KR102606362B1 - 수광 모듈 및 수광 모듈의 제조 방법 - Google Patents

수광 모듈 및 수광 모듈의 제조 방법 Download PDF

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Publication number
KR102606362B1
KR102606362B1 KR1020187021679A KR20187021679A KR102606362B1 KR 102606362 B1 KR102606362 B1 KR 102606362B1 KR 1020187021679 A KR1020187021679 A KR 1020187021679A KR 20187021679 A KR20187021679 A KR 20187021679A KR 102606362 B1 KR102606362 B1 KR 102606362B1
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KR
South Korea
Prior art keywords
light
substrate
light receiving
main surface
face
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KR1020187021679A
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English (en)
Korean (ko)
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KR20180103931A (ko
Inventor
후미타카 니시오
마키오 구메
Original Assignee
하마마츠 포토닉스 가부시키가이샤
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Publication of KR20180103931A publication Critical patent/KR20180103931A/ko
Application granted granted Critical
Publication of KR102606362B1 publication Critical patent/KR102606362B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)
KR1020187021679A 2016-01-21 2016-11-21 수광 모듈 및 수광 모듈의 제조 방법 KR102606362B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016010078A JP6734654B2 (ja) 2016-01-21 2016-01-21 受光モジュール及び受光モジュールの製造方法
JPJP-P-2016-010078 2016-01-21
PCT/JP2016/084496 WO2017126214A1 (ja) 2016-01-21 2016-11-21 受光モジュール及び光学モジュールの製造方法

Publications (2)

Publication Number Publication Date
KR20180103931A KR20180103931A (ko) 2018-09-19
KR102606362B1 true KR102606362B1 (ko) 2023-11-27

Family

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Family Applications (1)

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KR1020187021679A KR102606362B1 (ko) 2016-01-21 2016-11-21 수광 모듈 및 수광 모듈의 제조 방법

Country Status (5)

Country Link
JP (1) JP6734654B2 (zh)
KR (1) KR102606362B1 (zh)
CN (1) CN108541344B (zh)
TW (1) TWI714677B (zh)
WO (1) WO2017126214A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019199037A1 (ko) 2018-04-10 2019-10-17 주식회사 엘지화학 장식 부재 및 이의 제조방법
JP7365124B2 (ja) * 2019-02-12 2023-10-19 ローム株式会社 近接センサおよびこれを用いた電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118865A (ja) * 1999-10-19 2001-04-27 Japan Rec Co Ltd 光電子部品の製造方法
JP2001308389A (ja) * 2000-04-24 2001-11-02 Rohm Co Ltd 側面発光半導体発光装置およびその製造方法
JP2014067781A (ja) * 2012-09-25 2014-04-17 Minebea Co Ltd 光源装置の製造方法
JP2014099468A (ja) * 2012-11-13 2014-05-29 Pioneer Electronic Corp 半導体デバイスの製造方法および半導体デバイス

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0243746A (ja) * 1988-08-04 1990-02-14 Fuji Electric Co Ltd 透明樹脂でモールドした光電変換素子の製造方法
JPH04196363A (ja) * 1990-11-28 1992-07-16 Oki Electric Ind Co Ltd 受発光装置
JP3115773B2 (ja) * 1994-10-04 2000-12-11 シャープ株式会社 プラグ・ジャック式光電共用伝送装置
JP3762545B2 (ja) 1998-06-08 2006-04-05 三洋電機株式会社 光半導体装置
JP2000031544A (ja) * 1998-07-13 2000-01-28 Rohm Co Ltd 半導体発光素子
US20020123163A1 (en) * 2000-04-24 2002-09-05 Takehiro Fujii Edge-emitting light-emitting semiconductor device and method of manufacture thereof
JP2003282954A (ja) * 2002-03-27 2003-10-03 Rohm Co Ltd Ｌｅｄ発光装置
JP2010177569A (ja) * 2009-01-30 2010-08-12 Panasonic Corp 光学デバイス及びその製造方法
EP2500942A1 (en) * 2009-11-11 2012-09-19 Panasonic Corporation Solid-state image pickup device and method for manufacturing same
US9735198B2 (en) * 2012-03-30 2017-08-15 Cree, Inc. Substrate based light emitter devices, components, and related methods
JP5837456B2 (ja) * 2012-05-28 2015-12-24 株式会社東芝 半導体発光装置及び発光モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118865A (ja) * 1999-10-19 2001-04-27 Japan Rec Co Ltd 光電子部品の製造方法
JP2001308389A (ja) * 2000-04-24 2001-11-02 Rohm Co Ltd 側面発光半導体発光装置およびその製造方法
JP2014067781A (ja) * 2012-09-25 2014-04-17 Minebea Co Ltd 光源装置の製造方法
JP2014099468A (ja) * 2012-11-13 2014-05-29 Pioneer Electronic Corp 半導体デバイスの製造方法および半導体デバイス

Also Published As

Publication number Publication date
CN108541344A (zh) 2018-09-14
JP2017130585A (ja) 2017-07-27
WO2017126214A1 (ja) 2017-07-27
JP6734654B2 (ja) 2020-08-05
CN108541344B (zh) 2022-04-05
TWI714677B (zh) 2021-01-01
TW201733149A (zh) 2017-09-16
KR20180103931A (ko) 2018-09-19

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