集成电路制造(上海)有限公司 | Protective film and bracket thereof |
| KR20160064923A (en) * | 2014-11-28 | 2016-06-08 | 삼성전자주식회사 | Pellicle and exposure mask comprising the same |
| CN108873600A (en) * | 2017-05-15 | 2018-11-23 | Imec 非营利协会 | A kind of photo mask board system |
| CN208937906U (en) * | 2018-09-30 | 2019-06-04 | 广州仕元光电股份有限公司 | A kind of dust-proof protective structure of mask plate |
-
2021
- 2021-01-11 CN CN202110032583.6A patent/CN112631066A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101256352A (en) * | 2007-02-26 | 2008-09-03 | 中芯国际集成电路制造(上海)有限公司 | Protective film and bracket thereof |
| KR20160064923A (en) * | 2014-11-28 | 2016-06-08 | 삼성전자주식회사 | Pellicle and exposure mask comprising the same |
| CN108873600A (en) * | 2017-05-15 | 2018-11-23 | Imec 非营利协会 | A kind of photo mask board system |
| CN208937906U (en) * | 2018-09-30 | 2019-06-04 | 广州仕元光电股份有限公司 | A kind of dust-proof protective structure of mask plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113900352A (en) * | 2021-09-06 | 2022-01-07 | 长江存储科技有限责任公司 | Mask structure, manufacturing method thereof and photoetching method |
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