^4106] 4 410 7 1 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 發明領域： 本發明揭露一種有關於光罩之防靜電設計，特别是有 關一種利用製作光罩時加曝類似避雷針之圖案以及時將可 能產生之靜電荷以弧光放電的方式導掉，以避免其累積， 而損及光罩上之囷案。 發明背景： 在半導體製程之中，不僅是屬；I之製程品管需要嚴密 監控，以防止任何損及良率之事件產生，元件之設計也朝 向缩小尺寸’以提高單位面積之聚集度，並提高元件功能； 更重要的疋提高產品的經濟價値。然而由於伴隨聚集度的 快速升高’内連線更密集，而使得設計规範（design rule)、 微影製程、蝕刻技術同步加高其難度。此外，不但MOSFET 閘極氧化層由於變薄而更加對靜電荷放電（electric static discharge;簡稱ESD)的行爲敏感，需要以ESD電路防護 電路來防止，甚至更上游的光罩都對ESD行爲敏感*舉 例來説，光罩係經由微影技術在不導電的玻璃材質如石英 覆以金屬鉻箔，再以電子朿在金屬鉻箔形成圈索所構成， 如圖一所示，圖中之複數個方塊的每一個對應於晶囷上之 一晶片（chip)之欲曝光（露出石英）或遮蔽（具金屬）的部 分，複數個方塊的周邊除欲曝成切割道8的金屬鉻揭外， 外圍之部分也是金屬鉻箔3。光軍由於操作之工程绅手的 2 本紙張尺度適用中國國家標準（〇JS)A4規格（210 X 297公《 ) (請先閲讀背面之注意事項再填寫本頁)^ 4106] 4 410 7 1 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () Field of the invention: The present invention discloses an antistatic design related to photomasks, especially when it is used to make photomasks. Adding a pattern similar to a lightning rod will lead away the static charges that may be generated in an arc discharge manner to avoid accumulation and damage the case on the photomask. Background of the invention: In the semiconductor manufacturing process, not only is it; the quality control of the I process needs to be closely monitored to prevent any incidents that damage the yield, and the design of the components is also reduced in size to increase the degree of unit area, and Improve component functions; more importantly, increase economic value of products. However, due to the rapid increase of the aggregation degree, the interconnects are denser, which makes the design rule, lithography process, and etching technology more difficult. In addition, not only is the gate oxide layer of the MOSFET thinner, it is more sensitive to the behavior of electric static discharge (ESD). It needs to be protected by ESD circuit protection circuits, and even the upstream photomask is sensitive to ESD behavior * For example, the photomask is formed by lithography technology on a non-conductive glass material such as quartz covered with a metal chromium foil, and then an electron is formed on the metal chromium foil to form a loop. As shown in FIG. Each of the squares corresponds to a portion of a chip on the crystal wafer that is to be exposed (exposed quartz) or shielded (with metal). The periphery of the plurality of squares is exposed except for the metal chromium that is to be exposed as the cutting line 8. The periphery The part is also a metal chrome foil 3. The paper size of the light army due to the operation of the engineering gentleman 2 This paper size is applicable to the Chinese national standard (〇JS) A4 specification (210 X 297) "(Please read the precautions on the back before filling this page)
H I n n I* n .H ^-3* · n ϋ n I 1 * I n n 1 n n in n I n 4— I n n »1 I K A7 B7 五、發明說明（ 碰觸或者由於和光罩固定架的碰觸咸者平時之堆放位置都 可能造成靜電的累積，當靜電累積至一定程度時，若沒有 適當的靜電引導路徑，便會經由光罩上之導線間放電，而 造成污杂的粒子，甚至更嚴重的是造成鉻圖案的架橋 (bridge)現象，以往，污染的粒子常發生在光罩的外圍之 金屬上或者光軍上複數個方塊之鄰接處，然而在深次微米 時代的今曰，其影響經常是圖案乏中。 請參考圖二A示線路（露出石英板鈞部份 > 的兩對邊因 靜電放電而產生一些污染顆粒9，雖然沒有造成架橋現象 或斷路，但對於利用此一光罩曝光之晶圓上的光阻囷案（如 囷二B所示）已有部分光阻圖案局部變窄如箭頭10所示， 經蝕刻程序後，架橋15或斷路即產生《換言之，光罩的 污染顆粒，在微影蝕刻之後，其影響已被放大了（這是囡 光罩圖案约爲半導體晶囷上圈案的四至五倍放大，因此光 罩上若有微小的異常也會造成影響的放大）。 圖三示一種目前業界所採用的方式，在光罩之鉻箔外 圈製作如護城河的環形圖案3〇，操作人員手可以碰觸外 圍40’因此可以防止操作人員手碰觸所產生之靜電累積 至靠近内部的元件。