JPH03238455A - Reticule - Google Patents
ReticuleInfo
- Publication number
- JPH03238455A JPH03238455A JP2035404A JP3540490A JPH03238455A JP H03238455 A JPH03238455 A JP H03238455A JP 2035404 A JP2035404 A JP 2035404A JP 3540490 A JP3540490 A JP 3540490A JP H03238455 A JPH03238455 A JP H03238455A
- Authority
- JP
- Japan
- Prior art keywords
- light shielding
- region
- pattern
- area
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000007547 defect Effects 0.000 abstract description 10
- 238000010894 electron beam technology Methods 0.000 abstract description 8
- 238000007689 inspection Methods 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract 3
- 238000011282 treatment Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路の製造に使用されるレチクルに
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reticle used in the manufacture of semiconductor integrated circuits.
半導体集積回路の微細化、高密度化に伴って、ウェハー
に回路パターンを焼き付ける露光機は、コンタクトアラ
イナ−、ミラープロジェクションアライナ−等からステ
ッパーへ変ってきた。ステッパーでは、ウェハー上のパ
ターンサイズの５〜１０倍のパターンサイズを有するレ
チクルか使用される。With the miniaturization and higher density of semiconductor integrated circuits, the exposure machines used to print circuit patterns on wafers have changed from contact aligners, mirror projection aligners, etc. to steppers. The stepper uses a reticle with a pattern size that is 5 to 10 times larger than the pattern size on the wafer.
このレチクルは、第３図に示すように、透明ガラス基板
上にクロム、酸化クロム等の金属膜で回路パターン領域
１．スクライブ線領域２及び斜線を施した遮光領域３を
形成したものである。レチクルの作成方法は、透明ガラ
ス基板上にクロム。As shown in FIG. 3, this reticle is made of a metal film such as chromium or chromium oxide on a transparent glass substrate in a circuit pattern area 1. A scribe line area 2 and a shaded area 3 with diagonal lines are formed. The reticle is created using chrome on a transparent glass substrate.
酸化クロム等の金属膜が形成されたマスク基板に放射線
感応レジストを形成した後、電子ビーム描画装置等によ
り所望部分を選択的に描画し、次いで現像、エツチング
、レジスト剥離等のプロセス処理を施すことにより完成
する。After forming a radiation-sensitive resist on a mask substrate on which a metal film such as chromium oxide is formed, desired portions are selectively drawn using an electron beam drawing device, etc., and then processes such as development, etching, and resist peeling are performed. Completed by
ここで電子ビームが照射された部分が後の現像処理によ
り除去される、いわゆるポジ型電子ビームレジストを用
いた場合、回路パターン領域及びスクライブ線領域を描
画するだけで遮光領域は、未照射のため、完成したレチ
クルはスクライブ線の外周にすべて遮光用金属膜が残っ
た状態になる。When using a so-called positive electron beam resist, in which the areas irradiated with the electron beam are removed by later development processing, only the circuit pattern area and scribe line area are drawn, and the shaded area is left unexposed. The completed reticle will have a light-shielding metal film remaining around the entire periphery of the scribe lines.
ところでこの遮光領域３は、レチクルをステッパーにセ
ットし、ステップアンドリピートした時に周辺に光がも
れるのを防止するためのものであるから、この領域は回
路パターン領域と同様に欠陥があってはならない。By the way, this light-shielding area 3 is to prevent light from leaking to the surrounding area when the reticle is set on a stepper and step-and-repeat is performed, so this area should not have defects like the circuit pattern area. No.
上述したようにレチクルにおいては、遮光領域について
もポジ型レジストを用いて作成した従来のレチクルには
、必要とされる遮光領域を示すパターンがない為、本来
、欠陥検査を行なわなければならないスクライブ線領域
の外周数關の範囲以外の余分な検査をしたり、あるいは
必要な領域を検査せずに欠陥を見逃すという不都合かあ
った。As mentioned above, conventional reticles that are made using positive resist for the light-shielding areas do not have a pattern that indicates the necessary light-shielding areas, so scribe lines that must be inspected for defects are essential. There were inconveniences such as redundant inspection outside the outer circumference of the area, or failure to inspect the necessary area and overlooking defects.
本発明のレチクルは、透明基板の一生面に形成された回
路パターン領域と、この回路パターン領域の周囲に設け
られたスクライブ線領域と、このスクライブ線領域の周
囲に設けられた遮光領域とから成るレチクルにおいて、
前記遮光領域内に最小限必要とされる遮光範囲を規定す
る為のパターンを形成したものである。The reticle of the present invention includes a circuit pattern area formed on the entire surface of a transparent substrate, a scribe line area provided around this circuit pattern area, and a light shielding area provided around this scribe line area. In the reticle,
A pattern is formed within the light-shielding area to define a minimum required light-shielding range.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例の上面図である。FIG. 1 is a top view of a first embodiment of the invention.
