KR102570199B1 - 웨이퍼의 평가 방법 - Google Patents

웨이퍼의 평가 방법 Download PDF

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Publication number
KR102570199B1
KR102570199B1 KR1020180170693A KR20180170693A KR102570199B1 KR 102570199 B1 KR102570199 B1 KR 102570199B1 KR 1020180170693 A KR1020180170693 A KR 1020180170693A KR 20180170693 A KR20180170693 A KR 20180170693A KR 102570199 B1 KR102570199 B1 KR 102570199B1
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KR
South Korea
Prior art keywords
wafer
grinding
back surface
measuring needle
unit
Prior art date
Application number
KR1020180170693A
Other languages
English (en)
Korean (ko)
Other versions
KR20190085846A (ko
Inventor
슌이치로 히로사와
šœ이치로 히로사와
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20190085846A publication Critical patent/KR20190085846A/ko
Application granted granted Critical
Publication of KR102570199B1 publication Critical patent/KR102570199B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B17/00—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations
    • G01B17/08—Measuring arrangements characterised by the use of infrasonic, sonic or ultrasonic vibrations for measuring roughness or irregularity of surfaces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/28—Measuring arrangements characterised by the use of mechanical techniques for measuring roughness or irregularity of surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • A Measuring Device Byusing Mechanical Method (AREA)
KR1020180170693A 2018-01-11 2018-12-27 웨이퍼의 평가 방법 KR102570199B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018002894A JP7012538B2 (ja) 2018-01-11 2018-01-11 ウエーハの評価方法
JPJP-P-2018-002894 2018-01-11

Publications (2)

Publication Number Publication Date
KR20190085846A KR20190085846A (ko) 2019-07-19
KR102570199B1 true KR102570199B1 (ko) 2023-08-23

Family

ID=67235466

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180170693A KR102570199B1 (ko) 2018-01-11 2018-12-27 웨이퍼의 평가 방법

Country Status (4)

Country Link
JP (1) JP7012538B2 (zh)
KR (1) KR102570199B1 (zh)
CN (1) CN110030909B (zh)
TW (1) TWI789480B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112179299B (zh) * 2020-10-10 2022-10-21 孙树光 一种基于声发射的接触网平顺性检测装置及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158536A (ja) * 2007-12-25 2009-07-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2017505438A (ja) * 2014-01-24 2017-02-16 東京エレクトロン株式会社 前面パターニングの調整を決定する基板の背面のテクスチャマップを生成するシステム及び方法

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Publication number Priority date Publication date Assignee Title
IT1129055B (it) * 1980-01-08 1986-06-04 Fiat Ricerche Dispositivo palpatore per la misura della rugosita di una superficie
JP2000018935A (ja) 1998-07-03 2000-01-21 Tokyo Seimitsu Co Ltd 表面粗さ形状検出器
US6806951B2 (en) * 2000-09-20 2004-10-19 Kla-Tencor Technologies Corp. Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen
US6257953B1 (en) * 2000-09-25 2001-07-10 Center For Tribology, Inc. Method and apparatus for controlled polishing
DE102006032431B4 (de) * 2006-06-22 2011-12-01 Siltronic Ag Verfahren und Vorrichtung zur Detektion von mechanischen Defekten in einem aus Halbleitermaterial bestehenden Stabstück
JP2009246240A (ja) * 2008-03-31 2009-10-22 Tokyo Seimitsu Co Ltd 半導体ウェーハ裏面の研削方法及びそれに用いる半導体ウェーハ裏面研削装置
JP2011029331A (ja) * 2009-07-23 2011-02-10 Disco Abrasive Syst Ltd ウエーハの研削方法および保護テープ
US8603839B2 (en) * 2010-07-23 2013-12-10 First Solar, Inc. In-line metrology system
KR101215991B1 (ko) * 2010-12-15 2012-12-27 에이피시스템 주식회사 평탄도 검사 장치 및 이를 이용한 평탄도 검사 방법
JPWO2013145622A1 (ja) * 2012-03-28 2015-12-10 株式会社ニコン 基板貼り合わせ装置および基板貼り合わせ方法
CN102829740B (zh) * 2012-09-12 2015-08-19 昆山允可精密工业技术有限公司 接触式测量仪
CN205090955U (zh) * 2015-11-13 2016-03-16 中国人民解放军装甲兵工程学院 一种表面粗糙度检测装置
JP6591043B2 (ja) * 2016-03-14 2019-10-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
JP6637831B2 (ja) * 2016-04-28 2020-01-29 株式会社ディスコ デバイスの製造方法及び研削装置
CN205957887U (zh) * 2016-05-19 2017-02-15 云南三奇光电科技有限公司 一种用于测量单晶硅片平整度的装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009158536A (ja) * 2007-12-25 2009-07-16 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2017505438A (ja) * 2014-01-24 2017-02-16 東京エレクトロン株式会社 前面パターニングの調整を決定する基板の背面のテクスチャマップを生成するシステム及び方法

Also Published As

Publication number Publication date
TW201931484A (zh) 2019-08-01
JP7012538B2 (ja) 2022-01-28
TWI789480B (zh) 2023-01-11
JP2019124468A (ja) 2019-07-25
CN110030909B (zh) 2022-09-09
KR20190085846A (ko) 2019-07-19
CN110030909A (zh) 2019-07-19

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