但一如熟悉該項技術者所知，靜電之 產生並不僅止於手的碰觸，乾燥之環境以及不經意的碰撞 或磨擦都可以造成靜電的產生。一但護城河包圍之範圍内 有累積之靜電荷若未及時疏導，它們仍會經由圏案之間最 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 表紙張尺度適用中國國家標準(CNS)A4規格(210 X 29TJJ- -I * 1- ^ ^ I ^ ^ ^OJ* ^ n »1 n n ^ I- t t n n n 1· n I I n f n >1 1 1 n .1 ^ ft— I n I 1 .HI nn I * n .H ^ -3 * · n ϋ n I 1 * I nn 1 nn in n I n 4— I nn »1 IK A7 B7 V. Description of the invention (touch or due to contact with the reticle holder The normal stacking position of those who touch the salt may cause the accumulation of static electricity. When the static electricity accumulates to a certain level, if there is no appropriate static electricity guide path, it will discharge through the wires on the photomask, causing dirt particles, or even more Seriously, the bridge phenomenon of chrome pattern is caused. In the past, contaminated particles often occurred on the periphery of the photomask or on the abutment of multiple squares on the light army. However, in the deep sub-micron era today, its The effect is often the lack of patterns. Please refer to the circuit shown in Figure 2A (exposing the two sides of the quartz plate > due to electrostatic discharge, some pollution particles 9 are generated. Although there is no bridging or disconnection, but for using this one The photoresist pattern on the wafer exposed by the photomask (as shown in Fig. 2B) has a part of the photoresist pattern that is partially narrowed as shown by arrow 10. After the etching process, the bridge 15 or disconnection will produce "in other words, light Hood of contaminating particles in lithography After etching, its impact has been magnified (this is a four to five times magnification of the mask pattern on the semiconductor wafer, so if there is a small abnormality on the mask, the impact will also be magnified.) Figure 3 shows A method currently used in the industry, a ring pattern 3 such as a moat is made on the outer circle of the chrome foil of the photomask, and the operator's hand can touch the outer periphery 40 ', so that the static electricity generated by the operator's hand can be prevented from accumulating near the inside. However, as is known to those skilled in the art, the generation of static electricity does not stop at the touch of hands. A dry environment and inadvertent collision or friction can cause static electricity. Once within the range surrounded by a moat, If the accumulated static charges are not cleared in a timely manner, they will still pass through the case (please read the precautions on the back before filling this page). The printed paper size of the employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese national standard (CNS ) A4 specification (210 X 29TJJ- -I * 1- ^ ^ I ^ ^ ^ OJ * ^ n »1 nn ^ I- ttnnn 1 · n II nfn > 1 1 1 n .1 ^ ft— I n I 1 .