ポジ型電子線レジストが形成されたマスク基板に、電子
ビーム描画装置を用いてパターン描画する際に、回路パ
ターン領域１及びスクライブ線領域２に加えて、ステッ
パーで縮少投影露光したときに回路パターン領域１及び
スクライブ線領域２を含むパターン領域の外周からの光
のもれを防止する為の、最小限必要とされる３關〜８
＋ｕ＋幅の遮光領域３Ａの範囲を規定するパターン４を
１０〜２００μｍの幅で描画する０次いで通常のプロセ
ス処理を実施すると、第１図に示したレチクルが完成す
る。When drawing a pattern on a mask substrate on which a positive electron beam resist is formed using an electron beam drawing device, in addition to the circuit pattern area 1 and the scribe line area 2, the circuit pattern is Minimum required 3 to 8 angles to prevent light leakage from the outer periphery of the pattern area including area 1 and scribe line area 2.
A pattern 4 defining a +u+ width light-shielding region 3A is drawn with a width of 10 to 200 μm. Then, normal processing is carried out, and the reticle shown in FIG. 1 is completed.
このように構成されたレチクルは、遮光領域３の欠陥を
検査する際、遮光範囲規定パターン４の内側のみを検査
すればよいことになり、必要な遮光領域の範囲を短時間
で検査できる。With the reticle configured in this way, when inspecting the light-shielding region 3 for defects, it is only necessary to inspect the inside of the light-shielding area defining pattern 4, and the necessary range of the light-shielding region can be inspected in a short time.
第２図は本発明の第２の実施例の上面図である。FIG. 2 is a top view of a second embodiment of the invention.
本第２の実施例は、遮光範囲を規定するパター＞’４Ａ
を、最小限必要とされる遮光領域３Ａのコーナ一部の４
ケ所に形成したものである。遮光領域の欠陥検査を金属
顕微鏡による肉眼検査で行なわすに自動欠陥検査装置を
用いて行なう場合は本実施例のパターンでも欠陥検査は
可能である。In the second embodiment, the putter that defines the light-shielding range is >'4A.
4, a part of the corner of the minimum required light-shielding area 3A.
It was formed in several places. If the defect inspection of the light-shielded area is carried out by visual inspection using a metallurgical microscope or by using an automatic defect inspection apparatus, the pattern of this embodiment can also be used for defect inspection.
本第２の実施例では遮光範囲規定パターン４Ａの面積が
小さい為、電子ビーム描画装置による描画時間が少なく
てすむという利点がある。In the second embodiment, since the area of the light-shielding range defining pattern 4A is small, there is an advantage that the drawing time required by the electron beam drawing device is reduced.
以上説明したように本発明は、スクライブ線領域の周囲
に設けられた遮光領域内に、最小限必要とされる遮光範
囲を規定する為のパターンを形成することにより、遮光
領域の欠陥検査を効率よ〈実施できるという効果がある
。As explained above, the present invention efficiently inspects defects in the shaded area by forming a pattern to define the minimum required shaded area within the shaded area provided around the scribe line area. It has the effect of being able to be implemented.
第１図及び第２図は本発明の第１及び第２の実施例の上
面図、第３図は従来のレチクルの上面図である。
１・・・回路パターン領域、２・・・スクライブ線領域
、３・・・遮光領域、３Ａ・・・規定された遮光領域、
４．４Ａ・・・遮光範囲規定パターン。1 and 2 are top views of first and second embodiments of the present invention, and FIG. 3 is a top view of a conventional reticle. DESCRIPTION OF SYMBOLS 1... Circuit pattern area, 2... Scribe line area, 3... Light shielding area, 3A... Specified light shielding area,
4.4A...Shading range regulation pattern.
Claims (1)
の回路パターン領域の周囲に設けられたスクライブ線領
域と、このスクライブ線領域の周囲に設けられた遮光領
域とから成るレチクルにおいて、前記遮光領域内に最小
限必要とされる遮光範囲を規定する為のパターンを形成
したことを特徴とするレチクル。In a reticle consisting of a circuit pattern area formed on one main surface of a transparent substrate, a scribe line area provided around the circuit pattern area, and a light shielding area provided around the scribe line area, the light shielding A reticle characterized by forming a pattern to define the minimum required light-shielding range within the area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035404A JPH03238455A (en) | 1990-02-15 | 1990-02-15 | Reticule |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2035404A JPH03238455A (en) | 1990-02-15 | 1990-02-15 | Reticule |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03238455A true JPH03238455A (en) | 1991-10-24 |
Family
ID=12440966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2035404A Pending JPH03238455A (en) | 1990-02-15 | 1990-02-15 | Reticule |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03238455A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6477700B1 (en) | 1999-03-16 | 2002-11-05 | Nec Corporation | Reticle having discriminative pattern narrower in pitch than the minimum pattern width but wider than minimum width in the pattern recognition |
-
1990
- 1990-02-15 JP JP2035404A patent/JPH03238455A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6477700B1 (en) | 1999-03-16 | 2002-11-05 | Nec Corporation | Reticle having discriminative pattern narrower in pitch than the minimum pattern width but wider than minimum width in the pattern recognition |
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