..…:丨0 6 l- Λ 41 0 7 1 五、發明說明（ 脆弱的部分放電以釋放累積之電荷的。 因此，有鑑於上述的問題’本發明提供一成本低，卻 可以成功達到防止ESD之目的之設計。 發明目的及概述： 本發明目的係提供一防止靜電放電之光罩以提高微影 及蚀刻之良率。 衣發明係一種防止光罩之微影圖案受靜電放電微粒傷 害之光罩設計及其方法，首先係在光罩之鉻金屬接近邊緣 處形成一封環，封環内則有複數個微細避雷針，且每一該 微細避雷針的一端和封環之内徑或外徑的其中之一連接， 另一壤则和封環之對應的外徑或内徑保留一空隙，其中上 述之每~微細避雷針係指長度至少約10μηι，典型値爲 1 ΟΟμΓΤΊ ’宽度约1-3μίΤ) ’空隙寬約!至3μΓη ’此空隙係 用以將靜電放電。由於本發明之微細導線之圖萦係位於光 罩微影圖案之外圍’且每一微細避雷針係和光罩之遮蔽光 線的金屬同材質。因此，可以很容易的藉由製作光罩時同 時形成，因此成本也特别低，而防止静電放電的效果則極 佳。 1 *圖示簡單説明： 4 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公釐） 〈請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 r n I .^1 if - I u n n n I— *1 I n t I i n ΐ n { ί I tw —I I I - f n I n tr -. 441 〇6 1 A7 d Α\ Ο 7 1___B7___ 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 本發明的較佳實施例將於往後之説明文字中輔以下列 圖形以做更詳細的闡述： 圖一顯示傳统光罩的金屬鉻和光罩囷案間的關係。 圖二A至圖二C説明光罩圖案内的ESD對晶圓微影和蝕 刻的影響。 圖三説明一種傳統方法防止ESD之光罩設計。 圖四A至B顯示依據本發明技術之一封環設計的實施例， 圖四B係圃四A之局部放大。 ’ 圖五顯示依據本發明技術之一點電荷經由一微細避雷針放 電的實例。 發明詳細説明： 經濟部智慧財產局員工消費合作社印製 一如發明背景所述，靜電放電的問題已不只是發生於 晶片接腳的碰觸再傳至内部元件而已，它也會發生在更上 游之光罩上，特别是當積體電路元件微小化’聚集度高的 今曰，其影響性將更嚴重，因爲一片光箪’可能在曝前幾 批的晶圓時沒問題’卻在之後的曝晶圓時’產生連續幾批 晶圆的失敗，其影響所及，將造成良率的块速下降。然而 傳統方法尚未有較佳的解決.之道。 有鑑於上述之問題，本發明將提供一解決的方祛。 5 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公沒> .t .. rM. ..................... -· — . . ^ . , ·*. -..- " -----7Γ4Τΰ_6 1.^ Λ 1 Ο 7 t A7 鲁/Λ κβ·Α，更正/_見 " _Β7____ 五、發明說明（） 經濟部智慧財產局員工消费合作社印製 本發明之方法不若傳統方法採取防堵E S D由外至內導 入靜電荷累積，而係使靜電無法累積至傷害光罩內部圖案 的方式，不管是靜電由光罩內部所產生的，或者是由外部 碰觸的皆可適時導掉。請參考如圖四所示之示意圖。它係 包含複數條（通常是數百至數千條金屬鉻的微細避雷針 110所彤成的一個封環環100。 仍請參考如圖四，上述之微細避雪針11〇的形成係在 以電子朿寫入光罩圖案於鉻箔時，同時寫入數千支微細避 雷針的導線圖案。以一較佳的實施例而言，每一微細避雪 針110長度至少約.1·〇μηι，寬度約1-3μΓΠ，更佳的d況是 長約ΙΟΟμΓΠ»寬約1μηι，1.5μΓΠ或2μπι不等，且微細避 雷針110和封環的兩邊緣（此處所稱之邊緣係指光罩之內 徑或者外徑的其中之一邊保留一空隙112，空隙寬約1至 2μηι，這目的係使得微細避雷針1彳0可以經由空隙放電至 另一邊的金屬鉻箔上，微細避雪針之間的間隔約爲1 Ο-ΐ ΟΟΟΟμίη 。 .當封環100之內部有靜電累積時，靜電由金屬鉻箔傳 至微細避雷針1 1 〇經空隙Ή 2而向外放電。如圖五所示， 若外部的靜電..115導入光罩的外緣時，則靜電115會由 微細避雷針向靠內之空隙放電，即爲點m荷（箭頭所示處） 經由微細避雷針1 10放電的例子》因此，靜電不會累積， 此外由於封環離開光罩內部圖案有一段距離1因此「放電 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4琛格（210 X 297公釐） 44106 1 Λ 41 07 1 Α7 Β7.....: 丨 0 6 l- Λ 41 0 7 1 V. Description of the invention (Fragile partial discharge to release the accumulated charge. Therefore, in view of the above-mentioned problem, the present invention provides a low cost, but can successfully achieve prevention The design of the purpose of ESD. The purpose and summary of the invention: The purpose of the present invention is to provide a mask to prevent electrostatic discharge to improve the yield of lithography and etching. The invention of the invention is to prevent the lithographic pattern of the mask from being damaged by electrostatic discharge particles. The design of the photomask and its method firstly form a ring near the chrome metal of the photomask, and there are a plurality of fine lightning rods in the sealing ring, and one end of each of the fine lightning rods and the inner diameter or outer diameter of the sealing ring One of them is connected, and the other soil is left with a gap corresponding to the outer diameter or inner diameter of the seal ring. Each of the above ~ fine lightning rods refers to a length of at least about 10 μηι, typically 1100 μΓΤΊ 'Width is about 1-3 μίΤ ) 'The gap width is about! To 3μΓη' This gap is used to discharge static electricity. Because the drawing of the fine wire of the present invention is located at the periphery of the lithographic pattern of the mask, and each of the fine lightning rods and the light shielding metal are made of the same material. Therefore, it can be easily formed at the same time as the photomask, so the cost is particularly low, and the effect of preventing electrostatic discharge is excellent. 1 * A brief description of the diagram: 4 This paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) of the paper (please read the precautions on the back before filling out this page) Rn I. ^ 1 if-I unnn I— * 1 I nt I in ΐ n {ί I tw —III-fn I n tr-. 441 〇6 1 A7 d Α \ Ο 7 1___B7___ V. Description of the invention () (Please read the precautions on the back before filling this page) The preferred embodiment of the present invention will be supplemented by the following figures in the following explanatory text for more detailed explanation: Figure 1 shows the metal chromium and photomask of the traditional photomask Relationship between cases. Figures 2A to 2C illustrate the effects of ESD in a photomask pattern on wafer lithography and etching. Figure 3 illustrates a conventional mask design for preventing ESD. FIGS. 4A to 4B show an embodiment of a ring design according to the technology of the present invention, and FIG. 4B is a partial enlargement of a garden 4A. Figure 5 shows an example where a point charge is discharged via a fine lightning rod according to one of the techniques of the present invention. Detailed description of the invention: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As described in the background of the invention, the problem of electrostatic discharge is not only caused by the contact of the chip pins and then transmitted to the internal components. It also occurs more upstream. On the photomask, especially when the integrated circuit components are miniaturized, and the degree of aggregation is high, its influence will be more serious, because a light beam 'may be no problem when exposing the previous batches of wafers', but later When exposing wafers, the failure of several consecutive batches of wafers will be affected, and the yield rate will decrease. However, the traditional method has not yet been solved. In view of the above problems, the present invention will provide a solution. 5 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 public > .t .. rM. ..............- · —.. ^., · *. -..- " ----- 7Γ4Τΰ_6 1. ^ Λ 1 Ο 7 t A7 Lu / Λ κβ · Α, correction / _ See " _Β7 ____ V. Description of the invention ( The method of printing the present invention by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics does not adopt the traditional method of preventing ESD from introducing static charge accumulation from the outside to the inside, but it is a way to prevent static electricity from accumulating to damage the internal pattern of the photomask, regardless of static electricity. The light generated by the inside of the reticle or touched by the outside can be guided away in a timely manner. Please refer to the diagram shown in Figure 4. It is a micro lightning rod that contains multiple (usually hundreds to thousands of metal chromium). A sealing ring 100 formed by 110. Still referring to Figure 4, the formation of the above-mentioned fine snow avoidance needle 11 was written in thousands of fines at the same time when the mask pattern was written on the chrome foil with an electron beam. The wire pattern of the lightning rod. In a preferred embodiment, each fine snow rod 110 has a length of at least about 1.0 μm and a width of about 1-3 μΓ. The condition d is about 100μΓΠ »wide about 1μηι, 1.5μΓΠ or 2μπι, and the two edges of the micro lightning rod 110 and the sealing ring (the edge referred to here refers to one of the inner or outer diameter of the photomask. The gap 112 has a gap width of about 1 to 2 μηι. This purpose is to allow the fine lightning rods 1 彳 0 to discharge through the gap to the metal chrome foil on the other side. The interval between the fine snow rods is about 10- ΟΟΟΟμίη. When When static electricity accumulates inside the seal ring 100, the static electricity is transferred from the metal chrome foil to the fine lightning rod 1 110 through the gap Ή 2 and discharged outwards. As shown in Figure 5, if external static electricity .. 115 is introduced into the outer edge of the photomask At this time, the static electricity 115 will be discharged from the micro lightning rod to the inner space, which is an example of point m charge (shown by the arrow). The static electricity will not accumulate. Therefore, the static electricity will not accumulate. The internal pattern has a distance of 1 so "discharge (please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 Singh (210 X 297 mm) 44106 1 Λ 41 07 1 Α7 Β7
五、發明說明（ 時所炸開的微粒跨遠離內部圖案甚或熱熔於鉻箔上，因此 可有效防止光罩圖案受污染，以一較佳的實施例而言，微 細避雪針1 1 2的留空隙可以設計成一支對內徑，鄰近的 雨支則對外徑，此外微細避雪針也不限定要細長形，其胗 狀可以做多種的變化|例如中間較粗接近空隙處變細，或 一端粗另一端接近空隙處細尖等各式形狀皆可。當然比上 述實施例更細的微細避雷針更細更短也是可行的，只要每 —微細避雷針長寬比約爲10:1-1 000:1範圍內皆可3 以上所述僅爲本發明之較佳實施例而已，並非g以限 定本發明之申請專利範圍；凡其它未脫離本發明所_示之 精神下所完成之等效改變或修飾，均應包含在下述之申請 專利範圍內。 I.---_-------，裝----Γ---訂· (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局貝工消费合作社印製 ffl示標號說明 1 晶片 3 金屬銘箱 8 切割道 3 污染顆粒 10 部分光阻圖案局部變窄1 5 架橋 30 環形圖案 40 外圍 100封環 1 1 2空隙 1 1 0避雷針 1 1 5點電荷 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公^ )V. Description of the invention (When the particles exploded are far away from the internal pattern or even melted on the chrome foil, it can effectively prevent the mask pattern from being contaminated. In a preferred embodiment, the fine snow avoidance needle 1 1 2 The left gap can be designed as a pair of inner diameter, and the adjacent rain branch is opposite to the outer diameter. In addition, the fine snow pin is not limited to be slender, and its shape can be changed in a variety of ways | Or one end is thick, the other end is close to the gap, and other shapes are fine. Of course, the thinner lightning rods thinner and shorter than the above embodiment are also feasible, as long as the length-to-width ratio of each fine lightning rod is about 10: 1-1 000: 1 range is all 3 The above is only a preferred embodiment of the present invention, and is not to limit the scope of patent application of the present invention; all other equivalents can be accomplished without departing from the spirit of the present invention Changes or modifications should be included in the scope of the following patent applications. I .---_-------, equipment ---- Γ --- order · (Please read the precautions on the back before filling (This page) The ffl label printed by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs says 1 Wafer 3 Metal name box 8 Cutting path 3 Pollution particles 10 Partial photoresist pattern is partially narrowed 1 5 Bridge 30 Ring pattern 40 Peripheral 100 sealing ring 1 1 2 Gap 1 1 0 Lightning rod 1 1 5 points of charge This paper scale applies to China Standard (CNS) A4 Specification < 210 X 297 Male ^)